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17th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2024

作者： Yang, Zixin Wei, Zhichao Luo, Huanlin Wang, Jian Lai, Jinmei School of Microelectronics Fudan University State Key Laboratory of ASIC and System Shanghai201203 China Shanghai Academy of Spaceflight Technology Shanghai201109 China

ISBN: (纸本)9798350361834

Testing of the processor is crucial, which necessitates a comprehensive test set to ensure an efficient and thorough coverage. We herein propose an Equivalence Class Partitioning and Boundary Value Analysis (ECP-BVA) constrained instruction stream generation method on coverage-guided fuzzing (CGF). The updated ECP-BVA constraints mutate the instruction field to maximize the coverage metrics. The accelerated coverage-guided fuzzing skipes redundant instructions to improve the testing efficiency. An efficient test set is built by fuzzing and the experimential results indicate that our method can maximize coverage metrics close to 100% in a short time, thereby ensuring a comprehensive and efficient coverage for processor testing. © 2024 IEEE.

关键词： Equivalence classes

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Defect physics of the quasi-two-dimensional photovoltaic semiconductor GeSe

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Chinese Physics B 2022年第11期31卷 60-66页

作者： Saichao Yan Jinchen Wei Shanshan Wang Menglin Huang Yu-Ning Wu Shiyou Chen Key Laboratory of Polar Materials and Devices(MOE)and Department of Electronics East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

GeSe has recently emerged as a photovoltaic absorber material due to its attractive optical and electrical properties as well as earth abundancy and low ***,the efficiency of GeSe thin-film solar cells(TFSCs)is still low compared to the Shockley–Queisser *** defects are believed to play important roles in the electrical and optical properties of GeSe thin ***,we perform first-principles calculations to study the defect characteristics of *** results demonstrate that no matter under the Ge-rich or Se-rich condition,the Fermi level is always located near the valence band edge,leading to the p-type conductivity of undoped *** Se-rich condition,the Ge vacancy(V_(Ge))has the lowest formation energy,with a(0/2–)charge-state transition level at 0.22 eV above the valence band *** high density(above 10^(17)cm^(-3))and shallow level of VGeimply that it is the p-type origin of *** Se-rich growth condition,Seihas a low formation energy in the neutral state,but it does not introduce any defect level in the band gap,suggesting that it neither contributes to electrical conductivity nor induces non-radiative *** addition,Gei introduces a deep charge-state transition level,making it a possible recombination ***,we propose that the Se-rich condition should be adopted to fabricate high-efficiency GeSe solar cells.

关键词： GeSe bulk point defect concentration photovoltaic

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Erasable Ferroelectric Domain Wall Diodes

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Chinese Physics Letters 2021年第1期38卷 121-124页

作者： Wei Zhang Chao Wang Jian-Wei Lian Jun Jiang An-Quan Jiang State Key Laboratory of ASIC&System School of MicroelectronicsFudan UniversityShanghai 200433China

The unipolar diode-like domain wall currents in LiNbO3 single-crystal nanodevices are not only attractive in terms of their applications in nonvolatile ferroelectric domain wall memory,but also useful in half-wave and full-wave rectifier systems,as well as detector,power protection,and steady voltage *** traditional diodes,where the rectification functionality arises from the contact between n-type and p-type conductors,which are unchanged after off-line production,ferroelectric domain wall diodes can be reversibly created,erased,positioned,and shaped,using electric *** demonstrate such functionality using ferroelectric mesa-like cells,formed at the surface of an insulating X-cut LiNbO_(3) single *** the application of an in-plane electric field above a coercive field along the polar Z axis,the domain within the cell is reversed to be antiparallel to the unswitched bottom domain via the formation of a conducting domain *** wall current was rectified using two interfacial volatile domains in contact with two side Pt *** the nonvolatile inner domain wall,the interfacial domain walls disappear to turn off the wall current path after the removal of the applied electric field,or under a negative applied voltage,due to the built-in interfacial imprint *** novel devices have the potential to facilitate the random definition of diode-like elements in modern large-scale integrated circuits.

关键词： switched ferroelectric interfacial

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Monolithic Logic Units based on DCFL Structure on p-GaN platform for GaN ICs 15

Monolithic Logic Units based on DCFL Structure on p-GaN plat...

