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International Conference on Space Optical systems and Applications

作者： Jingyuan Fan Xiaolin Zhou Jun Liu State Key Laboratory of ASIC & System and Department of Communication Science and Engineering Fudan University Shanghai 200433 China

ISBN: (纸本)9781424496860

In this paper, we illustrate our attempt in an effective method of free space optical (FSO) communications. Firstly, a pulse-position modulated (PPM) optical interleave-division multiple-access (OIDMA) system is designed. Secondly, to alleviate the degrading effects of atmospheric turbulence, cooperative relay technique is adopted by OIDMA for achieving spatial diversity and robust transmission performance. Thirdly, to study the convergence behavior of the proposed relay-assisted optical PPM-OIDMA system, extrinsic information transfer (EXIT) charts are analyzed. By deriving the trajectories of the exchanged extrinsic information from EXIT charts, the time of iterations required for convergence can be easily predicted. The effects of scintillation, thermal noise, background noise and multi-user interference have been taken into consideration.

关键词： EXIT analysis OIDMA cooperative relay free-space optical EXITS free-space optical communication interleave division multiple access Multi-user Interference relay Optical systems Converge iterative methods optical

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Logic-based mega-bit CuxSiyO emRRAM with excellent scalability down to 22nm node for post-emFLASH SOC era

2011 3rd IEEE International Memory Workshop, IMW 2011

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2011 3rd IEEE International Memory Workshop, IMW 2011 2011年

作者： Wang, Yanliang Yang, Lingming Wang, Ming Luo, Wenjin Huang, Ryan Zou, Qingtian Wu, Jingang Hu, Beiyuan Lin, Yinyin ASIC and System State Key Laboratory Dept. Microelectronics Fudan University Shanghai China Technology Research and Development Center Semiconductor Manufacturing International Corp. Shanghai China

ISBN: (纸本)9781457702266

Excellent scalability of a novel CuxSiyO emRRAM down to 22nm node is demonstrated based on statistical data of 1Mb test chip for the first time. The integration utilizes the standard logic process and the RRAM size is shrunk by spacer pattern technology. The reset current decreases by 5X from 130nm to 22nm node with maintaining robust data retention (10yrs. @150°C), good resistance distribution (with 10X window @125°C), significant read disturbance immunity (after 1010 cycles @0.5V, 50ns pulse), acceptable fast speed (set 100ns;reset 60us), and competitive cost effectiveness (no dedicated tools). This solution is promising in the advanced logic node for SOC applications of post-emFLASH era. © 2011 IEEE.

关键词： Scalability

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Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems

Thermal ALD of Cu via reduction of CuxO films for the advanc...

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2011 IEEE Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011

作者： Mueller, Steve Waechtler, Thomas Hofmann, Lutz Tuchscherer, André Mothes, Robert Gordan, Ovidiu Lehmann, Daniel Haidu, Francisc Ogiewa, Marcel Gerlich, Lukas Ding, Shao-Feng Schulz, Stefan E. Gessner, Thomas Lang, Heinrich Zahn, Dietrich R.T. Qu, Xin-Ping Center for Microtechnologies Chemnitz University of Technology D-09107 Chemnitz Germany D-09126 Chemnitz Germany Department of Inorganic Chemistry Chemnitz University of Technology D-09107 Chemnitz Germany Department of Semiconductor Physics Chemnitz University of Technology D-09107 Chemnitz Germany D-01099 Dresden Germany State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781457704291

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P) 2Cu(acac)] and a mixture of water vapor and oxygen ("wet O 2") as co-reactant at temperatures between 100 and 130°C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents. © 2011 IEEE.

关键词： Electrochemical deposition

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Direct metal nano-patterning on irregular substrate surfaces by reversal imprint lithography

Direct metal nano-patterning on irregular substrate surfaces...

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IEEE International Nanoelectronics Conference (INEC)

作者： Bing-Rui Lu Xin-Ping Qu Ran Liu Yifang Chen Yuanyuan Wang Department of Electronic Engineering Fudan University Shanghai China State key Laboratory of Asic and system Department of Microelectronics Fudan University Shanghai China Rutherford Appleton Laboratory Micro and Nanotechnology Center Oxon UK

We demonstrate a new direct metal patterning method to form nanoscale patterns on irregularly shaped substrates through a reversal imprint process, called Reversal Imprint Metal Transfer (RIMT). Using commonly processed nano patterns in resist after metal deposition before lift-off procedure, instead of being removed through lift-off, the metal on top of the resist is transferred to another irregular substrate such as a tip, a sidewall, an optic fiber and a glass wedge face by a reversal imprint. This method is able to improve the efficiency of nanolithography by smplying the whole processes, while realize the possibility to create metal patterns on irregular substrates which might be extremely difficult to be achieved by conventional lithography methods.

关键词： Metals Substrates Resists Optical fibers Lithography Optical device fabrication

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Dielectric Fresnel zone plates on optical fibers for micro-focusing applications

Dielectric Fresnel zone plates on optical fibers for micro-f...

