检索结果-内蒙古大学图书馆

Chinese Materials Conference 2022-2023

作者： Zhang, Jie Sun, Mingmei Du, Shijie Xie, Zhongnan Guo, Hong State Key Laboratory of Nonferrous Metals and Processes GRINM Group Co. Ltd. China Institute for Advanced Materials and Technology University of Science and Technology Beijing100083 China GRIMAT Engineering Institute Co. Ltd. China General Research Institute for Nonferrous Metals China

To enhance the heat transfer performance of GaInSn liquid metal, a new type of composite thermal interface material with GaInSn as thermal conductive matrix and silver-coated copper particles as thermal conductive fillers was prepared in this article. The morphology of the composites were characterized by scanning electron microscopy. The thermal conductivity of silver-coated copper/GaInSn composites with different silver-coated copper particle contents were measured by laser flash method. The interfacial bonding of the composites were investigated by X-ray diffraction. The results show that when the volume ratio of silver-coated copper particles is 15%, thermal conductivity of the silver-coated copper/GaInSn composite reaches the largest value of 25.01 W·m-1·K-1. The silver-coated copper/GaInSn composite material and commercially available thermal grease were put into the chip and copper plate to simulate the actual application scenarios for comparison. The heat dissipation capacity of silver-coated copper/GaInSn composite material is obviously better than that of the two commercially available thermal grease, and the chip temperature can be reduced by about 5°C. © Published under licence by IOP Publishing Ltd.

关键词： Tin alloys

来源：评论

学校读者我要写书评

暂无评论

电场可逆调控二维单层氧化物磁电性能研究

引用

Science Bulletin 2023年第15期68卷 1632-1639,M0004页

作者：王国鹏胡涛熊奕敏刘学沈胜春王建林车梦倩崔璋璋张莹莹杨鲁懿李正操陆亚林田明亮 School of Physics and Optoelectronics Engineering Anhui UniversityHefei 230601China Hefei National Laboratory Hefei 230028China Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China Department of Physics University of Science and Technology of ChinaHefei 230026China Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 230026China Anhui Laboratory of Advanced Photon Science and Technology University of Science and Technology of ChinaHefei 230026China State Key Laboratory of Low Dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China State Key Laboratory for New Ceramics and Fine Processing Key Laboratory of Advanced Materials of Ministry of EducationSchool of Materials Science and EngineeringTsinghua UniversityBeijing 100084China

具有原子层厚度的氧化物磁性材料拥有将二维磁性应用到下一代自旋电子学新兴领域的巨大潜力,引起了研究者的广泛关注.因此,实现二维单层氧化物磁、电性能的磁场和电场调控,为未来低功耗自旋电子器件提供了广阔应用前景.然而,电场调控二... 详细信息

具有原子层厚度的氧化物磁性材料拥有将二维磁性应用到下一代自旋电子学新兴领域的巨大潜力,引起了研究者的广泛关注.因此,实现二维单层氧化物磁、电性能的磁场和电场调控,为未来低功耗自旋电子器件提供了广阔应用前景.然而,电场调控二维单层氧化物磁性报道很少.本工作利用离子液体门电压进行质子掺杂,实现了对二维单层氧化物(SrRuO_(3))_(1)/(SrTiO_(3))_(N)(N=1,3)磁、电性能的电场可逆调控.随着质子掺杂浓度提高,在(SrRuO_(3))_(1)/(SrTiO_(3))_(1)中观察到了从铁磁金属到反铁磁绝缘态相变,并伴随着磁各向异性的转变.理论分析表明,质子掺杂引起的能带结构改变是结构和磁、电性能相变的主要原因.同时,SrTiO_(3)层起到质子筛作用,在质子的演化过程中扮演重要角色.该研究通过电场调控二维单层氧化物的结构和物性,为实现材料的多功能性提供了重要思路,同时也为实现低功耗功能器件提供了应用潜力.

关键词： Electric-field control 2D oxide monolayer magnets Magnetic transition Proton sieve

来源：评论

学校读者我要写书评

暂无评论

Effects of surface integrity on wear resistance of 42CrMo steel subjected to ultrasonic shot peening

引用

Journal of Manufacturing Processes 2025年 149卷 679-696页

作者： Wang, Cheng Chen, Long Hu, Shengyang Xi, Yinhu Zhang, Haohao Tian, Konghu Fei, Shuhui Deng, Haishun Shen, Gang School of Mechatronics Engineering Anhui University of Science and Technology Huainan232001 China State Key Laboratory of Mechanical Transmission for Advanced Equipment Chongqing University 400030 China Analytical and testing center Anhui University of Science and Technology Huainan232001 China

