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Erbium silicide formation and its contact properties on Si(100)

Journal of Vacuum Science and Technology B: microelectronics and Nanometer Structures 2008年第1期26卷 164-170页

作者： Huang, W. Ru, G.P. Jiang, Y.L. Qu, X.P. Li, B.Z. Liu, R. Lu, F. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Physics Fudan University Shanghai 200433 China

Erbium silicide formation and its contact properties on Si(100) have been studied in this work. With sputtering and rapid thermal annealing, the deposited Er was found to react with the Si(100) substrate upon 300 °C annealing. The formed ErSi2-x is stable up to 1000 °C annealing. Problems of surface oxidation and defect formation were discussed. Pinhole or pyramidal defect was observed to form in the ErSi2-x films depending on the initial Er thickness. The electrical characteristics of ErSi2-x /p-Si (100) Schottky contacts were measured at room temperature for the annealing temperature ranging from 500 to 900 °C and Schottky barrier height (SBH) was found to vary between 0.783 and 0.805 eV. ErSi2-x /n-Si (100) contacts formed after annealing at a temperature from 500 to 900 °C, which have much lower SBHs, were characterized by temperature-dependent current-voltage measurement. The measurement results were analyzed with a Gaussian distribution model of the inhomogeneous SBH. The mean SBHs were extracted to be 0.343-0.427 eV for different annealing temperatures. The standard deviation of the SBH was found to be larger for the ErSi2-x /n-Si (100) diodes annealed at 700, 800, and 900 °C than for those annealed at 500 and 600 °C. © 2008 American Vacuum Society.

关键词： Erbium compounds

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Memory Effect of Metal-Insulator-Silicon Capacitors with SiO2/HfO2/A12O3 Dielectrics

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Chinese Physics Letters 2008年第5期25卷 1908-1911页

作者：廖忠伟黄玥张敏孙清清丁士进张卫 State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.

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A wideband cmos variable gain low noise amplifier based on single-to-differential stage for tv tuner applications

A wideband cmos variable gain low noise amplifier based on s...

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2008 IEEE Asian Solid-state Circuits Conference, A-SSCC 2008

作者： Han, Kefeng Zou, Liang Liao, Youchun Min, Hao Tang, Zhangwen ASIC and System State Key Laboratory Fudan University Shanghai 201203 China Ratio Microelectronics Technology Co. Ltd Shanghai 200433 China

ISBN: (纸本)9781424426058

A wideband CMOS variable gain low noise amplifier (VGLNA) used for TV tuner is presented. A single-to-differential (S2D) circuit other than an off-chip balun is applied for high gain mode and a resistive attenuator is for five steps (6dB per step) attenuation in low gain mode. The performance of S2D, especially the noise factor is analyzed. The chip is implemented in a 0.18-um 1P6M mixed-signal CMOS process. Measurements show that in the 50-860MHz frequency range, the VGLNA achieves 15dB maximum gain, 31dB variable gain range, a minimum 3.8dB noise figure and 2.6dBm IIP3 at 15dB gain while consumes 5.7mA from a 1.8V supply.©2008 IEEE.

关键词： Noise figure

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Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si（100）with Pt Top Electrode

Electrical Characterization of Ultrathin Single Crystalline ...

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Qing-Qing Sun Apurba Laha H.Jrg Osten Shi-Jin Ding David Wei Zhang A.Fissel State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

Capacitor composed of single crystalline GdO on Si（100） with Pt top electrode was fabricated by Molecular Beam *** present a systematic study of electrical properties of as-grown single crystalline Pt/GdO/Si（100）.Three capacitors with different thickness are used for electrical *** EOT of the samples are estimated to be 0.7 nm,1.2 nm and 1.8 nm *** function of Pt on GdO is pinned at 4.75 eV and due to the lattice mismatch between GdO,the interface state density is in the level of 10 extracted by Terman and conductance methods.

关键词： Electrical Characterization of Ultrathin Single Crystalline Gd2O3/Si with Pt Top Electrode

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Alloying Effects in Ni Silicide for CMOS Applications

Alloying Effects in Ni Silicide for CMOS Applications

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Guo-Ping Ru Yu-Long Jiang Bao-Min Wang Yi-Fei Huang Wei Huang State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

The solid-state reaction of Ni/Si in the presence of other elements is *** alloying effects on both NiSi/Si Schottky contacts and Ni fully silicided （FUSI） gates on SiO dielectric are studied by phase, composition,and electrical characterization *** results show that after silicidation Er,Y,and Al all segregated at the Ni-silicide surface rather than piled up at the Ni-silicide/Si interface due to their high affinity to oxygen,therefore little modulation of Schottky barrier height was *** contrast,Ho- and Er-alloyed Ni FUSI gates showed significant work function modulation, which could be related to the crystallinity change of the NiSi film in the presence of these elements.

关键词： Alloying Effects in Ni Silicide for CMOS Applications

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Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer

Improvement of the crystallinity and optical properties of s...

