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检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"

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Charging characteristics of Sb nanocrystals embedded in copper phthalocyanine films for memory applications

Charging characteristics of Sb nanocrystals embedded in copp...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Huang, Yue Ding, Shi-Jin Zahn, Dietrich R. T. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Semiconductor Physics Chemnitz University of Technology Chemnitz 097107 Germany

ISBN: (纸本)9781424457984

The charging characteristics of Sb nanocrystals embedded in organic semiconductor copper phthalocyanine (CuPc) have been studied for the first time. The images from atomic force microscopy show that Sb NCs grown on the surface of CuPc film exhibit a vertical height of 10-15 nm and uniform distribution, which are interspersed with a few bigger ones (∼30 nm). Two kinds of capacitance-voltage measurements, frequency responds and hysteresis loops, of the control sample and the one embedded with Sb NCs indicate the charging and discharging of the Sb NCs. ©2010 IEEE.

关键词： Nanocrystals

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Hot carrier stress induced negative differential resistance in the output characteristic of poly-Si TFTs

Hot carrier stress induced negative differential resistance ...

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17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010

作者： Hu, Chunfeng Wang, Mingxiang Xu, Meijuan Dept. of Microelectronics Soochow University Suzhou 215006 China State Key Laboratory of ASIC and System Dept. of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424455973

Hot carrier (HC) stress induced negative differential resistance (NDR) behavior in the reserve mode output characteristics of n-type poly-Si TFTs is first observed. The NDR phenomenon, i.e., ION decreases with increasing VD is also found to increase at higher VG but disappear when VGVTH and is reduced as stress time increases. Based on drain induced grain barrier lowering and thermionic emission controlled carrier conduction relating to the HC induced trap potential barrier, the NDR phenomenon can be understood. © 2010 IEEE.

关键词： Thermionic emission

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Preparation and characterization of low-dielectric-constant F-doped SiOCN films by PECVD

Preparation and characterization of low-dielectric-constant ...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Ke-Jia Qian Wei Zhang Shi-Jin Ding Qing-Qing Sun State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai

F-doped SiOCN films with low dielectric constant have been prepared using SiH_4, C2F6 and N2O as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I-V) measurements, and nanoindenter. With an increment of the flow rate of C2F6, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C2F6 is 750 sccm, the percentages of C and F elements amount to 5.2％ and 9.9％, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than 3×10-8 A/cm2 at lMV/cm. The hardness and Young's modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film.

关键词： Films Dielectric constant Leakage current Mechanical factors Thermal stability Dielectric measurements

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Narrow-band Midinfrared Thermal Emitter Based on Photonic Crystal for NDIR Gas Sensor

Narrow-band Midinfrared Thermal Emitter Based on Photonic Cr...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Yiping Huang Xin Zhao Peng Jing Xinming Ji Fang Xing The State Key Laboratory of ASIC &System Department of Microelectronics Fudan University Shanghai The State Key Laboratory of ASIC &System Department of Microelectronics Fudan University Shanghai

ISBN: (纸本)9781424457977

A high performance plasmonic thermal emitter with narrow bandwidth emission property were proposed and fabricated. This emitter is based on a metal coated two-dimensional (2D) photonic crystal of air holes in a silicon substrate. The PC structure is found to be highly effective in suppressing the thermal emission, which can yield 2 orders of magnitude more efficient that conventional IR sources. Thermally isolated, uniformly heated emitters, with photonic crystal structure modified surfaces are exploited for narrowband spectral tuning in the infrared wavelength regime. The results show that narrow band spectral tuning is accomplished through control of the lattice constant of the PC patterns.

关键词： emitters Lattice constants Narrowband Photonic crystals photonic airhole crystals INFRARED SOURCES crystal structure

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Improved barrier properties of Ru/TaSiN stack on NiSi/Si for copper contact technology

Improved barrier properties of Ru/TaSiN stack on NiSi/Si for...

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Advanced Metallization Conference 2010

作者： Qu, Xin-Ping Zhao, Ying Xie, Qi Zhang, Xiao-Meng Detavernier, Christophe State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai China Department of Solid State Science Gent University Gent Belgium

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Fabrication and Characterization of Half-kerfed LiNbO_3-based High-frequency (>100MHz) Ultrasonic Array Transducers

Fabrication and Characterization of Half-kerfed LiNbO_3-base...

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2011 IEEE Ultrasonics Symposium (IUS 2011)

作者： J. Y. Zhang W. J. Xu J. Carlier X. M. Ji B. Nongaillard S. Queste J. Zhou Y. P. Huang Departement Opto-Acousto-Electronique I.E.M.N. UMR CNRS 8520 Universite de Valenciennes Mont Houy BP311 59313 Valenciennes France ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 P. R. China Institut FEMTO-ST CNRS UMR 6174 Universite de Franche-Comte 25044 Besancon France

ISBN: (纸本)9781457712531

The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore, Inductively Coupled Plasma (ICP) deep etching process is used to etch 36°/Y-cut lithium niobate (LiNbO_3) crystals and the limitation of etching aspect ratio is studied. Several arrays with different profiles are realized under optimized processes. At last, arrays with different pitches are fabricated and characterized by a network analyzer.

