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2012 IEEE 11th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2012)

作者： Jianfeng Chen Yuhua Yu Sheng Yang Shih-Kang Fan Jia Zhou ASIC and System State Key Lab Department of MicroelectronicsFudan University Department of Mechanical Engineering National Chiao Tung University

This paper reports a novel monolithic lab-on-a-chip （LOC）with an electrochemical system embedded in an electrowetting on dielectric（EWOD）microfluidic device for the first *** fabrication process is compatible with IC *** chip could not only merge and transport droplets successfully,but show good electrochemical responses of glucose and glucose oxidase with the sensitivity of 0.028mA/mM and the statistic adjust R-square of 0.9549.

关键词： Microfluidics Sugar Electrodes Fabrication Gold Lab-on-a-chip Dielectrics

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Investigation of Schottky junction and MOS technology for III–V compound semiconductor MOSFET application

Investigation of Schottky junction and MOS technology for II...

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International Workshop on Junction Technology

作者： Jun Chen Teng-Chieh Ku Ming-Fu Li Albert Chin State Key Laboratory ASIC and System Department of Microelectronics Fudan University Shanghai China Department of Electronics Engineering and Institute of Electronics National Chiao Tung University Hsinchu Taiwan

This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for source/drain (S/D) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAlO 3 (LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5×10 -3 A/cm 2 for 500°C RTA treated samples at V fb -1V were achieved.

关键词： Capacitors MOSFET circuits Gallium arsenide Silicon Annealing Fitting Abstracts

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Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi_(2)Ta_(2)O_(9)/Pt Thin-Film Capacitors

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Chinese Physics Letters 2011年第7期28卷 275-277页

作者： CHEN Min-Chuan JIANG An-Quan State Key Laboratory of ASIC&System Department of MicroelectronicsFudan UniversityShanghai 200433

We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode *** avoid the crosstalk problem between adjacent memory cells,the safe distance between adjacent elements of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin−film capacitors is estimated to be 0.156µ***,the fatigue of Pt/SrBi_(2)Ta_(2)O_(9)/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.

关键词： electrode volatile film

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The nano-scale resistive memory effect of graphene oxide

The nano-scale resistive memory effect of graphene oxide

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IEEE Nanotechnology Materials and Devices Conference (NMDC)

作者： H. Q. Wei P. Zhou Q. Q. Sun L. H. Wang Y. Geng D. W. Zhang X. B. Wang ASIC & System State Key Laboratory School of Microelectronics Fudan University Shanghai China School of Materials Science and Engineering Hubei University Wuhan China

ISBN: (纸本)9781467328715

An attractive+ to graphene for a range of applications is graphene oxide (GO). GO is an insulator because of the hydroxyl, carboxyl, carbonyl and epoxide functional groups presenting on the basal surface or edge and becomes a semiconductor or semimetal as it is reduced back toward graphene. Here we demonstrate that graphene oxide can be reversibly reduced and oxidized in nanometer-scale by applying bias voltages by the nano-tip of conductive atomic force microscopy system. The low resistance state (LRS) when reduced and a high resistance state (HRS) when oxidized can be achieved under the opposite applied bias direction. The LRS (around 10 KΩ and HRS (around 40 M Ω) were stable for more than 10 3 s, and no obvious degradation was observed during the tests. Threshold voltages for reduction and oxidation, which can be considered as the set and reset voltages is around -6.5 V and +7 V, respectively. It is shown that the hydrogen (H+) ions and hydroxyl ions (OH-) dissociated from the water meniscus formed between the tip and GO in ambient condition at room temperature plays an essential role in the resistive memory switching. It is also found that the negative bias is responsible for the reduction, which is related the transition from HRS to LRS, and the positive bias is responsible for the oxidation, which is related the transition from LRS to HRS, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy is performed to confirm this resistive memory switching behaviors.

关键词： graphene oxide hydroxyl ion base face Bias voltage semimetals Memory effect FORWARD BIAS negative bias Oxidation graphene Lawrencium insulators Semiconductor materials Oxidized

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A new technique for ferroelectric microfluidic channels by rolling method

A new technique for ferroelectric microfluidic channels by r...

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作者： Li, Jinxing Liu, Zhaoqian Lu, Bing-Rui Huang, Gaoshan Chen, Yifang Mei, Yongfeng Liu, Ran State Key Lab of ASIC and System Fudan University Shanghai 200433 China Department of Materials Science Fudan University Shanghai 200433 China MNTC Rutherford Appleton Laboratory Chilton Didcot Oxfordshire OX11 0QX United Kingdom

Microfluidic channels on the size of tens of microns are being developed for use in a variety of applications such as microreactors, DNA analysis, and micro total analysis systems. Among the fabrication techniques for microfluidic channels, the recently-developed rolled-up method provides a great opportunity to integrate tubular channels by selective underetching and release of a strained thin film from a substrate. In this work, microfluidic channels with large diameter-to-length aspect ratios have been fabricated by a rolling method. The micro-FTIR characterization demonstrated that the functional poly(VDF-TrFE) ferroelectric polymer was engineered in the micro channel. The ferroelectric properties of the microchannels were studied by piezoresponse force microscopy (PFM). Local hysteresis measurement suggests that the microchannels show good ferroelectric properties. Fluid moving and emptying of the microfluidic channels were captured by video microscopy. © 2012 Elsevier B.V. All rights reserved.

