咨询与建议

限定检索结果

文献类型

  • 633 篇 会议
  • 364 篇 期刊文献

馆藏范围

  • 997 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 701 篇 工学
    • 382 篇 电子科学与技术(可...
    • 232 篇 材料科学与工程(可...
    • 147 篇 计算机科学与技术...
    • 144 篇 电气工程
    • 114 篇 化学工程与技术
    • 74 篇 软件工程
    • 51 篇 光学工程
    • 51 篇 信息与通信工程
    • 50 篇 机械工程
    • 48 篇 控制科学与工程
    • 47 篇 仪器科学与技术
    • 44 篇 冶金工程
    • 39 篇 动力工程及工程热...
    • 21 篇 生物医学工程(可授...
    • 20 篇 力学(可授工学、理...
    • 20 篇 生物工程
    • 10 篇 土木工程
    • 8 篇 建筑学
  • 327 篇 理学
    • 210 篇 物理学
    • 118 篇 化学
    • 79 篇 数学
    • 24 篇 生物学
    • 18 篇 统计学(可授理学、...
    • 17 篇 系统科学
  • 45 篇 管理学
    • 40 篇 管理科学与工程(可...
    • 12 篇 工商管理
  • 17 篇 医学
    • 13 篇 临床医学
    • 12 篇 基础医学(可授医学...
  • 9 篇 经济学
    • 9 篇 应用经济学
  • 5 篇 法学
  • 2 篇 军事学
  • 1 篇 艺术学

主题

  • 33 篇 application spec...
  • 29 篇 microelectronics
  • 29 篇 silicon
  • 24 篇 films
  • 20 篇 field programmab...
  • 19 篇 annealing
  • 18 篇 electrodes
  • 17 篇 logic gates
  • 17 篇 integrated circu...
  • 16 篇 computer archite...
  • 16 篇 computational mo...
  • 16 篇 clocks
  • 15 篇 circuit simulati...
  • 15 篇 substrates
  • 15 篇 capacitors
  • 14 篇 switches
  • 14 篇 hardware
  • 13 篇 temperature
  • 13 篇 zinc oxide
  • 13 篇 algorithm design...

机构

  • 171 篇 state key labora...
  • 97 篇 state key labora...
  • 72 篇 state key labora...
  • 26 篇 state key labora...
  • 23 篇 state key lab of...
  • 19 篇 asic and system ...
  • 16 篇 university of ch...
  • 15 篇 fudan university...
  • 13 篇 state key labora...
  • 11 篇 state key labora...
  • 11 篇 asic and system ...
  • 11 篇 fudan university
  • 11 篇 asic & system st...
  • 11 篇 asic & system st...
  • 11 篇 state key labora...
  • 10 篇 department of ma...
  • 10 篇 state key labora...
  • 10 篇 asic and system ...
  • 10 篇 state key labora...
  • 10 篇 state key lab. o...

作者

  • 67 篇 david wei zhang
  • 53 篇 peng zhou
  • 50 篇 xuan zeng
  • 36 篇 dian zhou
  • 33 篇 jia zhou
  • 31 篇 xin-ping qu
  • 26 篇 yu-long jiang
  • 25 篇 guo-ping ru
  • 24 篇 zhang david wei
  • 23 篇 qing-qing sun
  • 23 篇 shi-jin ding
  • 23 篇 zhou jia
  • 22 篇 张卫
  • 22 篇 qu xin-ping
  • 22 篇 junyan ren
  • 21 篇 yiping huang
  • 20 篇 wenzhong bao
  • 20 篇 xiaoyang zeng
  • 18 篇 bing-zong li
  • 17 篇 lin chen

