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2012 International Symposium on Photonics and Optoelectronics, SOPO 2012

作者： Liu, Xin-Yan Lin, Xi Cao, Cheng-Wei Sun, Qing-Qing Lin, Paul-Chang Bian, Yi-Jun Xing, Cheng Wang, Peng-Fei Zhang, David Wei State Key Laboratory of ASIC and System Dept. of Microelectronics Fudan University Shanghai China Shanghai China

ISBN: (纸本)9781457709111

A single-transistor active pixel image sensor compatible with dual-poly-gate technology is investigated in this paper. The integration compatibility is studied by integrating this device using EEPROM fabrication processes. The operation mechanism, light sensing performance, and non-destructive reading of this image sensor will be discussed. © 2012 IEEE.

关键词： Image sensors

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Efficient implementation of OFDM inner receiver on a programmable multi-core processor platform

Efficient implementation of OFDM inner receiver on a program...

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作者： Fan, Wenhua Chen, Chen Chen, Yun Yu, Zhiyi Zeng, Xiaoyang State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 201203 China

This paper presents an efficient implementation of OFDM inner receiver on a programmable multi-core processor platform with CMMB as an application. The platform consists of an array of programmable SIMD processors interconnected in a 2-D mesh network, which can provide high performance and is quite suitable for wireless communication applications. Implemented on one cluster with 8 cores, the receiver includes symbol timing, carrier frequency offset and sampling frequency offset synchronization, channel estimation and equalization. Multiple optimization techniques are explored to improve system throughput such as: task-level parallelism on many cores, data-level parallelism on SIMD cores, minimization of memory access and route-length-minimization task mapping techniques. Besides, efficient memory strategy and specific instructions for complex computation increase the performance. The simulation results show that the inner receiver could achieve a throughput of up to 120 Mbps when operating at 750 MHz. © 2012 The Institute of Electronics, Information and Communication Engineers.

关键词： Orthogonal frequency division multiplexing

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Generation of coherent optical multi-carriers using concatenated,dual-drive Mach-Zehnder and phase modulators

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Chinese Optics Letters 2012年第7期10卷 19-23页

作者：邹书敏王一光邵宇丰张俊文余建军迟楠 State Key Laboratory of ASIC and System Department of Communication Science and EngineeringFudan University

The generation of coherent optical subcarriers based on a concatenated dual-drive Mach-Zehnder intensity modulator （IM） and two phase modulators （PMs） is proposed and experimentally demonstrated. The modulation index and DC bias of PM＋IM modulation are theoretically investigated. Theoretical analysis and numerical study are also carried out to examine the proposed scheme. We use 25-GHz RF synchronous sinusoidal signals to drive cascaded two-stage PMs and IM, through which we generate 28 subcaxriers with peak power fluctuations less than 4 dB. The measured tone-to-noise ratio of the subcarrier is higher than 40 dB. The experimental results show that for 100-Gb/s polarization multiplexing QPSK signal, the receiver sensitivity of the back-to-back signal is -28.6 dBm, and the power penalty is lower than 1 dB after 100-km transmission at the BER of 1 × 10-9.

关键词： Phase modulation Quadrature phase shift keying

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Despeckling medical ultrasound image based on spatially adaptive maximum-likelihood estimation

Despeckling medical ultrasound image based on spatially adap...

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2012 3rd IEEE/IET International Conference on Audio, Language and Image Processing, ICALIP 2012

作者： Yu, Jinhua Hou, Tao Guo, Yi Wang, Yuanyuan State Key Laboratory of ASIC and System Department of Electronic Engineering Fudan University Shanghai 200433 China

ISBN: (纸本)9781467301718

In view of the inherent speckle noise in medical ultrasound image, a novel method based on spatially adaptive maximum-likelihood (ML) technique is proposed. A binary edge mask is firstly estimated to indicate the possible edges in the speckled image. An ML estimation approach is then utilized, whose shape parameter and window size are adaptively controlled by the edge mask. Finally, the noise-free tissue echogenicity map is obtained. The quantitative assessment from both simulation and in vivo experiment indicate that the proposed method strikes an optimal balance between noise suppression and edge preservation. © 2012 IEEE.

关键词： Maximum likelihood estimation

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Tuneling electrical resitance effect based on the ultrathin ferroelectric polymer films

Tuneling electrical resitance effect based on the ultrathin ...

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International Conference on Nanoscience & Technology,China 2013(ChinaNANO 2013)(中国国际纳米科学和技术大会)

作者： Jianlu Wang Xiangjian Meng Chungang Duan Anquan Jiang Jinglan Sun Juhhao Chu Shanghai Institute of technical physics Chinese Academy of Science500 Yutian RoadShanghai200083China Key Laboratory of Polar Materials and DevicesEast China Normal University500 Dongchuang RoadShanghai200241China ASIC & System State Key LaboratoryDepartment of MicroelectronicsFudan UniversityShanghai200433China Shanghai Institute of technical physicsChinese Academy of Science500 Yutian RoadShanghai200083China Key Laboratory of Polar Materials and Devices East China Normal University500 Dongchuang RoadShanghai200241China

The tuneling electrical resitance (TER) effect based on ferroelectric ultrathin films has been studied for several *** key points on the TER effect is the films processing the ferroelectricity when the thickness less ... 详细信息

关键词： Tunneling electrical resistance P(VDF-TrFE) Langmuir-Blodgett

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Interleaved subcarrier allocation for DFT-spread OFDM to reduce PAPR

Interleaved subcarrier allocation for DFT-spread OFDM to red...

