Using the microwave sintering technology, the effects of VC/Cr3C2 additions on the microstructure and properties of the ultrafine WC-10Co alloys were investigated. Experimental results showed that ultrafine WC-10Co al...
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Using the microwave sintering technology, the effects of VC/Cr3C2 additions on the microstructure and properties of the ultrafine WC-10Co alloys were investigated. Experimental results showed that ultrafine WC-10Co alloys with 0.6% additions had the best properties while the excessive grain growth inhibitors would decrease the properties of alloys. Moreover, with or without additions, WC-10Co alloys with finely uniform grained WC by microwave sintering could be obtained.
AlN ceramics doped with yttrium o5xide (Y2O3) as the sintering additive were prepared via the spark plasma sintering (SPS) technique. The sintering behaviors and densification mechanism were mainly investigated. The r...
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AlN ceramics doped with yttrium o5xide (Y2O3) as the sintering additive were prepared via the spark plasma sintering (SPS) technique. The sintering behaviors and densification mechanism were mainly investigated. The results showed that Y2O3 addition could promote the AlN densification. Y2O3-doped AlN samples could be densified at low temperatures of 1600-1700°C in 20-25 minutes. The AlN samples were characterized with homogeneous microstructure. The Y-Al-O compounds were created on the grain boundaries due to the reactions between Y 2O3 and Al2O3 on AlN particle surface. With increasing the sintering temperature, AlN grains grew up, and the location of grain boundaries as well as the phase compositions changed. The Y/Al ratio in the aluminates increased, from Y3Al5O 12 to Y4lO3 and to Y4Al 2O9. High-density, the growth of AlN grains and the homogenous dispersion of boundary phase were helpful to improve the thermal conductivity of AlN ceramics. The thermal conductivity of 122Wm -1K-1 for the 4.0 mass%Y203-doped AlN sample was reached.
In the study Li4/3Ti5/3O4 thin films were deposited on Pt substrates by sol-gel method using a spin coator. The coated films are dried at 310-360 °C, and then annealed at 500-800 °C for 30min. The prepared f...
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In the study Li4/3Ti5/3O4 thin films were deposited on Pt substrates by sol-gel method using a spin coator. The coated films are dried at 310-360 °C, and then annealed at 500-800 °C for 30min. The prepared films were characterized by X-ray diffraction, atomic force microscope and scanning electron microscope. The results indicated that the prepared film belonged to a spinel structure and had a uniform morphology. Electrochemical properties of the prepared electrode films were evaluated by using a discharge and charge test. From these results, it can be showed that the thin film electrode annealed at 700 °C exhibited good crystallinity, smooth surface morphology, high capacity, and good rechargeability. Therefore, This film was therefore suitable for use as an anode for thin-film microbatteries.
Al2(1-x)MgxTi1+xO5(x=0.05-0.3) composite powder was prepared by the method of chemical coprecipitation and subsequent sintering using TiCl5, MgCl2 and AlCl 3 solution as the raw materials, and ammonia and ammonium car...
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Al2(1-x)MgxTi1+xO5(x=0.05-0.3) composite powder was prepared by the method of chemical coprecipitation and subsequent sintering using TiCl5, MgCl2 and AlCl 3 solution as the raw materials, and ammonia and ammonium carbonate as the solvent. Thermal dynamics and kinetic dynamics analysis of the precursor during the heat treatment were explored in detail, and the reaction process of Al2(1-x)MgxTi1+xO5(x=0.3) composite powder was confirmed. Results show that, as the temperature increases MgO reacts with TiO2 of anatase phase to form MgTi2O5. At about 650°C, anatase transfers into rutile. Then MgTi2Os reacts with Al2O3 to produce MgAl2O4 at 900°C. When the temperature is above 1100°C, the desired Al 2(1-x)MgxTi1+xO5(x=0.3) composite powder is synthesized by the reaction of MgAl2O24, Al 2O3 and TiO2 of rutile phase.
Si-clathrate compounds, n-type Ba8 Ga16 Znx Si30-x (x = 0, 1, 2, 3, 4), are synthesized by using the solid-state reaction method and the melting method. The effects of the replacement of Si with Zn on the structure an...
