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International Conference on Information Systems and Computer Aided Education (ICISCAE)

作者： Shaoxian Xia Hongshu Ye Xin Xia Binbin Xue Kewen Yang Yuhua Lu State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology Beijing Smart-Chip Microelectronics Technology Co. Ltd. Beijing China

ISBN: (数字)9781728130668

ISBN: (纸本)9781728130675

power distribution operation involves the supervision and control of the operating states of a large distribution power grid. This technology includes several features, e.g. an abundant amount of application nodes, diversity of communication channels, etc. To accelerate the construction of state grid-electric Internet of things and to guarantee the security of power grids data network and to consider the feature of power grids, a synthetic key management system is proposed. In the first section of this paper, from the perspective of maturity and practicality of related technology, the feasibility of combining quantum private communication and automatic power grid key management system is analyzed and demonstrated. In the next section, a key-management method, which is designed to combine quantum private communication technology and interaction with encryption devices, is designed and implemented. In the concluding section, to guarantee the integrity and atomicity in key storage processes and to achieve the quantum key storage, rollback mechanism of large-capacity quantum key storage is studied and discussed.

关键词： Ciphers Encryption power distribution Authentication

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Fabrication of a temperature sensor for monitoring the temperature of smart meter terminals

Fabrication of a temperature sensor for monitoring the tempe...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Shuaipeng Wang Haifeng Zhang Dongyan Zhao Zhen Fu Yanning Chen Yidong Yuan Yubo Wang State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology Beijing Smart-Chip Microelectronics Technology Co. Ltd. Beijing China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

smart meter terminals are some of the most familiar monitoring unit. As recent research because of poor contact, aging, corrosion and other factors, the terminal of smart meter will cause heat, and eventually lead to the burnout of the ***. In this paper, we summarize how NTC temperature sensors can be operated, and their working principle is presented. Then the thermal of the smart meter is simulated by computer and we also discuss the advantages of this sensor.

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Performance Analysis of IEEE 802.15.4g MR-OFDM with Frequency Offset

Performance Analysis of IEEE 802.15.4g MR-OFDM with Frequenc...

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International Conference on Communication technology (ICCT)

作者： Jichao Liu Yahong Zhao Ji Yang Xiaoke Tang State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology Beijing Smart-Chip Microelectronics Technology Co. Ltd. Beijing China

IEEE 802.15.4g Standard specifies multi-rate and multi-regional orthogonal frequency division multiplexing (MR-OFDM) physical layer, which supports principally outdoor, low-data-rate, wireless, smart metering utility network (SUN). Caused by Doppler frequency shift of fading channel, the inter-channel interference (ICI) arises in MROFDM system. In this paper, the degrading of performance due to ICI for detection of phase shift keying modulation signal is provided. It is derived that non-ideal properties for reception symbols are characterized by sampling offset and phase shift on subcarrier. Furthermore, the influence on data demodulation under different conditions is analyzed in detail. Simulation results are consistent with the theoretical analysis.

关键词： OFDM Frequency modulation Phase shift keying Doppler effect Frequency-domain analysis IEEE 802.15 Standard Demodulation

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Comparative Study on Temporary Blocking Strategies of Converter Valve in MMC-based DC grid with Overhead transmission Line

Comparative Study on Temporary Blocking Strategies of Conver...

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IEEE Electronic power grid (egrid)

作者： Yijia Yuan Ming Kong Xue Bai Yali Liu Jie Yang Yanan Wu HVDC Center State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute of SGCC Beijing China HVDC Technology Research Center Nari Group (State Grid Electric Power Research Institute) Co. Ltd Beijing China

ISBN: (数字)9781728157047

ISBN: (纸本)9781728157054

Compared with the AC grid, DC grid based on Modular Multilevel Converter (MMC) with overhead transmission line has problems such as faster development of fault current and wider range of fault influence. To ensure the safety of the converter valve and the continuous operation of the system, blocking the converter valve temporarily is usually necessary. Three blocking schemes can be used according to the range of blocking, i.e. global temporary blocking, phase-based temporary blocking and arm-based blocking. Based on a four-terminal DC grid model, the strategies are compared and analyzed from the perspectives of the safety of the converter valve, the impact on the system under fault ride through, and on the fluctuation of internal circulating current. The results show that global blocking is easy to implement but the system may become uncontrollable, arm-based blocking will cause less fluctuations in system under fault ride through, and it has a better fault recovery performance. The research results can provide reference to the strategy design for the projects with similar operation requirements.

