Using the microwave sintering technology, the effects of phosphorus （P） additions on the microstructure and properties of the ultrafine WC-10Co alloys were investigated. The experimental results show that with only ...
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Using the microwave sintering technology, the effects of phosphorus （P） additions on the microstructure and properties of the ultrafine WC-10Co alloys were investigated. The experimental results show that with only 0.3wt% P additions, full density WC-10Co cermets were obtained at temperature of 1250℃, which is 70 ℃ lower than that of the undoped counterparts. Lower sintering temperature can result in finer WC grain growth; therefore, the P-doped WC-10Co alloys exhibited higher hardness than the undoped ones. But at the same time, P doping could lead to sacrifice of fracture toughness ofWC-10Co cemented carbides.
Ti2AlC bulk material was synthesized by hot pressing of mixture powders of TiC, Ti, Al and active carbon. The phase compositions of resultant product at different temperature were detected by X-ray diffractometer. The...
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Ti2AlC bulk material was synthesized by hot pressing of mixture powders of TiC, Ti, Al and active carbon. The phase compositions of resultant product at different temperature were detected by X-ray diffractometer. The microstructures of the samples were observed by SEM. Finally, the mechanical properties and thermal properties of the sample at 1400 ℃ were measured. The results show that high purity Ti2AlC material with little Ti3AlC2 can be synthesized by hot pressing 0.5TiC/1.5Ti/1.0Al/0.5C at 1 400 ℃. Ti2AlC exhibits high mechanical properties and metallic electrical properties. Its fracture toughness is 7.0 MPa·m1/2, its flexural strength is 384 MPa at room temperature, and its electrical conductivity is 2.56×106 Ω1·m-1 at room temperature.
The effects of glass flit on the sintering and electric properties of PMN-PT textured ceramics were investigated. The glass frits, including PbO, Bi2O3 and ZnO, were selected since liquid phase sintering lowered the P...
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The effects of glass flit on the sintering and electric properties of PMN-PT textured ceramics were investigated. The glass frits, including PbO, Bi2O3 and ZnO, were selected since liquid phase sintering lowered the PMN-PT sintering temperature. The piezoelectric properties of PMN-PT ceramics with glass frit addition are strongly dependent on the densification. The addition of glass frits into PMN-PT matrix reduced the sintering temperature to 1 100℃ instead of 1 150 ℃ for samples without glass. The piezoelectric coefficients （d33） of PMN-PT textured ceramics achieved 568 pc/N with 1 wt% excess PbO.
Combustion synthesis of titanium diboride(TiB2) from titanium(Ti) and boron(B) powders was studied by theoretical calculation and experimental analysis. In high temperature range or in low temperature range, the calcu...
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Combustion synthesis of titanium diboride(TiB2) from titanium(Ti) and boron(B) powders was studied by theoretical calculation and experimental analysis. In high temperature range or in low temperature range, the calculated activation energies are 140KJ/mol or 355KJ/mol respectively, which is described by a change from dissolution-precipitation controlled process to diffusion-controlled process. With the increase of particle size of the raw materials, combustion temperature and propagating rate will both reduce. The propagating rate decreases with the addition of diluents. Further increase of diluents may result in a stop of the combustion wave halfway or even a failure of ignition.
Tungsten carbide (WC) targets with low cobalt (Co) content (0.1 - 0.2 wt.%) were prepared by hot-press sintering at 1700°C for 60 minutes in argon, from element starting powders of tungsten, cobalt and carbon. Re...
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Tungsten carbide (WC) targets with low cobalt (Co) content (0.1 - 0.2 wt.%) were prepared by hot-press sintering at 1700°C for 60 minutes in argon, from element starting powders of tungsten, cobalt and carbon. Results show that the as-fabricated targets yield relatively high relative density above 99% and high HRA above 92. WC with low Co content is formed easily than pure WC The hot-press sintering process, while element starting powders are used, is an in-situ reaction technique for accelerating the WC's diffusion rate to obtain a dense sintered body.
Hybridization is a promising method for core/shell particles by a mechanical shock process involving dry blending and dry impact blending. In this paper, hybridization was used to prepare TiB2/Ni ceramics/metal and Ti...
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Hybridization is a promising method for core/shell particles by a mechanical shock process involving dry blending and dry impact blending. In this paper, hybridization was used to prepare TiB2/Ni ceramics/metal and TiB2/Al2O3 ceramics/ceramics core/shell particles. The mechanism of the formation and the features of the core/shell particles were analyzed. The nano- Al203 particles can be coated on the surface of micron TiB2 particles directly by hybridization, The sub-micron Al2O3 particles can be coated on the surface of micron TiB2 particles, only with the introducing of PE-wax as transition layer. The mechanical properties of cermet sintered from TiB2/Ni core/shell ceramics/metal particles were compared with that from TiB2/Ni blended particles.