关键词： Microchannels

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Influence of under-bump metallurgy and solder alloys on the crack in the wafer level chip scale packaging

Influence of under-bump metallurgy and solder alloys on the ...

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IEEE Conference on Electron Devices and Solid-state Circuits

作者： J.H. Lu M. Xu H. Zhang H.L. Lu D.W. Zhang Shanghai Ultra-precision Optical Manufacturing Engineering Center Department of Optical Science and Engineering Fudan University Shanghai China State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

The finite element method (FEM) is employed to investigate the solder crack mechanism in wafer level chip scale packaging (WLCSP). The location of the initial crack is calculated and is compared to the experimental one. Moreover, the impact of the following three aspects, e.g. under-bump metallurgy (UBM) materials, solder alloy, and the thickness of the UBM layers on the initial crack growth in solder is investigated by calculating J-integral, respectively, which reflects the possibility of crack growth. It is concluded that the J-integral values in 96.5Sn3.5Ag solder and the Au-Ni-Cu-Ti UBM material are smaller than other cases.

关键词： Finite element analysis Materials Stress Nickel Gold Strain

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Companding transform for PAPR reduction in coherent optical OFDM system

Companding transform for PAPR reduction in coherent optical ...

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International Conference on Wireless and Optical Communications ( WOCC)

作者： Xinying Li Li Tao Junwen Zhang Yuanquan Wang Yuan Fang Jiangbo Zhu Yiguang Wang Yufeng Shao Nan Chi Department of Communication Science and Engineering State Key Laboratory of Application Specific Integrated Circuit (ASIC) and System Fudan University Shanghai China

μ-law companding and de-companding, which enlarges small signals and compresses large signals, can work successfully in the CO-OFDM transmission system, and μ=1 is the optimal companding coefficient for PAPR reduction.

ISBN: (纸本)9781467309400;9781467309417;9781467309394

关键词： Peak to average power ratio Transforms Optical distortion Optical fibers Nonlinear optics

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A 10-bit 80-MS/s opamp-sharing pipelined ADC with a switch-embedded dual-input MDAC

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Journal of Semiconductors 2011年第2期32卷 102-107页

作者：尹睿廖友春张卫唐长文 ASIC & System State Key Laboratory Fudan University China Ratio Microelectronics Co. Ltd Ratio Microelectronics Co.Ltd

A 10-bit 80-MS/s opamp-sharing pipelined ADC is implemented in a 0.18μm CMOS. An opamp- sharing MDAC with a switch-embedded dual-input opamp is proposed to eliminate the non-resetting and successive-stage crosstalk problems observed in the conventional opamp-sharing technique. The ADC achieves a peak SNDR of 60.1 dB （ENOB = 9.69 bits） and a peak SFDR of 76 dB, while maintaining more than 9.6 ENOB for the full Nyquist input bandwidth. The core area of the ADC is 1.1 mm2 and the chip consumes 28 mW with a 1.8 V power supply.

关键词： pipelined ADC opamp-sharing low power switch-embedded dual-input MDAC

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A novel hardware-oriented decoding algorithm for non-binary LDPC codes

A novel hardware-oriented decoding algorithm for non-binary ...

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IEEE Asia-Pacific Conference on Circuits and systems

作者： Hong Yang Qing-qing Yang Yuanwei Fang Xiaofang Zhou Gerald E. Sobelman State Key Laboratory of ASIC and System Fudan University Shanghai China Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA

This paper presents a novel hardware-oriented decoding algorithm in the log-domain for non-binary LDPC codes over GF(2 m ). As for max-log-SPA, only summations and comparisons are required in this new algorithm. During the vertical update, these two operations are divided into layers based on the distribution of variable vectors that satisfy the check function. The number of additions during the vertical update is reduced by a factor of approximately p-2 without a performance loss, where p is the row weight of the parity check matrix.

关键词： Application specific integrated circuits

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The Evolution of the HfSiO_x/Si Interface along with the Increase of Forming Gas Annealing Temperature

The Evolution of the HfSiO_x/Si Interface along with the Inc...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Wen Yang Yang Geng Run-chen Fang Qing-Qing Sun Hong-liang Lu Peng Zhou David Wei Zhang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781467324748

Hafnium silicate-based Metal Oxide Semiconductor (MOS) capacitors were fabricated by atomic layer deposition. The interface evolution of the films with forming gas annealing was investigated. It is found that most of the slow interface states were passivated through Forming Gas Annealing (FGA), and the D_(it) in the center of the band gap was estimated to be 2.3 × 10~(11) eV~(-1)cm~(-2). It is also found that interface layer can react with HfO_2 to form HfSiO_x in the process of FGA at elevated temperature, and the interface thickness was reduced to 0.4 nm after FGA at 600 ℃.

关键词： hafnium silicate D_(it) FGA

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