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Feature-Scale Simulations of Particulate Slurry Flows in Chemical Mechanical Polishing by Smoothed Particle Hydrodynamics

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Communications in Computational Physics 2014年第10期16卷 1389-1418页

作者： Dong Wang Sihong Shao Changhao Yan Wei Cai Xuan Zeng State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 201203China. LMAM and School of Mathematical Sciences Peking UniversityBeijing 100871China. Department of Mathematics and Statistics University of North Carolina at CharlotteCharlotteNC 28223USA.

In this paper,the mechanisms of material removal in chemical mechanical polishing(CMP)processes are investigated in detail by the smoothed particle hydrodynamics(SPH)*** feature-scale behaviours of slurry flow,rough pad,wafer defects,moving solid boundaries,slurry-abrasive interactions,and abrasive collisions are modelled and *** with previous work on CMP simulations,our simulations incorporate more realistic physical aspects of the CMP process,especially the effect of abrasive concentration in the slurry *** preliminary results on slurry flow in CMP provide microscopic insights on the experimental data of the relation between the removal rate and abrasive concentration and demonstrate that SPH is a suitable method for the research of CMP processes.

关键词： Chemical mechanical polishing smoothed particle hydrodynamics particulate flow rough pad wafer defects abrasive concentration.

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The effective mobility enhancement of uniform Al2O3 on MoS2

The effective mobility enhancement of uniform Al2O3 on MoS2

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中国真空学会2014学术年会

作者： Peng Zhou Lin Chen Qing-Qing Sun Peng-Fei Wang Shi-Jin Ding David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan University

In this work,we first systematically investigated the growth of AlO on M0S2 basal plane by atomic layer *** from the previous reports,we found that AlO growth are in forms of island-like clusters on basal plane of as-exfoliated M0S2 flakes,and within our measurement range,neither the growth temperature nor the pulse time has an obvious impact on *** order to achieve uniform growth of AlO,we applied

关键词： The effective mobility enhancement of uniform Al2O3 on MoS2

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A low kickback noise and offset calibrated dynamic comparator for 2B/C SAR ADC

A low kickback noise and offset calibrated dynamic comparato...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Jian Mei Xiaoying Shen Hao Zhou Fan Ye Junyan Ren Department of Microelectronics Fudan University Shanghai China State Key Laboratory of ASIC & System

ISBN: (纸本)9781479932849

A low kickback noise and offset calibrated dynamic comparator used in a high speed capacitive 2-bit-per-cycle (2b/C) SAR ADC was presented. This paper discusses the sources of kickback noise and offset voltage of the dynamic comparator. And then the proposed comparator decreases the kickback noise to the range without affecting the performance of comparator. The next, a calibration unit is shown to decrease the offset voltage to σ± 0.5 mV with the range σ± 16 mV to meet the demand of the 8-b 2b/C SAR ADC. The proposed comparator is composed and simulated in 65 nm technology. The proposed comparator has 0.01 mV kickback noise at 7.9 mV differential input voltage and the calibration unit could calibrate the offset to -0.4±0.5 mV at 66 times Monte-Carlo simulations.

关键词： Abstracts Noise Arrays

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Characteristics of low frequency noise in n+Si-HfO2-Ni resistive random access memory 12

Characteristics of low frequency noise in n+Si-HfO2-Ni resis...

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2014 12th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2014

作者： Zhao, Yadong Huang, Daming Lu, Dongyi Anh, Tran Xuan Yu, Hongyu Li, Ming-Fu State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai201203 China School of Electrical and Electronic Engineering Nanyang Technological University Singapore South University of Science and Technology of China Shen Zhen China

ISBN: (纸本)9781479932962

The low frequency noises from n+Si-HfO2-Ni resistive random access memory (RRAM) are measured. The normalized power spectra (SI/I2) in initial state (IS), in high resistance state (HRS), and in low resistance state (LRS) with bias V below a threshold voltage Vth all show 1/f characteristics, have similar magnitudes, and are nearly bias independent. In contrast, in LRS with bias beyond the threshold voltage, the magnitude of the spectra reduces dramatically with bias especially at very low frequency, while the lineshape changes from 1/f to nearly f independent. A simple model which contains trap-assisted (TA) and filament (CF) conductions is proposed to interpret the noise spectra. In IS, HRS, and LRS with V th, the noise is mainly induced in the TA area with a wide distribution of trap/detrap time. While in LRS with V > Vth, the noise is mainly induced in the CF with the domination of a smaller trap/detrap time. © 2014 IEEE.

