检索结果-内蒙古大学图书馆

0.75 Gbit/s high-speed classical key distribution with mode-shift keying chaos synchronization of Fabry-Perot lasers

学校读者我要写书评

暂无评论

arXiv

arXiv 2020年

作者： Gao, Hua Wang, Anbang Wang, Longsheng Jia, Zhiwei Guo, Yuanyuan Gao, Zhensen Yan, Lianshan Qin, Yuwen Wang, Yuncai Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education and Shanxi Province Taiyuan China College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan China School of Information Engineering Guangdong University of Technology Guangzhou China Guangdong Provincial Key Laboratory of Photonics Information Technology Guangzhou China Center for Information Photonics and Communications School of Information Science and Technology Southwest Jiaotong University Chengdu China

High-speed physical key distribution is diligently pursued for secure communication. In this paper, we propose and experimentally demonstrate a scheme of high-speed key distribution using mode-shift keying chaos synchronization between two multi-longitudinal-mode Fabry–Perot lasers commonly driven by a super-luminescent diode. Legitimate users dynamically select one of the longitudinal modes according to private control codes to achieve mode-shift keying chaos synchronization. The two remote chaotic light waveforms are quantized to generate two raw random bit streams, and then those bits corresponding to chaos synchronization are sifted as shared keys by comparing the control codes. In this method, the transition time, i.e., the chaos synchronization recovery time is determined by the rising time of the control codes rather than the laser transition response time, so the key distribution rate is improved greatly. Our experiment achieved a 0.75-Gbit/s key distribution rate with a bit error rate of 3.8 × 10-3 over 160-km fiber transmission with dispersion compensation. The entropy rate of the laser chaos is evaluated as 16 Gbit/s, which determines the ultimate final key rate together with the key generation ratio. It is therefore believed that the method pays a way for Gbit/s physical key distribution. © 2020, CC0.

关键词： Synchronization

A Practical and High-Performance Nitrogen Dioxide Gas Sensor that Can Be Rapidly Mass-Produced Based on Gallium Nitride Quantum Dots Film

学校读者我要写书评

暂无评论

SSRN 2022年

作者： Han, Dan Chen, Yi Li, Donghui Dong, Hailiang Xu, Bingshe Sang, Shengbo He, Xiuli Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Information and Computer Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan030024 China Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Ministry of Education Taiyuan030024 China State Key Laboratory of Transducer Technology Aerospace Information Research Institute Chinese Academy of Sciences Beijing100190 China Shanxi Research Institute of 6D Artificiat Intelligence Biomedical Science Taiyuan030024 China

Gallium nitride (GaN) has some challenges for gas sensing, such as high detection lower limit (LOD) or controlling the epitaxy of nanostructures. To address these issues, we exclusively designed a device to enhance the gas interaction capabilities of GaN quantum dots (QDs) film fabricated by metal-organic chemical vapor deposition (MOCVD). The GaN QDs film gas sensor exhibited a low LOD (5 ppb) to NO2 at room temperature (RT), which has much superior gas performance than other GaN-based sensors. The results manifest that many ultra-small QDs around 2 nm in diameter are stacked to form QDs of larger size, and confirm the existence of vacancies. The sensor displays a ultra-high electron mobility of 1237.37 cm2 V−1s−1, demonstrate that great shallow donor impurities in GaN QDs film that ionize easily at RT, which is greatly beneficial for gas sensing. The sensing mechanisms were analyzed based on its abundant active sites, ultrahigh carrier mobility, high surface energy and chemical activity, grain boundary barrier and good electrical conductivity. Moreover, the sensor processes high selectivity, repeatability, stability and reusability based on MOCVD technology which can realize precise control of structure, morphology and surface energy level, which is expected to achieve rapid industrialization. © 2022, The Authors. All rights reserved.

