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Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

Chinese Physics Letters 2001年第11期18卷 1507-1509页

作者： HUANG Yi-Ping ZHU Shi-Yang LI Ai-Zhen WANG Jin HUANG Jing-Yun YE Zhi-Zhen Department of Microelectronics ASIC&System State Key LaboratoryFudan UniversityShanghai 200433 State Key Laboratory of Silicon Material Science Zhejiang UniversityHangzhou 310027

The epitaxial growth of a high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction,cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.

关键词： porous double vacuum

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Nonequilibrium nondissipative thermodynamics - and its application to diamond film deposition 6

Nonequilibrium nondissipative thermodynamics - and its appli...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Wang, Ji-Tao Department of Microelectronics ASIC System State Key Laboratory Fudan University Shanghai200433 China

ISBN: (纸本)0780365208

The equality of the 2ndlaw of thermodynamics had been regarded as the sufficient and necessary condition for a system being in equilibrium for about 150 years. However, such a classical or traditional basic concept should be overthrown or changed for complex systems including nonspontaneous reaction(s). Therefore, a new field of nonequilibrium nondissipative thermodynamics has been introduced by the author into a complete systematization of modem thermodynamics. Nonequilibrium nondissipative thermodynamics provides a solid theoretical base for quantitative calculation of nonequilibrium phase diagrams. A series of calculated nonequilibrium phase diagrams for activated low pressure diamond films deposition agree excellently with a great number of experimental data reported in the literature. Nonequilibrium nondissipative thermodynamics and the nonequilibrium phase diagram theorem can also be used for cubic boron nitride deposition and other solid-state and integrated circuit technology. © 2001 IEEE.

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A novel configurable analog unit architecture

A novel configurable analog unit architecture

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4th International Conference on asic Proceedings

作者： Guo, Binlin Zhou, Feng Tong, Jiarong ASIC and System State-Key-Lab Microelectronics Department Fudan University Shanghai 200433 China

In this paper, a new architecture of configurable analog unit based on switch capacitor technology is presented. The architecture consists of four parts of input expansion, SC building block, self-calibrating OpAmp and clock control. The architecture not only achieves linear analog application such as integrator, gain amplifier, filter, etc., but also can be expediently configured to implementing some nonlinear analog applications. A programming mechanism using two programmable selector for parameter selector and function selector are illustrated for the architecture. The architecture is propitious to utilize configuration and technology mapping. As nonlinear analog application, a voltage control oscillator is implemented. Simulation result with HSPICE shows that for 0.6μ CMOS process, the relative error of voltage-frequency is less than 0.2%.

关键词： Field programmable gate arrays

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Preparation and properties of (BaxSr1-x)TiO3thin film for high density DRAM application 6

Preparation and properties of (BaxSr1-x)TiO3thin film for hi...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Xie, Yu-Han Lin, Yin-Yin Tang, Ting-Ao Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China

ISBN: (纸本)0780365208

BST thin film is thought as the best candidate to substitute for SiO2thin film in high density DRAM application due to its high dielectric constant and low leakage current property. In this paper, (BaxSr1-x)TiO3(x=0-1) thin films with pure perovskite phase and good surface morphology were successfully prepared by the MOD method, in which acetates and titanium(IV) isopropoxide were used as source materials while acetic acid and ethylene glycol ethyl were used as solvents. The films were heated by two steps pyrolysis and annealing. The precursor and the gel heated at different temperatures were analyzed by thermal analysis and infrared absorption spectroscopy analysis to ascertain mechanism of the heating process and choose an appropriate heating condition. The phase-formation characteristics of the films were investigated by X-ray diffraction. For the film prepared under the optimized condition, dielectric constant distributed between 1036 and 340 when frequency varied from 10 kHz to 3 MHz. © 2001 IEEE.

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Schottky barrier height inhomogeneities of nickel mono-silicide/n-Si contact studied by I-V-T technique 6

Schottky barrier height inhomogeneities of nickel mono-silic...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Jiang, Yu-Long Tian, Yun Ru, Guo-Ping Han, Yong-Zhao Lu, Fang Li, Bing-Zong Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China State Key Laboratory of Applied Surface Physics Fudan University Shanghai200433 China

ISBN: (纸本)0780365208

The current-voltage (I-V) characteristics of nickel mono-silicide/n-Si Schottky diodes fabricated at different temperature and measured over a temperature range of 78 to 299 K have been interpreted on the basis of thermionic emission (TE) across an inhomogeneous Schottky contact. The experiment shows that the apparent barrier height φap-1/T plot is a straight line within the whole experimental temperature for samples annealed at temperature ranging from 500°C to 600°C, however, for other samples annealed at temperature below 500°C and above 600°C the φap-1/T Plots become more complicated. The linear case shows the Schottky barrier height inhomogeneities (SBHI) obeys single Gaussian distribution. © 2001 IEEE.