关键词： Valves Circuit faults HVDC transmission Capacitors Fault currents Voltage control Insulated gate bipolar transistors

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Behavior of SiC MOSFET under Short-Circuit during the On-state

Behavior of SiC MOSFET under Short-Circuit during the On-Sta...

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2018 International Conference on advanced Electronic Materials, Computers and Materials Engineering, AEMCME 2018

作者： Cui, Meiting Li, Jinyuan Du, Yujie Zhao, Zhibin State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute of State Grid Corporation of China Beijing102209 China State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing102206 China

This paper presents behavior of SiC MOSFET under short-circuit during the on-state conditions. Although much research has been conducted on the short-circuit characteristics of the first type of SiC MOSFETs, no paper has reported the second type. A set of test benchs which can perform the second type of short-circuit are designed. Simulation by LTspice combined with experiments are conducted to evaluate the influences of several important parameters like miller capacitance, gate resistance, gate-source voltage, drain-source voltage on the second type of short-circuit characteristics of 1200 V/36 A SiC MOSFET. © Published under licence by IOP Publishing Ltd.

关键词： Capacitance

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Analysis of transient current distribution characteristics of Press Pack IGBT

Analysis of transient current distribution characteristics o...

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2018 International Conference on Civil and Hydraulic Engineering, IConCHE 2018

作者： Li, Jinyuan Li, Yaosheng Wang, Peng Zhao, Zhibin State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute of State Grid Corporation of China Beijing102209 China State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing102206 China

In the switching process of Press Pack IGBT (PPI) module, the phenomenon of nonuniform current distribution invariably happens which reduce the reliability and life time of chips and the module. The uneven current distribution would be caused by some physical reasons such as the clamp force, the temperature;and the electrical reasons including the parasitic inductance of the emitter pillars, the parasitic resistance of the gate connector and the difference of the paralleled chips characteristic, etc. Based on the modeling of two disparate module structures, the parasitic parameter of the emitter pillars and gate connector is extracted in this paper. Then the different equivalent circuits of PPI module are built due to the researches in different factors with the Synopsys Saber software. At last, by comparing the influence of two modules indifferent factors, the simulation results prove the relationship between the pillars distribution and the chip switching losses. © Published under licence by IOP Publishing Ltd.

关键词： Insulated gate bipolar transistors (IGBT)

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key stress extraction and equivalent test method for hybrid DC circuit breaker

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Global Energy Interconnection 2018年第1期1卷 29-38页

作者： Chong Gao Xiao Ding Guangfu Tang Gaoyong Wang Peng Qiu Global Energy Interconnection Research Institute Changping DistrictBeijing 102200China State Key Laboratory of Advanced Power Transmission Technology Changping DistrictBeijing 102200China Electric Power Research Institute of State Grid Zhejiang Electric Power Company Hangzhou 310014China

Firstly, relevant stress properties of millisecond level breaking process and microsecond level commutation process of hybrid HVDC circuit breaker are studied in detail on the basis of the analysis for the application environment and topological structure and operating principles of hybrid circuit breakers, and key stress parameters in transient state process of two time dimensions are extracted. The established digital simulation circuit for PSCAD/EMTDC device-level operation of the circuit breaker has verified the stress properties of millisecond level breaking process and microsecond level commutation process. Then, equivalent test method, circuits and parameters based on LC power supply are proposed on the basis of stress extraction. Finally, the results of implemented breaking tests for complete 200 kV circuit breaker, 100 kV and 50 kV circuit breaker units, as well as single power electronic module have verified the accuracy of the simulation circuit and mathematical analysis. The result of this paper can be a guide to electrical structure and test system design of hybrid HVDC circuit breaker.