To enhance the wear resistance of 42CrMo steel, ultrasonic shot peening (USP) was strategically employed as a surface modification technique to improve the material surface integrity. A systematic investigation was conducted, beginning with the comprehensive surface characterization of the USP-treated specimens, including the quantitative analysis of surface roughness, surface residual stress field, microhardness gradient, grain refinement characteristics, and microstructural transformations. The tribological behavior was then studied through the controlled dry sliding friction and wear tests, with particular emphasis on the coefficient of friction (COF) and specific wear rate under varying operational conditions (normal loads of 10 N and 20 N, sliding speeds of πm/min and 2πm/min). The experimental results demonstrate that USP treatment using 6 mm-diameter shots converts the surface tensile residual stresses into surface compressive residual stresses, improves the maximum microhardness by 56 %, while significantly increases surface roughness. These surface modifications lead to the reduction of COF and specific wear rate by 15 % and 34 % under the dry sliding condition of 10 N normal load and πm/min sliding speed. SEM was utilized to characterize wear mechanisms through the detailed analysis on the worn surface morphologies, and found that the enhancement of wear resistance by USP is attributed to the transition in wear mechanism from predominant adhesive wear in the as-received specimen to primarily abrasive wear in the USP-treated specimen. The study establishes the correlation between USP-induced surface integrity enhancement and the improved wear resistance, supported by mechanistic analysis of surface strengthening mechanisms. These findings provide fundamental insights into the wear-resistant mechanisms of USP-treated 42CrMo steel, offering a valuable guidance for surface engineering applications in industrial components subjected to severe wear conditions. ©

关键词： Etching

来源：评论

学校读者我要写书评

暂无评论

Strong electron–phonon coupling influences carrier transport and thermoelectric performances in group-IV/V elemental monolayers

引用

npj Computational Materials 2021年第1期7卷 1287-1298页

作者： Yu Wu Bowen Hou Ying Chen Jiang Cao Hezhu Shao Yiming Zhang Congcong Ma Heyuan Zhu Rongjun Zhang Hao Zhang Key Laboratory of Micro and Nano Photonic Structures(MOE)and Key Laboratory for Information Science of Electromagnetic Waves(MOE)and Department of Optical Science and Engineering School of Information Science and TechnologyFudan UniversityShanghaiChina Department of Light Sources and Illuminating Engineering School of Information Science and TechnologyFudan UniversityShanghaiChina School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjingChina College of Electrical and Electronic Engineering Wenzhou UniversityWenzhouChina Yiwu Research Institute of Fudan University Yiwu CityZhejiangChina Nanjing University National Laboratory of Solid State MicrostructureNanjingChina

The interactions between electrons and phonons play the key role in determining the carrier transport properties in *** this work,comprehensive investigations on full electron–phonon(el–ph)couplings and their influences on carrier mobility and thermoelectric(TE)performances of 2D group IV and V elemental monolayers are performed,and we also analyze the selection rules on el–ph couplings using group *** shallow n/p-dopings in Si,Ge,and Sn,ZA/TA/LO phonon modes dominate the intervalley *** strong intervalley scatterings via ZA/TO phonon modes can be identified for CBM electrons in P,As,and Sb,and for VBM holes,ZA/TA phonon modes dominate intervalley scatterings in P while LA phonons dominate intravalley scatterings in As and *** considering full el–ph couplings,the TE performance for these two series of monolayers are predicted,which seriously downgrades the thermoelectric figures of merits compared with those predicted by the constant relaxation time approximation.

关键词： theory phonon coupling

来源：评论

学校读者我要写书评

暂无评论

Roles of non-axisymmetric perturbations in free drift vertical displacement events on EAST

arXiv

引用

arXiv 2024年

作者： Li, Haolong Zhu, Ping Li, Hang Wu, Muquan Zhu, Xiang Luo, Jingting College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen518060 China State Key Laboratory of Advanced Electromagnetic Technology International Joint Research Laboratory of Magnetic Confinement Fusion and Plasma Physics School of Electrical and Electronic Engineering Huazhong University of Science and Technology Wuhan430074 China Department of Nuclear Engineering and Engineering Physics University of Wisconsin-Madison MadisonWI53706 United States Advanced Energy Research Center Shenzhen University Shenzhen518060 China

The safe operation of most tokamaks, especially the largen sized ones, rely on the feedback control of the vertical displacement events (VDEs). However, most these feedback control systems are based on the axisymmetric VDE models. In this work, we use NIMROD simulations to study the roles of non-axisymmetric perturbations in free drift vertical displacement events on EAST. The high-n modes in non-axisymmetric VDE grow first, which drive the formation of high-n magnetic island chains. Subsequently, the magnetic island chains grow and overlap with each other, leading to the destruction of the magnetic flux surface, which induces a minor disruption and accelerates the start of the following major disruption. The magnetic island and the stochastic magnetic field allow the toroidally asymmetric poloidal plasma current to jet towards the hoop force direction, forming the finger and filamentary structures. Such a plasma current asymmetry strongly depends on the anisotropy in thermal transport coefficients. Copyright © 2024, The Authors. All rights reserved.