关键词： Arrays Lithium niobate Acoustics Crosstalk Focusing Etching Finite element methods

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Effect of array periodicity on filtering characteristic for metal/dielectric photonic crystal

Effect of array periodicity on filtering characteristic for ...

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systems Integration 2010 - 4th European Conference and Exhibition on Integration Issues of Miniaturized systems - MEMS, MOEMS, ICs and Electronic Components

作者： Xiao, Gongli Bao, Zongming Huang, Yiping State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Information and Communications College Guilin University of Electronic Technology Guilin 541004 China

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Immunosensor for detecting pulmonary tuberculosis markers in human serum

Immunosensor for detecting pulmonary tuberculosis markers in...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Xu, Chun Chai, Xiao-Sen Zhang, Shu-Lin Zhou, Jia ASIC and System State Key Lab. Department of Microelectronics Fudan University Shanghai 200433 China State Key Laboratory of Genetic Engineering Fudan University No. 220 Handan Road 200433 Shanghai China

ISBN: (纸本)9781424457984

A specific and high-sensitive immunosensor for detecting pulmonary tuberculosis (TB) markers in human serum is presented by miniaturizing array of microelectrodes via micro electro-mechanical system (MEMS) for multi-channel electrochemical measurement. The immunosensor is consisted of six Au disk working electrodes, one Au counter electrode and one Ag/AgCl reference electrode. Semi-insulating poly(o-phenylenediamine)(PoPD) film was utilized to co-polymerize and immobilize antigen at the arrayed Au electrodes. The selective recognition of antibody to the corresponding antigen is quantitatively detected by the peak current in the presence of the redox probe, FcCH 2OH(FcM). Samples with antibody positive and antibody negative can be distinguished. ©2010 IEEE.

关键词： Antibodies

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Effect of temperature on GaAs surface self-cleaning using dimethylaluminumhydride

Effect of temperature on GaAs surface self-cleaning using di...

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第18届国际真空大会

作者： David Wei Zhang State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

Further scaling of complementary metal-oxide-semiconductor （CMOS） technology in accordance with Moore’s law will require various novel materials such as high-k dielectrics, metal gates, and high-mobility channels. III-V compound semiconductors such as GaAs and InGaAs have attracted renewed attention for high-speed MOS field-effect transistors （MOSFETs） due to their higher carrier mobility compared with that of Si. However, the performance of GaAs-based MOSFETs is often limited by the high density of interfacial trap states （Dit）, which lead to the surface Fermi level pinning at the midgap. It is reported that the Fermi level is pinned by defect levels induced by surface species such as As-O bonds, Ga-O bonds, elemental As, and Ga or As antisites in the GaAs near-surface region. Consequently, there is a great need to develop an efficient GaAs surface passivation technique and a thermally stable dielectric/GaAs interface. For Al2O3 films grown by atomic layer deposition using trimethylaluminum （TMA）, a self-cleaning effect on the reduction of the surface oxides was reported. We also have demonstrated a new self-cleaning process for GaAs surface passivation based on dimethylaluminum （DMAH） and investigated the DMAH pretreatment time to influence the interface quality recently. It is still of interest to characterize the effect of pretreatment temperature on the extent of interface reaction. In this work, the evolution of interface between aluminum oxide and GaAs as a function of the DMAH pretreatment temperature is studied by using x-ray photoelectron spectroscopy （XPS） and atomic force microscopy （AFM）.

关键词： GaAs DMAH Self-cleaning

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A novel disk-arc arrayed electrochemical sensor

A novel disk-arc arrayed electrochemical sensor

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IEEE International Conference on Nano/Micro Engineered and Molecular systems (NEMS)

作者： Xiaosen Chai Chun Xu Jia Zhou ASIC and System State Key Laboratory Department of Microelectronics Fudan University China

In this paper, a novel-structured electrochemical sensor array with five disk working electrodes, one arc counter electrode and one reference electrode is introduced. The array is fabricated by micro-electro-mechanical system (MEMS) technology. The radii of the disk working electrodes are 400 μm and 500 μm while the distance between the working electrodes and counting electrode is 100 μm. The counter electrode is composed of difference arc rings. The radian of the arc rings ranges from n to μm while the radius ranges from 100 μm to μm for different chips. The arrays are characterized by cyclic voltammetry in the presence of the redox probe ferrocenemethanol (FcM). It is found that the peak current has a biggest value between 3π/2 and 5π/3 at the same radius of arc rings. The peak current increases along with the increasing of the radius of the arc rings. For working electrode in same size, the best design has the peak current 35% higher than the smallest peak current. An optimal design of the high sensitivity electrochemical sensor is found.

关键词： Electrodes Radiation detectors Arrays system-on-a-chip Gold Semiconductor device measurement Micromechanical devices

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