检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

633 篇 会议
364 篇 期刊文献

馆藏范围

997 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

701 篇 工学
- 382 篇 电子科学与技术（可...
- 232 篇 材料科学与工程（可...
- 147 篇 计算机科学与技术...
- 144 篇 电气工程
- 114 篇 化学工程与技术
- 74 篇 软件工程
- 51 篇 光学工程
- 51 篇 信息与通信工程
- 50 篇 机械工程
- 48 篇 控制科学与工程
- 47 篇 仪器科学与技术
- 44 篇 冶金工程
- 39 篇 动力工程及工程热...
- 21 篇 生物医学工程（可授...
- 20 篇 力学（可授工学、理...
- 20 篇 生物工程
- 10 篇 土木工程
- 8 篇 建筑学
327 篇 理学
- 210 篇 物理学
- 118 篇 化学
- 79 篇 数学
- 24 篇 生物学
- 18 篇 统计学（可授理学、...
- 17 篇 系统科学
45 篇 管理学
- 40 篇 管理科学与工程(可...
- 12 篇 工商管理
17 篇 医学
- 13 篇 临床医学
- 12 篇 基础医学(可授医学...
9 篇 经济学
- 9 篇 应用经济学
5 篇 法学
2 篇 军事学
1 篇 艺术学

主题

33 篇 application spec...
29 篇 microelectronics
29 篇 silicon
24 篇 films
20 篇 field programmab...
19 篇 annealing
18 篇 electrodes
17 篇 logic gates
17 篇 integrated circu...
16 篇 computer archite...
16 篇 computational mo...
16 篇 clocks
15 篇 circuit simulati...
15 篇 substrates
15 篇 capacitors
14 篇 switches
14 篇 hardware
13 篇 temperature
13 篇 zinc oxide
13 篇 algorithm design...

机构

171 篇 state key labora...
97 篇 state key labora...
72 篇 state key labora...
26 篇 state key labora...
23 篇 state key lab of...
19 篇 asic and system ...
16 篇 university of ch...
15 篇 fudan university...
13 篇 state key labora...
11 篇 state key labora...
11 篇 asic and system ...
11 篇 fudan university
11 篇 asic & system st...
11 篇 asic & system st...
11 篇 state key labora...
10 篇 department of ma...
10 篇 state key labora...
10 篇 asic and system ...
10 篇 state key labora...
10 篇 state key lab. o...

作者

67 篇 david wei zhang
53 篇 peng zhou
50 篇 xuan zeng
36 篇 dian zhou
33 篇 jia zhou
31 篇 xin-ping qu
26 篇 yu-long jiang
25 篇 guo-ping ru
24 篇 zhang david wei
23 篇 qing-qing sun
23 篇 shi-jin ding
23 篇 zhou jia
22 篇 张卫
22 篇 qu xin-ping
22 篇 junyan ren
21 篇 yiping huang
20 篇 wenzhong bao
20 篇 xiaoyang zeng
18 篇 bing-zong li
17 篇 lin chen

语言

958 篇 英文
29 篇 中文
10 篇 其他

检索条件"机构=State Key Laboratory of ASIC and System Department of Microelectronics"

共 997 条记录，以下是981-990 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Epitaxial growth and transfer of single crystalline Si thin films on double layered porous silicon substrate

Epitaxial growth and transfer of single crystalline Si thin ...

引用

International Conference on Solid-state and Integrated Circuit Technology

作者： Shiyang Zhu Aizhen Li Yiping Huang Department of Microelectronics ASIC & Systems State Key Laboratory Fudan University Shanghai China

ISBN: (纸本)0780365208

A double layered porous silicon with different porosity was formed on a heavy doped p-type Si(111) substrate by changing current density during the anodization. Then a high quality epitaxial monocrystalline silicon film was grown on the porous silicon using an ultra-high vacuum electron beam evaporator. This wafer was bonded with other silicon wafer with a thermal oxide layer at room temperature. The bonded pairs were split along the porous silicon layer during subsequent thermal annealing. Thus the epitaxial Si film was transferred to the oxidized wafer to form a silicon-on-insulator structure. SEM, XTEM and spreading resistance profiles show that the SOI structure has good structural and electrical quality.

关键词： Epitaxial growth Crystallization Semiconductor thin films Silicon Semiconductor films Wafer bonding Substrates Current density Electron beams Temperature

来源：评论

学校读者我要写书评

暂无评论

The design of general-purpose parallel interface based on CPLD

The design of general-purpose parallel interface based on CP...

引用

International Conference on asic

作者： Chengfang Yu Huihua Yu Tmg-ao Tang Department Of E.E. Fudan University Shanghai China ASIC & System State Key Laboratory Department of Microelectronics Fudan University China

The design of a general-purpose parallel interface based on CPLD is described. As a result, system design can be simplified by using a parallel interface circuit that is composed of CPLDs in an embedded system. Flexibility is another advantage. The module method has been used in the design, so the design procedure becomes simpler and more efficient. It also has reusable performance.

