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检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"

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Effect of rapid thermal annealing on the optical properties of Nb2O5-Al2O3 nanolaminate films

Effect of rapid thermal annealing on the optical properties ...

引用

2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Wei Zhang Yan Xu Shi-Jin Ding Yue Huang Hong-Liang Lu Qing-Qing Sun State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 2004 State Key Laboratory of ASIC and System School of Microelectronics Fudan UniversityShanghai 20043

ISBN: (纸本)9781424457977

Nb2O5-Al2O3 nanolaminate films have been grown by atomic layer deposition using (Nb(OC2H5)5)/H2O, and Al(CH3)3/H2O precursors, respectively. Effect of rapid thermal annealing (RTA) on the optical properties of the nanolaminate has been studied using Fourier transform infrared spectroscopy (FTIR), and spectroscopic ellipsometry. From the FTIR result, Al2O3 suppresses the formation of interfacial layer during RTA. The refractive index of the ND2O5-Al2O3 films is found to increase after the RTA at 500 ℃, while decrease with the RTA temperature above 500 ℃. Moreover, the optical band gap of Nb2O5 film deduced from the extinction coefficient shows a gradual increase with increasing annealing temperature, which is related to a decrease in the film disorder.

关键词： Rapid thermal annealing Fourier transform infrared spectroscopy Renal Tubular Acidosis Optical properties Films extinction coefficients interface layer atomic layer deposition annealing

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Nickel silicide formation on Si(110) substrate

Nickel silicide formation on Si(110) substrate

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International Workshop on Junction Technology

作者： Xiao Guo Xiao-Rong Wang Yu-Long Jiang Guo-Ping Ru Bing-Zong Li Asic and System State Key Laboratory Department of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424458660;9781424458691

Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical characteristics evaluation. The formation kinetics for nickel silicidation on Si(110) substrates was also discussed in this paper.

关键词： Nickel Silicides Atomic force microscopy Annealing Temperature X-ray diffraction Schottky barriers Electric variables Kinetic theory Silicidation

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An improved design of Si PNIN tunneling field effect transistor

An improved design of Si PNIN tunneling field effect transis...

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International Conference on Solid-state and Integrated Circuit Technology

作者： W. Cao C. J. Yao D. M. Huang M.-F. Li State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424457977

PIN tunneling field effect transistor (TFET) is one of the most promising devices due to its low sub-threshold swing. In this paper, using TCAD simulation, we investigate the doping and structure dependence of the electric field in PIN TFET. We show that an insertion of a thin N layer into PIN structure (i.e., PNIN TFET) not only enhances the drive current but also improves the reliability of the device. We also show that the device characteristics can be further improved by properly aligning the gate electrodes with respect to the tunneling junction.

关键词： Tunneling Electric fields Logic gates Doping Reliability Junctions Semiconductor process modeling

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A Proposal of Trapezoid Mesa Trench MOS Barrier Schottky Rectifier

A Proposal of Trapezoid Mesa Trench MOS Barrier Schottky Rec...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Weiyi Li Guo-Ping Ru Yu-Long Jiang Gang Ruan State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457977

We propose a new structure of Schottky rectifier, named trapezoid mesa trench MOS barrier Schottky rectifier (TM-TMBS). By 2D numerical simulations, both forward and especially better reverse I-V characteristics, including higher breakdown voltage and lower leakage current, were demonstrated and explained comparing to regular TMBS as well as conventional planar Schottky rectifier.

关键词： Rectifiers Leakage current Electric fields Software Schottky barriers Power semiconductor devices Proposals

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22nm技术节点异质栅MOSFETs的特性研究

22nm技术节点异质栅MOSFETs的特性研究

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2011’全国半导体器件产业发展、创新产品和新技术研讨会

作者： Yang Yinglin 杨颖琳 Hu Cheng 胡成 Zhu Lun 朱伦 Xu Peng 许鹏 Zhu Zhiwei 朱志炜 Zhang Wei 张卫 Wu Dongping 吴东平 State Key Laboratory of ASIC and System Dept.of MicroelectronicsFudan UniversityShanghai 200433Ch 复旦大学微电子学系专用集成电路与系统国家重点实验室上海200433

本文主要研究了22nm栅长的异质栅结构MOSFETs的特性,利用工艺与器件仿真软件Silvaco,模拟了异质栅MOSFETs的阈值电压、亚阈值特性、沟道表面电场及表面势等特性,并与传统的同质栅MOSFETs进行比较。分析结果表明,由于异质栅MOSFETs的栅... 详细信息

