A major obstacle facing the development of metal-oxide-semiconductor field transistors with GaAs channels is the poor interface between gate dielectric and Ⅲ-Ⅴ *** this work,chemical composition and the interfacial ...
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A major obstacle facing the development of metal-oxide-semiconductor field transistors with GaAs channels is the poor interface between gate dielectric and Ⅲ-Ⅴ *** this work,chemical composition and the interfacial properties of TiAlO thin films grown by atomic layer deposition on S-passivated GaAs were studied in *** free of interfacial layer for the S-passivated TiAlO/GaAs sample was revealed by transmission electron microscopy and xray photoelectron *** electrical properties such as the C-V and I-V characteristics were also *** is shown that the sulfur treatment can significantly improve the interface properties through suppressing the formation of interfacial layers.
This paper presents a novel detection algorithm for soft-output, multiple-input multiple-output (MIMO) systems. The algorithm obtains a list of candidates used to calculate likelihood information in parallel and it in...
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[email protected] 2 core-shell nanotube arrays are fabricated combining the anodization and atomic layer deposition techniques. In this process, thin ZnO layers are coated onto the inner wall surface of the TiO 2...
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[email protected] 2 core-shell nanotube arrays are fabricated combining the anodization and atomic layer deposition techniques. In this process, thin ZnO layers are coated onto the inner wall surface of the TiO 2 nanotubes. The novel three-dimensional material is directly used as anode for lithium ion batteries and exhibits excellent specific capacity, cycling performance, and rate capability. The enhanced electrochemical performance can be ascribed to the combination of high specific capacity of ZnO and the structural stability of TiO 2 nanotube arrays. On one hand, the ZnO layer increases the areal capacity of TiO 2 nanotube arrays from 74 to 170μAh cm -2 after 200 cycles. On the other hand, the special nanotubular structure not only buffers the volume change of ZnO during cycling and but also facilitates rapid ion diffusion.
HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N（C2H5）（CH3）]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia *** composition,the interfac...
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HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N（C2H5）（CH3）]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia *** composition,the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal *** a nitrogen concentration increase from 1.41 to 7.45%,the bandgap of the films decreased from 5.82 to 4.94 eV.
The tuneling electrical resitance (TER) effect based on ferroelectric ultrathin films has been studied for several years. The key points on the TER effect is the films processing the ferroelectricity when the thicknes...
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The tuneling electrical resitance (TER) effect based on ferroelectric ultrathin films has been studied for several years. The key points on the TER effect is the films processing the ferroelectricity when the thickness less than several nanometers. The ultrathin ferroelectric films have been found recent years, for example PbZr x Ti 1-x O 3 , BaTiO 3 . Recently, the ferroelectricity of PVDF-based polymer films fabricated by LB method is confirmed by the piezoelectric force microscopy and pyroelectric measurement. The tuneling electrical resistance effect have been found in the P(VDFrFE) polymer films. The TER effect obtained from the IVs, defined by TER=(I p -In)/I n % , is about 400 at room temperature. The on/off ratio is up to 10 2 to 10 3 .
In this paper, based on the prototype of a commercial OM2 multimode fiber product, tap delay lines filter model and mode spatial coupling theory, we establish a complete analytical model for coherent optical multiple-...
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ISBN:
(纸本)9784885522710
In this paper, based on the prototype of a commercial OM2 multimode fiber product, tap delay lines filter model and mode spatial coupling theory, we establish a complete analytical model for coherent optical multiple-input-multiple-output (MIMO) systems over multimode fiber (MMF) with ring launching and receiving. With this model, we transmitted 10Gb/s QPSK signal with frequency pre-distortion over 2500m MMF and achieved error vector magnitude (EVM) less than 0.07 when OSNR is 24dB.
Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method an...
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In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed...
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In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.
We report Pt deposition on a Si substrate by means of atomic layer deposition（ALD） using（methylcyclopentadienyl） trimethylplatinum（CH_3C_5H_4Pt（CH_3）_3） and O_*** substrates with both HF-last and oxidelast sur...
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We report Pt deposition on a Si substrate by means of atomic layer deposition（ALD） using（methylcyclopentadienyl） trimethylplatinum（CH_3C_5H_4Pt（CH_3）_3） and O_*** substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last *** interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.
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