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2016 International Conference on Planarization/CMP Technology（ICPT 2016）

作者： Jingbo Xu Guang Yang Peng He Xin-Ping Qu State key lab of ASIC and system Department of microelectronicsFudan University

Ru-Cu has a huge corrosion potential difference in CMP slurry which results in galvanic corrosion of *** work found that with the addition of guanidine sulfate（GS）, the corrosion current between Ru-Cu in KIO based slurry decreases significantly, while the corrosion potential difference between Ru-Cu measured from polarization curves changes little, indicating corrosion current measurement is more accurate.

关键词： CMP A Solution to Reduce the Galvanic Corrosion Current of Ru-Cu in KIO4 Based Slurry

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FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation 16

FinFET doping with PSG/BSG glass mimic doping by ultra low e...

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16th International Workshop on Junction Technology, IWJT 2016

作者： He, Chuan Chen, Lin Zhang, David Wei Hong, Junhua Jin, Guangyao Zhang, Jin Boeker, Jeff Liu, Renjie Jin, Hao Lv, Yimin Chen, Jiong Kingstone Semiconductor Joint Stock Co. Ltd. 200 Niudun Road Shanghai201203 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China

ISBN: (纸本)9781467399654

A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process. © 2016 IEEE.

关键词： FinFET

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Single-Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019)

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Small 2019年第22期15卷

作者： Xuefu Zhang Tianru Wu Qi Jiang Huishan Wang Hailong Zhu Zhiying Chen Ren Jiang Tianchao Niu Zhuojun Li Youwei Zhang Zhijun Qiu Guanghui Yu Ang Li Shan Qiao Haomin Wang Qingkai Yu Xiaoming Xie State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China Chinese Academy of Sciences Center for Excellence in Superconducting Electronics (CENSE) 865 Chang Ning Road Shanghai 200050 China University of Chinese Academy of Sciences Beijing 100049 China Department of Physics East China Normal University Shanghai 200241 China Herbert Gleiter Institute of Nanoscience College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China State Key Laboratory of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China School of Physical Science and Technology Shanghai Tech University Shanghai 200031 China

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A single-ended 10-bit 200 kS/s 607 μ W SAR ADC with an auto-zeroing offset cancellation technique

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Journal of Semiconductors 2015年第10期36卷 123-129页

作者：顾蔚如吴奕旻叶凡任俊彦 State Key Laboratory of ASIC & System Microelectronics Science and Technology Innovation Platform Fudan University

Thispaperpresentsasingle-ended8-channel 10-bit200kS/s 607 #W synchronous successiveapproxi- mation register （SAR） analog-to-digital converter （ADC） using HLMC 55 nm low leakage （LL） CMOS technology with a 3.3 V/1.2 V supply voltage. In conventional binary-encoded SAR ADCs the total capacitance grows expo- nentially with resolution. In this paper a CR hybrid DAC is adopted to reduce both capacitance and core area. The capacitor array resolves 4 bits and the other 6 bits are resolved by the resistor array. The 10-bit data is acquired by thermometer encoding to reduce the probability of DNL errors which are typically present in binary weighted architectures. This paper uses an auto-zeroing offset cancellation technique that can reduce the offset to 0.286 mV. The prototype chip realized the 10-bit SAR ADC fabricated in HLMC 55 nm CMOS technology with a core area of 167 × 87 μm2. It shows a sampling rate of 200 kS/s and low power dissipation of 607/μW operates at a 3.3 V analog supply voltage and a 1.2 V digital supply voltage. At the input frequency of 10 kHz the signal-to-noise-and- distortion ratio （SNDR） is 60.1 dB and the spurious-free dynamic range （SFDR） is 68.1 dB. The measured DNL is ±0.37/-0.06 LSB and INL is ±0.58/-0.22 LSB.

关键词： analog-to-digital converter CR hybrid DAC thermometer encoding auto-zero offset cancellation successive approximation register

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Influence of Post-annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-channel/Al2O3-dielectric

Influence of Post-annealing on Electrical Characteristics of...

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2016年上海市研究生学术论坛——电子科学与技术

作者： You-Hang Wang He-Mei Zheng Shi-Jin Ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan University Shanghai 200433 China

The TFTs with atomic layer deposited ZnO-channe1/Al2O3-dielectric were fabricated under the maximum process temperature of 200 ℃.We compared the influences of annealing temperature and time on the device *** electric...

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Design of a 1.12Gb/s 11.3mW low-voltage differential signaling transmitter

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Journal of Semiconductors 2015年第4期36卷 115-121页

作者：苏源向济璇沈骁樱叶凡任俊彦 State Key Laboratory of ASIC & System Microelectronics Science and Technology Innovation Platform Fudan University

This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18μm mixed signal complementary metal- oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage, adopting a low-voltage differential signaling （LVDS） technique. A multiplexer （MUX） and an LVDS driver are critical for a transmitter to complete a high-speed data transmission. This paper proposes a high power-efficiency single-stage 14 ： 1 MUX and an adjustable LVDS driver circuit, capable of driving different loads with a slight increase in power consumption. The prototype chip implements a transmitter with a core area of 970 × 560μm2, demonstrating low power consumption and adjustable driving capability.

关键词： transmitter LVDS tree-type MUX single-stage MUX adjustable driver high power efficiency

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Negative capacitance 2D MoS2 transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

Negative capacitance 2D MoS2 transistors with sub-60mV/dec s...

