This paper reports that the nanostructured β-FeSi2 bulk materials are prepared by a new synthesis process by combining melt spinning (MS) and subsequent spark plasma sintering (SPS). It investigates the influence...
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This paper reports that the nanostructured β-FeSi2 bulk materials are prepared by a new synthesis process by combining melt spinning (MS) and subsequent spark plasma sintering (SPS). It investigates the influence of linear speed of the rolling copper wheel, injection pressure and SPS regime on microstructure and phase composition of the rapidly solidified ribbons after MS and bulk production respectively, and discusses the effects of the microstructure on thermal transport properties. There are two crystalline phases (α-Fe2Si5 and ε-FeSi) in the rapidly solidified ribbons; the crystal grains become smaller when the cooling rate increases (the 20 nm minimum crystal of ε-FeSi is obtained). Having been sintered for 1 min above 1123K and annealed for 5min at 923K, the single-phase nanostructured β- FeSi2 bulk materials with 200-500 nm grain size and 98% relative density are obtained. The microstructure of β-FeSi2 has great effect on thermal transport properties. With decreasing sintering temperature, the grain size decreases, the thermal conductivity of β-FeSi2 is reduced remarkably. The thermal conductivity of β-FeSi2 decreases notably (reduced 72% at room temperature) in comparison with the β-FeSi2 prepared by traditional casting method.
Pristine GeTe shows inferior thermoelectric performance around unit due to the large carrier concentration induced by the presence of intrinsic high concentration of Ge vacancy. In this study, we report a thermoelectr...
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Pristine GeTe shows inferior thermoelectric performance around unit due to the large carrier concentration induced by the presence of intrinsic high concentration of Ge vacancy. In this study, we report a thermoelectric figure of merit ZT of 1.56 at 700 K, realized in Sb-doped GeTe based thermoelectric(TE)materials via combined effect of suppression of intrinsic Ge vacancy and Sb doping. The nonequilibrium nature during melt spinning process plays very important role. For one thing, it promotes the homogeneity in Ge_(1-x)Sb_xTe samples and refines the grain size of the product. Moreover the persistent Ge precipitated as impurity phase in the traditional synthesis process is found to be dissolved back into the GeTe sublattice, accompanying with a drastic suppression of Ge vacancies concentration which in combination with Sb electron doping significantly reduced the inherent carrier concentration in *** carrier concentration, approaching the optimum carrier concentration ~3.74 × 10^(-20) cm^(-3) and a high power factor of 4.01 × 10^(-3) W m^(-1)K^(-2) at 750 K are achieved for Ge_(0.98)Sb_(0.02) Te sample. In addition,the enhanced grain boundary phonon scattering by refining the grain size through melt spinning(MS)process, coupled with the intensified alloying phonon scattering via Sb doping leads to low thermal conductivity of 1.53 W m^(-1) K^(-1) at 700 K for Ge_(0.94) Sb_(0.06) Te sample. All those contribute to a high ZT value,representing over 50% improvement in the ZT value compared to the Sb free samples, which provides an alternative way for ultrafast synthesis of high performance GeTe based thermoelectric material.
With good electrical properties and an inherently complex crystal structure, Cu2-xSe is a potential "phonon glass electron crystal" thermoelectric material that has previously not attracted much interest. In this st...
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With good electrical properties and an inherently complex crystal structure, Cu2-xSe is a potential "phonon glass electron crystal" thermoelectric material that has previously not attracted much interest. In this study, Cu2-xSe (0 ≤ x ≤0.25) compounds were synthesized by a melting-quenching method, and then sintered by spark plasma sintering to obtain bulk material. The effect of Cu content on the phase transition and thermoelectric properties of Cu2-xSe were investigated in the temperature range of 300 K-750 K. The results of X-ray diffraction at room temperature show that Cu2-xSe compounds possess a cubic structure with a space group of Fm3m (#225) when 0.15 〈 x ≤ 0.25, whereas they adopt a composite of monoclinic and cubic phases when 0 ≤x ≤ 0.15. The thermoelectric property measurements show that with increasing Cu content, the electrical conductivity decreases, the Seebeck coefficient increases and the thermal conductivity decreases. Due to the relatively good power factor and low thermal conductivity, the nearly stoichiometric Cu2Se compound achieves the highest ZT of 0.38 at 750 K. It is expected that the thermoelectric performance can be further optimized by doping appropriate elements and/or via a nanostructuring approach.
