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IEEE International Symposium on Circuits and systems

作者： Deping Huang Wei Li Jin Zhou Ning Li Junyan Ren Jinghong Chen Department of Electrical Engineering Southern Methodist University Dallas TX 75205 USA State Key Laboratory of ASIC & System Fudan University Shanghai 201203 China

ISBN: (纸本)9781467302180

The automatic frequency calibration (AFC) technique is routinely used in the wideband frequency synthesizers which contain multiple voltage-controlled oscillator (VCO) tuning curves. In this paper, a counter-based AFC design method is presented. The relationship between the AFC counting time and the VCO tuning curve characteristic is quantitatively analyzed. An AFC circuit which uses a time-to-digital converter (TDC) in the counting process is developed. Simulation results show that the proposed circuit significantly reduces the AFC calibration time while preserving the calibration accuracy. The simulated error-free AFC time of the proposed AFC is less than 3 μs.

关键词： Voltage-controlled oscillators Tuning Frequency conversion Calibration Phase locked loops Accuracy

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Two-dimensional simulation of Mid-infrared quantum cascade lasers: Temperature and field dependent analysis

Two-dimensional simulation of Mid-infrared quantum cascade l...

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International Conference on Numerical Simulation of Optoelectronic Devices, (NUSOD)

作者： Ying-Ying Li Z.-M. Simon Li Guo-Ping Ru State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China Crosslight Software Inc. 121-3989 Henning Dr. Burnaby BC V5C 6P8 Canada

We report on a 2D simulation study of a couple of mid-infrared quantum cascade lasers based on the integration of a number of optoelectronic models. Quantum mechanical computation was performed to find the quantization states and a rate equation approach was used to compute the optical gain. Temperature and field dependence effects are taken into account in optical gain model to make a realistic simulation of QCLs. The simulation study compared the integrated models with experimental data with different structures and at different temperatures. Reasonable agreements between experiment and simulation have been obtained.

关键词： Quantum cascade lasers Mathematical model Computational modeling Equations Temperature Optical refraction Optical variables control

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Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films

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Chinese Physics Letters 2011年第10期28卷 236-239页

作者： LIU Xiao-Bing MENG Jian-Wei JIANG An-Quan WANG Jian-Lu State Key Laboratory of ASIC and System Department of MicroelectronicsFudan UniversityShanghai 200433 National Laboratory Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083

The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric *** coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched ***,the non-ferroelectric capacitance reduces by more than 71%with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.

关键词： ferroelectric capacitance Copolymer

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A partially reconfigurable architecture supporting hardware threads

A partially reconfigurable architecture supporting hardware ...

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IEEE International Conference on Field-Programmable Technology (FPT)

作者： Ying Wang Jian Yan Xuegong Zhou Lingli Wang Wayne Luk Chenglian Peng Jiarong Tong State Key Laboratory of ASIC and System Fudan University Shanghai China Department of Computing Imperial College London London United Kingdom School of Computer Science and Technology Fudan University Shanghai China

As a promising computing platform for stream processing, partially reconfigurable systems have shown their hardware efficiency and reconfiguration flexibility. This paper presents a partially reconfigurable architecture supporting hardware threads. It gives a unified software/hardware thread interface and high throughput point-to-point streaming structure. Dynamic computing resource allocation and streaming-based multi-threaded management are also provided at operating system level. It is easy for programmers to exploit the inherent thread, data and pipeline parallelism in a unified view of threads, enhancing hardware efficiency while improving productivity. The experimental results on a cryptography application demonstrate the feasibility and superior performance. Moreover, the parallelized AES, DES and 3DES hardware threads on field-programmable gate arrays show 1.61-4.59 times higher power efficiency than their implementations on state-of-the-art graphics processing units.

关键词： Hardware Instruction sets Computer architecture Runtime Kernel

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A novel method for fabrication of high-frequency (>100 MHz) ZnO ultrasonic array transducers on silicon substrates

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AIP Conference Proceedings 2012年第1期1433卷 679-682页

作者： W. J. Xu X. M. Ji J. M. Gao J. Carlier J. Y. Zhang B. Nongaillard Y. P. Huang B. Piwakowski Département Opto-Acousto-Electronique I.E.M.N. UMR CNRS 8520 Université de Valenciennes Mont Houy BP311 59313 Valenciennes France ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 China

High-frequency ultrasonic transducer arrays are essential for efficient imaging in clinical analysis and nondestructive evaluation (NDE). However, the fabrication of piezoelectric transducers is really a great challenge due to the small features in an array. A novel technique is presented to fabricate thick-film ZnO ultrasonic array transducers. Piezoelectric elements are formed by sputtering thick-film ZnO onto etched features of a silicon substrate so that the difficult etching process for ZnO films is avoided by etching silicon. This process is simple and efficient. A 13-μm-pitch ZnO sandwich array is achieved with a thickness of 8 μm for 300 MHz. Finite element method is employed to simulate the wave propagation in water based on this new transducer configuration. The acoustic field results indicate this configuration has an acceptable performance. A potential application is proposed based on integration with microfluidics.