关键词： MMC-HVDC IGBT series valve Hybrid DC circuit breaker Stress Equivalence Test method

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Study on the Issue of Electric Field Concentration in Submodule of Press Pack IGBT

Study on the Issue of Electric Field Concentration in Submod...

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2018 International Conference on Civil and Hydraulic Engineering, IConCHE 2018

作者： Li, Jinyuan Chen, Zhongyuan Tang, Xinling Junda, Sun Zhao, Zhibin State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute of State Grid Corporation of China Beijing102209 China State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University Beijing102206 China

There is a phenomenon that the chips of press pack IGBT (Insulated Gate Bipolar Transistor) meet the requirements of withstand voltage test, but ignition sometimes occurred in the submodules of the same kind of press pack IGBT during the test. In response to this situation, this paper firstly analyzed that the difference of submodules frame lead to different level of electric field concentration. In this paper, quantitative conclusions have been drawed by modeling and simulation of the actual situation in COMSOL Multiphysics the multiphysics finite element simulation software. © Published under licence by IOP Publishing Ltd.

关键词： Electric fields

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Study on the dc flashover performance of standard suspension insulator with ringshaped non-uniform pollution

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High Voltage 2018年第2期3卷 133-139页

作者： Zhijin Zhang Jiayao Zhao Dongdong Zhang Xingliang Jiang Yongfu Li Bin Wu Jian Wu State Key Laboratory of Power Transmission Equipment&System Security and New Technology Chongqing UniversityShapingba DistrictChongqing 400044People's Republic of China State Grid Chongqing Electric Power Co. Yuzhong DistrictChongqing 401121People's Republic of China

Under dc electric field,pollution may be more easily deposited around insulator string caps and pins,distributing non-uniformly on its inner and outer parts,and presenting ring-like *** Flashover tests of 7-unit XHP-160 insulator string were carried *** the tests,the ring-shaped non-uniform pollution was simulated using solid-layer method by changing the ratio I/O of inner-to-outer surface salt deposit density(SDD)and radius(r)of the heavily polluted area(the inner part).On the basis of the test data,the effects of ring-shaped non-uniform pollution on dc flashover characteristics were ***,the relative variation trend of flashover voltage,surface pollution layer resistance,and leakage current were *** results show that the ratio I/O affects the dc flashover performance of the insulator *** flashover voltage increases with the increase of I/*** the increase of the radius r,the flashover voltage will increase at first and then *** ring-shaped non-uniform pollution,surface pollution layer resistance of insulator will increase,which results in lower leakage current and higher flashover *** results will be of certain value in providing references for outdoor insulation selection.

关键词： pollution flash insulator

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Research on Control Strategy of Asymmetric Faults on AC Side of Flexible Multi-state Switch

Research on Control Strategy of Asymmetric Faults on AC Side...

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International Conference on advanced power System Automation and Protection (APAP)

作者： Cao Chengsha Song Jieying Lu Zhengang Wang Chaoliang Xu Feng Gao Zemeng Zhang Yifan State Key Laboratory of Advanced Transmission Technology Global Energy Interconnection Research Institute Co. Ltd. Beijing China State Grid Zhejiang Electric Power Co. Ltd. Research Institute State Grid Zhejiang Electric Power Co. Ltd. Zhejiang China North China Electric Power University Beijing China

ISBN: (数字)9781728117225

ISBN: (纸本)9781728117232

The asymmetric faults occur on the AC side of flexible multi-state switch endangers the normal operation of the converter. To solve this problem, a fast decomposition algorithm of sequence components and an improved negative sequence current suppression strategy are proposed based on the four-terminal interconnected topology of flexible multi-state switch. The method can quickly and effectively suppress the negative sequence current at AC side, limit the amplitude of three-phase current, keep three-phase symmetrical operation, and control the power and the double fundamental frequency fluctuation of the DC voltage. PSCAD simulation software is applied to verify the effectiveness and accuracy of the proposed method.

关键词： Mathematical model Switches Reactive power Circuit faults Transient analysis Topology Fluctuations

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