检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

633 篇 会议
364 篇 期刊文献

馆藏范围

997 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

701 篇 工学
- 382 篇 电子科学与技术（可...
- 232 篇 材料科学与工程（可...
- 147 篇 计算机科学与技术...
- 144 篇 电气工程
- 114 篇 化学工程与技术
- 74 篇 软件工程
- 51 篇 光学工程
- 51 篇 信息与通信工程
- 50 篇 机械工程
- 48 篇 控制科学与工程
- 47 篇 仪器科学与技术
- 44 篇 冶金工程
- 39 篇 动力工程及工程热...
- 21 篇 生物医学工程（可授...
- 20 篇 力学（可授工学、理...
- 20 篇 生物工程
- 10 篇 土木工程
- 8 篇 建筑学
327 篇 理学
- 210 篇 物理学
- 118 篇 化学
- 79 篇 数学
- 24 篇 生物学
- 18 篇 统计学（可授理学、...
- 17 篇 系统科学
45 篇 管理学
- 40 篇 管理科学与工程(可...
- 12 篇 工商管理
17 篇 医学
- 13 篇 临床医学
- 12 篇 基础医学(可授医学...
9 篇 经济学
- 9 篇 应用经济学
5 篇 法学
2 篇 军事学
1 篇 艺术学

主题

33 篇 application spec...
29 篇 microelectronics
29 篇 silicon
24 篇 films
20 篇 field programmab...
19 篇 annealing
18 篇 electrodes
17 篇 logic gates
17 篇 integrated circu...
16 篇 computer archite...
16 篇 computational mo...
16 篇 clocks
15 篇 circuit simulati...
15 篇 substrates
15 篇 capacitors
14 篇 switches
14 篇 hardware
13 篇 temperature
13 篇 zinc oxide
13 篇 algorithm design...

机构

171 篇 state key labora...
97 篇 state key labora...
72 篇 state key labora...
26 篇 state key labora...
23 篇 state key lab of...
19 篇 asic and system ...
16 篇 university of ch...
15 篇 fudan university...
13 篇 state key labora...
11 篇 state key labora...
11 篇 asic and system ...
11 篇 fudan university
11 篇 asic & system st...
11 篇 asic & system st...
11 篇 state key labora...
10 篇 department of ma...
10 篇 state key labora...
10 篇 asic and system ...
10 篇 state key labora...
10 篇 state key lab. o...

作者

67 篇 david wei zhang
53 篇 peng zhou
50 篇 xuan zeng
36 篇 dian zhou
33 篇 jia zhou
31 篇 xin-ping qu
26 篇 yu-long jiang
25 篇 guo-ping ru
24 篇 zhang david wei
23 篇 qing-qing sun
23 篇 shi-jin ding
23 篇 zhou jia
22 篇 张卫
22 篇 qu xin-ping
22 篇 junyan ren
21 篇 yiping huang
20 篇 wenzhong bao
20 篇 xiaoyang zeng
18 篇 bing-zong li
17 篇 lin chen

语言

958 篇 英文
29 篇 中文
10 篇 其他

检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"

共 997 条记录，以下是971-980 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

A novel technique for behavioral modeling of the second generation switched-current building block circuits

A novel technique for behavioral modeling of the second gene...

引用

International Conference on asic

作者： X. Zeng W. Wang J.L. Shi P.S. Tang ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China

The proposed models are capable of capturing not only the ideal behavior of switched-current circuits, but also the non-ideal behavior, which includes the charge injection effect, device mismatch effect, and finite output conductance effect. In order to evaluate the accuracy of these models, a time domain behavioral simulator SIsim is developed, in which high-order effects of errors are considered. Compared with the traditional simulator SPICE, the behavioral modeling error of SIsim is less than 1.0% while the behavioral simulation speed is 3 to 4 orders higher in time-domain.

关键词： Circuit simulation Switching circuits Switches SPICE Very large scale integration Signal design Analog circuits Degradation microelectronics Time domain analysis

来源：评论

学校读者我要写书评

暂无评论

Preparation and properties of (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ thin film for high density DRAM application

Preparation and properties of (Ba/sub x/Sr/sub 1-x/)TiO/sub ...

引用

International Conference on Solid-state and Integrated Circuit Technology

作者： Yu-han Xie Yin-yin Lin Ting-ao Tang Department of Microelectronics ASIC & System State Key Laboratory Fudan University Shanghai China

ISBN: (纸本)0780365208

BST thin film is thought as the best candidate to substitute for SiO/sub 2/ thin film in high density DRAM application due to its high dielectric constant and low leakage current property. In this paper, (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ (x=0-1) thin films with pure perovskite phase and good surface morphology were successfully prepared by the MOD method, in which acetates and titanium(IV) isopropoxide were used as source materials while acetic acid and ethylene glycol ethyl were used as solvents. The films were heated by two steps pyrolysis and annealing. The precursor and the gel heated at different temperatures were analyzed by thermal analysis and infrared absorption spectroscopy analysis to ascertain mechanism of the heating process and choose an appropriate heating condition. The phase-formation characteristics of the films were investigated by X-ray diffraction. For the film prepared under the optimized condition, dielectric constant distributed between 1036 and 340 when frequency varied from 10 kHz to 3 MHz.