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology

作者： Shu-Yi Liu Tao Chen Yu-Long Jiang Guo-Ping Ru Bing-Zong Li and Xin-Ping Qu State key laboratory of Asic and system Department of MicroelectronicsFudan University

The effect of the ZnO homo-buffer layer on the structural,optical and electrical properties of the Sol-gel ZnO films was systematically *** XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor(F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films.A narrower UV emission at 380nm was observed with weaker deep-level visible emission for the ZnO films with a homo-buffer layer using room-temperature(RT) photoluminescence(PL) spectra. The electrical results show that the carrier concentration of the films with buffer layer is decreased and the Hall mobility is increased,indicating that a ZnO homo-buffer layer can effectively improve the erystallinity of the films and improve both electrical and optical properties.

关键词： ZnO Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer PVD

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Physical and optical properties of ZnO thin films grown by DC sputtering deposition

Physical and optical properties of ZnO thin films grown by D...

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology, ICSICT 2008

作者： Chen, Tao Liu, Shu-Yi Detavernier, Christophe Van Meirhaeghe, R.L. Qu, Xin-Ping State Key Laboratory of Asic and System Department of Microelectronics Fudan University Shanghai 200433 China Department of Solid State Science Ghent University Krijgslaan 281/S1 B-9000 Ghent Belgium

ISBN: (纸本)9781424421855

The effects of the deposition condition of DC sputtering on the properties of ZnO thin films were systematic investigated. ZnO films have been prepared by DC sputtering on the Si and glass substrates in the Ar and O2/Ar ambient with different substrate temperature ranging from room temperature to 300C. Optimal results of the ZnO film were obtained with a deposition temperature of 300C in the O2/Ar ambient. The film has a preferential orientation of (002) and the Zn to O ratio is stoichiometric with a strong band-edge emission in the ultraviolet region. All the films deposited on glass have an optical transmittance over 80 % in the wavelength ranging from 400nm to 800nm. © 2008 IEEE.

关键词： Zinc oxide

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Extended toffoli gate implementation with photons

Extended toffoli gate implementation with photons

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2008 9th International Conference on Solid-state and Integrated-Circuit Technology, ICSICT 2008

作者： Chen, Jia-Lin Zhang, Xiao-Ying Wang, Ling-Li Wei, Xin-Yuan Zhao, Wen-Qing State Key Laboratory of ASIC and System Fudan University Shanghai 201203 China Department of Physics Fudan University Shanghai 201203 China

ISBN: (纸本)9781424421855

The Toffoli gate is an especially important case of the quantum gates. In this paper, we show how to construct Toffoli gates using several additional (ancilla) photons, linear optical instruments and cross-Kerr nonlinearities. Then they are expanded to implement Extended Toffoli gates (ETOF). Our work shows only one n-IPC (n-input parity check) gate plus at most 2m CNOT or NCNOT gates can implement arbitrary ETOF (n, m), indicating the feasibility and advantage of modularizing quantum gates with photons. © 2008 IEEE.

关键词： Photons

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Characterizing Intra-die Spatial Correlation Using Spectral Density Method

Characterizing Intra-die Spatial Correlation Using Spectral ...

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Ninth International Symposium on Quality Electronic Design (ISQED 2008)

作者： Qiang Fu Wai-Shing Luk Jun Tao Changhao Yan Xuan Zeng State Key Laboratory of ASIC & System Microelectronics Department Fudan University Shanghai China

A spectral domain method for intra-die spatial correlation function extraction is presented. Based on theoretical analysis of random field, the spectral density, as the spectral domain counterpart of correlation function, is employed to estimate the parameters of the correlation function effectively in the spectral domain. Compared with the existing extraction algorithm in the original spatial domain, the proposed method can obtain the same quality of results in the spectral domain. In actual measurement process, the unavoidable measurement error with arbitrary frequency components would greatly confound the extraction results. A filtering technique is further proposed to diminish the high frequency components of the measurement error and recover the data from noise contamination for parameter estimation. Experimental results have shown that the proposed method is practical and stable.

关键词： Data mining Pollution measurement Measurement errors CMOS technology Parameter estimation Contamination Circuit synthesis Context modeling Robustness Semiconductor device modeling

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Alloying effects in Ni Silicide for CMOS applications

Alloying effects in Ni Silicide for CMOS applications

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International Conference on Solid-state and Integrated Circuit Technology

作者： Guo-Ping Ru Yu-Long Jiang Bao-Min Wang Yi-Fei Huang Wei Huang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

ISBN: (纸本)9781424421855

The solid-state reaction of Ni/Si in the presence of other elements is investigated. The alloying effects on both NiSi/Si Schottky contacts and Ni fully silicided (FUSI) gates on SiO 2 dielectric are studied by phase, composition, and electrical characterization tools. The results show that after silicidation Er, Y, and Al all segregated at the Ni-silicide surface rather than piled up at the Ni-silicide/Si interface due to their high affinity to oxygen, therefore little modulation of Schottky barrier height was observed. In contrast, Ho- and Er-alloyed Ni FUSI gates showed significant work function modulation, which could be related to the crystallinity change of the NiSi film in the presence of these elements.

关键词： Alloying Silicides Silicidation Substrates Schottky barriers Erbium Nonhomogeneous media Dielectrics Mass spectroscopy Crystallization

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