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Correlation between Imprint and Long-Time Polarization Reversal under Low Fields in Ferroelectric Thin Films

Chinese Physics Letters 2009年第1期26卷 321-324页

作者：江安全汤庭鳌 ASIC and System State Key Laboratory Department of Microelectronies Fudan University Shanghai 200433

Time interval of slow polarization reversal in ferroelectric thin films is broadened over more than two decades to disobey the classical Kolmogorov-A vrami-Ishibashi （KAI） equation as the applied field approaches the coercive field of domain switching. The assumption of a Lorentzian distribution of logarithmic waiting times of reversed domain nucleation in this equation can resolve this dilemma. In our work, we explain this equation from the coercive-voltage distribution in thin films, and derive a similar function to describe slow polarization reversal from the consideration of a long-time imprint effect rather than the KAI model.

关键词： field emission molybdenum dioxide enhancement factor

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An enhanced close-in phase noise LC-VCO using parasitic V-NPN transistors in a CMOS process

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Journal of Semiconductors 2009年第8期30卷 123-126页

作者：高佩君 Oh N J 闵昊 State Key Laboratory of ASIC & System Fudan University Department of Electronic Engineering Chungju National University

A differential LC voltage controlled oscillator （VCO） employing parasitic vertical-NPN （V-NPN） transistors as a negative gm-cell is presented to improve the close-in phase noise. The V-NPN transistors have lower flicker noise compared to MOS transistors. DC and AC characteristics of the V-NPN transistors are measured to facilitate the VCO design. The proposed VCO is implemented in a 0.18 μm CMOS RF/mixed signal process, and the measurement results show the close-in phase noise is improved by 3.5-9.1 dB from 100 Hz to 10 kHz offset compared to that of a similar CMOS VCO. The proposed VCO consumes only 0.41 mA from a 1.5 V power supply.

关键词： close-in phase noise vertical-NPN flicker noise VCO

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Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates

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Journal of Semiconductors 2009年第6期30卷 138-141页

作者：疏珍万景陆冰睿谢申奇陈宜方屈新萍刘冉 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Micro and Nanotechnology Centre Rutherford Appleton Laboratory Chilton Didcot Oxon OX11 0QX UK

We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography（EBL） and a dry etch technique on a SiNx substrate,intended for large area *** this end,the highly sensitive chemically amplified resist（CAR）,NEB-22,with negative tone was *** EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching（RIE） on the SiNx to form the desired *** properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching ***,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.

关键词： SiNx templates nanoimprint NEB-22 electron bean lithography reactive ion etch

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High spectral quality defect-coupled 1550nm micro-disc lasers

High spectral quality defect-coupled 1550nm micro-disc laser...

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IEEE International Semiconductor Laser Conference

作者： Xinlun Cai Gabor Mezosi Zhuoran Wang Yi Shu Marc Sorel Jiangbo Zhu Nan Chi Siyuan Yu Department of Electronic and Electrical Engineering University of Bristol Bristol UK Department of Electronics and Electrical Engineering University of Glasgow Glasgow UK School of Optoelectronic Information University of Electronic Science and Technology Chengdu Sichuan China Department of Communications Science and Engineering State Key Laboratory of ASIC & System Fudan University Shanghai China

We demonstrate electrically-pumped room-temperature continuous-wave lasing in InP-based microdisks lasers with threshold current of 5mA. A defect on the disc circumference is used to extract the light and to achieve h... 详细信息

关键词： Semiconductor lasers Laser modes Measurement by laser beam Threshold current Power generation Pump lasers Electronic mail

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Design and Simulation of High-Frequency (>100 MHz) Ultrasonic Phased Array Transducer

Design and Simulation of High-Frequency (>100 MHz) Ultrasoni...

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2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Jin-Ying Zhang Bertrand Nongaillard Wei-Jiang Xu Julien Carlier Yi-Ping Huang Xin-Ming Ji Departement d'Opto-Acousto-Electronique IEMN CNRS UMR 8520 Universite de Valenciennes 59313 Vale Departement d'Opto-Acousto-Electronique IEMN CNRS UMR 8520 Universite de Valenciennes 59313 Vale ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 Ch

ISBN: (纸本)9781424457977

This paper presents a theoretical study on the possible realization of high frequency ultrasonic phased array transducer (f>100 MHz) using MEMS technologies. A silicon based lithium niobate (LiNbO3) single crystal linear array is considered. Finite element method is employed for the simulation optimization design of such device. Continuous wave beam steering, focusing under different array and matching conditions are simulated and the beam performance is analyzed. The inter-element crosstalking and the element electrical impedance are also calculated.