本文主要研究了22nm栅长的异质栅结构MOSFETs的特性,利用工艺与器件仿真软件Silvaco,模拟了异质栅MOSFETs的阈值电压、亚阈值特性、沟道表面电场及表面势等特性,并与传统的同质栅MOSFETs进行比较。分析结果表明,由于异质栅MOSFETs的栅极由两种不同功函数的材料组成,因而在两种材料界面附近的表面沟道中增加了一个电场峰值,相应地漏端电场比同质栅MOSFETs有所降低,所以在提高沟道载流子的输运效率的同时也降低了小尺寸器件的热载流子效应。此外,由于该器件靠近源极的区域对于漏压的变化具有屏蔽作用,从而有效抑制了小尺寸器件的沟道长度调制效应,但是由于其亚阈值特性与同质栅MOSFETs相比较差,导致漏致势垒降低效应(DIBL)没有明显改善。

关键词：金属氧化物半导体器件异质栅结构性能评价模拟分析

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Peripheral domain switching and fatigue-resistive readout of ferroelectric random access memories

Peripheral domain switching and fatigue-resistive readout of...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： An-Quan Jiang Ting-Ao Tang State Key Laboratory of ASIC & System Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457977

For the integration of high-density ferroelectric random access memories, each memory cell can be formed at the cross point of a plate line and a common node electrode, where the ferroelectric film is continuous between them. However, the peripheral region beyond the cross point of each cell without electrode coverage could also switch under the writing/reading pulse. To avoid this crosstalk problem between adjacent memory cells, the safest distance between the cells is estimated to be 0.270.34 μm for Pb(Zr,Ti)O3 thin-film capacitors from short pulse measurements. With the shortening of the repetitive reading/wiring pulse width down to domain switching time, the capacitor with Pt electrodes is rather fatigue resistive.

关键词： crossing point random access machine immunocytes Domain switching thin film capacitors readout PULSE WIDTH Electrodes Cells

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Investigation of tunneling field effect transistor reliability

Investigation of tunneling field effect transistor reliabili...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Jiao, G.F. Huang, X.Y. Chen, Z.X. Cao, W. Huang, D.M. Yu, H.Y. Singh, N. Lo, G.Q. Kwong, D.-L. Li, Ming-Fu State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Singapore 117685 Singapore School of EEE Nanyang Technological University Singapore 639798 Singapore

ISBN: (纸本)9781424457984

This paper summarizes our recent investigations of nano-wire n type tunneling field effect transistor (n-TFET) reliability by experimental measurements and physical analysis [1-3]. Large PBTI and HC degradations which are very different from those in conventional n-MOSFETs were observed. The results are interpreted by different degradation mechanism in TFET. ©2010 IEEE.

关键词： Degradation

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Thermal stability of ultrathin RuC film as Cu diffusion barrier

Thermal stability of ultrathin RuC film as Cu diffusion barr...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Ding, Shao-Feng Xie, Qi Detavernier, Christophe Qu, Xin-Ping State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Solid State Science Ghent University Krijgslaan 281/S1 B-9000 Ghent Belgium

ISBN: (纸本)9781424457984

The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization. ©2010 IEEE.

关键词： Tantalum compounds

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Work function modulation for TiN/Ta/TiN metal gate electrode

Work function modulation for TiN/Ta/TiN metal gate electrode

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Wang, Xiao-Rong Jiang, Yu-Long Xie, Qi Detavernier, Christophe Ru, Guo-Ping Qu, Xin-Ping Li, Bing-Zong State Key Lab. of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Solid State Science Ghent University Krijgslaan 281/S1 B-9000 Ghent Belgium

ISBN: (纸本)9781424457984

In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO2/p-Si(100) structure was investigated. Comparing with TiN/SiO2/p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat band voltage obviously shifts toward the negative bias direction, the extracted EWF does not vary too much. An EWF of 4.4 eV is confirmed for TiN/Ta/TiN/SiO2/p-Si(100) structure by C-V measurements, which is almost identical to Al/TiN metal gate electrode. ©2010 IEEE.

关键词： Silicon compounds

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An analytical model for the subthreshold swing of double-gate MOSFETs

An analytical model for the subthreshold swing of double-gat...

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International Workshop on Junction Technology

作者： Zhihao Ding Guangxi Hu Jinglun Gu Ran Liu Lingli Wang Tingao Tang State Key Laboratory of ASIC & System School of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424458660;9781424458691

A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing the channel length, by reducing either the silicon body thickness or the gate oxide thickness, and by increasing the silicon body doping concentration.

关键词： Analytical models Silicon Voltage MOSFET circuits Poisson equations Electric potential Doping CMOS technology Permittivity Boundary conditions

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