Serial material model （Dilute model）and Limited Units （LU）method were employed to analyze the performance of binary piezo-composite *** reckoned electric potential deployments illustrated difference while the part...
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Serial material model （Dilute model）and Limited Units （LU）method were employed to analyze the performance of binary piezo-composite *** reckoned electric potential deployments illustrated difference while the particles were *** piezoelectricities were also calculated according to the model,and furthermore comparation suggested that small particles living in the tolerance improve the piezoelectricity of *** coinciding with analyses were processed simultaneously. Ceramics were milled for different time in order to control the concentration of particle *** results showed that the filled particles enhanced the piezoelectricity of binary piezo-composite system efficiently whereas too many chips deteriorated the performance of piezo-composites.
Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate （TEOS） in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR,TG-DSC...
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Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate （TEOS） in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR,TG-DSC and tensile strength. The results show that the silicon oxide is compatible with the Nation membrane and the thermo stability of Nation/Silicon oxide composite membrane is higher than that of Nation membrane. Furthermore, the tensile strength of Nation/Silicon oxide composite membrane is similar to that of the Nation membrane. The proton conductivity of Nation/Silicon oxide composite membrane is higher than that of Nation membrane. When the Nation/Silicon oxide composite membrane was employed as an electrolyte in H2/O2 PEMFC, a higher current density value （1 000 mA/cm^2 at 0.38 V） than that of the Nafion1135 membrane （100 mA/cm^2 at 0.04 V） was obtained at 110 ℃.
Grid computing is an active field in high-availability computing. This paper focuses on the numerical calculation of two-dimensional frequency selective surface using the finite difference time domain (FDTD) method on...
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Grid computing is an active field in high-availability computing. This paper focuses on the numerical calculation of two-dimensional frequency selective surface using the finite difference time domain (FDTD) method on grid-enabled cluster. The result of experiment shows that the evaluation via the parallel FDTD is in good agreement with the result obtained via the traditional FDTD method. The parallel FDTD algorithm is correct and reasonable, which can be extended to other periodic structure and finite exciting sources.
Using the microwave sintering technology, the effects of phosphorus （P） additions on the microstructure and properties of the ultrafine WC-10Co alloys were investigated. The experimental results show that with only ...
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Using the microwave sintering technology, the effects of phosphorus （P） additions on the microstructure and properties of the ultrafine WC-10Co alloys were investigated. The experimental results show that with only 0.3wt% P additions, full density WC-10Co cermets were obtained at temperature of 1250℃, which is 70 ℃ lower than that of the undoped counterparts. Lower sintering temperature can result in finer WC grain growth; therefore, the P-doped WC-10Co alloys exhibited higher hardness than the undoped ones. But at the same time, P doping could lead to sacrifice of fracture toughness ofWC-10Co cemented carbides.
Ti2AlC bulk material was synthesized by hot pressing of mixture powders of TiC, Ti, Al and active carbon. The phase compositions of resultant product at different temperature were detected by X-ray diffractometer. The...
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Ti2AlC bulk material was synthesized by hot pressing of mixture powders of TiC, Ti, Al and active carbon. The phase compositions of resultant product at different temperature were detected by X-ray diffractometer. The microstructures of the samples were observed by SEM. Finally, the mechanical properties and thermal properties of the sample at 1400 ℃ were measured. The results show that high purity Ti2AlC material with little Ti3AlC2 can be synthesized by hot pressing 0.5TiC/1.5Ti/1.0Al/0.5C at 1 400 ℃. Ti2AlC exhibits high mechanical properties and metallic electrical properties. Its fracture toughness is 7.0 MPa·m1/2, its flexural strength is 384 MPa at room temperature, and its electrical conductivity is 2.56×106 Ω1·m-1 at room temperature.
The effects of glass flit on the sintering and electric properties of PMN-PT textured ceramics were investigated. The glass frits, including PbO, Bi2O3 and ZnO, were selected since liquid phase sintering lowered the P...
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The effects of glass flit on the sintering and electric properties of PMN-PT textured ceramics were investigated. The glass frits, including PbO, Bi2O3 and ZnO, were selected since liquid phase sintering lowered the PMN-PT sintering temperature. The piezoelectric properties of PMN-PT ceramics with glass frit addition are strongly dependent on the densification. The addition of glass frits into PMN-PT matrix reduced the sintering temperature to 1 100℃ instead of 1 150 ℃ for samples without glass. The piezoelectric coefficients （d33） of PMN-PT textured ceramics achieved 568 pc/N with 1 wt% excess PbO.