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International Electron Devices Meeting (IEDM)

作者： Zhihao Yu Hanchen Wang Weisheng Li Sheng Xu Xiongfei Song Shuxian Wang Peng Wang Peng Zhou Yi Shi Yang Chai Xinran Wang National Laboratory of Solid State Microstructures Nanjing University Nanjing China College of Engineering and Applied Sciences Nanjing University Nanjing China ASIC & System State Key Lab Fudan University Shanghai China Department of Applied Physics The Hong Kong Polytechnic University Hong Kong China

ISBN: (纸本)9781538635605;9781538635599

To realize steep-slope MoS2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrOx (HZO)/AlOx as dielectric layer. The MoS2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of Id, nearly hysteresis-free up to V ds = 1V, small |V th | on/I off ratio >10 9 , and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of Id using a gate drive of 232 mV, clearly demonstrating the potential of MoS2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS 2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in Id (250 μA/μm) and 4 times improvement in transconductance.

关键词： Molybdenum Sulfur Logic gates Field effect transistors Hysteresis Performance evaluation Silicon

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Estimating mean trabecular bone spacing based on the combination of Hilbert transform and fundamental frequency estimation

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Science Foundation in China 2017年第3期25卷 57-71页

作者：李颖徐峰刘成成许凯亮他得安王威琪 Department of Electronic Engineering Fudan UniversityShanghai 200433China Institute of Acoustics Tongji UniversityShanghai 200092China Sorbonne Université UPMC Univ Paris 06INSERM UMR-S 1146CNRS UMR 7371Laboratoired'ImagerieBiomédicaleF-75006ParisFrance State Key Laboratory of ASIC and System Fudan UniversityShanghai 200433China Key Laboratory of Medical Imaging Computing and Computer Assisted Intervention(MICCAI)of Shanghai Shanghai 200032China

Ultrasonic backscatter signals from cancellous bone are sensitive to the microstructure of trabecular bone,and thus enable the feasibility to extract microstructural information of trabecular *** mean trabecular bone spacing(MTBS)is an important parameter for characterizing bone *** paper proposes an MTBS estimation method based on the combination of Hilbert transform and fundamental frequency estimation(CHF). The CHF was verified with ultrasonic backscatter signals from simulations and in vitro measurements at a central frequency of *** CHF method was compared with the simplified inverse filter tracking(SIFT)method,Simons' Quadratic Transformation(QT)method,Singular Spectrum Analysis(SSA)method,and Spectral Autocorrelation(SAC)***-Carlo simulations were performed by varying the MTBS,signal-to-noise ratio(SNR),standard deviation of regular spacing(SDRS),amplitude ratio of diffuse scattering to regular scattering(Ad)and frequency dependent attenuation(nBUA).The simulation results showed that the CHF method had a better performance in MTBS estimation under almost all the examination conditions except for *** estimation percentage correct(EPC)was greater than 90% when the MTBS was in the range of 0.4to *** the in vitro measurements,the estimated EPC by the CHF method was91.25±7.81%(mean±standard deviation).A significant correlation was observed for the CHF-estimated MTBS and micro-computed tomography(μ-CT)-measured values(R^2=0.75,p<0.01).These results demonstrate that the CHF method is anti-interference for MTBS estimation and can be used to estimate trabecular bone spacing.

关键词： Ultrasonic backscatter Mean trabecular bone spacing estimation Hilbert transform and fundamental frequency estimation Cancellous bone microstructure

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Fast compressive sensing reconstruction algorithm on FPGA using Orthogonal Matching Pursuit

Fast compressive sensing reconstruction algorithm on FPGA us...

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International Symposium on Circuits and systems

作者： Zhelun Yu Jincheng Su Fan Yang Yangfeng Su Xuan Zeng Dian Zhou Weiping Shi State Key Laboratory of ASIC & Systems Department of Microelectronics School of Mathematical Sciences Fudan University China

ISBN: (纸本)9781479953424

This paper presents a fast compressive sensing reconstruction algorithm implemented on FPGA using Orthogonal Matching Pursuit (OMP). The algorithm is optimized with QR decomposition to solve the least square problem and avoids the square root operations to facilitate the hardware implementation. The implementation results show that this design can run at a frequency of 100MHz and the proposed algorithm achieves 50% lower complexity than the other existed algorithms.

关键词： hardware reconstruction compressive sensing OMP FPGA

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Ion implant technology for state-of-the-art high efficiency solar cell applications 16

Ion implant technology for state-of-the-art high efficiency ...

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16th International Workshop on Junction Technology, IWJT 2016

作者： Jin, Guangyao Sun, Yaojie Wang, Yizhe Zhang, David Wei Chen, Lin He, Chuan Boeker, Jeff Hong, Junhua Chen, Shoujun Liu, Renjie Lv, Yimin Chen, Jiong Kingstone Semiconductor Joint Stock Co. Ltd. 200 Niudun Road Shanghai201203 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai200433 China School of Information Science and Engineering Fudan University Shanghai200433 China

ISBN: (纸本)9781467399654

For many years, Photovoltaic (PV) solar technology was believed not possible to be cost effective and not even close to the cost for electricity production compared to fossil fuels. Surprisingly, the fact is that low cost but powerful and long-lasting solar modules can now be mass produced at the scale of over 60GW per year which makes the LCOE (levelizedcost of electricity) of latest PV systemcost competitive with any other technologies. Similarly, for ion implant technology in solar applications, which were thought to be too slow and expensive, have been successfully been utilized in current solar cell mass production as well as producing of state-of-the-art high efficiency solar cells. The development of ion implant processes for solar cells and the latest high efficiency solar cell results will be presented in this paper. © 2016 IEEE.

关键词： Fossil fuels

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