关键词： Logic functions Embedded system Flexible printed circuits Logic circuits Field programmable gate arrays Fabrication Decoding Logic devices Computer buffers User interfaces

来源：评论

学校读者我要写书评

暂无评论

Behavioral modeling of analog circuits by wavelet collocation method 01

Behavioral modeling of analog circuits by wavelet collocatio...

引用

IEEE International Conference on Computer-Aided Design

作者： Xin Li Xuan Zeng Dian Zhou Xieting Ling ASIC & System State Key Laboratory Microelectronics Department Fudan University Shanghai China ECE Department University of Texas Dallas Richardson TX USA

ISBN: (纸本)0780372476

In this paper, we develop a wavelet collocation method with nonlinear companding for behavioral modeling of analog circuits. To construct the behavioral models, the circuit is first partitioned into building blocks and the input-output function of each block is then approximated by wavelets. As the blocks are mathematically represented by sets of simple wavelet basis functions, the computation cost for the behavioral simulation is significantly reduced. The proposed method presents several merits compared with those conventional techniques. First, the algorithm for expanding input-output functions by wavelets is a general-purpose approach, which can be applied in automatically modeling of different analog circuit blocks with different structures. Second, both the small signal effect and the large signal effect are modeled in a unified formulation, which eases the process of modeling and simulation. Third, a nonlinear companding method is developed to control the modeling error distribution, To demonstrate the promising features of the proposed method, a 4th order switched-current filter is employed to build the behavioral model.

关键词： Analog circuits Circuit simulation Computational modeling Signal processing Computational efficiency Error correction Predictive models Polynomials microelectronics Cost function

来源：评论

学校读者我要写书评

暂无评论

Modeling and simulation of RLC interconnect effects with the AWE method 6

Modeling and simulation of RLC interconnect effects with the...

引用

6th International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2001

作者： Zhu, Zhaomin Streiter, R. Xia, Xiao Gang, Ruan Wolf, H. Otto, T. Gessner, T. Department of Microelectronics ASIC and System State Key Lab. Fudan University Shanghai200433 China Center of Microtechnology TU Chemnitz ChemnitzD-09107 Germany Fraunhofer Institute for Reliability and Microintegration Dept. Micro Devices and Equipment ChemnitzD-09126 Germany

ISBN: (纸本)0780365208

Analysis of RLC interconnect circuit models with initial conditions and non-monotone response waveforms requires a more comprehensive waveform simulator. AWE is a generalized approach to approximating the waveform response of linear circuits with multiple steps and ramp input signals as well as unrestricted nonequilibrium initial conditions. In this paper AWE method is used to model and simulate interconnect effects such as time delay, overshoot and crosstalk. These new distributed models reveal that peak crosstalk voltage is over 60% larger for 5 GHz high-speed interconnects than predicted by current distributed RC models. © 2001 IEEE.

关键词：

来源：评论

学校读者我要写书评

暂无评论

The Schottky Characteristics of Ti/n-GaAs Surface-Treated by N2 Plasma

The Schottky Characteristics of Ti/n-GaAs Surface-Treated by...

引用

2001 6th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2001)

作者： Yu-Long Jiang Guo-Ping Ru Fang Lu Bing-Zong Li Wei Li Ai-Zhen Li Department of Microelectronics ASIC and System State Key Lab.Fudan University State Key Laboratory of Applied Surface Physics Fudan University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of MetallurgyChinese Academy of Sciences

The Schottky characteristics of Ti contacts on nGaAs surface-treated by N2 plasma at different temperature are *** capacitance-voltage（C-V） characteristic of the samples surface-treated by

关键词：

来源：评论

学校读者我要写书评

暂无评论

The Schottky characteristics of Ti/n-GaAs surface-treated by N/sub 2/ plasma

The Schottky characteristics of Ti/n-GaAs surface-treated by...

引用

International Conference on Solid-state and Integrated Circuit Technology

作者： Yu-Long Jiang Guo-Ping Ru Fang Lu Bing-Zong Li Wei Li Ai-Zhen Li Department of Microelectronics ASIC and System State Key Laboratory Fudan University Shanghai China State Key Laboratory of Applied Surface Physics Fudan University Shanghai China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Metallurgy Chinese Academy and Sciences Shanghai China

ISBN: (纸本)0780365208

The Schottky characteristics of Ti contacts on n-GaAs surface-treated by N/sub 2/ plasma at different temperature are studied. The capacitance-voltage (C-V) characteristic of the samples surface-treated by N/sub 2/ plasma is far more ideal than that of the pure GaAs samples. The Schottky characteristic of the samples surface-treated at 350/spl deg/C is better than that of samples treated at 950/spl deg/C. In this article, the zero-bias Schottky barrier height (SBH) /spl Phi//sub b0/, the flat-band SBH /spl Phi//sub b//sup 0/, the thickness of the interfacial layer /spl delta/, the permittivity of the interfacial layer /spl epsiv//sub i/ and the ideality factor n of the samples at different nitridation temperature are extracted from the forward, reverse current-voltage (I-V) and the C-V measurement, respectively. Also the distribution of interface states density is qualitatively determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.