关键词： Arrays Finite element methods Acoustics Impedance Focusing Transducers Fluids

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Electrical levels of defect investigation of Zr O2 thin film by spectroscopic ellipsometry

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Journal of Vacuum Science and Technology B: microelectronics and Nanometer Structures 2009年第3期27卷 1030-1034页

作者： Chen, Y.R. Zhou, P. Li, J. Chen, L.Y. Department of Optical Science and Engineering Fudan University Shanghai 200433 China School of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai 200433 China

The electrical levels of defects of high- k dielectric Zr O2 films deposited with different oxygen fluxes have been investigated using x-ray diffraction, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Various defects with the formation of interstitial oxygen and oxygen vacancies existed in monoclinic Zr O2 films. The optical properties of the films are strongly influenced by configuration changes in defects. Parameters were extracted from spectroscopic ellipsometry raw data by Lorentz oscillator model fitting that indicate the probabilities and transition energies for different charged oxygen interstitial and vacancy defects. These correspond to the electron affinity energies calculated by density functional theory and assigned to electrons trapped at different charged defects from the bottom of the conduction band. A nondestructive and noncontact solution is suggested for detecting the defect states and energy level of high- k film. © 2009 American Vacuum Society.

关键词： Spectroscopic ellipsometry

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Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

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Chinese Physics Letters 2009年第10期26卷 200-202页

作者：黄玥苟鸿雁孙清清丁士进张卫张世理 State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 School of Information and Communication KTH Royal Institute of Technology Electrum 229 SE-164 40 Kista Sweden

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10^11 cm^-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1ms, a leakage current density of 2.9 × 10^-8 A/cm^-2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

关键词： Electronics and devices Semiconductors Surfaces interfaces and thin films Nanoscale science and low-D systems

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Layer-by-layer assembly of poly(p-xylyleneviologen)-DNA multilayers and their electrochemical properties

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Materials Science and Engineering C 2009年第3期29卷 925-929页

作者： Chen, Guo-Ping Wang, Xu Liu, Ai-Rong Qian, Dong-Jin State Key Laboratory ASIC and System School of Microelectronics 220 Handan Road Shanghai 200433 China Department of Chemistry Fudan University 220 Handan Road Shanghai 200433 China

Multilayers of poly(p-xylyleneviologen) (PXV) and calf thymus DNA were constructed on the gold surface by layer-by-layer (LBL) method. The assembly process was examined by quartz crystal microbalance (QCM) measurements. According to the frequency change, the average mass increase was estimated to be about 97 and 110ng/cm2 for each assembly of PXV and DNA layer, respectively. Cyclic voltammograms of the multilayer modified gold electrodes showed a couple of redox peaks, the potentials of which were closely dependent on the layer numbers and nature of the outmost layer. The alternatively assembled DNA layers could hinder formation of π-complex dimer of viologen groups due to the strong interlayer electrostatic interaction. The charge transfer process was discussed by the chronocoulometry method. The assembled PXV-DNA multilayers showed high long-term stability at ambient conditions and in electrolyte solution. © 2008 Elsevier B.V. All rights reserved.

关键词： Multilayers

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A robust digital phase discriminator in one-bit quantized software-defined receivers

A robust digital phase discriminator in one-bit quantized so...

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5th International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2009

作者： Jin, Zhao Jianqiu, Zhang Jianjun, Yin State Key Laboratory of ASIC and System Department of E. E. Fudan University Shanghai China

ISBN: (纸本)9781424436934

This paper presents a novel phase discriminator called robust digital phase discriminator (RDPD) for the one-bit analog-to-digital conversion (ADC) software-defined receivers. Different from existing digital phase discriminator (DPD), the proposed RDPD estimates carrier phases of I and Q separately and then fuses the estimation results to achieve higher accuracy and better noise robust characteristic than DPD. Analysis and simulation results indicate that the proposed RDPD outperforms conventional arctangent phase discriminator (APD) and DPD in estimation accuracy wherever in high or low SNR cases. ©2009 IEEE.

关键词： Analog to digital conversion

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Duplication of nanoimprint templates by a novel SU-8/SiO 2/PMMA trilayer technique

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Journal of Vacuum Science and Technology B: microelectronics and Nanometer Structures 2009年第1期27卷 19-22页

作者： Wan, Jing Shu, Zhen Deng, Shao-Ren Xie, Shen-Qi Lu, Bing-Rui Liu, Ran Chen, Yifang Qu, Xin-Ping Department of Microelectronics State Key Laboratory of ASIC and Systems Fudan University Shanghai 200433 China Rutherford Appleton Laboratory Chilton Didcot Oxon OX11 0QX United Kingdom

In this work, a trilayer technique used in the nanoimprint lithography process to replicate the templates is developed. The SU-8/SiO 2/PMMA trilayer was used. The photosensitive epoxy (SU8 resist) which has a low glass transition temperature was used as the imprint layer. Polymethylmethacrylate (PMMA) was used as the transfer layer. A SiO2 layer is placed between the SU8 and PMMA to act as a protective layer due to its strong resistance to oxygen reactive ion etching. By optimizing imprint and etching processes, master templates with minimum feature size of 150 nm and period of 300 nm can be successfully duplicated. © 2009 American Vacuum Society.

关键词： Reactive ion etching

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