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IEEE Symposium (IUS) Ultrasonics

作者： J. Y. Zhang X. M. Ji J. Zhou Y. P. Huang W. J. Xu J. Carlier J. M. Gao B. Nongaillard Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai China Département Opto-Acousto-Electronique I.E.M.N. UMR CNRS 8520 Université de Valenciennes Valenciennes France

ISBN: (纸本)9781457712531

High-frequency ultrasonic transducer arrays are essential for efficient imaging in clinical analysis and nondestructive evaluation (NDE). However, the fabrication of piezoelectric transducers is really a great challenge due to the small features in piezoelectric films. This paper describes a novel technique to fabricate thick-film ZnO ultrasonic array transducers. Piezoelectric elements are formed by sputtering thick-film ZnO onto etched features of a silicon substrate so that the difficult etching process for ZnO films is avoided by etching silicon. This process is simple and efficient. A 13-μm-pitch ZnO sandwich array is achieved with a thickness of 8 μm for 300 MHz. Finite element method is employed to calculate its electrical properties, including electrical impedance and crosstalk. The array is characterized by a network analyzer. The measured results are in good agreement with the theoretical predictions.

关键词： Zinc oxide Arrays Films Finite element methods Silicon Acoustics

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Simulation of Carrier Transport in Quantum Cascade Lasers

Simulation of Carrier Transport in Quantum Cascade Lasers

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2011 IEEE 9th International Conference on asic(2011年第九届IEEE国际专用集成电路大会)

作者： Yingying Li Guo-Ping Ru Z.-M. Simon Li State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai Crosslight Software Inc. 121-3989 Henning Dr. Burnaby BC V5C 6P8 Canada

We report a simulation study of carrier transport in quantum cascade lasers (QCLs) based on non-local transport model. In this model, drift-diffusion equations are solved with modification of' current density by accounting for long-range carrier transport including quantum tunneling and hot carrier transport in the device. From the simulation results of an AlInGaAs/InP QCL at different temperatures, it is found that our model shows reasonable agreement with experiments at lower temperature when carriers are well confined while substantial deviation is observed at higher temperatures when the leakage of carriers into the continuum is significant.

关键词： Quantum cascade lasers Silicon Photodetectors

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Optical homodyne receiver utilizing image rejection in FSK/ASK re-modulation WDM-PON

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Chinese Optics Letters 2010年第9期8卷 906-908页

作者：方圆刘霄郑曦侯春宁方武良黄博李欣颖邹书敏张俊文邵宇丰迟楠 Department of Communication Science & Engineering State Key Laboratory of ASIC & System Fudan University

Optical frequency shift keying （FSK） homodyne detection utilizing image rejection in FSK/amplitude shift keying （ASK） re-modulation wavelength-division-multiplexed passive optical network （WDM-PON） is proposed and demonstrated. Image rejection is adopted to achieve better performance. We show the result in back-to-back and 40-km distance respectively and apparent improvement is obtained in the latter situation by using image rejection. Several factors which affect the image rejection receiver are analyzed in order to find out the optimum parameters. Result shows that the presented scheme is suitable for super long reach access network, especially for future metro access network.

关键词： Fiber optic networks Frequency shift keying Wavelength division multiplexing

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A Method to Build Reconfigurable Architectures by Extracting Common Subgraphs

A Method to Build Reconfigurable Architectures by Extracting...

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2011 IEEE 9th International Conference on asic(2011年第九届IEEE国际专用集成电路大会)

作者： Rui Zhang Tianyun Zhang Lingli Wang Yu Hu Software School Fudan University Shanghai 200433 China State Key Laboratory of ASIC & System Fudan University Shanghai 200433 China Electrical and Computer Engineering Department University of Alberta Canada

In this paper, we present a novel method to build reconfigurable architectures. Because an RTL description of a circuit can be converted to a data flow graph (DFG), our method is based on graph mining which aims to extract the common subgraphs among different benchmarks. A tool flow is proposed to convert benchmarks to data flow graphs and extract the common subgraphs. Benchmarks in the field of Error Checking and Correcting (ECC) are selected in the experiment to demonstrate that our method is correct and practical.