关键词： Plasma temperature Capacitance-voltage characteristics Plasma properties Surface treatment Gallium arsenide Schottky barriers Current measurement Permittivity measurement Thickness measurement Interface states

来源：评论

学校读者我要写书评

暂无评论

A frequency domain fast wavelet collocation method for high-speed circuit simulation

A frequency domain fast wavelet collocation method for high-...

引用

International Conference on asic

作者： Xuan Zeng Sheng Huang Jian Wang Dian Zhou ASIC & System State-Key-Lab Microelectronics Dept Fudan University Shanghai China ECE Department University of Texas Dallas Richardson TX USA

In this paper, we present the frequency domain fast wavelet collocation method (FFWCM) for high-speed VLSI circuit simulation. Compared with the time domain fast wavelet collocation method (TFWCM), FFWCM presents the following merits. First, it consumes much less memory space and computation time, and can effectively deal with large scale circuits. Second, the frequency domain singularity can be easily handled by adaptive schemes and a frequency domain uniform error distribution can be achieved. Furthermore, the approximated time domain analytical solution can be simply obtained without performing the time consuming numeric inverse Laplace transforms. Numerical experimental results have further demonstrated the promising features of FFWCM.

关键词： Frequency domain analysis Wavelet domain Circuit simulation Computational modeling Large-scale systems Laplace equations Application specific integrated circuits microelectronics Time domain analysis Performance analysis

来源：评论

学校读者我要写书评

暂无评论

Zeolite-coated Microcantilever Gas Sensor

Zeolite-coated Microcantilever Gas Sensor

引用

2001 6th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2001)

作者： Jia Zhou Po Li Song Zhang Feng Zhou Yiping Huang Pengyuan Yang Minhang Bao ASIC and System State Key Lab Department of Microelectronics Fudan University Department of Mechanical Engineering Institute of Petrochemical Technology East-China University of Science and Technology Chemistry Department Fudan University

A novel freon gas sensor of piezoelectric microcantilever coated with zeolite has been developed in this *** by a PZT layer,the microcantilevers are employed to detect the concentration o

ISBN: (纸本)0780365208

A novel freon gas sensor of piezoelectric microcantilever coated with zeolite has been developed in this *** by a PZT layer,the microcantilevers are employed to detect the concentration o

关键词： microsensors gas sensors zeolites piezoelectric devices freon gas sensor piezoelectric microcantilever zeolite coating PZT layer gas concentration molecular sifter microporous material

来源：评论

学校读者我要写书评

暂无评论

Ni(Pt)Si thin film formation and its electrical characteristics with Si substrate

Ni(Pt)Si thin film formation and its electrical characterist...

引用

International Conference on Solid-state and Integrated Circuit Technology

作者： Yong-Zhao Han Ying-Ping Qu Yu-Long Jiang Bei-Lei Xu Yong-Feng Cao Guo-Ping Ru Bing-Zong Li P.K. Chu Department of Microelectronics ASIC and Systems State Key Laboratory Fudan University Shanghai China Department of Physics and Materiaals Science City University of Hong Kong Hong Kong China

ISBN: (纸本)0780365208

The solid phase silicidations for the bilayers of Ni/Pt and Pt/Ni sputtered on Si[100] substrates were studied. The effect of Pt addition in the NiSi film on its thermal stability enhancement was investigated. The results show that the phase transformation from Ni(Pt)Si to NiSi/sub 2/ was delayed to higher temperature than the Ni/Si system without Pt as a capping- or inter-layer by more than 100/spl deg/C. The apparent Schottky barrier height of Ni(Pt)Si/n-Si(111) is modulated with the Pt content, and the electrical characteristic is good in the silicidation temperature of 500-800/spl deg/C.

关键词： Transistors Electric variables Silicidation Temperature Sputtering Solids Substrates Thermal stability Delay Schottky barriers

来源：评论

学校读者我要写书评

暂无评论

Modeling and Simulation of RLC interconnect effects with the AWE method

Modeling and Simulation of RLC interconnect effects with the...

引用

2001 6th International Conference on Solid-state and Integrated Circuit Technology(ICSICT-2001)

作者： Zhu Zhaomin Reinhard Streiter Xiao Xia Ruan Gang Hermann Wolf Thomas Otto Thomas Gessner Department of Microelectronics ASIC and System State Key LabFudan University Center of Microtechnology TU ChemnitzChemnitzD-09107Germany Fraunhofer Institute for Reliability and Microintegration Dept.Micro Devices and EquipmentChemnitzD-09126Germany

Analysis of RLC interconnect circuit models with initial conditions and non-monotone response waveforms requires a more comprehensive waveform *** is a generalized approach to approximati

ISBN: (纸本)0780365208

Analysis of RLC interconnect circuit models with initial conditions and non-monotone response waveforms requires a more comprehensive waveform *** is a generalized approach to approximati

关键词： Integrated circuit interconnections RLC circuits Delay effects Crosstalk Laplace equations Circuit simulation Timing Inductance Capacitance Vectors

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共100页 << < 91 92 93 94 95 96 97 98 99 100 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：