The valence electronic states at the model tunneling junction interface MgO∕Fe(001) system were systematically studied by comparing the spin-resolved photoemission spectroscopy of clean Fe(001) and MgO covered MgO∕F...
The valence electronic states at the model tunneling junction interface MgO∕Fe(001) system were systematically studied by comparing the spin-resolved photoemission spectroscopy of clean Fe(001) and MgO covered MgO∕Fe(001) surfaces using linearly p-polarized light. For the clean Fe(001) film on GaAs(001), five distinct features including bulk and surface-related transitions are found. The bulk and surface-state transitions are well-accounted for by the direct transition model based on the calculated energy band structure of bcc bulk Fe(001). The previously observed minority feature at a binding energy EB=−1.3eV is reinterpreted as a surface roughness associated transition. Upon the MgO adsorption on Fe(001), the surface-state transitions at EB=−0.3eV below Fermi energy EF appearing in both the majority and minority spin spectra at low photon energy (18eV to 35eV) were quenched. This is also the first direct experimental evidence of a minority spin surface state located just below the Fermi energy as predicted previously. The bulk states at the MgO∕Fe(001) interface exhibit a layer-dependent modification, i.e., the bulk states in the deeper Fe layer(s) remain unaffected, while the states of Δ5↓ band symmetry in the Fe layer(s) closest to the MgO∕Fe(001) interface are strongly modified, in contrast to the states of Δ1↑ symmetry. As a consequence of this interface effect, the “partial spin polarization” at the Fermi level changes sign from negative to positive values as seen in the spin asymmetry spectra at photon energies of 40eV and 60eV. The origin of this spin- and symmetry-dependent modification observed at MgO∕Fe(001) interfaces is discussed.
Nano-scale 8mol% titania doped yttria stabilized zirconia (8TiYSZ) powders were prepared by coprecipitation combined with azeotropic distillation process. Powder X-ray diffraction, BET method and TEM were performed to...
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Nano-scale 8mol% titania doped yttria stabilized zirconia (8TiYSZ) powders were prepared by coprecipitation combined with azeotropic distillation process. Powder X-ray diffraction, BET method and TEM were performed to characterize the powder properties. The relative density of 8TiYSZ sample sintered by spark plasma sintering technique at 1150°C for 3min reached 99%. The electrical conductivity of sintered pellet was much higher than the reported one.
The relation among electronic structure, chemical bond and property of Ti2AlC, Ti3AlC2 and doping Si into Ti2AlC was studied by density function and the discrete variation （DFT-DVM） method. After adding Si into Ti2A...
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The relation among electronic structure, chemical bond and property of Ti2AlC, Ti3AlC2 and doping Si into Ti2AlC was studied by density function and the discrete variation （DFT-DVM） method. After adding Si into Ti2AlC, the interaction between Si and Ti is weaker than that between Al and Ti, and the strengths of ionic and covalent bonds decrease both. The ionic and covalent bonds in Ti3AlC2, especially in Ti-Al, are stronger than those in Ti2AlC. Therefore, in synthesis of Ti2AlC, the addition of Si enhances the Ti3AlC2 content instead of Ti2AlC. The density of state （DOS） shows that there is mixed conductor characteristic in Ti2AlC and Ti3AlC2. The DOS of Ti3AlC2 is much like that of Ti2AlC. Ti2SiAl1-xC has more obvious tendency to form a semiconductor than Ti2AlC, which is seen from the obvious difference of partial DOS between Si and Al 3/7.
Dense SnO2 based ceramics are widely used. In this paper, 95SnO2-5MnO2 ceramics were prepared by pressureless sintering in air at different temperatures. Phase compositions and microstructures are examined by XRD, SEM...
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Dense SnO2 based ceramics are widely used. In this paper, 95SnO2-5MnO2 ceramics were prepared by pressureless sintering in air at different temperatures. Phase compositions and microstructures are examined by XRD, SEM and EDX, respectively. The SEM results show that different morphologies exist at the SnO2 grain boundary of ceramic, which compose of manganese oxidation, testified by EDX. The different manganese oxides phases, found by XRD, are the source of oxygen concentration at the grain boundary during heating and oxygen dissipation when cooling. However, solid solutions of Mn, Sn and O are not observed. The density of 95SnO2-5MnO2 ceramics decreases with increasing the sintering temperature, due to the evaporation of SnO and decreasing concentration of oxygen at grain boundary in the cooling process. Densification of the ceramic is promoted with inhibiting the decomposition of SnO2 by increasing oxygen concentration in the heating process, but it is limited by the dissipation of oxygen at the grain boundary in the cooling process.
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