关键词： Feedback control

来源：评论

学校读者我要写书评

暂无评论

On the accurate characterization of quantum-dot light-emitting diodes for display applications

引用

npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

来源：评论

学校读者我要写书评

暂无评论

Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs

引用

Chinese Physics B 2021年第4期30卷 610-615页

作者： Xi-Ming Chen Bang-Bing Shi Xuan Li Huai-Yun Fan Chen-Zhan Li Xiao-Chuan Deng Hai-Hui Luo Yu-Dong Wu Bo Zhang School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Advanced Power Semiconductor Devices Zhuzhou CRRC Times Semiconductor Company Ltd.Zhuzhou 412001China

In order to investigate the characteristics and mechanisms of subthreshold voltage hysteresis(ΔV_(th,sub)) of 4 H-SiC metal-oxide-semiconductor field-effect transistors(MOSFETs),4 H-SiC planar and trench MOSFETs and corresponding P-type planar and trench metal-oxide-semiconductor(MOS) capacitors are fabricated and *** with planar MOSFEF,the trench MOSFET shows hardly larger ΔV_(th,sub) in wide temperature range from 25 0 C to 300 0 *** operating temperature range is from 25 ℃ to 300 ℃,the off-state negative V_(gs) of planar and trench MOSFETs should be safely above-4 V and-2 V,respectively,to alleviate the effect of ΔV_(th,sub) on the normal *** the help of P-type planar and trench MOS capacitors,it is confirmed that the obvious ΔV_(th,sub) of 4 H-SiC MOSFET originates from the high density of the hole interface traps between intrinsic Fermi energy level(E_(i)) and valence band(E_(v)).The maximumΔV_(th,sub) of trench MOSFET is about twelve times larger than that of planar MOSFET,owing to higher density of interface states(D_(it)) between E_(i) and E_(v).These research results will be very helpful for the application of 4 H-SiC MOSFET and the improvement of ΔV_(th,sub) of 4 H-SiC MOSFET,especially in 4 H-SiC trench MOSFET.

关键词： 4H-SiC MOSFET subthreshold voltage hysteresis P-type MOS capacitor density of interface states

来源：评论

学校读者我要写书评

暂无评论

Numerical simulation of circulating fluidization roasting desulfurization of high-sulfur bauxite based on computational particle fluid dynamics method

引用

Chinese Journal of Chemical engineering 2025年 82卷 138-152页

作者： Fan, Langfeng Xie, Chengming Wei, Qijin Zhao, Hongliang Li, Rongbin Zhang, Yongmin Liu, Fengqin Sohn, Hong Yong State Key Laboratory of Advanced Metallurgy University of Science and Technology Beijing Beijing100083 China School of Metallurgical and Ecological Engineering University of Science and Technology Beijing Beijing100083 China BGRIMM Technology Group Beijing100160 China State Key Laboratory of Heavy Oil Processing China University of Petroleum Beijing102249 China Department of Materials Science and Engineering The University of Utah Salt Lake CityUT84112 United States

As a pyrometallurgical process, circulating fluidized bed (CFB) roasting has good potential for application in desulfurization of high-sulfur bauxite. The gas–solid distribution and reaction during CFB roasting of high-sulfur bauxite were simulated using the computational particle fluid dynamics (CPFD) method. The effect of primary air flow velocity on particle velocity, particle volume distribution, furnace temperature distribution and pressure distribution were investigated. Under the condition of the same total flow of natural gas, the impact of the number of inlets on the desulfurization efficiency, atmosphere mass fraction distribution and temperature distribution in the furnace was further investigated. © 2025 Chemical Industry and engineering Society of China, and Chemical Industry Press Co., Ltd.

