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检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"

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A noise-shaped buck DC-DC converter based on a 3rd-order continuous-time active-passive sigma-delta modulator

A noise-shaped buck DC-DC converter based on a 3rd-order con...

引用

2010 IEEE 12th Workshop on Control and Modeling for Power Electronics, COMPEL 2010

作者： Yan, Wei Li, Wenhong Liu, Ran State Key Laboratory of ASIC and Systems Department of Microelectronics Fudan University China

ISBN: (纸本)9781424474639

A noise-shaped synchronous buck converter using a 3rd-order continuous-time (CT) active-passive sigma-delta modulator (SDM) is presented. Detailed system modeling and loop design methodology for the SDM based DC-DC are discussed. The proposed circuit has been designed with Chartered 0.35 μm CMOS process. The system operates with a clock of 8 MHz. Compared with the traditional PWM mode converter, simulation results show that the proposed converter suppresses the switching tones by more than 25 dB over a wide frequency range with a peak efficiency of 96%.

关键词： Delta sigma modulation

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Investigation of Co/TaN bilayer as Cu diffusion barrier

Investigation of Co/TaN bilayer as Cu diffusion barrier

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Lu, Hai-Sheng Ding, Shao-Feng Ru, Guo-Ping Jiang, Yu-Long Qu, Xin-Ping State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration was observed after annealing at 500°C for 30 min. Results show that Co/TaN has a good potential as cost effective adhesion/diffusion stack in copper metallization. ©2010 IEEE.

关键词： X ray diffraction

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Fabrication and analysis of super-hydrophobic ZnO film for microfluidic devices

Fabrication and analysis of super-hydrophobic ZnO film for m...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Yang, Sheng Wang, Yiting Zeng, Xiangyu Zhou, Jia ASIC and System State Key Lab. Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

A simple method of electrochemical deposition was adopted to fabricate super-hydrophobic ZnO surface. A contact angle for water of 159.9° was achieved through teflon 1600 modification. The impacts of deposit time and operating voltage on the hydrophobic characteristics and the capacitance characteristics of ZnO layer were also analyzed. ©2010 IEEE.

关键词： Electrochemical deposition

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Characterization of ultra-low k porous organosilica thin films

Characterization of ultra-low k porous organosilica thin fil...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Fu, Shuang Qian, Ke-Jia Ding, Shi-Jin Zhang, Wei Fan, Zhong-Yong Department of Material Science Fudan University Shanghai 200433 China State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

Porous organosilica thin films using 1,2-bis(triethoxysily)ethane, triethoxymethylsilane and a poly (ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock copolymer template have been prepared by spin-on technique. The films were characterized by cross-sectional scanning electron microscopy, x-ray diffraction and Fourier-transform infrared spectroscopy. After thermal treatment at 350 °C in N2 for two hours, the films show well ordered porous structure as well as uniform and crack-free surface. The dielectric constant (k) as low as 2.0 was obtained at 100k Hz, and kept good thermal stability up to 500 °C. Meanwhile, the resulting low-k porous films also exhibit low leakage current densities, e.g., 3.0×10-8 A/cm2 at 1 MV/cm, and good mechanical properties with elastic modulus of 4.7 GPa and hardness of 0.56 GPa in the case of 500 °C annealing. ©2010 IEEE.

关键词： Thin films

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Tunable photonic crystals based on photoinduced deformations of crosslinked liquid-crystalline polymers

Tunable photonic crystals based on photoinduced deformations...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Zhao, Xin Ji, Xinming Wei, Wu Yu, Yanlei Cheng, Futao Bao, ZongMing Huang, Yiping State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Materials Science Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

A novel tunable three-dimensional (3D) photonic crystals is demonstrated based on the photoinduced deformation of the azobenzene crosslinked liquid-crystalline polymers(CLCPs). A nanoimprinting approach is utilized to create a robust CLCPs 3D photonic crystal structure. The dynamical modulated performance of the photonic crystals induced by ultraviolet and visible are measured and analyzed. It is shown that the tunable photonic crystals is reversible and stable. ©2010 IEEE.