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15th IEEE International Conference on asic, asicON 2023

作者： Pan, Maolin Wang, Luyu Wang, Qiang Zhang, Penghao Wang, Yuhang Xu, Min Fudan University Shanghai State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics China

ISBN: (纸本)9798350312980

GaN-based digital integrated circuits (ICs) are constructed on the commercially available GaN-on-Si p-GaN platform. The functions of inverter, NAND, AND, NOR, and OR logic circuits are successfully realized based on direct-coupled field-effect transistor logic (DCFL) structure. Under a drive voltage of 5V and a load ratio of 20, the low output (VOL) can reach as low as 0.1V. Additionally, a functional-oriented driver is constructed. All the transient tests at frequencies up to 100 kHz exhibit excellent performance characteristics. © 2023 IEEE.

关键词： GaN-ICs Inverter NAND-AND NOR-OR p-GaN HEMT

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A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials

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Nano-Micro Letters 2025年第8期17卷 294-305页

作者： Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian College of Integrated Circuit Science and Engineering Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241People’s Republic of China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China Shaoxin Laboratory Shaoxing 312000People’s Republic of China

Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level *** the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to *** 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://***/),but not publicly confirmed,indicating that more possibilities still *** miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and *** this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and *** then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device *** these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power *** work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”*** the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power ***,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V *** work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

关键词： Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling

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Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

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Research 2024年第1期2023卷 209-236页

作者： Feng Tian Zhongya Pang Shen Hu Xueqiang Zhang Fei Wang Wei Nie Xuewen Xia Guangshi Li Hsien-Yi Hsu Qian Xu Xingli Zou Li Ji Xionggang Lu State Key Laboratory of Advanced Special Steel&Shanghai Key Laboratory of Advanced Ferrometallurgy&School of Materials Science and Engineering Shanghai University99#Shangda RoadShanghai 200444China Center for Hydrogen Metallurgy Technology Shanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System School of MicroelectronicsFudan University220#Handan RoadShanghai 200433China School of Energy and Environment Department of Materials Science and EngineeringCity University of Hong KongKowloon TongHong KongChina

Sustainable and low-carbon-emission silicon production is currently one of the main focuses for the metallurgical and materials science ***,considered a promising strategy,has been explored to produce silicon due to prominent advantages:(a)high electricity utilization efficiency;(b)low-cost silica as a raw material;and(c)tunable morphologies and structures,including films,nanowires,and *** review begins with a summary of early research on the extraction of silicon by *** has been placed on the electro-deoxidation and dissolution–electrodeposition of silica in chloride molten salts since the 21st century,including the basic reaction mechanisms,the fabrication of photoactive Si films for solar cells,the design and production of nanoSi and various silicon components for energy conversion,as well as storage ***,the feasibility of silicon electrodeposition in room-temperature ionic liquids and its unique opportunities are *** this basis,the challenges and future research directions for silicon electrochemical production strategies are proposed and discussed,which are essential to achieve large-scale sustainable production of silicon by electrochemistry.

关键词： directions electrodeposition electricity

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A high-speed 2D optoelectronic in-memory computing device with 6-bit storage and pattern recognition capabilities

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Nano Research 2022年第3期15卷 2472-2478页

作者： Jialin Meng Tianyu Wang Zhenyu He Qingxuan Li Hao Zhu Li Ji Lin Chen Qingqing Sun David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center No.825 Zhangheng RoadShanghai 201203China

The explosively developed era of big-data compels the increasing demand of nonvolatile memory with high efficiency and excellent storage ***,we fabricated a high-speed photoelectric multilevel memory device for neuromorphic *** novel two-dimensional(2D)MoSSe with a unique Janus structure was employed as the channel,and the stack of Al_(2)O_(3)/black phosphorus quantum dots(BPQDs)/Al_(2)O_(3)was adopted as the *** storage performance of the resulting memory could be verified by the endurance and retention tests,in which the device could remain stable states of programming and erasing even after 1,000 cycles and 1,000 *** multibit storage could be realized through both different voltage amplitudes and pulse numbers,which could achieve 6 bits(64 distinguishable levels)under pulse width of 50 ***,our memory device also could realize the simulations of synapses in human brain with optical and electric modulations synergistically,such as excitatory post-synaptic current(EPSC),long-term potentiation/depression(LTP/LTD),and spike-timing-dependent plasticity(STDP).Neuromorphic computing was successfully achieved through a high recognition of handwritten digits up to 92.5%after 103 *** research is a promising avenue for the future development of efficient memory and artificial neural network systems.