语言

  • 958 篇 英文
  • 29 篇 中文
  • 10 篇 其他
检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"
997 条 记 录,以下是571-580 订阅
排序:
The Evolution of the HfSiOx/Si Interface along with the Increase of Forming Gas Annealing Temperature
The Evolution of the HfSiOx/Si Interface along with the Incr...
收藏 引用
2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)
作者: Wen Yang Yang Geng Run-chen Fang Qing-Qing Sun Hong-liang Lu Peng Zhou Shi-Jin Ding David Wei Zhang State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University
Hafnium silicate-based Metal Oxide Semiconductor (MOS)capacitors were fabricated by atomic layer *** interface evolution of the films with forming gas annealing was *** is found that most of the slow interface state... 详细信息
来源: 评论
Structural and Electrical Characteristics of Al-doped TiO2 High-k Gate Dielectric Grown by Atomic Layer Deposition
Structural and Electrical Characteristics of Al-doped TiO2 H...
收藏 引用
2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)
作者: Zhang-Yi Xie Yang Geng Zhi-Yuan Ye Qing-Qing Sun Peng-Fei Wang Hong-Liang Lu David-Wei Zhang State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University
Al-doped TiO2 thin films grown on Si(100)by atomic layer deposition has been investigated as a potential high dielectric constant insulator in the application of *** film thickness is determined by spectroscopy elli... 详细信息
来源: 评论
Fabrication and piezoresponse of electrospun ultra-fine Pb(Zr 0.3, Ti0.7)O3 nanofibers
Fabrication and piezoresponse of electrospun ultra-fine Pb(Z...
收藏 引用
作者: Fan, Meng Hui, Wenyuan Li, Zhidong Shen, Zhenkui Li, Hui Jiang, Anquan Chen, Yifang Liu, Ran Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai 200433 China Rutherford Appleton Laboratory STFC Chilton Didcot Oxon OX11 0QX United Kingdom
Ultra-fine Pb(Zr0.3, Ti0.7)O3 (PZT) fibers with diameters down to ∼100 nm have been synthesized by combing the sol-gel method and elecrospinning technique. The as-spun nanoscopic PZT/PVP composite fibers were anneale... 详细信息
来源: 评论
Generation of coherent optical multi-carriers using concatenated,dual-drive Mach-Zehnder and phase modulators
收藏 引用
中国光学快报(英文版) 2012年 第7期10卷 17-21页
作者: Shumin Zou Yiguang Wang Yufeng Shao Junwen Zhang Jianjun Yu Nan Chi State Key Laboratory of ASIC and System Department of Communication Science and EngineeringFudan UniversityShanghai 200433China
The generation of coherent optical subcarriers based on a concatenated dual-drive Mach-Zehnder intensity modulator (IM) and two phase modulators (PMs) is proposed and experimentally *** modulation index and DC bias of... 详细信息
来源: 评论
An improved coarse synchronization scheme in 3GPP LTE downlink OFDM systems
An improved coarse synchronization scheme in 3GPP LTE downli...
收藏 引用
IEEE International Symposium on Circuits and systems (ISCAS)
作者: Na Ding Chen Chen Wenhua Fan Yun Chen Xiaoyang Zeng State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China
In this paper, an improved algorithm of coarse synchronization in the downlink of 3GPP LTE system is presented. This new algorithm can reduce the MSE (mean square error) of detected fractional carrier frequency offset... 详细信息
来源: 评论
Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application  12
Investigation of schottky junction and mos technology for 11...
收藏 引用
12th International Workshop on Junction Technology, IWJT 2012
作者: Chen, Jun Ku, Teng-Chieh Li, Ming-Fu Chin, Albert State Key Lab ASIC and System Department of Microelectronics Fudan University Shanghai200433 China Department of Electronics Engineering Institute of Electronics National Chiao Tung University Hsinchu300 Taiwan
This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C fo... 详细信息
来源: 评论
Direct Copper Electrodeposition onto Cobalt Adhesion Layer in Alkaline Bath
Direct Copper Electrodeposition onto Cobalt Adhesion Layer i...
收藏 引用
2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)
作者: Wen-Zhong Xu Jing-Xuan Wang Hai-Sheng Lu Xu Zeng Jing-Bo Xu Xin-Ping Qu State key lab of ASIC and system Department of MicroelectronicsFudan University
The direct electroplating of copper film on an ultrathin cobalt film in the alkaline bath was *** plating bath consists of CuSO4·5H2O and *** is found that the ethylenediamine can well stop the cobalt reaction wi... 详细信息
来源: 评论
Construction of Graphene-based modified Electrochemical Sensor by Electropolymerization
Construction of Graphene-based modified Electrochemical Sens...
收藏 引用
2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)
作者: Yuhua Yu Jia Zhou ASIC and System State Key Lab Department of MicroelectronicsFudan University
This paper reported a graphene(GNE)-based integrated planar electrochemical microsensor array fabricated by *** with conventional drop-coating method,the optimized single-step electropolymerization was introduced by i... 详细信息
来源: 评论
Effects of oxygen plasma etching and post-annealing on Pt Schottky contact on Mg-doped InZnO
Effects of oxygen plasma etching and post-annealing on Pt Sc...
收藏 引用
2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)
作者: Yan-Ping Deng Jia-Hong Wu Xin-Ping Qu State key lab of ASIC and system Department of MicroelectronicsFudan University
Mg-doped InZnO(MIZO)films were prepared by sol-gel *** surface of the films was treated by oxygen *** was then deposited on O2-treated films to form MIZO/Pt Schottky *** I-V properties of this structure were studied... 详细信息
来源: 评论
The thermal and electrical properties of CoMo alloys as copper adhesion/barrier layers
The thermal and electrical properties of CoMo alloys as copp...
收藏 引用
2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)
作者: Jing-Xuan Wang Wen-Zhong Xu Fei Chen Hai-Sheng Lu Xu Zeng Xin-Ping Qu State key lab of ASIC and system Department of MicroelectronicsFudan University
CoMo alloys as copper diffusion barriers were investigated in this *** thermal stability was studied after annealing,which was measured by FPP, XRD,SEM and *** to the electrical test,we carried out a new p-cap structu... 详细信息
来源: 评论