关键词： Photonic crystals

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Charging characteristics of Sb nanocrystals embedded in copper phthalocyanine films for memory applications

Charging characteristics of Sb nanocrystals embedded in copp...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Huang, Yue Ding, Shi-Jin Zahn, Dietrich R. T. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Semiconductor Physics Chemnitz University of Technology Chemnitz 097107 Germany

ISBN: (纸本)9781424457984

The charging characteristics of Sb nanocrystals embedded in organic semiconductor copper phthalocyanine (CuPc) have been studied for the first time. The images from atomic force microscopy show that Sb NCs grown on the surface of CuPc film exhibit a vertical height of 10-15 nm and uniform distribution, which are interspersed with a few bigger ones (∼30 nm). Two kinds of capacitance-voltage measurements, frequency responds and hysteresis loops, of the control sample and the one embedded with Sb NCs indicate the charging and discharging of the Sb NCs. ©2010 IEEE.

关键词： Nanocrystals

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Hot carrier stress induced negative differential resistance in the output characteristic of poly-Si TFTs

Hot carrier stress induced negative differential resistance ...

引用

17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010

作者： Hu, Chunfeng Wang, Mingxiang Xu, Meijuan Dept. of Microelectronics Soochow University Suzhou 215006 China State Key Laboratory of ASIC and System Dept. of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424455973

Hot carrier (HC) stress induced negative differential resistance (NDR) behavior in the reserve mode output characteristics of n-type poly-Si TFTs is first observed. The NDR phenomenon, i.e., ION decreases with increasing VD is also found to increase at higher VG but disappear when VGVTH and is reduced as stress time increases. Based on drain induced grain barrier lowering and thermionic emission controlled carrier conduction relating to the HC induced trap potential barrier, the NDR phenomenon can be understood. © 2010 IEEE.

关键词： Thermionic emission

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Narrow-band Midinfrared Thermal Emitter Based on Photonic Crystal for NDIR Gas Sensor

Narrow-band Midinfrared Thermal Emitter Based on Photonic Cr...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Yiping Huang Xin Zhao Peng Jing Xinming Ji Fang Xing The State Key Laboratory of ASIC &System Department of Microelectronics Fudan University Shanghai The State Key Laboratory of ASIC &System Department of Microelectronics Fudan University Shanghai

ISBN: (纸本)9781424457977

A high performance plasmonic thermal emitter with narrow bandwidth emission property were proposed and fabricated. This emitter is based on a metal coated two-dimensional (2D) photonic crystal of air holes in a silicon substrate. The PC structure is found to be highly effective in suppressing the thermal emission, which can yield 2 orders of magnitude more efficient that conventional IR sources. Thermally isolated, uniformly heated emitters, with photonic crystal structure modified surfaces are exploited for narrowband spectral tuning in the infrared wavelength regime. The results show that narrow band spectral tuning is accomplished through control of the lattice constant of the PC patterns.

关键词： emitters Lattice constants Narrowband Photonic crystals photonic airhole crystals INFRARED SOURCES crystal structure

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Preparation and characterization of low-dielectric-constant F-doped SiOCN films by PECVD

Preparation and characterization of low-dielectric-constant ...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Ke-Jia Qian Wei Zhang Shi-Jin Ding Qing-Qing Sun State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai

F-doped SiOCN films with low dielectric constant have been prepared using SiH_4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I-V) measurements, and nanoindenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C2F6 is 750 sccm, the percentages of C and F elements amount to 5.2％ and 9.9％, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than 3×10-8 A/cm2 at lMV/cm. The hardness and Young's modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film.

关键词： Films Dielectric constant Leakage current Mechanical factors Thermal stability Dielectric measurements

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Fabrication and Characterization of Half-kerfed LiNbO_3-based High-frequency (>100MHz) Ultrasonic Array Transducers

Fabrication and Characterization of Half-kerfed LiNbO_3-base...

引用

2011 IEEE Ultrasonics Symposium (IUS 2011)

作者： J. Y. Zhang W. J. Xu J. Carlier X. M. Ji B. Nongaillard S. Queste J. Zhou Y. P. Huang Departement Opto-Acousto-Electronique I.E.M.N. UMR CNRS 8520 Universite de Valenciennes Mont Houy BP311 59313 Valenciennes France ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 P. R. China Institut FEMTO-ST CNRS UMR 6174 Universite de Franche-Comte 25044 Besancon France

ISBN: (纸本)9781457712531

The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore, Inductively Coupled Plasma (ICP) deep etching process is used to etch 36°/Y-cut lithium niobate (LiNbO_3) crystals and the limitation of etching aspect ratio is studied. Several arrays with different profiles are realized under optimized processes. At last, arrays with different pitches are fabricated and characterized by a network analyzer.

关键词： Arrays Lithium niobate Acoustics Crosstalk Focusing Etching Finite element methods

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