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Si-clathrate compounds, n-type Ba8 Ga16 Znx Si30-x (x = 0, 1, 2, 3, 4), are synthesized by using the solid-state reaction method and the melting method. The effects of the replacement of Si with Zn on the structure and the electrical transmission characteristics are investigated for n-type Ba8Ga16Znx Si30-x. The results indicate that the sample with the value of x = 1 has the maximal bond angle distortion Δθ, Δθ = 4.4°. The electrical conductivity of samples with x = 0, 2, 4 is higher than that of samples with x = 1, 3. Among the samples, the electrical conductivity of Ba8 Ga16 Zn1 Si29 is the lowest. The samples with x = 0, 2, 4 exhibit a higher Seebeck coefficient than that of samples with x = 1, 3, and the value of the Seebeck coefficient decreases with the increase of the Zn composition. The power factor of Ba8Ga16Zn2Si28 compound is as large as 1.03 × 10-3 W/(m· K2) at 1000K.
High-energy ball mill method was used to fabricate the stainless steel nanocomposite powder from stainless steel powder, carbon powder and titanium powder as raw materials. The X-ray diffraction, SEM and the BET metho...
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High-energy ball mill method was used to fabricate the stainless steel nanocomposite powder from stainless steel powder, carbon powder and titanium powder as raw materials. The X-ray diffraction, SEM and the BET method were used to evaluate the microstructure of treated samples. The results showed that in vacuum condition, with ball mill time increase, stainless steel powder become more and finer, the grain size can reach nanometer level. At the same time, the nano TiC can be formed during ball milling, the stainless steel-TiC nano composite powder can be obtained.
Using the microwave sintering technology, the samples of WC-10Co cemented carbide were put separately at the pure electric field, the pure magnetic field and the mixture E field and H field in a single-mode TE103 cavi...
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Using the microwave sintering technology, the samples of WC-10Co cemented carbide were put separately at the pure electric field, the pure magnetic field and the mixture E field and H field in a single-mode TE103 cavity. The sintering behaviors of WC-10Co cemented carbide were researched and the effects of these positions on their properties also were analyzed.
Extensive dislocation structure was observed by transmission electron microscopy (TEM) in polycrystalline alumina ceramic sintered under a short-time high temperature 1800°C and pressure 100 MPa. There existed lo...
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Extensive dislocation structure was observed by transmission electron microscopy (TEM) in polycrystalline alumina ceramic sintered under a short-time high temperature 1800°C and pressure 100 MPa. There existed lots of dislocation structures: dislocation coalescence, dislocation arrays and dislocation network. The burgers vector of the dislocation array was determined by diffraction contrast as 1/3 less than or equal 11 over-bar 00>. The dislocation network formation was discussed, and it belonged to basal slip system l/3 less than or equal 112 over-bar 0>. Plastic deformation occured mainly by basal plane slip and prime plane slip.
In the present study, Si2N4 whisker was prepared by thermal decomposition of Si(NH)2, the experimental principles and process were described in detail. Influence factors such as temperature, residual carbon(C), a smal...
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In the present study, Si2N4 whisker was prepared by thermal decomposition of Si(NH)2, the experimental principles and process were described in detail. Influence factors such as temperature, residual carbon(C), a small quantity of oxygen and crucible material that could influence the growth of whisker was analyzed and discussed. The influence degree of each factor and mechanism were explained as well. High quality and modified Si3N4 whisker could be prepared by controlling the influence factors during the experimental process. As a result, it was significant to fabricate batch production of high performance Si3N4 whisker by utilizing this method.
Sr-filled skutterudite compounds SryCo4Sb 12 (y=0-0.20) were synthesized by melting method. XRD and EPMA results revealed that the obtained samples are single skutterudite phase with homogeneous chemical composition. ...
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Sr-filled skutterudite compounds SryCo4Sb 12 (y=0-0.20) were synthesized by melting method. XRD and EPMA results revealed that the obtained samples are single skutterudite phase with homogeneous chemical composition. The lattice parameters increase linearly with increasing Sr content in the range of y=0-0.20. The thermal conductivity, electrical conductivity and Seebeck coefficient were measured in the temperature range of 300-850K. The measurement of Hall effect was performed by Van de Pauw method at room temperature. The obtained Sr-filled skutterudite exhibits n-type conduction. The absolute value of the Seebeck coefficient of Sr yCo4Sb12 decreases with the increase of Sr content. The electrical conductivity increases with the increase of Sr content. The lattice thermal conductivity of SryCo4Sb12 is significantly depressed as compared with unfilled CoSb3. The maximum dimensionless thermoelectric figure of merit is 0.7 for Sr 0.20Co4Sb12 at 850K. Further optimization of chemical composition would improve the thermoelectric performance.
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