关键词： Infrared heating Dielectric thin films Infrared spectra Binary search trees Random access memory High-K gate dielectrics Leakage current Strontium Surface morphology Anti-freeze

来源：评论

学校读者我要写书评

暂无评论

The effect of Pd addition on silicide formation for Ni/Pd bilayers on silicon 6

The effect of Pd addition on silicide formation for Ni/Pd bi...

引用

6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Qu, Xin-Ping Detavernier, C. Meirhaeghe, R.L. Ru, Guo-Ping Li, Bing-Zong Dept. of Microelectronics ASIC and system State key laboratory Fudan University Shanghai 200433 China Dept. of Solid State Science Gent University Krijgslaan B-9000 Gent Belgium

ISBN: (纸本)0780365208

Ni/Pd bilayers were deposited on n-Si [100] substrates and annealed up to 900°C using rapid thermal annealing (RTA). Results show that the nucleation temperature for NiSi2is delayed due to the Id addition. The higher the Pd addition, the higher the nucleation temperature of NiSi2. Meanwhile, the PdSi nucleation is promoted because of alloying with Ni and PdSi can be formed at temperature lower than 750°C. When the Ni/Pd/Si samples were annealed at 500°C, the barrier height value of the formed silicide/Si contact is near that of NiSi/Si. Annealing at 600°C increased the barrier height value, which indicates that Ni(Pd)Si was formed. The I-V-T measurements on both Ni/Pd/Si and Ni/Si samples show that, the Schottky barrier formed from Ni/Pd/Si annealed at 600°C has a better linear I-V characteristic and lower leakage current than those of NiSi/Si. © 2001 IEEE.

关键词：

来源：评论

学校读者我要写书评

暂无评论

An improved chip level thermal analysis algorithm using BEM

An improved chip level thermal analysis algorithm using BEM

引用

International Conference on asic

作者： Mingdong Cui Wenqing Zhao Pushan Tang ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China

The increasing number of thermal-related problems in VLSI circuit led to the requirement for more efficient temperature analysis tools. In this paper, we developed an algorithm to calculate temperature profile using BEM, our method can handle large amount of heat-sources, thus surface temperature profile and inner profile could be calculated quickly and accurately.

关键词： Algorithm design and analysis Equations Boundary conditions microelectronics Very large scale integration Computational complexity Failure analysis High speed integrated circuits Temperature distribution Statistical analysis

来源：评论

学校读者我要写书评

暂无评论

An efficient VLSI architecture for 2D-DCT using direct method

An efficient VLSI architecture for 2D-DCT using direct metho...

引用

International Conference on asic

作者： Bian Li Jian Zeng Xuan Tong Jia Rong Liu Yue ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China

An efficient VLSI architecture for 8/spl times/8 two-dimensional (2D) discrete cosine transform (DCT) is proposed in this paper. It is a folded architecture using direct method. It can compute 2D-DCT of a 12-b 8/spl times/8 block using one 1D-DCT unit without transpose memory. Taking advantage of the direct method, the total number of multiplications in the proposed architecture is only half of that required for row-column method. It, in turn, results in the doubled operating speed compared with those conventional implementations with row-column method. Under 0.6 /spl mu/m CMOS and double metal technology, the proposed architecture presents a chip with core size 3.9/spl times/0.9 mm/sup 2/, transistor count 114 K and clock rate 200 MHz.

关键词： Very large scale integration Computer architecture Discrete cosine transforms Application specific integrated circuits microelectronics CMOS technology Clocks Hardware Parallel algorithms Degradation

来源：评论

学校读者我要写书评

暂无评论

The Schottky characteristics of Ti/n-GaAs surface-treated by N2plasma 6

The Schottky characteristics of Ti/n-GaAs surface-treated by...

引用

6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Jiang, Yu-Long Ru, Guo-Ping Lu, Fang Li, Bing-Zong Li, Wei Li, Ai-Zhen Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China State Key Laboratory of Applied Surface Physics Fudan University Shanghai200433 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy of Sciences Shanghai200050 China

ISBN: (纸本)0780365208

The Schottky characteristics of Ti contacts on n-GaAs surface-treated by N2plasma at different temperature are studied. The capacitance-voltage (C-V) characteristic of the samples surface-treated by N2plasma is far more ideal than that of the pure GaAs samples. The Schottky characteristic of the samples surface-treated at 350°C is better than that of samples treated at 950°C. In this article, the zero-bias Schottky barrier height (SBH) Φb0, the flat-band SBH Φb0, the thickness of the interfacial layer δ, the permittivity of the interfacial layer iand the ideality factor n of the samples at different nitridation temperature are extracted from the forward, reverse current-voltage (I-V) and the C-V measurement, respectively. Also the distribution of interface states density is qualitatively determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. © 2001 IEEE.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Circuit design and implementation for digital temperature and humidity measurement and control

Circuit design and implementation for digital temperature an...

