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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Han, Zhong-Fang Ru, Guo-Ping Ruan, Gang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

We report a simulation study of the characteristics of a new tunnel field effect transistor (TFET), i.e., vertical TFET (VTFET). The new VTFET has a different working principle compared with the traditional lateral TFET (LTFET), which most of the recent studies are focused on. Although both type TFETs are based on band to band tunneling, the tunneling occurs perpendicular to the oxide-Si interface in the VTFET whereas it occurs parallel in LTFET. The VTFET has many advantages compared with the LTFET, such as a steeper subthreshold slope as the gate voltage control the tunneling directly. The steep subthreshold slope results in low OFF current and capability for low power operation. © 2011 IEEE.

关键词： Tunnel field effect transistors

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Electrochemical biosensor based on modified graphene oxide for tuberculosis diagnosis

Electrochemical biosensor based on modified graphene oxide f...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Zhang, Pei Chai, Xiaosen Xu, Chun Zhou, Jia State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

In this paper, graphene oxide (GO) was modified in-situ on an electrochemical electrode array for attachment of protein. GO suspension made from natural graphite flakes was directly dip-coated onto the Au working electrodes. Detected by cyclic voltammetry, the peak current of GO on Au electrode increased by 1μA as compared with bare gold electrode. Modified graphgene oxide (MGO) with stable active esters was formed by in-situ modifying GO with N-ethyl-N′-(3-dimethylaminopropyl) carbodiimide hydrochloride (EDAC)/ N-hydroxysuccinimide (NHS). MGO was ready for protein attachment. An immunesensor chip (GO-antigen) was prepared by tuberculosis (TB) antigens bound with MGO. The peak of CV curve of GO-antigen increased by about 3μA as compared with that of MGO, however, after the GO-antigen reaction with the antibody, the peak of the current decreased 4μA. Such results showed potential applications of the immunosensor. © 2011 IEEE.

关键词： Cyclic voltammetry

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Effect of structural parameters on the performance and variations of nanosizes PNIN tunneling field effect transistor

Effect of structural parameters on the performance and varia...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Cheng, S.Q. Yao, C.J. Huang, D.M. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

The characteristics of PNIN tunneling field effect transistor (TFET) with nanometer sizes are investigated using TCAD simulation. The results show that the performance and variations of the device strongly depends on the key parameters such as the thickness and the doping of the middle N layer. (1) An increase in the thickness of the N layer to ∼5 nm will effectively enhance the drive current, reduce the electric field normal to the Si/SiO2 interface (Ex), and reduce the variation of the threshold voltage induced by the variation in the N layer thickness. (2) A decrease in the thickness of Si film down to ∼5 nm will also reduce Ex, but with minor effect on the on current. Therefore, the overall characteristic of PNIN devices improves with reducing the Tsi. (3) A proper doping such as ∼2×1019 cm-3 in the N layer can remove the dependence and therefore the variation of the threshold voltage on the thickness of Si film. © 2011 IEEE.

关键词： Threshold voltage

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Flexible and efficient FEC decoders supporting multiple transmission standards

Flexible and efficient FEC decoders supporting multiple tran...

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8th International SoC Design Conference 2011, ISOCC 2011

作者： Chen, Yun Zhou, Changsheng Huang, Yuebin Huang, Shuangqu Zeng, Xiaoyang Department of Microelectronics State Key Lab. of ASIC and System Fudan University Shanghai China

ISBN: (纸本)9781457707100

An important trend of the modern mobile device is that a single user terminal that will be capable of receiving signals of multiple different transmission standards. Most of these transmission standards employ a forward error correction decoding, including Reed-Solomon, Viterbi, Turbo and low-density parity check and so on. In this overview paper we review several programmable and area-efficient decoder architectures within one hardware platform. We show, in the case of guaranteed throughput performance, compared with multi-core implementation way, better power consumption performance can be gotten. ©2011 IEEE.

关键词： Forward error correction

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The passivation mechanism of nitrogen ions on the gate leakage current of HfO_2/AlGaN/GaN MOS-HEMTs

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Science China(Physics,Mechanics & Astronomy) 2011年第12期54卷 2170-2173页

作者： BI ZhiWei HAO Yue FENG Qian JIANG TingTing CAO YanRong ZHANG JinCheng MAO Wei LU Ling ZHANG Yue Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi＇an 710071 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China School of Electronical ＆ Mechanical Engineering Xidian University Xi＇an 710071 China

In this paper, we systematically study the positive gate leakage current in AlGaN/GaN metal-oxide-semiconductor high electron-mobility transistors (MOS-HEMTs) with HfO 2 dielectric using atomic layer deposition (ALD). We observe that the incorporated nitrogen ions will improve the positive gate leakage current of devices obviously, but do not change the reverse gate leakage current. The passivation mechanism of nitrogen ions in oxygen vacancies in HfO 2 is studied by first-principles calculations. It is shown that the gap states of HfO 2 caused by oxygen vacancies increase the positive gate leakage current of MOS-HEMTs. Nitrogen ions passivate the gap states of HfO 2 and decrease the positive gate leakage current but do not effect the reverse gate leakage current.