Motivated by the recent discovery of superconductivity in La3Ni2O7 under high pressure, we explore its potential charge and spin instabilities through combined model analysis and first-principles calculations. Taking ...
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Motivated by the recent discovery of superconductivity in La3Ni2O7 under high pressure, we explore its potential charge and spin instabilities through combined model analysis and first-principles calculations. Taking into account the small charge-transfer nature of high valence nickel, a fully correlated two-cluster model identifies a lattice-coupled charge instability characterized by substantial short-range fluctuations of oxygen holes. This periodicity-two instability is corroborated by density functional theory plus U calculations that also reveal a strong tendency towards concurrent antiferromagnetic ordering. The charge, spin, and associated lattice instabilities are significantly suppressed with increasing external pressure, contributing to the emergence of superconductivity in pressurized La3Ni2O7. Carrier doping and chemical substitution at the La site is found to effectively suppress these instabilities, suggesting a viable strategy to stabilize a superconducting phase under ambient pressure.
Since the concept was introduced in 2019, step-scheme (S-scheme) heterojunctions have emerged as an important subclass of heterojunction technology and attracted much attention for solar energy conversion. S-scheme he...
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Magnetism offers an additional degree of freedom to control the electron and phonon transport properties of thermoelectric materials through various thermoelectromagnetic effects. To better understand the interplay am...
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We report a top-down electrical explosion approach in a constraint tube under an argon atmosphere for high-yield production of few-to multi-layer graphene. By coupling high-voltage discharges with inert gas support, t...
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Ferromagnetic semiconductors offer an efficient way to achieve high spin polarization via spin filtering effect. Large tunneling magnetoresistance (TMR) can then be realized when multiple spin filters are put in serie...
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Ferromagnetic semiconductors offer an efficient way to achieve high spin polarization via spin filtering effect. Large tunneling magnetoresistance (TMR) can then be realized when multiple spin filters are put in series, as recently demonstrated in van der Waals 2D A-type antiferromagnets such as CrI3 and CrSBr. However, the interlayer antiferromagnetic ground state of these magnets inherently results in a high resistance state at zero field, and this volatile behavior limits potential applications. Here we fabricate hybrid spin filters using 2D ferromagnetic metal Fe3GeTe2 and semiconductor CrBr3, which are nonvolatile as two magnets are magnetically decoupled. We achieve large TMR of around 100%, with its temperature dependence well fitted by the extended Jullière model. Additionally, the devices allow spin injection tuned through bias voltage, and TMR polarity reversals are observed. Our work opens a new route to develop 2D magnetic semiconductor based spintronics.
Polycrystalline samples of Sm partially filled skutterudites SmyFexCo4-xSb12 were prepared by melting and Spark Plasma Sintering technique. The results of Rietveld refinement showed that the obtained SmyFexCo4-xSb12 s...
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Polycrystalline samples of Sm partially filled skutterudites SmyFexCo4-xSb12 were prepared by melting and Spark Plasma Sintering technique. The results of Rietveld refinement showed that the obtained SmyFexCo4-xSb12 samples possessed filled skutterudite structures. The thermal parameter (B) of Sm is larger than that of Sb, Fe, and Co, indicating that Sm "rattled" in Sb-icosahedron voids. The effects of filling atom Sm on thermoelectric properties of these compounds were investigated. With the increase of Sm filling fraction (y), electrical conductivity decreased, Seebeck coefficient increased and had a maximum value when y was 0.38; thermal conductivity reduced and had a minimum value when y was 0. 32. At 750 K, the highest figure of merit of 0.68 was obtained for Sm0.32Fe1.47Co2.53Sb12.
Rare earth metal oxides(REMO) as cathode electrocatalysts in direct borohydride fuel cell(DBFC) were *** REMO electrocatalysts tested showed favorable activity to the oxygen electro-reduction reaction and strong t...
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Rare earth metal oxides(REMO) as cathode electrocatalysts in direct borohydride fuel cell(DBFC) were *** REMO electrocatalysts tested showed favorable activity to the oxygen electro-reduction reaction and strong tolerance to the attack of BH 4-in alkaline *** simple membraneless DBFCs using REMO as cathode electrocatalyst and using hydrogen storage alloy as anodic electrocatalyst exhibited an open circuit of about 1 V and peak power of above 60 mW/cm *** DBFC using Sm 2 O 3 as cathode electrocatalyst showed a relatively better *** maximal power density of 76.2 mW/cm 2 was obtained at the cell voltage of 0.52 V.
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