Combustion synthesis of titanium diboride(TiB2) from titanium(Ti) and boron(B) powders was studied by theoretical calculation and experimental analysis. In high temperature range or in low temperature range, the calcu...
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Combustion synthesis of titanium diboride(TiB2) from titanium(Ti) and boron(B) powders was studied by theoretical calculation and experimental analysis. In high temperature range or in low temperature range, the calculated activation energies are 140KJ/mol or 355KJ/mol respectively, which is described by a change from dissolution-precipitation controlled process to diffusion-controlled process. With the increase of particle size of the raw materials, combustion temperature and propagating rate will both reduce. The propagating rate decreases with the addition of diluents. Further increase of diluents may result in a stop of the combustion wave halfway or even a failure of ignition.
Tungsten carbide (WC) targets with low cobalt (Co) content (0.1 - 0.2 wt.%) were prepared by hot-press sintering at 1700°C for 60 minutes in argon, from element starting powders of tungsten, cobalt and carbon. Re...
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Tungsten carbide (WC) targets with low cobalt (Co) content (0.1 - 0.2 wt.%) were prepared by hot-press sintering at 1700°C for 60 minutes in argon, from element starting powders of tungsten, cobalt and carbon. Results show that the as-fabricated targets yield relatively high relative density above 99% and high HRA above 92. WC with low Co content is formed easily than pure WC The hot-press sintering process, while element starting powders are used, is an in-situ reaction technique for accelerating the WC's diffusion rate to obtain a dense sintered body.
Hybridization is a promising method for core/shell particles by a mechanical shock process involving dry blending and dry impact blending. In this paper, hybridization was used to prepare TiB2/Ni ceramics/metal and Ti...
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Hybridization is a promising method for core/shell particles by a mechanical shock process involving dry blending and dry impact blending. In this paper, hybridization was used to prepare TiB2/Ni ceramics/metal and TiB2/Al2O3 ceramics/ceramics core/shell particles. The mechanism of the formation and the features of the core/shell particles were analyzed. The nano- Al203 particles can be coated on the surface of micron TiB2 particles directly by hybridization, The sub-micron Al2O3 particles can be coated on the surface of micron TiB2 particles, only with the introducing of PE-wax as transition layer. The mechanical properties of cermet sintered from TiB2/Ni core/shell ceramics/metal particles were compared with that from TiB2/Ni blended particles.
The valence electronic states at the model tunneling junction interface MgO∕Fe(001) system were systematically studied by comparing the spin-resolved photoemission spectroscopy of clean Fe(001) and MgO covered MgO∕F...
The valence electronic states at the model tunneling junction interface MgO∕Fe(001) system were systematically studied by comparing the spin-resolved photoemission spectroscopy of clean Fe(001) and MgO covered MgO∕Fe(001) surfaces using linearly p-polarized light. For the clean Fe(001) film on GaAs(001), five distinct features including bulk and surface-related transitions are found. The bulk and surface-state transitions are well-accounted for by the direct transition model based on the calculated energy band structure of bcc bulk Fe(001). The previously observed minority feature at a binding energy EB=−1.3eV is reinterpreted as a surface roughness associated transition. Upon the MgO adsorption on Fe(001), the surface-state transitions at EB=−0.3eV below Fermi energy EF appearing in both the majority and minority spin spectra at low photon energy (18eV to 35eV) were quenched. This is also the first direct experimental evidence of a minority spin surface state located just below the Fermi energy as predicted previously. The bulk states at the MgO∕Fe(001) interface exhibit a layer-dependent modification, i.e., the bulk states in the deeper Fe layer(s) remain unaffected, while the states of Δ5↓ band symmetry in the Fe layer(s) closest to the MgO∕Fe(001) interface are strongly modified, in contrast to the states of Δ1↑ symmetry. As a consequence of this interface effect, the “partial spin polarization” at the Fermi level changes sign from negative to positive values as seen in the spin asymmetry spectra at photon energies of 40eV and 60eV. The origin of this spin- and symmetry-dependent modification observed at MgO∕Fe(001) interfaces is discussed.
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