关键词： Threshold voltage

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Investigation of spin-on-dopant for fabricating high on-current tunneling field effect transistor

Investigation of spin-on-dopant for fabricating high on-curr...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Wei-Chao Zhou Xi Lin Xiao-Yong Liu Xiang-Ming Xu Chun-Min Zhang Jin-Shan Shi Peng-Fei Wang David Wei Zhang School of Microelectronics State Key Laboratory of ASIC and System Fudan University China

ISBN: (纸本)9781479932849

Spin-on-dopant and rapid thermal diffusion are used as the doping method for fabricating planar tunneling field effect transistor (TFET) in this paper to acquire abrupt doping profile and high surface doping concentration. Due to the heavy surface doping the on-current of TFET is enhanced. The ambipolar characteristics of TFET are also inhibited by reducing the drain doping concentration.

关键词： Silicon Doping Phosphors Boron MOS devices Films Surface treatment

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Investigation of Ni(Pt)/Si-cap/SiGe solid phase reaction

Investigation of Ni(Pt)/Si-cap/SiGe solid phase reaction

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International Workshop on Junction Technology

作者： Jian-Chi Zhang Yu-Long Jiang Bing-Zong Li State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

Ni(Pt)/Si-cap/SiGe solid phase reaction with various Si cap layer thickness and Ge content has been investigated in this paper. The results suggest that the Si-cap layer needs to be carefully optimized to achieve the lowest sheet resistance (Rs). The thermal stability study shows that Ge atoms out-diffusion results in the strain relaxation and the decrease of Ge content of SiGe layer even after a low temperature post annealing, although the Rs apparently remain constant. After a higher temperature post annealing, the film agglomeration and Ge segregation cause a significant increase in Rs and decrease of compressive strain in SiGe layer.

关键词： Silicon germanium Annealing Silicon Thermal stability Strain Epitaxial growth

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Analysis of the subthreshold characteristics of vertical tunneling field effect transistors

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Journal of Semiconductors 2013年第1期34卷 28-34页

作者：韩忠方茹国平阮刚 State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device *** types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping *** diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor *** VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two *** our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and *** results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.

关键词： tunneling field effect transistor metal-oxide-semiconductor field effect transistor subthreshold swing

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Low voltage program-erasable Pd-Al_2O_3-Si capacitors with Ru nanocrystals for nonvolatile memory application

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Chinese Physics B 2013年第11期22卷 532-535页

作者：蓝澜苟鸿雁丁士进张卫 State Key Laboratory of ASIC and System School of Microelectronics Fudan University

Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.

关键词： metal-oxide-semiconductor capacitors nonvolatile memory Ru nanocrystals atomic-layer-deposition

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Coupled mode analysis of angular grating-based optical vortex beam emitters

Coupled mode analysis of angular grating-based optical vorte...

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Asia Communications and Photonics Conference, ACPC 2014

作者： Zhang, Ning Zhu, Jiangbo Cai, Xinlun Yu, Siyuan Departemnt of Electrical and Electronic Engineering University of Bristol United Kingdom State Key Laboratory of Optoelectronic Materials and Technology School of Physical Science and Engineering Technologies Sun Yat-Sen University China State Key Laboratory of ASIC and System Department of Communication Science and Engineering Fudan University China

We develop a model for angular grating-based optical vortex emitters based on the cylindrical coupled-mode theory. The guided and radiated modes are calculated, and the impact of grating size on the radiation power is... 详细信息

ISBN: (纸本)9781557528520

关键词： Vortex flow

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Co-implantation with microwave annealing for phosphorous shallow-junction formation in Germanium

Co-implantation with microwave annealing for phosphorous sha...

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International Conference on Ion Implantation Technology (IIT)

作者： J.B. Liu J. Luo J.F. Li C. Chen G.L. Wang T. Chen T.T. Li J. Zhong D.P. Wu P. Xu C. Zhao Key Laboratory of Microelectronics Devices and Integrated Technology Chinese Academy of Sciences Beijing China State Key Laboratory of ASIC and System Fudan University Shanghai China

The formation of N-type Ge shallow junction is investigated in this work. By combining carbon co-implantation and microwave annealing (MWA) method, the junction depth of 34 nm measured by secondary ion mass spectroscopy (SIMS) as well as sheet resistance of 467 ohm/sq measured by Hall is achieved. Results show that the opitimal carbon implantation energy is 8 keV in that distributed carbon ions at such an energy can effectively trap vacancies and phosphorous into immobile clusters. The recrystallization of amorphous layer after MWA annealing is also studied by both ellipsometry and transmission electron microscopy (TEM).

关键词： Carbon Junctions Germanium Rapid thermal annealing microelectronics Electrical resistance measurement

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