关键词： Logic gates Hardware design languages Manuals Internet Silicon Encyclopedias

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Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems

Thermal ALD of Cu via reduction of CuxO films for the advanc...

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Semiconductor Conference Dresden

作者： Steve Mueller Thomas Waechtler Lutz Hofmann André Tuchscherer Robert Mothes Ovidiu Gordan Daniel Lehmann Francisc Haidu Marcel Ogiewa Lukas Gerlich Shao-Feng Ding Stefan E. Schulz Thomas Gessner Heinrich Lang Dietrich R.T. Zahn Xin-Ping Qu Center for Microtechnologies Chemnitz University of Technology Chemnitz Germany Department of Inorganic Chemistry Chemnitz University of Technology Chemnitz Germany Department of Semiconductor Physics Chemnitz University of Technology Chemnitz Germany Fraunhofer Center Nanoelectronic Technologies Dresden Germany State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

In this work, an approach for copper atomic layer deposition (ALD) via reduction of Cu x O films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal Cu x O ALD process is based on the Cu (I) β-diketonate precursor [( n Bu 3 P) 2 Cu(acac)] and a mixture of water vapor and oxygen (“wet O 2 ”) as co-reactant at temperatures between 100 and 130°C. Highly efficient conversions of the Cu x O to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed/Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the Cu x O films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.

关键词： Copper Films Nickel Substrates Ultra large scale integration Atomic layer deposition Sputtering

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Magnetic and meniscus-effect control of catalytic rolled-up micromotors

Magnetic and meniscus-effect control of catalytic rolled-up ...

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作者： Li, Jin-Xing Lu, Bing-Rui Shen, Zhenkui Xu, Zhencheng Li, Hui Wen, Juanjuan Li, Zhidong Qu, Xin-Ping Chen, Yi-Fang Mei, Yongfeng Liu, Ran State Key Lab of ASIC and System Fudan University Shanghai 200433 China MNTC Rutherford Appleton Laboratory Chilton Didcot Oxfordshire OX11 0QX United Kingdom Department of Materials Science Fudan University Shanghai 200433 China Institute for Integrative Nanosciences IFW Dresden Helmholtzstr. 20 01069 Dresden Germany School of Microelectronics Fudan University 220 Handan Road Shanghai China Department of Materials Science Fudan University 220 Handan Road Shanghai China Nanoscience and Nanotechnology Micro and Nanotechnology Centre China

Rolled-up catalytic micromotors with tubular structures are fabricated by rolling up strained Pt/Co/Ti metallic nanomembranes through selectively etching of the sacrificial lift off resist (LOR). The rolled-up micromotors present distinct motion behaviors in an organic/aqueous mixture fuel compared to those in a pure aqueous fuel. These self-propelled micromotors can move in pure aqueous fuel with a speed up to several millimeters per second. However, when placed into an organic/aqueous mixture fuel, the micromotors walk on the liquid surface. An intermediate Co layer facilitates a magnetically guided motion of these microtubular motors. The motion at the air-liquid interface can be regulated and suspended by the meniscus-climbing effect. Such meniscus-navigated motion represents a novel approach for regulation of micromotors at the air-liquid interface and opens the door to new and exciting operations of these micro-scale machines. © 2011 Elsevier B.V. All rights reserved.

