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Applications of tunneling FET in memory devices

Applications of tunneling FET in memory devices

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Zang, Song-Gan Liu, Xin-Yan Lin, Xi Liu, Lei Liu, Wei Zhang, David Wei Wang, Peng-Fei Hansch, Walter State Key Laboratory of ASIC and System Dept. of Microelectronics Fudan University Shanghai China Oriental Semiconductor Co. Ltd. Suzhou China Institute for Physics Universitaet der Bundeswehr Munich 85577 Neubiberg Germany

ISBN: (纸本)9781424457984

Because of the special p-i-n structure of the tunneling FET (TFET), many different composite transistors can be formed with careful device design by combining TFET with MOSFET. In this paper, we propose the special applications of TFET as memory devices. A novel capacitor-less DRAM cell based on floating junction gate (FJG) concept can be configured with TFET. In addition, several different memory cells containing TFET will be discussed. ©2010 IEEE.

关键词： Dynamic random access storage

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The EL properties of well-aligned n-ZnO nanorods / p-GaN structure

The EL properties of well-aligned n-ZnO nanorods / p-GaN str...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Liu, Shu-Yi Wu, Jia-Hong Li, Shu-Ti Chen, Tao Deng, Shao-Ren Jiang, Yu-Long Ru, Guo-Ping Qu, Xin-Ping State Key Laboratory of ASIC and Systems Department of Microelectronics Fudan University Shanghai 200433 China Institute of Opto-Electronic Materials and Technology South China Normal University Guangzhou 510631 China

ISBN: (纸本)9781424457984

Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I-V characteristic results show that the nanosized junction can increase the carrier injection efficiency of the n-ZnO nanorods/p-GaN LED device. ©2010 IEEE.

关键词： Zinc oxide

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An efficient transistor-level piecewise-linear macromodeling approach for model order reduction of nonlinear circuits 10

An efficient transistor-level piecewise-linear macromodeling...

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Design, Automation and Test in Europe Conference and Exhibition

作者： Xiaoda Pan Fan Yang Xuan Zeng Yangfeng Su State Key Laboratory of ASIC & System Microelectronics Department Fudan University China School of Mathematical Sciences Fudan University China

ISBN: (纸本)9783981080162

Trajectory piecewise-linear macromodeling (TPWL) technique has been widely employed to characterize strong nonlinear circuits, and makes the reduction of the strong nonlinear circuits possible. The trajectory piecewise-linear macromodeling technique linearizes nonlinear circuits around multiple expansion points which are extracted from state trajectories driven by training inputs. However, the accuracy of the trajectory piecewise-linear macromodeling technique heavily relies on the extracted expansion points and the training inputs. It will lead to large error in simulation if state vector reaches regions far away from the extracted expansion points. In this paper, we propose an efficient transistor-level piecewise linearization scheme for macromodeling of nonlinear circuits. Piecewise linear models are first built for each transistor. The macromodel of the whole nonlinear circuit is then constructed by combining all the piecewise-linear models of the transistors together with appropriate weight functions. The proposed approach can cover remarkably larger state space than the TPWL method. By using the complete piecewise-linear models of the transistors, the constructed piecewise-linear models of the nonlinear circuits are capable of covering the whole state space of the nonlinear circuits. More importantly, model order reduction of the proposed transistor-level piecewise linearization macromodel is also possible, which makes the proposed method a potentially good macromodeling approach for model order reduction of nonlinear circuits.

关键词： Piecewise linear techniques Nonlinear circuits Nonlinear systems Piecewise linear approximation state-space methods Polynomials Circuit simulation Reduced order systems Trajectory Educational technology

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A noise-shaped buck DC-DC converter based on a 3rd-order continuous-time active-passive sigma-delta modulator

A noise-shaped buck DC-DC converter based on a 3rd-order con...

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IEEE Workshop on Computers in Power Electronics

作者： Wei Yan Wenhong Li Ran Liu State Key Laboratory of ASIC & Systems Department of Microelectronics Fudan University China

A noise-shaped synchronous buck converter using a 3 rd -order continuous-time (CT) active-passive sigma-delta modulator (SDM) is presented. Detailed system modeling and loop design methodology for the SDM based DC-DC are discussed. The proposed circuit has been designed with Chartered 0.35 μm CMOS process. The system operates with a clock of 8 MHz. Compared with the traditional PWM mode converter, simulation results show that the proposed converter suppresses the switching tones by more than 25 dB over a wide frequency range with a peak efficiency of 96%.

关键词： Transfer functions Converters Pulse width modulation Switches Clocks Frequency modulation

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Fabrication and Analysis of Super-hydrophobic ZnO film for microfluidic devices

Fabrication and Analysis of Super-hydrophobic ZnO film for m...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Sheng Yang Yiting Wang Xiangyu Zeng Jia Zhou ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457977

A simple method of electrochemical deposition was adopted to fabricate super-hydrophobic ZnO surface. A contact angle for water of 159.9° was achieved through teflon 1600 modification. The impacts of deposit time and operating voltage on the hydrophobic characteristics and the capacitance characteristics of ZnO layer were also analyzed.

