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Asia and South Pacific Design Automation Conference

作者： Jun Tao Xuan Zeng Wei Cai Yangfeng Su Dian Zhou Charles Chiang ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China Department of Mathematics University of North Carolina Charlotte Charlotte NC USA Mathematics Department Fudan University Shanghai China Electrical Engineering Dept University of Texas Dallas Richardson TX USA Advanced Technology Group Synopsys Inc. Mountain View CA USA

ISBN: (纸本)1424406293;9781424406296

In this paper, stochastic collocation algorithm combined with sparse grid technique (SSCA) is proposed to deal with the periodic steady-state analysis for nonlinear systems with process variations. Compared to the existing approaches, SSCA has several considerable merits. Firstly, compared with the moment-matching parameterized model order reduction (PMOR), which equally treats the circuit response on process variables and frequency parameter by Taylor approximation, SSCA employs homogeneous chaos to capture the impact of process variations with exponential convergence rate and adopts Fourier series or wavelet bases to model the steady-state behavior in time domain. Secondly, contrary to stochastic Galerkin algorithm (SGA), which is efficient for stochastic linear system analysis, the complexity of SSCA is much smaller than that of SGA for nonlinear case. Thirdly, different from efficient collocation method, the heuristic approach which may results in "rank deficient problem" and "Runge phenomenon", sparse grid technique is developed to select the collocation points in SSCA in order to reduce the complexity while guaranteing the approximation accuracy. Furthermore, though SSCA is proposed for the stochastic nonlinear steady-state analysis, it can be applied for any other kinds of nonlinear system simulation with process variations, such as transient analysis, etc.

关键词： Stochastic systems Steady-state Algorithm design and analysis Nonlinear systems Circuits Frequency Chaos Convergence Fourier series Wavelet domain

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Parameterized model order reduction via a two-directional Arnoldi process

Parameterized model order reduction via a two-directional Ar...

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IEEE International Conference on Computer-Aided Design

作者： Yung-Ta Li Zhaojun Bai Yangfeng Su Xuan Zeng Department of Mathematics University of California Davis CA USA Department of Computer Science and Department of Mathematics University of California Davis CA USA School of Mathematical Sciences Fudan University Shanghai China ASIC & System State Key Laboratory Fudan University Shanghai China

This paper presents a multiparameter moment-matching based model order reduction technique for parameterized interconnect networks via a novel two-directional Arnoldi process. It is referred to as a PIMTAP algorithm, which stands for Parameterized Interconnect Macromodeling algorithm via a Two-directional Arnoldi Process. PIMTAP inherits the advantages of previous multiparameter moment-matching algorithms and avoids their shortfalls. It is numerically stable and adaptive, and preserves the passivity of parameterized RLC networks.

关键词： Integrated circuit interconnections Space technology Equations Mathematics Frequency Large-scale systems Reduced order systems Mathematical model Computer science Application specific integrated circuits

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Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

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Chinese Physics Letters 2006年第7期23卷 1929-1931页

作者：卢红亮李彦波徐敏丁士进孙亮张卫汪礼康 State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 College of Electronic and Information Engineering Hebei University Baoding 071002

Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction （XRD）, high- resolution transmission electron microscopy （HRTEM）, and x-ray photoelectron spectroscopy （XPS）. The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and ***, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.

关键词： Characterization Al2O3 Thin Films GaAs Substrate Grown Atomic Layer Deposition

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On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric

On-The-Fly Interface Trap Measurement and Its Impact on the ...

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2007 IEEE International Electron Devices Meeting (IEDM 2007), vol.2

作者： W. J. Liu Z. Y. Liu Daming Huang C. C. Liao L. F. Zhang Z. H. Gan Waisum Wong C. Shen Ming-Fu Li State Key Laboratory ASIC & Syst. Department Microelectronics Fudan University Shanghai China Semiconductor Manufacturing International Corporation Shanghai China SNDL ECE Department National University of Singapore Singapore

For the first time, we developed an on-the-fly method OFIT to measure the interface trap density N{sub}(IT) without recovery during measurement. The OFIT produces the most reliable experimental data of the interface trap generation dynamics under stress and therefore provides a solid ground to check various modeling work. The slope n of t{sup}n time evolution of ΔN{sub}(IT) under stress is temperature dependent, supporting dispersive Hydrogen transport in the oxide. Comparing OFIT data with the data measured by ultra-fast pulsed V{sub}(th) measurement, we successfully decompose the NBTI ΔV{sub}(TH) into interface trap component Δ(V{sub}(TH)){sup}(IT) and oxide charge component Δ(V{sub}(TH)){sup}(OX) quantitatively for the p-MOSFETs with SiON gate dielectric.

关键词： Dielectric measurements Niobium compounds Titanium compounds MOSFET circuits Pulse measurements Density measurement Time measurement Stress Current measurement Charge measurement

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Chemical and electrical characterization of AL2O 3/gaas interface improved by NH3 plasma pretreatment

Chemical and electrical characterization of AL2O 3/gaas inte...