关键词： Gallium nitride

Determination of weak squeezed vacuum state through photon statistics measurement

学校读者我要写书评

暂无评论

arXiv

arXiv 2021年

作者： Zuo, Guanhua Zhang, Yuchi Li, Jing Zhu, Shiyao Guo, Yanqiang Zhang, Tiancai State Key Laboratory of Quantum Qptics and Quantum Optics Devices Collaborative Innovation Center of Extreme Optics Institute of Opto-Electronics Shanxi University Taiyuan030006 China College of Physics and Electronic Engineering Shanxi University Taiyuan030006 China Department of Physics Zhejiang University Hangzhou310027 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education and Shanxi Province College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan030600 China

Weak squeezed vacuum light, especially resonant to the atomic transition, plays an important role in quantum storage and generation of various quantum sources. However, the general homodyne detection (HD) cannot determine weak squeezing due to the low signal to noise ratio and the limited resolution of the HD system. Here we provide an alternative method based on photon statistics measurement to determine the weak squeezing of the squeezed vacuum light generated from an optical parametric oscillator working far below the threshold. The approach is established the relationship between the squeezing parameter and the second-order degree of coherence. The theoretical analysis agrees well with the experiment results. The advantage of this method is that it provides a feasible and reliable experimental measure to determine the weak squeezing with high precision and the measurement is independent on the detection efficiency. This method can be used to measure other quantum features for various quantum states with extremely weak non-classicality. Copyright © 2021, The Authors. All rights reserved.

关键词： Optical parametric oscillators

10-Hertz quantum light source generation on the cesium D2 line using single photon modulation

学校读者我要写书评

暂无评论

arXiv

arXiv 2022年

作者： Zuo, Guan-Hua Zhang, Yu-Chi Li, Gang Zhang, Peng-Fei Yang, Peng-Fei Guo, Yan-Qiang Zhu, Shi-Yao Zhang, Tian-Cai State Key Laboratory of Quantum Optics and Quantum Optics Devices Collaborative Innovation Center of Extreme Optics Institute of Opto-Electronics Shanxi University Taiyuan030006 China College of Physics and Electronic Engineering Shanxi University Taiyuan030006 China Department of Physics Zhejiang University Hangzhou310027 China Key Laboratory of Advanced Transducers and Intelligent Control System Ministry of Education and Shanxi Province College of Physics and Optoelectronics Taiyuan University of Technology Taiyuan030024 China

Generation of quantum light source is a promising technique to overcome the standard quantum limit in precision measurement. Here, we demonstrate an experimental generation of quadrature squeezing resonating on the cesium D2 line down to 10 Hz for the first time. The maximum squeezing in audio frequency band is 5.57 dB. Moreover, we have presented a single-photon modulation locking to control the squeezing angle, while effectively suppressing the influence of laser noise on low-frequency squeezing. The whole system operates steadily for hours. The generated low-frequency quantum light source can be applied in quantum metrology, light-matter interaction investigation and quantum memory in the audio frequency band and even below. Copyright © 2022, The Authors. All rights reserved.

关键词： Photons

Highly Sensitive and Rapidly Responding Room-Temperature NH3 Gas Sensor that is Based on Exfoliated Black Phosphorus

学校读者我要写书评

暂无评论

SSRN 2022年

作者： Han, Dan Han, Xiaomei Zhang, Xiaqin Wang, Weili Li, Donghui Li, Hongwei Sang, Shengbo Shanxi Province Cancer Hospital Chinese Academy of Medical Sciences Cancer Hospital Shanxi Medical University Taiyuan030000 China Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Information and Computer Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System The Ministry of Education Taiyuan University of Technology Taiyuan030024 China

Black phosphorus (BP) has recently attracted significant interest in gas sensing because of its outstanding electronic and optical properties. In this paper, we demonstrated a series of gas sensors for detecting NH3 at room temperature that were based on BP nanosheets that were exfoliated for various durations. The BP nanosheet gas sensors showed excellent sensitivity for the detection of NH3 down to 100 ppb (~32%) under ambient conditions compared to previous reports. The BP nanosheets that were exfoliated for 60 min showed the highest response to 100 ppm NH3, namely, 121%, which was 2.5 times greater than the response of ground BP. The corresponding sensor also exhibited a stable response in the humidity range of 22% RH to 35% RH, which is the typical humidity range for non-rainy days. Moreover, the prepared NH3 gas sensor showed high selectivity, fast response and recovery, and excellent repeatability. According to various experimental and theoretical studies, the response and binding energy of BP towards NOx were higher than those towards NH3. However, very interestingly, the response of the exfoliated BP nanosheets to NH3 was higher than that to NOx in our work. The selectivity transformation from NOx to NH3 was mainly caused by the different layer spacing of the ground BP and the change in spacing between the BP nanosheet layers with different exfoliation times, increased oxygen incorporation, phosphate ions and defects that is induced by the liquid-phase exfoliation process, which led to the variations in its band gap and surface states. © 2022, The Authors. All rights reserved.