关键词： Chemical industry

来源：评论

学校读者我要写书评

暂无评论

Lithiophilic N-doped carbon bowls induced Li deposition in layered graphene film for advanced lithium metal batteries

引用

Nano Research 2022年第1期15卷 352-360页

作者： Xiaoyu Feng Hong-Hui Wu Biao Gao Michai Swietostawski Xin He Qiaobao Zhang Department of Materials Science and Engineering College of MaterialsXiamen UniversityXiamen 361005China The State Key Laboratory of Refractories and Metallurgy and Institute of Advanced Materials and Nanotechnology Wuhan University oj Science and TechnologyWuhan 430081y China School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China Faculty of Chemistry Jagiellonian Universityul.Gronostajowa 230-387 KrakowPoland School of Chemical Engineering Sichuan UniversityChengdu 610065China

Lithium(Li)metal with high theoretical capacity and low electrochemical potential is the most ideal anode for next-generation high-energy ***,the practical implementation of Li anode has been hindered by dendritic growth and volume expansion during cycling,which results in low Coulombic efficiency(CE),short lifespan,and safety ***,we report a highly stable and dendrite-free Li metal anode by utilizing N-doped hollow porous bowl-like hard carbon/reduced graphene nanosheets(CB@rGO)hybrids as three-dimensional(3D)conductive and lithiophilic scaffold *** lithiophilic carbon bowl(CB)mainly works as excellent guides during the Li plating process,whereas the rGO layer with high conductivity and mechanical stability maintains the integrity of the composite by confining the volume change in long-range order during ***,the local current density can be reduced due to the 3D conductive ***,CB@rGO presents a low lithium metal nucleation overpotential of 18 mV,high CE of 98%,and stable cycling without obvious voltage fluctuation for over 600 cycles at a current density of 1 mA cm^(-2).Our study not only provides a good CB@rGO host and pre-Lithiated CB@rGO composite anode electrode,but also brings a new strategy of designing 3D electrodes for those active materials suffering from severe volume expansion.

关键词： dendrite inhibition Li metal host lithium metal battery bowl-like carbon/reduced graphene nanosheets hybrids

来源：评论

学校读者我要写书评

暂无评论

Paleozoic post-collisional magmatism and high-temperature granulite-facies metamorphism coupling with lithospheric delamination of the East Kunlun Orogenic Belt,NW China

引用

Geoscience Frontiers 2022年第1期13卷 96-113页

作者： Qian Wang Jiao Zhao Chuanlin Zhang Shengyao Yu Xiantao Ye Xiaoqiang Liu College of Earth Science and Engineering Shandong University of Science and TechnologyQingdao 266590China Key Laboratory of Marine Geology and Environment Institute of OceanologyChinese Academy of SciencesQingdao 266071China State Key Laboratory of Nuclear Resources and Environment East China University of TechnologyNanchang 330013China College of Oceanography Hohai UniversityNanjing 210098China Key Lab of Submarine Geosciences and Prospecting Techniques MOEInstitute for Advanced Ocean StudyCollege of Marine GeosciencesOcean University of ChinaQingdao 266100China

Lithosphere extension and upwelling of asthenosphere at post-collisional stage of an orogenic cycle generally induce diverse magmatism and/or associated high-temperature metamorphism. Nevertheless, the intimate coexistence of post-collisional magmatic activity and high-temperature metamorphism is *** this contribution, a lithological assemblage composing of diverse magmatic rocks deriving from distinct magma sources and coeval high-temperature metamorphism was identified in eastern ***, ages, mineral chemistry and whole-rock geochemistry demonstrated that those intimately coexistent diverse rocks were genetically related to post-collisional extension. The garnet-bearing mafic granulites in Jinshuikou area interior of the East Kunlun Orogenic Belt are mainly composed of garnet,orthopyroxene, and plagioclase, with peak metamorphic P–T conditions of ~ 701–756 ℃and 5.6–7.0 kbar,representing a granulite-facies metamorphism at 409.7 ± 1.7 Ma. The diverse contemporaneous magmatic rocks including hornblendites, gabbros and granites yield zircon U–Pb ages of 408.6 ± 2.5 Ma,413.4 ± 4.6 Ma, and 387–407 Ma, respectively. The hornblendites show N-MORB-like REE patterns with(La/Sm)Nvalues of 0.85–0.94. They have positive zircon εHf(t) values of 0.1–4.9 and whole-rock εNd(t) values of 3.9–4.7 but relatively high(^(87)Sr/^(86)Sr)_(i)values of 0.7081 to 0.7088. These features demonstrate that the hornblendites derived from a depleted asthenospheric mantle source with minor continental crustal materials in source. As for the gabbros, they exhibit arc-like elemental signatures, low zircon εHf(t) values(-4.3 to 2.5) and variable whole-rock εNd(t) values(-4.9 to 1.2) as well as high(^(87)Sr/86 Sr)ivalues(0.7068 to 0.7126), arguing for that they were originated from partial melting of heterogeneous lithospheric mantle anteriorly metasomatized by subducted-sediment released melts. Geochemistry of the granites defines their strongly peraluminous S-type signatures. Zircon

关键词： East Kunlun orogenic belt Post-collisional extensional collapse Magmatism High-temperature metamorphism Crust-mantle interaction

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：