关键词： AlGaN/GaN MOS-HEMT passivation gate leakage current nitrogen ions

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Switchable photonic crystals based on the photonic deformations of the azobenzene containing liquid crystal polymer

Switchable photonic crystals based on the photonic deformati...

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International Solid-state Sensors, Actuators and Microsystems Conference

作者： Yan, Z. Yu, Y.L. Ji, X.M. Department of Materials Science Fudan University Shanghai China State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781457701573

A novel two-dimensional photonic crystal (PC) contained azobenzene crosslinked liquid-crystalline polymers (CLCPs) was fabricated by using the nanoimprinting technique. In accordance with the deformations induced by the photochemical reactions of these azobenzene CLCPs, on/off switch characteristics were observed by alternate irradiation with UV and visible light. A reflectance contrast of about 45% was realized under the excitation of 20 mW/cm2 light intensity. And it exhibited a reversible switch behavior which indicated the high probability of the proliferation of numerous switching PC-based optical device applications. © 2011 IEEE.

关键词： Deformation

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Origin of high on-state current for dopant-segregated Schottky MOSFET

Origin of high on-state current for dopant-segregated Schott...

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2011 IEEE 9th International Conference on asic, asicON 2011

作者： Tang, Yang Zhong, Liu-Lin Jiang, Yu-Long State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781612841908

The origin of the on-state current (Ion) difference between dopant-segregated Schottky (DSS) source/drain MOSFET and conventional MOSFET with 20nm channel length is investigated by device simulation. The simulation results coincide well with the published experimental result. It is revealed that the not-fully-depleted dopant-segregated layer leads to a severe DIBL effect which contributes to the Ion enhancement for DSS MOSFET. © 2011 IEEE.

关键词： MOSFET devices

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A LiNbO3 ultrasonic phased array transducer of more than 100 MHz

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AIP Conference Proceedings 2012年第1期1433卷 675-678页

作者： W. J. Xu X. M. Jib J. Y. Zhang J. Carlier B. Nongaillard S. Queste Y. P. Huang B. Piwakowski Département Opto-Acousto-Electronique I.E.M.N. UMR CNRS 8520 Université de Valenciennes Mont Houy BP311 59313 Valenciennes France ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 China Institut FEMTO-ST CNRS UMR 6174 Université de Franche-Comté 25044 Besançon France

High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the structure design and fabrication of the kerfed ultrasonic array is quite challenging when very high frequency (≥ 100 MHz) is required. Inductively Coupled Plasma (ICP) deep etching process is used to etch 36°/Y-cut lithium niobate (LiNbO3) crystals. Furthermore, a finite element tool, COMSOL, is employed to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. At last, arrays with a pitch of 40 μm are fabricated and characterized by a network analyzer. The measured results agree well with the theoretical predictions.

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A Self-Aligned Mask-Free Fabrication Process for High-Frequency ZnO Array Transducer

A Self-Aligned Mask-Free Fabrication Process for High-Freque...

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IEEE International Ultrasonics Symposium

作者： J. Y. Zhang W. J. Xu J. Carlier E. Moulin D. Remiens X. M. Ji Y. P. Huang S. M. Chen School of Computer National University of Defense Technology Changsha 410073 P. R. China Departement d'Opto-Acousto-Electronique IEMN UMR CNRS 8520 Universite de Valenciennes 59313 Valenciennes France ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 P. R. China

ISBN: (纸本)9781467345613

High-frequency ultrasonic array transducers are essential for high resolution imaging in clinical analysis and Non Destructive Evaluation (NDE). However, the fabrication of piezoelectric array transducers is a great challenge due to the small features in elaborating piezoelectric array films. This paper describes a MEMS based self-aligned mask-free process for fabrication of ZnO linear array transducers of more than 100MHz. A four-step-rotation deposition approach is proposed and investigated, that improves the lateral growth in ZnO array deposition. The ratio of vertical to lateral growth is improved by 40% compared to one-step deposition method. The results prove that the reduction of the lateral growth helps to achieve full-kerfed ZnO array with smaller pitch.

关键词： Fabrication process Transducers automatic calibration zinc oxides Nondestructive Testing arrays Microelectromechanical systems High frequency Lateral

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The complex nanostructure of P(VDF-TrFE) made by dual step hot-embossing

The complex nanostructure of P(VDF-TrFE) made by dual step h...

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IEEE International Nanoelectronics Conference

作者： Wen, Juanjuan Shen, Zhenkui Fang, Jiangrong Lu, Bingrui Qiu, Zhijun Jiang, Anquan Liu, Ran Chen, Yifang State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai China Micro and Nanotechnology Center Rutherford Appleton Laboratory Oxfordshire United Kingdom

ISBN: (纸本)9781457703799

In this work, complex 3D ferroelectric nanostructures on Poly(vinylidenefluoride-trifluoroethylene), P(VDF-TrFE), films have successfully been fabricated using a special hot-embossing process with two sequential shots on the same site with a grating template and a dot array template of the same periodicity at the same hot-embossing temperature. The nanostructures have been characterized with atomic force microscope (AFM), piezoresponse force microscope (PFM) and Fourier transformed infrared spectroscopy (FTIR). It is shown that sequential hot-embossing offers an effective way to fabricate complex 3D nanostructures of functional ferroelectric materials toward various applications. © 2011 IEEE.

关键词： Nanostructures

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