关键词： Zinc oxide Surface treatment Surface topography Microfluidics Films Surface impedance Surface roughness

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Design and simulation of high-frequency (>100 MHz) ultrasonic phased array transducer

Design and simulation of high-frequency (>100 MHz) ultrasoni...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology

作者： Zhang, Jin-Ying Xu, Wei-Jiang Ji, Xin-Ming Carlier, Julien Nongaillard, Bertrand Huang, Yi-Ping Département d'Opto-Acousto-Electronique CNRS UMR 8520 Université de Valenciennes 59313 Valenciennes France ASIC and System State Key Lab. Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457984

This paper presents a theoretical study on the possible realization of high frequency ultrasonic phased array transducer (f>100 MHz) using MEMS technologies. A silicon based lithium niobate (LiNbO3) single crystal linear array is considered. Finite element method is employed for the simulation optimization design of such device. Continuous wave beam steering, focusing under different array and matching conditions are simulated and the beam performance is analyzed. The inter-element cross-talking and the element electrical impedance are also calculated. ©2010 IEEE.

关键词： Niobium compounds

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Investigation of Co/TaN bilayer as Cu diffusion barrier

Investigation of Co/TaN bilayer as Cu diffusion barrier

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Hai-Sheng Lu Shao-Fcng Ding Guo-Ping Ru Yu-Long Jiang Xin-Ping Qu State key lab of ASIC and system Department of microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)9781424457977

The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration was observed after annealing at 500℃ for 30 min. Results show that Co/TaN has a good potential as cost effective adhesion/diffusion stack in copper metallization.

关键词： Copper Annealing Silicon Resistance Adhesives X-ray scattering Temperature measurement

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Work function modulation for TiN/Ta/TiN metal gate electrode

Work function modulation for TiN/Ta/TiN metal gate electrode

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International Conference on Solid-state and Integrated Circuit Technology

作者： Xiao-Rong Wang Yu-Long Jiang Qi Xie Christophe Detavernier Guo-Ping Ru Xin-Ping Qu Bing-Zong Li State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China Department of Solid State Science Ghent University Ghent Belgium

ISBN: (纸本)9781424457977

In this work, the metal gate effective work function (EWF) modulation for the TiN/Ta/TiN/SiO 2 /p-Si(100) structure was investigated. Comparing with TiN/SiO 2 /p-Si(100) structure, after annealing the introduction of Ta can effectively reduce the flat band voltage. It is also revealed that although as the thermal budget increases the flat band voltage obviously shifts toward the negative bias direction, the extracted EWF does not vary too much. An EWF of 4.4 eV is confirmed for TiN/Ta/TiN/SiO 2 /p-Si(100) structure by C-V measurements, which is almost identical to Al/TiN metal gate electrode.

关键词： Tin Annealing Logic gates Electrodes Materials Modulation

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Immunosensor for detecting pulmonary tuberculosis markers in human serum

Immunosensor for detecting pulmonary tuberculosis markers in...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Chun Xu Xiao-sen Chai Shu-lin Zhang Jia Zhou ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai China State Key Laboratory of Genetic Engineering Fudan University Shanghai China

ISBN: (纸本)9781424457977

A specific and high-sensitive immunosensor for detecting pulmonary tuberculosis (TB) markers in human serum is presented by miniaturizing array of microelectrodes via micro electro-mechanical system (MEMS) for multi-channel electrochemical measurement. The immunosensor is consisted of six Au disk working electrodes, one Au counter electrode and one Ag/AgCl reference electrode. Semi-insulating poly(o-phenylenediamine)(PoPD) film was utilized to co-polymerize and immobilize antigen at the arrayed Au electrodes. The selective recognition of antibody to the corresponding antigen is quantitatively detected by the peak current in the presence of the redox probe, FcCH 2 OH(FcM). Samples with antibody positive and antibody negative can be distinguished.

关键词： Electrodes Immune system Gold Humans Sensitivity Films Arrays

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Highly ordered growth of ZnO nanostructures by combination of nanoimprint lithography and hydrothermal method

Highly ordered growth of ZnO nanostructures by combination o...

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IEEE International Nanoelectronics Conference (INEC)

作者： Shao-Ren Deng Tao Chen Shu-Yi Liu Yi-Fang Chen Ejaz Huq Ran Liu Xin-Ping Qu State Key Lab of ASIC and System Department of Microelectronics Fudan University Shanghai China Rutherford and Appleton Laboratory Didcot Oxfordshire UK

By combining nanoimprint lithography and traditional hydrothermal growth method of ZnO nanorods, vertical and well patterned ZnO nanostructures were successfully fabricated. The imprinted SU-8 resist deep trenches above the ZnO seed layer prohibit the lateral growth of ZnO nanorods. Various patterned vertical ZnO nanostructures like nanorods and nanowalls can be obtained. The improvement of photoluminescence property of ZnO nanorods was observed after removing the SU-8 resist from the substrate by O 2 reactive ion etching (RIE).

关键词： Zinc oxide Nanostructures Nanolithography Resists Etching Photoluminescence Lithography Radio access networks Solvents Gratings

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