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作者： Lu, Bing-Rui Li, Jin-Xing Guo, Hong-Bin Gao, Chen Huq, Ejaz Qu, Xin-Ping Chen, Yifang Liu, Ran State Key Lab of ASIC and System Fudan University No. 220 Handan Rd. Shanghai 200433 China Micro and Nanotechnology Centre Rutherford Appleton Laboratory Chilton Didcot Oxfordshire OX11 0QX United Kingdom School of Microelectronics Fudan University 220 Handan Road Shanghai China

In this paper, we present a novel fabrication technique for constructing light focusing lenses, dielectric Fresnel zone plates on both flat wafers and tips of plastic optical fibers (POFs). SU-8 zone plate structures are made on glass substrate by photolithography with ink-printed soft mask, and then used as the template for hot embossing on the tip of PMMA POF. Focusing behavior for both 472 and 633 nm laser beams and LEDs in different colors are observed on glass wafers and POF tips, indicating that the proposed dielectric Fresnel zone plates can be built onto both substrate by a direct hot embossing process which may lead to a high volume production at low cost. Light intensity measurement on POFs proves that light focusing is achieved while intensity is maintained. This structure is expected to have broad applications in micro-imaging, micro-focusing as well as point-of-care medical surgeries. © 2011 Elsevier B.V. All rights reserved.

关键词： Glass

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Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition

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Chinese Physics Letters 2010年第2期27卷 270-272页

作者：杨春晓张驰孙清清徐赛生张立峰施煜丁士进张卫 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433

An ultra-low-dielectric-constant （ultra low-k, or ULK） porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k （i.e., 1.94 at 1 MHz）, smaller leakage current density （2.96×10-7 A/cm2 at 1 MV/cm） and higher breakdown field strength （about 3.5 MV/cm）, which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.

关键词： Packaging materials Films Potassium Density Strength Fields

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Band Structures of Metal-Oxide Capped Graphene： A First Principles Study

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Chinese Physics Letters 2010年第7期27卷 225-228页

作者：刘晗孙清清陈琳徐岩丁士进张卫张世理 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433

We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.

关键词： Layering Thinning

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Positive bias temperature instability degradation of InGaAs n-MOSFETs with Al2O3 gate dielectric

Positive bias temperature instability degradation of InGaAs ...

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International Electron Devices Meeting (IEDM)

作者： G. F. Jiao W. Cao Y. Xuan D. M. Huang P. D. Ye M. F. Li State Key Laboratory ASIC & System Department Microelectronics Fudan University Shanghai China School of Electrical and Computer Engineering and Birck Nanotechnology Center Purdue University West Lafayette IN USA

CP measurements show that PBTI stress induced interface trap area density ΔN it in InGaAs/Al 2 O 3 n-MOSFET is very small and has power law time evolution At 0.22 in the stress phase, and is partially recovered in the recovery phase. However the DC I s -V g measurements show large degradations of negative ΔV g and sub-threshold swing S in the sub-threshold region and are recovered in the recovery phase, also show degradation of positive ΔV g in the on-current region and continuing degradation in the recovery phase until reaching a stable state. The I s -V g degradation is mainly contributed by generation of near interface slow oxide traps under stress with recoverable donor trap energy density ΔD SOX DONOR in the InGaAs energy gap with a tail extended to the conduction band energy, and permanent acceptor trap energy density ΔD SOX ACCEPTOR in the conduction band energy with a tail extended to the energy gap. This trap model explains all experimental details perfectly.

关键词： Stress Degradation Stress measurement MOSFET circuits Electron traps Silicon Indium gallium arsenide

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Stochastic coverage in event-driven sensor networks

Stochastic coverage in event-driven sensor networks

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IEEE International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC)

作者： Huimin She Zhonghai Lu Axel Jantsch Dian Zhou Li-Rong Zheng IPack VINN Excellence Center School of Information and Communication Technology Royal Institute of Technology Stockholm Sweden State Key Laboratory of ASIC & System Department of Microelectronics Fudan University China

ISBN: (纸本)9781457713460

One of the primary tasks of sensor networks is to detect events in a field of interest (FoI). To quantify how well events are detected in such networks, coverage of events is a fundamental problem to be studied. However, traditional studies mostly focus on analyzing the coverage of the FoI, which is usually called area coverage. In this paper, we propose an analytic method to evaluate the performance of event coverage in sensor networks with randomly deployed sensor nodes and stochastic event occurrences. We provide formulas to calculate the probabilities of event coverage and event missing. The numerical results show how these two probabilities change with the sensor and event densities. Moreover, simulations are conducted to validate the analytic method. This method can provide guidelines for determining the amount of sensor nodes to achieve a certain level of coverage in event-driven sensor networks.

关键词： Sensors Wireless sensor networks Stochastic processes Animals Monitoring Analytical models Numerical models

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Wireless powered implantable bio-sensor tag system-on-chip for continuous glucose monitoring

Wireless powered implantable bio-sensor tag system-on-chip f...

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IEEE Biomedical Circuits and systems (BIOCAS)

作者： Shuo Guan Jingren Gu Zhonghan Shen Junyu Wang Yue Huang Andrew Mason State Key Laboratory of ASIC and System Fudan University Shanghai China Department of Electrical and Computer Engineering Michigan State University East Lansing USA

An implantable passive radio frequency identification (RFID) sensor tag system-on-chip (SoC) for glucose monitoring is developed in this paper. A high frequency RFID tag, a bio-sensor interface, as well as the electrodes are included in this chip. The signal of blood sugar level from the bio-sensor is detected and converted into digital data, and then the data is encrypted and transmitted to an RFID reader on top of the skin. To measure the weak current signals, a current readout circuit, a current splitter, an ADC and a potentiostat are designed in the chip. Correlated double sample (CDS) technology is used in the readout circuit to reduce the 1/f noise and the op-amp's offset. The chip is taped out in SMIC 0.13 μm CMOS process. Simulation results show that the system can measure weak current signals in the range of 10 fA-100 pA.

关键词： Baseband Sugar Rectifiers system-on-a-chip Clocks Current measurement Radiofrequency identification

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