咨询与建议

限定检索结果

文献类型

  • 633 篇 会议
  • 358 篇 期刊文献

馆藏范围

  • 991 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 695 篇 工学
    • 381 篇 电子科学与技术(可...
    • 233 篇 材料科学与工程(可...
    • 145 篇 计算机科学与技术...
    • 143 篇 电气工程
    • 113 篇 化学工程与技术
    • 72 篇 软件工程
    • 51 篇 信息与通信工程
    • 50 篇 机械工程
    • 50 篇 光学工程
    • 47 篇 仪器科学与技术
    • 46 篇 控制科学与工程
    • 44 篇 冶金工程
    • 39 篇 动力工程及工程热...
    • 21 篇 生物医学工程(可授...
    • 20 篇 力学(可授工学、理...
    • 20 篇 生物工程
    • 10 篇 土木工程
    • 8 篇 建筑学
  • 326 篇 理学
    • 210 篇 物理学
    • 117 篇 化学
    • 79 篇 数学
    • 24 篇 生物学
    • 18 篇 统计学(可授理学、...
    • 17 篇 系统科学
  • 45 篇 管理学
    • 40 篇 管理科学与工程(可...
    • 12 篇 工商管理
  • 17 篇 医学
    • 13 篇 临床医学
    • 12 篇 基础医学(可授医学...
  • 9 篇 经济学
    • 9 篇 应用经济学
  • 5 篇 法学
  • 2 篇 军事学
  • 1 篇 艺术学

主题

  • 33 篇 application spec...
  • 29 篇 microelectronics
  • 29 篇 silicon
  • 24 篇 films
  • 19 篇 annealing
  • 19 篇 field programmab...
  • 17 篇 logic gates
  • 17 篇 electrodes
  • 17 篇 integrated circu...
  • 16 篇 computer archite...
  • 16 篇 clocks
  • 15 篇 circuit simulati...
  • 15 篇 substrates
  • 15 篇 computational mo...
  • 14 篇 switches
  • 14 篇 hardware
  • 13 篇 temperature
  • 13 篇 algorithm design...
  • 13 篇 equations
  • 13 篇 capacitors

机构

  • 169 篇 state key labora...
  • 96 篇 state key labora...
  • 71 篇 state key labora...
  • 26 篇 state key labora...
  • 23 篇 state key lab of...
  • 19 篇 asic and system ...
  • 16 篇 university of ch...
  • 15 篇 fudan university...
  • 13 篇 state key labora...
  • 11 篇 state key labora...
  • 11 篇 asic and system ...
  • 11 篇 fudan university
  • 11 篇 asic & system st...
  • 11 篇 asic & system st...
  • 11 篇 state key labora...
  • 10 篇 department of ma...
  • 10 篇 state key labora...
  • 10 篇 asic and system ...
  • 10 篇 state key labora...
  • 10 篇 state key lab. o...

作者

  • 64 篇 david wei zhang
  • 53 篇 peng zhou
  • 50 篇 xuan zeng
  • 36 篇 dian zhou
  • 33 篇 jia zhou
  • 31 篇 xin-ping qu
  • 26 篇 yu-long jiang
  • 25 篇 guo-ping ru
  • 24 篇 zhang david wei
  • 23 篇 qing-qing sun
  • 23 篇 shi-jin ding
  • 23 篇 zhou jia
  • 22 篇 张卫
  • 22 篇 qu xin-ping
  • 22 篇 junyan ren
  • 21 篇 yiping huang
  • 20 篇 wenzhong bao
  • 19 篇 xiaoyang zeng
  • 18 篇 bing-zong li
  • 16 篇 liu ran

