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检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"

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Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Characterization of thermal stability of Ni(SiGe)/n-SiGe con...

引用

IEEE International Conference on Interconnect Technology

作者： Yao-Juan Xu Xiao Guo Guo-Ping Ru Yu-Long Jiang Xin-Ping Qu Bing-Zong Li State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

The contact NiSiGe/SiGe was formed on n-type epitaxial Si 0.84 Ge 0.16 by isothermal annealing at 550°C for different time durations. Thermal stability of the contact was characterized by different methods. Material characterizations show that NiSiGe suffers from agglomeration issue while keeping in the mono-germanosilicide phase under the thermal budget in the experiment. The Schottky contact properties of NiSiGe on n-SiGe were evaluated by current-voltage (I-V) technique at room temperature. The contact shows a reduced Schottky barrier height (SBH) with a continuously increased ideality factor and leakage current with the increase of annealing time, indicating thermal degradation of the contact quality. The results show that besides material analysis, electrical measurement is also a sensitive and supplemental way to characterize the thermal stability of Ni germanosilicide film.

关键词： Annealing Thermal stability Films Nickel Silicon germanium Stability analysis Contacts

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Modulation of Schottky barrier height for NiSi/Si(110) diodes using an antimony interlayer

Modulation of Schottky barrier height for NiSi/Si(110) diode...

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IEEE International Conference on Interconnect Technology

作者： Xiao Guo Yao-Juan Xu Yu-Long Jiang Guo-Ping Ru Bing-Zong Li Asic and System State Key Laboratory Department of Microelectronics Fudan University Shanghai China

The barrier height modulation of Ni-silicided Schottky contacts fabricated on n-Si(100), n-Si(110), p-Si(100) and p-Si(110) substrate using an antimony (Sb) interlayer was investigated. The Sb layer was directly sputter-deposited on Si substrate followed by the regular Ni deposition and rapid thermal annealing. It is revealed that NiSi can still form even with the Sb interlayer and the effective Schottky barrier height can be significantly modulated on all kinds of Si substrates.

关键词： Substrates Nickel Silicon Annealing Schottky barriers Schottky diodes Modulation

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Flexible and efficient FEC decoders supporting multiple transmission standards

Flexible and efficient FEC decoders supporting multiple tran...

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International SoC Design Conference, ISOCC

作者： Yun Chen Changsheng Zhou Yuebin Huang Shuangqu Huang Xiaoyang Zeng Department of Microelectronics State Key Laboratory of ASIC and System Fudan University Shanghai China

An important trend of the modern mobile device is that a single user terminal that will be capable of receiving signals of multiple different transmission standards. Most of these transmission standards employ a forward error correction decoding, including Reed-Solomon, Viterbi, Turbo and low-density parity check and so on. In this overview paper we review several programmable and area-efficient decoder architectures within one hardware platform. We show, in the case of guaranteed throughput performance, compared with multi-core implementation way, better power consumption performance can be gotten.

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Characterization of NbAlO dielectric film deposited on InP

Characterization of NbAlO dielectric film deposited on InP

引用

作者： He, Dawei Cheng, Xinhong Xu, Dawei Wang, Zhongjian Yu, Yuehui Sun, Qingqing Zhang, David Wei State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Changning Road 865 Shanghai 200050 China State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

In this work, NbAlO dielectric films were grown by atomic layer deposition method on InP substrate and were treated with rapid thermal annealing (RTA) process at 500 °C. Synchrotron radiation x-ray reflectivity measurements suggested that 1.5 nm interfacial layer exists at InP interface with a roughness of 0.4 nm. Synchrotron radiation x-ray diffraction showed that NbAlO film was polycrystal after RTA treatment. X-ray photoelectron spectra indicated that Nb-Al, Nb-O, and Al-O bonds existed. The electrical measurements indicated that the equivalent oxide thickness and the dielectric constant were 3.2 and 32 nm, respectively, and the leakage current density increased quickly from 0.6 to 15 mA/ cm2 when gate bias changed from 1 to 4V. © 2011 American Vacuum Society.

关键词： Synchrotron radiation

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Interfacial properties of HfO2 dielectric film on Ge substrate

Interfacial properties of HfO2 dielectric film on Ge substra...

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HfO2 dielectric films were grown on Ge substrate and annealed. High resolution transmission electron microscopy indicated that postdeposition annealing promoted further crystallization of HfO2 films and aggravated interfacial roughness. X-ray reflectivity measurements suggested that the total thickness of the dielectric stacks was 6.5 nm. X-ray photoelectron spectra indicated further oxidization of Ge substrate. The interface layer between HfO2 and Ge was mainly composed of GeO2. The valence band offset between HfO2 and Ge interface was calculated to be 2.0 eV. The electrical measurements indicated that the leakage current density was 10 mA/ cm2 at a gate bias of 2 V. The equivalent oxide thickness was 1.9 nm and the dielectric constant was 13 for the annealed film. © 2011 American Vacuum Society.

关键词： Annealing

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A Simulation Study of Vertical Tunnel Field Effect Transistors

A Simulation Study of Vertical Tunnel Field Effect Transisto...