关键词： Mixtures

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1.96 Tb/s (21$\,\times\,$100 Gb/s) OFDM Optical Signal Generation and Transmission Over 3200-km Fiber

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IEEE Photonics Technology Letters 2011年第15期23卷 1061-1063页

作者： Jianjun Yu Ze Dong Nan Chi ZTE Inc. Beijing China Department of Communication Science and Engineering State Key Laboratory of ASIC & System Fudan University Shanghai China Hunan University Hunan China Georgia Institute of Technology Atlanta GA USA Fudan University Shanghai China

A novel scheme to generate coherent 21 optical subcarriers with fixed frequency of 25 GHz is proposed and experimentally demonstrated. Using these optical subcarriers, we have successfully generated 1.96 Tb/s (21 × 100 Gb/s) polarization-multiplexing optical orthogonal frequency multiplexed (PM-OFDM) polarization multiplexed quadrature phase-shift keying (QPSK) optical superchannel signal with optical signal-noise ratio of each subchannel larger than 30 dB (0.1-nm bandwidth). We have transmitted this 1.96-Tb/s optical OFDM superchannel over 3200-km SMF-28 with amplification span of 80 km with erbium-doped fiber amplifier-only.

关键词： Optical polarization Optical fibers Optical amplifiers Optical filters Optical modulation Phase modulation

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Investigation of fabricating a LiNbO3 ultrasonic phased array transducer of more than 100 MHz

Investigation of fabricating a LiNbO3 ultrasonic phased arra...

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IEEE SENSORS

作者： J. Y. Zhang W. J. Xu J. Carlier X. M. Ji B. Nongaillard S. Queste Y. P. Huang ASIC and System State Key Laboratory Department of Microelectronics Fudan University Shanghai China Département Opto-Acousto-Electronique I.E.M.N. UMR CNRS 8520 Université de Valenciennes Valenciennes France Institut FEMTO-ST CNRS UMR 6174 Universita de Franche-Comté Besancon France

ISBN: (纸本)9781424492909

36°/Y-cut lithium niobate (LiNbO 3 ) single crystals have been patterned by means of Inductively Coupled Plasma (ICP) deep etching to create ultrasonic arrays resonating in the frequency range of 100-200 MHz. The limitation of etching aspect ratio and the minimum pitch are explored under the optimized ICP parameters. The experimental results demonstrate that the minimum pitch could be obtained at about 25 μm, equivalent to a pitch of 1.6 λ, with a kerf depth of 16 μm. Focusing Ion Beam (FIB) technique is also studied to etch LiNbO 3 crystals. The aspect ratio is up to as high as 6. A pitch of 0.5 λ can be obtained for a 100 MHz half-kerfed LiNbO 3 array.

关键词： Arrays Lithium niobate Etching Acoustics Iterative closest point algorithm Transducers Nickel

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Ferroelectric phase stabilization within antiferroelectric/dielectric stacking layers

Ferroelectric phase stabilization within antiferroelectric/d...

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12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

作者： Weng, X.D. Jiang, A.Q. ASIC and System State Key Laboratory Department of Microelectronics Fudan University Shanghai 200433 China

The antiferroelectrics is antiparallel orientations of neighboring dipoles accompanying an antiferroelectric-ferroelectric (AFE-FE) transition under a high field. However, the ferroelectric domains are unstable and easily return to the antiferroelectric, once the external field is removed. From our works, the high-field ferroelectric phase is maintained at zero field within antiferroelectric PbZr0.96Ti0.04O3/Al 2O3 stacking layers, where Al2O3 layer is conductive under the high field to permit AFE-to-FE transition but insulating immediately at zero field to block FE-to-AFE transition. This investigation implies the possibility of antiferroelectric materials for the future application of nonvolatile ferroelectric random access memories. © Taylor & Francis Group, LLC.

关键词： Ferroelectricity

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Charge injection controlled capacitance degradation in ferroelectric thin films

Charge injection controlled capacitance degradation in ferro...

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12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

作者： Jiang, A.Q. Tang, T.A. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

The dielectric capacitance of ferroelectric thin films decreases continuously with time above 1 s under the voltage, which is generally explained in terms of defect-related physics. For the better understanding of underlying physics, we delved into the capacitance degradation with time short into a nanosecond order at 77.6 K. The typical feature of the degradation is steplike at around 70 μs. Consequently, we measured the imprint profile in the similar time scale, where the coercive voltage shows a steplike jump at the same time. This suggests the common physics of charge injection responsible for the above two processes.

关键词： Capacitance

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