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5th International Conference on Semiconductor Technology, ISTC 2006

作者： Lu, Hong-Liang Sun, Liang Ding, Shi-Jin Xu, Min Zhang, David Wei Wang, Li-Kang State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China

ISBN: (纸本)1566774373

Al2O3 thin films were deposited by atomic layer deposition (ALD) on HF-cleaned and NH3 plasma-treated GaAs surfaces, respectively. The precursors used for Al2O3 films are Trimethylaluminum (TMA) and water vapour (H2O). The structural properties of Al2O3/GaAs interfaces were investigated by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). XPS analyses revealed that GaAs oxides and the elemental As were efficiently removed during the NH3 plasma pretreatment process. In addition, MOS capacitor with Al2O3 gate dielectric on GaAs substrate pretreated by NH3 plasma exhibited the improved electrical properties, which has a higher accumulation capacitance compared to a similar device with only cleaned by HF acid, indicating that the NH3-treated GaAs surface was effectively protected from the degradation at the whole process of Al2O3 ALD.

关键词： Interfaces (materials)

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Interfacial depletion layers evidenced from dielectric relaxation current in ferroelectric thin films

Interfacial depletion layers evidenced from dielectric relax...

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Jiang, A.Q. Lin, Y.Y. Tang, T.A. ASIC and System State Key Lab Department of Microelectronics Fudan University Shanghai 200433 China

ISBN: (纸本)1424401615

The relaxation current decays with time t to follow the Curie-von Schweidler law of Jr(t) = J0t-n with the exponent n slightly less than the unity either under or after dc-voltage stressing of Pb(Zr,Ti)O3 thin films, in agreement with direct measurements of capacitance dispersion evaluated from frequency spectrum. J 0 versus voltage shows a typical behavior of p-n junction at t = 0.28 s but overlapping of twin p-n junctions at t

关键词： Ferroelectric thin films

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The failure mechanism of gate resistance testing for power MOSFET

The failure mechanism of gate resistance testing for power M...

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Pan, Shaohui He, Lunwen Zhang, David Wei Wang, L.K. Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai 200433 China

ISBN: (纸本)1424401615

The vertical DMOS (Double Diffused MOSFET) is widely used in power microelectronics, its switching performance is determined mainly by the gate resistance and the input capacitance. Thus a gate resistance testing technique is developed in order to determine its device functionality. In this paper we will discuss various processes induced device failures, such as the poor interconnect of the poly gate and the metal, the bonding wire, and the etch process, and their impact to the performance and reliability of the devices as well as the in-line testing method used for the performance validation. © 2006 IEEE.

关键词： Electric resistance

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Fast conversion for large Canonical OR-coincidence functions

Fast conversion for large Canonical OR-coincidence functions

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APCCAS 2006 - 2006 IEEE Asia Pacific Conference on Circuits and systems

作者： Yang, M. Wang, L. Almaini, A.E.A. State Key Laboratory of ASIC and System Microelectronics Department Fudan University Shanghai China School of Engineering Napier University Edinburgh United Kingdom

ISBN: (纸本)1424403871

Fixed Polarity Canonical OR-coincidence (COC) expansions based on inclusive-OR and OR operations are dual forms of fixed polarity Reed-Muller expansions . Traditionally, they are obtained from maxterms of Canonical Products-of-sum (CPOS) expansions. Two conversion methods are proposed for generating fixed polarity COC expansions. The first proposed method called maxterm method is based on traditional maxterm method. Fast conversion speed is achieved after the coefficients were divided into several segments to reduce the duplication of the calculation. The second proposed method called minterm method generates fixed polarity COC expansions directly from Programmable Logic Array (PLA) files. The minterm method can on average achieve 37.57% speed improvement over the maxterm method. Both algorithms outperform published work significantly. ©2006 IEEE.

关键词： Timing circuits

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The Study of the Gas Microsensors Based on Polymer-Carbon Black Composites

The Study of the Gas Microsensors Based on Polymer-Carbon Bl...

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2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Haifen Xie Jiangsheng Wu Peng Huang XinmingJi Yiping Hunag Department of Physics East China University of Science and Technology ASIC and System State Key Lab Department of MicroelectronicsFudan University

ISBN: (纸本)1424401607

In this paper,we study a novel chemical gas sensor arrays based on polymer-carbon black *** two different polymers which are poly(4-vinyl phenol), poly(ethylene oxide) are employed as the sensor materials which are immobilized on the array of the interdigitaled microelectrode *** resistance change of sensors of two different organic gases (toluene,methanol) at different concentration has been examined(300ppm,600ppm,900ppm,1200ppm, 1500ppm).At low concentration,Langmuir absorption model is used to explain the reason of the resistance *** relationship between the resistance changes and gas concentration in the range from 300ppm to 1500ppm can be approximated to a straight line;the chemical absorption is also existed in the absorption.

关键词： Langmuir isothermal absorption polymer carbon black desorption

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Copper pulse plating on Ru/TaSiN barrier

Copper pulse plating on Ru/TaSiN barrier

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ICSICT-2006: 2006 8th International Conference on Solid-state and Integrated Circuit Technology

作者： Zeng, Lei Xu, Sai-Sheng Tan, Jing-Jing Zhang, Li-Feng Zhang, Wei Wang, Li-Kang Qu, Xin-Ping State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Limited Company Shanghai 201203 China

ISBN: (纸本)1424401615

The properties of pulse plated copper electrodeposits (1 μm) on ruthenium (5nm) /TaSiN (5nm) diffusion barrier with current density ranging from 2 to 20 A/dm2 are studied. The resistivity of the Cu film is about 27 μΩ, · cm. A (111) preferential orientation is found in almost all cases, which would be good to electromigration performance. Grain size of Cu electrodeposits reduces with increasing current density. Different growth mode is found in low and high current densities. The surface morphology of the copper electrodeposits is very rough at low current densities, due to the bigger grain size. © 2006 IEEE.

关键词： Diffusion barriers

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