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2012 17th Opto-Electronics and Communications Conference, OECC 2012

作者： Fang, Yuan Tao, Li Chi, Nan Department of Communication Science and Engineering State Key Laboratory of ASIC and System Fudan University Shanghai 200433 China

ISBN: (纸本)9781467309776

Discrete-Fourier-transform spread orthogonal frequency-division multiplexing (DFT-S-OFDM) draws increasing attention by its prominent advantage in low peak-to-average power ratio (PAPR). DFT-S-OFDM originate from the single carrier frequency division multiple access (SC-FDMA) which is the uplink multiple access scheme for 3GPP LTE. Although DFT-S-OFDM has been introduced to optical communication, detailed discussion on this scheme is still necessary. In this paper, we study the PAPR performance of DFT-S-OFDM in optical transmission system and compare the performance of different subcarrier allocation method. Meanwhile, we propose to utilize interleaved subcarrier allocation and demonstrate that obvious improvement in input power range and BER at high input power will be achieved. © 2012 IEEE.

关键词： Orthogonal frequency division multiplexing

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Power control of femtocell networks based on Stackelberg game

Power control of femtocell networks based on Stackelberg gam...

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2012 1st IEEE International Conference on Communications in China, ICCC 2012

作者： Li, Peng Zhu, Yu State Key Laboratory of ASIC and System Department of Communication Science and Engineering Fudan University Shanghai 200433 China

ISBN: (纸本)9781467328159

As an encouraging solution to provide intelligent indoor wireless coverage and enhanced network capacity, femtocell has drawn considerable attention from both academia and industry. However, the random deployments of these autonomous devices has complicated the current network topology and thus will lead to intensified interference to the in-use macrocell networks. In this paper, we propose a Stackelberg game (SG)-based power control scheme to impose regulation on these noncooperative femtocells. Specifically, a network power controller (NPC) is assumed as the leader of the SG and the femtocells it connects to play as the followers. By pricing for the femtocells power consumption, the NPC tries to minimize the transmit power of the femtocell network under both the quality of service (QoS) constrains at femtocell terminals and the sum interference constrain at the macrocell terminals. We prove that an unique Stackelberg equilibrium (SE) exists in this game and a distributed algorithm that converges to the SE is further proposed. Numerical results show that besides the fast convergence property, our algorithm greatly reduces the transmit power of femtocells and therefore, improves the power efficiency of the femtocell network as much as 10 times, compared with that of the pure non-cooperative game scheme. © 2012 IEEE.

关键词： Femtocell

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A Reliability Model for CMOS Circuit Based on Device Degradation

A Reliability Model for CMOS Circuit Based on Device Degrada...

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： J.Peng D.M.Huang G.F.Jiao M.F.Li State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

CMOS device degradations such as negative bias temperature instability (NBTI) and hot carrier injection (HCI) have been extensively investigated. However, the relationship between the device degradation and the circuit reliability is not well established. In this paper, we propose a model for the frequency degradation of the ring oscillator (RO) after static stress based on the device degradations of NBTI. The model is demonstrated by using the SMIC 65nm technology. We found that the frequency degradation is much significant for the RO consisting of short (60 nm) channel devices as compared to that of long (130 nm) channel devices. The difference is essentially due to the HCI which dominates the degradation of the RO consisting of short channel devices. Combine the proposed model and the frequency degradation of the RO under dynamic stress, the contribution of NBTI and HCI is distinguished.

关键词： A Reliability Model for CMOS Circuit Based on Device Degradation Model

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Morphological and optical properties of silicon nanoholes produced by Pt-nanoparticles assisted chemical etching

Morphological and optical properties of silicon nanoholes pr...

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： Bao Zhu Lian-Jie Li Shi-Jin Ding Wei Zhang State Key Laboratory of ASIC and system Department of MicroelectronicsFudan University

ISBN: (纸本)9781467324748

Silicon nanoholes have been fabricated in heavily doped P-type single-crystalline silicon via Pt-nanoparticles assisted chemical *** morphologies of silicon nanoholes are modulated by varying etching time and HF concentration,respectively. Vertical aligned cylindrical nanoholes are observed in all fabricated *** the etching time increase,the diameter of silicon nanoholes stays the same and the depth and roughness increase,*** reflection spectrum indicates that these silicon nanoholes have great antireflection property and reflectivity as low as 2.5% is *** the HF concentration is raised, the depth of silicon nanoholes has a maximum and the diameter and roughness *** reflection spectrum shows apparent interference fringes when the HF concentration is very high.

关键词： Morphological and optical properties of silicon nanoholes produced by Pt-nanoparticles assisted chemical etching

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A Novel Recessed-channel Tunneling FET Design with Boosted Drive Current and Suppressed Leakage Current

A Novel Recessed-channel Tunneling FET Design with Boosted D...

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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： Wei Wang Song-Gan Zang Xi Lin Xiao-Yong Liu Qing-Qing Sun Peng-Fei Wang David Wei Zhang State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

In this paper,we propose a recessed-channel （U-shape-channel）tunneling field-effect-transistor （TFET）for 16-nm technology *** new device structure has the advantages of boosted Ion and suppressed Ioff compared to the planar bulk-Si TFETs. Using Sentaurus TCAD simulations,it is found that the recessed channel will enlarge the tunneling area which will greatly enhance the drive ***,a steeper subthreshold swing（SS）will be realized in the U-shape TFET.

关键词： Tunneling Logic gates Doping Leakage current Silicon FETs Integrated circuit modeling

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