引用

International Conference on asic

作者： Cao Hui Huang Junnai ASIC & System State Key Lab Microelectronics Department Fudan University Shanghai China

This paper describes a mixed signal, low power circuit design for temperature and humidity measurement and control. Temperature and humidity are sensed using a thermistor sensor and a hygrometer sensor. The theory of an RC oscillator is used to convert sensor resistance into a frequency signal. A ROM (Read Only Memory) is used to map the Schmitt trigger frequency onto temperature and humidity. The control block can control the outer device to implement some demand according to the value of measurement. This circuit can measure temperature to an accuracy of 1 V in the range of -20/spl deg/C to 60/spl deg/C and measure humidity to an accuracy of 10%RH in the range of 40%RH to 90%RH.

关键词： Circuit synthesis Temperature sensors Temperature measurement Humidity measurement Thermal sensors Read only memory Electrical resistance measurement Humidity control Temperature control Thermistors

来源：评论

学校读者我要写书评

暂无评论

Modeling switched-current functional block circuits using VHDL-AMS language

Modeling switched-current functional block circuits using VH...

引用

International Conference on asic

作者： J.L. Shi X. Zeng ASIC & System State Key Lab Microelectronics Department Fudan University Shanghai China

This paper proposes the behavioral models of the second-generation switched-current functional block circuits using the VHDL-AMS language. The proposed models cannot only characterize the ideal behavior of the SI circuits, but also capture the SI higher order non-ideal effects, which include the charge injection effects and device mismatch effects. The accuracy of the proposed models is verified by the VHDL-AMS simulator ZENI1.0. The experimental results have shown that compared with SPICE, the behavioral modeling error is less than 1.8%, while time-domain behavioral simulation speed up is 1 to 2 orders.

关键词： Switching circuits Circuit simulation Switches SPICE Signal design CMOS technology Computational modeling Capacitance Application specific integrated circuits microelectronics

来源：评论

学校读者我要写书评

暂无评论

Schottky barrier height inhomogeneities of nickel mono-silicide/n-Si contact studied by I-V-T technique

Schottky barrier height inhomogeneities of nickel mono-silic...

引用

International Conference on Solid-state and Integrated Circuit Technology

作者： Yu-Long Jiang Yun Tian Guo-Ping Ru Yong-Zhao Han Fang Lu Bing-Zong Li Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai China State Key Laboratory of Applied Surface Physics Fudan University Shanghai China

ISBN: (纸本)0780365208

The current-voltage (I-V) characteristics of nickel mono-silicide/n-Si Schottky diodes fabricated at different temperature and measured over a temperature range of 78 to 299 K have been interpreted on the basis of thermionic emission (TE) across an inhomogeneous Schottky contact. The experiment shows that the apparent barrier height /spl phi//sub ap/-1/T plot is a straight line within the whole experimental temperature for samples annealed at temperature ranging from 500/spl deg/C to 600/spl deg/C, however, for other samples annealed at temperature below 500/spl deg/C and above 600/spl deg/C the /spl phi//sub ap/-1/T Plots become more complicated. The linear case shows the Schottky barrier height inhomogeneities (SBHI) obeys single Gaussian distribution.

关键词： Schottky barriers Nickel Temperature distribution Temperature measurement Annealing Schottky diodes Current measurement Thermionic emission Tellurium Gaussian distribution

来源：评论

学校读者我要写书评

暂无评论

The effect of Pd addition on silicide formation for Ni/Pd bilayers on silicon

The effect of Pd addition on silicide formation for Ni/Pd bi...

引用

International Conference on Solid-state and Integrated Circuit Technology

作者： Xin-Ping Qu C. Detavernier R.L. Meirhaeghe Guo-Ping Ru Bing-Zong Li Department of Microelectronics ASIC and system State key laboratory Fudan University Shanghai China Department of Solid State Science Gent University Ghent Belgium

ISBN: (纸本)0780365208

Ni/Pd bilayers were deposited on n-Si [100] substrates and annealed up to 900/spl deg/C using rapid thermal annealing (RTA). Results show that the nucleation temperature for NiSi/sub 2/ is delayed due to the Id addition. The higher the Pd addition, the higher the nucleation temperature of NiSi/sub 2/. Meanwhile, the PdSi nucleation is promoted because of alloying with Ni and PdSi can be formed at temperature lower than 750/spl deg/C. When the Ni/Pd/Si samples were annealed at 500/spl deg/C, the barrier height value of the formed silicide/Si contact is near that of NiSi/Si. Annealing at 600/spl deg/C increased the barrier height value, which indicates that Ni(Pd)Si was formed. The I-V-T measurements on both Ni/Pd/Si and Ni/Si samples show that, the Schottky barrier formed from Ni/Pd/Si annealed at 600/spl deg/C has a better linear I-V characteristic and lower leakage current than those of NiSi/Si.

关键词： Silicides Silicon Nickel Temperature Rapid thermal annealing Alloying Current measurement Schottky barriers Contact resistance Sputtering

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共100页 << < 91 92 93 94 95 96 97 98 99 100 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：