语言

  • 938 篇 英文
  • 27 篇 中文
  • 26 篇 其他
检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"
991 条 记 录,以下是691-700 订阅
排序:
Study of ferroelectic properties in ferroelectric/high-k dielectric bilayers
Study of ferroelectic properties in ferroelectric/high-k die...
收藏 引用
12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18
作者: Ma, Z. Jiang, A.Q. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China
The Ferroelectricity maintained in ultrathin films could suffer from bad polarization retention due to epitaxial stresses and interfacial effects. It makes a great difference to incorporate ultrathin PZT films with a ... 详细信息
来源: 评论
Nickel silicide formation on Si(110) substrate
Nickel silicide formation on Si(110) substrate
收藏 引用
10th International Workshop on Junction Technology, IWJT-2010
作者: Guo, Xiao Wang, Xiao-Rong Jiang, Yu-Long Ru, Guo-Ping Li, Bing-Zong Asic and System State Key Laboratory Department of Microelectronics Fudan University Shanghai 200433 China
Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formati... 详细信息
来源: 评论
Effects of Pb excess and temperature on polarization fatigue in sol-gel derived Pb(Zr0.3Ti0.7)O3 thin films
Effects of Pb excess and temperature on polarization fatigue...
收藏 引用
12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18
作者: Chen, Z.H. Jiang, A.Q. ASIC and System State Key Laboratory Department of Microelectronics Fudan University Shanghai 200433 China
The effect of Pb excess on the crystallization and ferroelectric property in Pb(Zr0.3Ti0.7)O3 (PZT) thin films has been investigated. The Pb loss due to atomic interdiffusion and volatilization during thermal annealin... 详细信息
来源: 评论
A proposal of trapezoid mesa trench MOS barrier schottky rectifier
A proposal of trapezoid mesa trench MOS barrier schottky rec...
收藏 引用
2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology
作者: Li, Weiyi Ru, Guo-Ping Jiang, Yu-Long Ruan, Gang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China
We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I-V characteristics, incl... 详细信息
来源: 评论
Medical image registration based on SIFT and edge points matching
收藏 引用
Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument 2011年 第12 SUPPL.期32卷 147-150页
作者: Wang, Shanyi Ma, Yu Wang, Yuanyuan State Key Laboratory of ASIC and System Fudan University Shanghai 200433 China Department of Electronic Engineering Fudan University Shanghai 200433 China
A medical image registration method is proposed by using Scale Invariant Feature Transform (SIFT) algorithm and edge points matching. First, the corresponding feature point pairs between the reference image and the fl... 详细信息
来源: 评论
Effect of rapid thermal annealing on the optical properties of Nb 2O5-Al2O3 nanolaminate films
Effect of rapid thermal annealing on the optical properties ...
收藏 引用
2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology
作者: Huang, Yue Xu, Yan Lu, Hong-Liang Sun, Qing-Qing Ding, Shi-Jin Zhang, Wei State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China
Nb2O5-Al2O3 nanolaminate films have been grown by atomic layer deposition using (Nb(OC2H 5)5)/H2O, and Al(CH3) 3/H2O precursors, respectively. Effect of rapid thermal annealing (RTA) on the optical properties of the n... 详细信息
来源: 评论
Electrical and testing reliability of CuxO based RRAM
Electrical and testing reliability of CuxO based RRAM
收藏 引用
2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology
作者: Wan, Haijun Tian, Xiaopeng Song, Yali Luo, Wenjin Wang, Ming Wang, Yanliang Zhou, Peng Lin, Yinyin ASIC and System State Key Laboratory School of Microelectronics Fudan University Shanghai 200433 China
This work studies the electrical and testing reliability issues of Cu xO based RRAM (Resistive Random Access Memory). Firstly, we study the most important electrical reliability issue-data retention capability, and pr... 详细信息
来源: 评论
An analytical model for the subthreshold swing of double-gate MOSFETs
An analytical model for the subthreshold swing of double-gat...
收藏 引用
10th International Workshop on Junction Technology, IWJT-2010
作者: Ding, Zhihao Hu, Guangxi Gu, Jinglun Liu, Ran Wang, Lingli Tang, Tingao State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China
A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results... 详细信息
来源: 评论
The effects of pb excess and frequency on polarization-voltage hysteresis loops in Pb(Zr0.3Ti0.7)O3 thin films
The effects of pb excess and frequency on polarization-volta...
收藏 引用
作者: Chen, Z.H. Jiang, A.Q. Tang, T.A. ASIC and System State Key Laboratory Department of Microelectronics Fudan University Shanghai 200433 China
The effect of Pb excess on the crystallization and ferroelectric properties in Pb(Zr0.3Ti0.7)O3 (PZT) thin films has been investigated. Owning to atomic interdiffusion and volatilization during heat treatment, the Pb ... 详细信息
来源: 评论
A novel disk-arc arrayed electrochemical sensor
A novel disk-arc arrayed electrochemical sensor
收藏 引用
IEEE International Conference on Nano/Micro Engineered and Molecular systems
作者: Chai, Xiaosen Xu, Chun Zhou, Jia ASIC and System State Key Lab. Department of Microelectronics Fudan University China
In this paper, a novel-structured electrochemical sensor array with five disk working electrodes, one arc counter electrode and one reference electrode is introduced. The array is fabricated by micro-electro-mechanica... 详细信息
来源: 评论