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Electrochemical biosensor based on modified graphene oxide for tuberculosis diagnosis

Electrochemical biosensor based on modified graphene oxide f...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Zhang, Pei Chai, Xiaosen Xu, Chun Zhou, Jia State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

In this paper, graphene oxide (GO) was modified in-situ on an electrochemical electrode array for attachment of protein. GO suspension made from natural graphite flakes was directly dip-coated onto the Au working electrodes. Detected by cyclic voltammetry, the peak current of GO on Au electrode increased by 1μA as compared with bare gold electrode. Modified graphgene oxide (MGO) with stable active esters was formed by in-situ modifying GO with N-ethyl-N′-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDAC)/ N-hydroxysuccinimide (NHS). MGO was ready for protein attachment. An immunesensor chip (GO-antigen) was prepared by tuberculosis (TB) antigens bound with MGO. The peak of CV curve of GO-antigen increased by about 3μA as compared with that of MGO, however, after the GO-antigen reaction with the antibody, the peak of the current decreased 4μA. Such results showed potential applications of the immunosensor. © 2011 IEEE.

关键词： Cyclic voltammetry

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A simulation study of vertical tunnel field effect transistors

A simulation study of vertical tunnel field effect transisto...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Han, Zhong-Fang Ru, Guo-Ping Ruan, Gang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

We report a simulation study of the characteristics of a new tunnel field effect transistor (TFET), i.e., vertical TFET (VTFET). The new VTFET has a different working principle compared with the traditional lateral TFET (LTFET), which most of the recent studies are focused on. Although both type TFETs are based on band to band tunneling, the tunneling occurs perpendicular to the oxide-Si interface in the VTFET whereas it occurs parallel in LTFET. The VTFET has many advantages compared with the LTFET, such as a steeper subthreshold slope as the gate voltage control the tunneling directly. The steep subthreshold slope results in low OFF current and capability for low power operation. © 2011 IEEE.

关键词： Tunnel field effect transistors

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Effect of structural parameters on the performance and variations of nanosizes PNIN tunneling field effect transistor

Effect of structural parameters on the performance and varia...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Cheng, S.Q. Yao, C.J. Huang, D.M. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

The characteristics of PNIN tunneling field effect transistor (TFET) with nanometer sizes are investigated using TCAD simulation. The results show that the performance and variations of the device strongly depends on the key parameters such as the thickness and the doping of the middle N layer. (1) An increase in the thickness of the N layer to ∼5 nm will effectively enhance the drive current, reduce the electric field normal to the Si/SiO2 interface (Ex), and reduce the variation of the threshold voltage induced by the variation in the N layer thickness. (2) A decrease in the thickness of Si film down to ∼5 nm will also reduce Ex, but with minor effect on the on current. Therefore, the overall characteristic of PNIN devices improves with reducing the Tsi. (3) A proper doping such as ∼2×1019 cm-3 in the N layer can remove the dependence and therefore the variation of the threshold voltage on the thickness of Si film. © 2011 IEEE.

关键词： Threshold voltage

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Flexible and efficient FEC decoders supporting multiple transmission standards

Flexible and efficient FEC decoders supporting multiple tran...

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8th International SoC Design Conference 2011, ISOCC 2011

作者： Chen, Yun Zhou, Changsheng Huang, Yuebin Huang, Shuangqu Zeng, Xiaoyang Department of Microelectronics State Key Lab. of ASIC and System Fudan University Shanghai China

ISBN: (纸本)9781457707100

An important trend of the modern mobile device is that a single user terminal that will be capable of receiving signals of multiple different transmission standards. Most of these transmission standards employ a forward error correction decoding, including Reed-Solomon, Viterbi, Turbo and low-density parity check and so on. In this overview paper we review several programmable and area-efficient decoder architectures within one hardware platform. We show, in the case of guaranteed throughput performance, compared with multi-core implementation way, better power consumption performance can be gotten. ©2011 IEEE.

关键词： Forward error correction

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The passivation mechanism of nitrogen ions on the gate leakage current of HfO_2/AlGaN/GaN MOS-HEMTs

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Science China(Physics,Mechanics & Astronomy) 2011年第12期54卷 2170-2173页

作者： BI ZhiWei HAO Yue FENG Qian JIANG TingTing CAO YanRong ZHANG JinCheng MAO Wei LU Ling ZHANG Yue Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi＇an 710071 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China School of Electronical ＆ Mechanical Engineering Xidian University Xi＇an 710071 China

In this paper, we systematically study the positive gate leakage current in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs) with HfO 2 dielectric using atomic layer deposition (ALD). We observe that the incorporated nitrogen ions will improve the positive gate leakage current of devices obviously, but do not change the reverse gate leakage current. The passivation mechanism of nitrogen ions in oxygen vacancies in HfO 2 is studied by first-principles calculations. It is shown that the gap states of HfO 2 caused by oxygen vacancies increase the positive gate leakage current of MOS-HEMTs. Nitrogen ions passivate the gap states of HfO 2 and decrease the positive gate leakage current but do not effect the reverse gate leakage current.

关键词： AlGaN/GaN MOS-HEMT passivation gate leakage current nitrogen ions

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