关键词： Nanosheets

A Novel Magnetoelastic Biosensor Based on Pdms/Fesib/Qds Composite Film for African Swine Fever Virus Detections

学校读者我要写书评

暂无评论

SSRN 2024年

作者： Liu, Yuanhang Sang, Shengbo Zhao, Dong Ge, Yang Xue, Juanjuan Duan, Qianqian Guo, Xing Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System of The Ministry of Education Taiyuan University of Technology Taiyuan030024 China Shanxi Research Institute of 6D Artificial Intelligence Biomedical Science Taiyuan030024 China

African swine fever (ASF) is a highly contagious and severe hemorrhagic disease caused by the African swine fever virus (ASFV). The continuous spread of ASFV affects the safety of global meat supply, so the establishment of sensitive and specific detection methods for ASFV has become an important hot spot in food safety. Herein, we developed a flexible magnetoelastic (ME) biosensor based on PDMS/FeSiB/QDs composite films for the detection of ASFV. Based on the high luminescence performance of CsPbBr3 quantum dots and the excellent magnetoelastic effect of FeSiB, flexible ME biosensors convert stress signals generated by antibody-antigen-specific binding into optical and electromagnetic signals. The nanostructures covalently linked by quantum dots and PDMS provide biomodification sites for ASFV antibodies, simplifying the functionalization modification process compared to conventional biosensors. The deformation of the PDMS film is amplified and conversion of surface stress signal to electrical signal is enhanced by exposing the biosensor to a uniform magnetic field. The experimental results proved that the flexible ME biosensor has wide linear range of 10 ng/mL - 100 μg/mL, and the detection limit is as low as 0.7933 ng/mL. Moreover, the flexible ME biosensor have also shown to good stability, sensitivity and specificity. © 2024, The Authors. All rights reserved.

关键词： Biosensors

DC Overvoltage Analysis of GFM-controlled Wind Farm Connected via MMC-HVDC system Caused by Receiving-end AC Faults

学校读者我要写书评

暂无评论

DC Overvoltage Analysis of GFM-controlled Wind Farm Connecte...

International Conference on Power Electronics and Motion control (IPEMC)

作者： Siying Chen Min Cheng Yingbiao Li Jiawei Yu Yihua Zhu Mingkang Wu Jiabing Hu Jianan Yan State Key Laboratory of Advanced Electromagnetic Technology and School of Electrical and Electronic Engineering Huazhong University of Science and Technology China Yunnan Power Grid China CSG Key Laboratory for Power System Simulation (Electric Power Research Institute China Southern Power Grid) State Key Laboratory of HVDC (Electric Power Research Institute China Southern Power Grid) National Energy Power Grid Technology R&D Centre Guangdong Provincial Key Laboratory of Intelligent Operation and Control for New Energy Power System China

ISBN: (数字)9798350351330

ISBN: (纸本)9798350351347

DC overvoltage occurs when short circuit fault exists at the receiving-end and is harmful to the safety of the system where wind farms are connected to the grid through high-voltage direct current (HVDC) transmission based on the modular multilevel converter (MMC). To address this issue, this paper first analyzed the mechanism of the DC overvoltage and innovatively proposed a strategy in which grid-forming-controlled wind farms are integrated into the AC grid through MMC-HVDC, whose sending-end applies grid-following control and constant DC voltage control. However, secondary DC overvoltage appears during the fault recovery stage and is mainly caused by the saturation of the PI controller of constant active power control. Simulations are carried out on a test with MATLAB/Simulink, and results verify the efficacy of the proposed methods in suppressing DC overvoltage that appeared during receiving-end faults and their recovery stage.