关键词： memory multibit two-dimensional(2D) MoSSe Co-modulation

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Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation

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Light(Science & Applications) 2024年第11期13卷 2812-2823页

作者： Zhen Wang Chunhua Tan Meng Peng Yiye Yu Fang Zhong Peng Wang Ting He Yang Wang Zhenhan Zhang Runzhang Xie Fang Wang Shuijin He Peng Zhou Weida Hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaiChina State Key Laboratory of ASIC and System Department of MicroelectronicsFudan UniversityShanghaiChina University of Chinese Academy of Sciences BeijingChina School of Life Science and Technology ShanghaiTech UniversityShanghaiChina School of Mathematical and Physical Sciences Wuhan Textile UniversityWuhanChina Shanghai Clinical Research and Trial Center ShanghaiChina

Given the surpassing of the Shockley-Quiesser efficiency limit in conventional p-n junction photovoltaic effect,bulk photovoltaic effect(BPVE)has garnered significant research ***,the BPVE primarily focuses on a narrow wavelength range,limiting its potential *** we report a giant infrared bulk photovoltaic effect in tellurene(Te)for broad-spectrum *** generated photocurrent in uniformly illuminated Te excludes other photoelectric effects and is attributed to the *** bulk photovoltaic wavelength in Te spans a wide range from the ultraviolet(390 nm)to the mid-infrared(3.8μm).Moreover,the photocurrent density of 70.4 A cm^(−2) under infrared light simulation outperforms that in previous ultraviolet and visible semiconductors as well as infrared *** attached to the dendrites or somata of the cortical neurons successfully elicit action potentials under broad-spectrum light *** work lays the foundation for the further development of infrared BPVE in narrow bandgap materials.

关键词： effect spectrum ultraviolet

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Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors

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Science China(Information Sciences) 2023年第2期66卷 227-236页

作者： Guodong QI Xinyu CHEN Guangxi HU Peng ZHOU Wenzhong BAO Ye LU State Key Laboratory of ASIC and System School of Information Science and TechnologyFudan University State Key Laboratory of ASIC and System School of Microelectronics Fudan University Zhangjiang Fudan International Innovation Center Fudan University

As the traditional scaling of silicon metal-oxide-semiconductor field-effect transistors（MOSFETs） reaches its physical limit, research efforts on novel semiconductor devices are increasingly desired. To enable the joint optimization of early-stage circuit design and process of novel devices, the rapid creation of an accurate compact model of these devices with the capability to cover process variations is required. In this work, a knowledge-based neural network（KNN） modeling method is proposed. This method separates the geometrical variables from the other input variables of the device, where the geometrical variables are modeled with physics-based analytical equations, while the remaining part is modeled by an artificial neural network. The KNN model takes advantage of the automated numerical fitting capability of the neural network and the geometrical scalability from device physics. The created KNN model is first validated with silicon MOSFET data from the industry standard BSIM6 and shows more than 20% accuracy improvement as compared with the traditional neural network model. Furthermore, MoS2field-effect transistors and circuits,such as ring oscillators, standard cells, and logic functional circuits, are experimentally fabricated for model verification. The results show that the KNN model is capable of predicting the electrical characteristics of devices beyond the measurement geometry and facilitates the accurate simulations of statistical circuits with respect to experimental data. This work paves the way for future circuit designs and simulations of novel semiconductor devices.

关键词： knowledge-based neural network MOSFET 2D material FETs Monte Carlo simulations circuit benchmark

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Ferroelectric artificial synapse for neuromorphic computing and flexible applications

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Fundamental Research 2023年第6期3卷 960-966页

作者： Qing-Xuan Li Yi-Lun Liu Yuan-Yuan Cao Tian-Yu Wang Hao Zhu Li Ji Wen-Jun Liu Qing-Qing Sun David Wei Zhang Lin Chen State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center No.825 Zhangheng RoadShanghai 201203China

Research of artificial synapses is increasing in popularity with the development of bioelectronics and the appearance of wearable *** the high-temperature treatment process of inorganic materials is not compatible with flexible substrates,organic ferroelectric materials that are easier to process have emerged as *** organic synaptic device based on P(VDF-TrFE)was prepared in this *** device showed reliable P/E endurance over 104 cycles and a data storage retention capability at 80℃ over 104 ***,it possessed excellent synaptic functions,including short-term/long-term synaptic plasticity and spike-timing-dependent *** addition,the ferroelectric performance of the device remained stable even under bending(7 mm bending radius)or after 500 bending *** work shows that low-temperature processed organic ferroelectric materials can provide new ideas for the future development of wearable electronics and flexible artificial synapses.

关键词： Organic artificial synapse Neuromorphic computing Synaptic devices Wearable electronics Ferroelectric

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