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2011 IEEE 9th International Conference on asic(2011年第九届IEEE国际专用集成电路大会)

作者： Zhong-Fang Han Guo-Ping Ru Gang Ruan State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

We report a simulation study of the characteristics of a new tunnel field effect transistor (TFET), i.e., vertical TFET (VTFET). The new VTFET has a different working principle compared with the traditional lateral TFET (LTFET), which most of the recent studies are focused on. Although both type TFETs are based on band to band tunneling, the tunneling occurs perpendicular to the oxide-Si interface in the VTFET whereas it occurs parallel in LTFET. The VTFET has many advantages compared with the LTFET, such as a steeper subthreshold slope as the gate voltage control the tunneling directly. The steep subthreshold slope results in low OFF current and capability for low power operation.

关键词： Logic gates MOSFET circuits Immune system

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Effect of Structural Parameters on the Performance and Variations of Nanosizes PNIN Tunneling Field Effect Transistor

Effect of Structural Parameters on the Performance and Varia...

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2011 IEEE 9th International Conference on asic(2011年第九届IEEE国际专用集成电路大会)

作者： S. Q. Cheng C. J. Yao D. M. Huang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

The characteristics of PNIN tunneling field effect transistor (TFET) with nanometer sizes are investigated using TCAD simulation. The results show that the performance and variations of the' device strongly depends on the key parameters such as the thickness and the doping of the middle N layer. (1) An increase in the thickness of the N layer to ~5 run will effectively enhance the drive current, reduce the electric field normal to the Si/SiO2 interface (Ex), and reduce the variation of the threshold voltage induced by the variation in the N layer thickness. (2) A decrease in the thickness of Si film down to ~5 run will also reduce Ex, but with minor effect on the on current. Therefore, the overall characteristic of PNIN devices improves with reducing the Tsi. (3) A proper doping such as ~2xl0l9cm-3 in the N layer can remove the dependence and therefore the variation of the threshold voltage on the thickness of Si film.

关键词： Silicon Germanium Films Semiconductor process modeling Very large scale integration Logic gates Neodymium

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Electrochemical Biosensor Based on Modified Graphene Oxide for Tuberculosis Diagnosis

Electrochemical Biosensor Based on Modified Graphene Oxide f...

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2011 IEEE 9th International Conference on asic(2011年第九届IEEE国际专用集成电路大会)

作者： Pei Zhang Xiaosen Chai Chun Xu Jia Zhou State Key Laboratory of ASIC & System Department of Microelectronics Fudan University. Shanghai 200433 China

In this paper, graphene oxide (GO) was modified insitu on an electrochemical electrode array for attachment of protein. GO suspension made from natural graphite flakes was directly dip-coated onto the Au working electrodes. Detected by cyclic voltammetry, the peak current of GO on Au electrode increased by 1μA as compared with bare gold electrode. Modified graphgene oxide (MGO) with stable active esters was formed by in-situ modifying GO with N-ethyl-N'-(3-dimethylaminopropyI) carbodiimide hydrochloride (EDAC)/ N-hydroxysuccinimide (NHS). MGO was ready for protein attachment. An immunesensor chip (GO-antigen) was prepared by tuberculosis (TB) antigens bound with MGO. The peak of CV curve of GO-antigen increased by about 3μA as compared with that of MGO, however, after the GO-antigen reaction with the antibody, the peak of the current decreased 4μA. Such results showed potential applications of the immunosensor.

关键词： Graphene oxide Biosensor Electrochemistry Immunosensor

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Robust low-voltage program-erasable capacitors of Pd-Al2O3-Si with high density Ru-based nanocrystals embedded

Robust low-voltage program-erasable capacitors of Pd-Al2O3-S...

引用

IEEE International Conference on Interconnect Technology

作者： Hong-Yan Gou Shi-Jin Ding Qing-Qing Sun David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

Pd electrode-based metal-oxide-semiconductor (MOS) capacitors with high density Ru-based nanocrystals in atomic-layer-deposited Al 2 O 3 dielectric have been fabricated and electrically characterized, exhibiting robust programming and erasing characteristics even under low voltages. Further, the tunable memory characteristics of the MOS capacitors are demonstrated by varying the tunneling-layer (T)/blocking-layer (B) thickness ratio, and the underlying mechanisms are addressed.

关键词： Nanocrystals Tunneling Programming Aluminum oxide Annealing Capacitors Films

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A practical method for multi-domain clock skew optimization 11

A practical method for multi-domain clock skew optimization

引用

Asia and South Pacific Design Automation Conference

作者： Yanling Zhi Hai Zhou Xuan Zeng State Key Laboratory of ASIC & System Microelectronics Department Fudan University China Department of EECS Northwestern University USA

ISBN: (纸本)9781424475162

Clock skew scheduling is an effective technique in performance optimization of sequential circuits. However, with process variations, it becomes more difficult to reliably implement a wide spectrum of clock delays at the registers. Multidomain clock skew scheduling is a good option to overcome this limitation. In this paper, we propose a practical method to efficiently and optimally solve this problem. A framework based on branch-and-bound is carefully designed to search for the optimal clocking domain assignment, and a greedy clustering algorithm is developed to quickly estimate the upper bound of cycle period for a given branch. Experiment results on ISCAS89 sequential benchmarks show both the optimality and efficiency of our method compared with previous works.

关键词： Registers Clocks Clustering algorithms Upper bound Timing Optimization Merging

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