关键词： PI control Simulation Power control Wind farms Robustness Wind turbines Safety

controllable Electrical Characteristic of Ti3c2t2/Mos2 (T=Oh, F, O) Interfaces for High Performance Electronics: Insights from First-Principles

学校读者我要写书评

暂无评论

SSRN 2023年

作者： Zhang, Qiang Liu, Yan Zhang, Riguang Lv, Bohan Hao, Runfang Sang, Shengbo Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Electronic Information and Optical Engineering Taiyuan University of Technology Shanxi Taiyuan030024 China Key Lab of Advanced Transducers and Intelligent Control System of The Ministry of Education Taiyuan University of Technology Shanxi Taiyuan030024 China School of Software Taiyuan University of Technology Shanxi Taiyuan030024 China State Key Laboratory of Clean and Efficient Coal Utilization China Laboratory of Aerospace Servo Actuation and Transmission Beijing Institute of Precision Mechatronics and Controls Beijing100000 China

Two-dimensional (2D) semiconductors have shown competitive potential for applications into beyond-silicon electronics. However, the controllable electrical characteristic of metal-semiconductor interfaces is still a challenge for high performance electronics due to Fermi level pinning. To explore Ti3C2T2/MoS2 (T= OH, F, O) for high performance electronics, the vertical electric field and interlayer distance are adopted here to regulate the electrical characteristic of interfaces based on the first-principles calculations. Though this, the electrical characteristic of Ti3C2O2/MoS2 and Ti3C2F2/MoS2 are more sensitive to electric field or interlayer distance than that of Ti3C2(OH)2/MoS2. Especially, the negative electric field with larger than -0.2 V/Å makes Ti3C2O2/MoS2 interface change from p-type Schottky to n-type Schottky contact. Furthermore, the Ti3C2O2/MoS2 interface can not only switch from p-type Schottky to n-type Schottky contact, but also from p-type Schottky to n-type Ohmic contact by varying interlayer distance. Moreover, the tunneling barriers of all interfaces are more sensitive to interlayer distance than to electric field. This work provides vital insights for high-performance electronics of Ti3C2T2/MoS2 (T=OH, F, O) in experiments. © 2023, The Authors. All rights reserved.

关键词： Electric fields

Pressure-assisted Silver Sintering Structure Optimization for Power Modules 5

学校读者我要写书评

暂无评论

Pressure-assisted Silver Sintering Structure Optimization fo...

5th International Conference on Optoelectronic Science and Materials, ICOSM 2023

作者： Zhang, Hao Xing, Yulong Gao, Lilan Liu, Zheng Tan, Yansong Lu, Guoquan Tianjin Key Laboratory for Advanced Mechatronic System Design and Intelligent Control Tianjin University of Technology Tianjin300384 China National Demonstration Center or Experimental Mechanical and Electrical Engineering Education Tianjin University of Technology Tianjin300384 China Tianjin Yixunyuan New Material Technology Co. Ltd. Tianjin300380 China School of Chemical Engineering Tianjin University Tianjin300350 China School of Materials Science and Engineering Virginia Polytechnic Institute and State University BlacksburgVA24061 United States

ISBN: (纸本)9781510674547

As mobile technology evolves from 5G to 6G, the demand for third-generation semiconductors such as SiC with higher power and frequency capabilities is increasing. Silicon Carbide power modules generate significant heat during operation, requiring large-area nano-silver sintering technology to improve module performance and reliability. However, in large-area sintering processes, low exhaust efficiency of solder paste by-products and uneven sintering pressure of the nano-silver paste result in poor sintering quality of the silver layer. This study aims to improve the sintering quality of interconnected silver layers by optimizing the sintering pressure distribution and adding rubber spacers to the sintering structure. ABAQUS was used to quantitatively analyze the effects of pressure methods and gasket material, diameter, and thickness on the stress distribution in the silver layer. Finally, based on the simulation results, an optimized sintering structure was proposed to unify the pressure and reduce the stress concentration in the silver layer, and verified experimentally by sintering tests. Compared with the traditional sintering structure, the application of a 2 mm thick fluoro rubber gasket with the same surface area as the silver layer in the optimized structure reduced the porosity to 2.15% and achieved a more dense sintered silver layer. © 2024 SPIE.

关键词： Finite element method