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Ni(Pt)Si thin film formation and its electrical characteristics with Si substrate 6

Ni(Pt)Si thin film formation and its electrical characterist...

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6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Han, Yong-Zhao Qu, Ying-Ping Jiang, Yu-Long Xu, Bei-Lei Cao, Yong-Feng Ru, Guo-Ping Li, Bing-Zong Chu, P.K. Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai200433 China Department of Physics and Materials Science City University of Hong Kong Hong Kong Hong Kong

ISBN: (纸本)0780365208

The solid phase silicidations for the bilayers of Ni/Pt and Pt/Ni sputtered on Si[100] substrates were studied. The effect of Pt addition in the NiSi film on its thermal stability enhancement was investigated. The results show that the phase transformation from Ni(Pt)Si to NiSi2was delayed to higher temperature than the Ni/Si system without Pt as a capping- or inter-layer by more than 100°C. The apparent Schottky barrier height of Ni(Pt)Si/n-Si(111) is modulated with the Pt content, and the electrical characteristic is good in the silicidation temperature of 500-800°C. © 2001 IEEE.

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Nonequilibrium Nondissipative Thermodynamics——and Its Application to Diamond Film Deposition

Nonequilibrium Nondissipative Thermodynamics——and Its Appl...

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2001 6th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2001)

作者： Ji-Tao Wang Department of Microelectronics ASIC and System State Key Laboratory Fudan University

The equality of the 2nd law of thermodynamics had been regarded as the sufficient and necessary condition for a system being in equilibrium for about 150 years. However,such a classical or tradi

ISBN: (纸本)0780365208

The equality of the 2nd law of thermodynamics had been regarded as the sufficient and necessary condition for a system being in equilibrium for about 150 years. However,such a classical or tradi

关键词： diamond nonequilibrium thermodynamics CVD coatings phase diagrams nonequilibrium nondissipative thermodynamics diamond film deposition second law of thermodynamics nonequilibrium phase diagrams cubic boron nitride deposition CVD C BN

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Fabrication of silicon-silicide-on-insulator substrates using wafer bonding and layer-cutting techniques

Fabrication of silicon-silicide-on-insulator substrates usin...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Shiyang Zhu Guoping Ru Yiping Huang Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai China

ISBN: (纸本)0780365208

A novel single-crystalline Si/poly-CoSi/sub 2//SiO/sub 2//Sub-Si structure has been successfully formed by silicon wafer bonding and hydrogen implantation induced layer cutting techniques. The hydrogen implanted silicon wafer were deposited by a thin Co and Si films subsequently and was brought into contact with an. During the oxidized silicon wafer at room temperature. During the subsequent annealing, the hydrogen-implanted wafer was split along the projected range, leaving a thin Si film and the above deposited films on the oxidized wafer to form a multi-layer structure. The following annealing procedure not only increases the bond strength, but also employs solid state reaction of the deposited Co to form a buried poly-crystalline CoSi/sub 2/ layer with a resistivity of about 160 /spl mu//spl Omega//spl middot/cm.

关键词： Fabrication Silicon Semiconductor films Wafer bonding Hydrogen Annealing Substrates Temperature Solid state circuits Conductivity

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A novel configurable analog unit architecture

A novel configurable analog unit architecture

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International Conference on asic

作者： Binlin Guo Feng Zhou Jiarong Tong ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China

In this paper, a new architecture of configurable analog unit based on switch capacitor technology is presented. The architecture consists of four parts of input expansion, SC building block, self-calibrating OpAmp and clock control. The architecture not only achieves linear analog application such as integrator, gain amplifier, filter, etc., but also can be expediently configured to implementing some nonlinear analog applications. A programming mechanism using two programmable selector for parameter selector and function selector are illustrated for the architecture. The architecture is propitious to utilize configuration and technology mapping. As nonlinear analog application, a voltage control oscillator is implemented. Simulation result with HSPICE shows that for 0.6 /spl mu/ CMOS process, the relative error of voltage-frequency is less than 0.2%.

关键词： Clocks Field programmable analog arrays Switches CMOS technology Functional programming CMOS process Voltage Field programmable gate arrays Logic Capacitors

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A timing model of GHz e-shape interconnection

A timing model of GHz e-shape interconnection

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International Conference on asic

作者： Lili Zhou Wenqing Zhao Xuan Zeng ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China

Driven by the demands of increasing GHz frequency applications, it is a very important target to decrease the delay of VLSI interconnection according to the theory deduction and simulation. The e-shape interconnection model has been proved to have less delay than the equal-width fine model based on Elmore delay. Considering the difficulties of duducing the theory of the RCL model of e-line, we use an effective way to deal with the RCL model in deducing the transmission mechanism of e-line interconnection by referring to methods used in microwave transmission fine theory and inspired by the technology process. A more applicable RCL e-line model is presented.

关键词： Timing Integrated circuit interconnections Delay Inductance Frequency Transmission line theory Laplace equations Microwave theory and techniques Microwave technology Transmission line matrix methods

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