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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films

Science China(Information Sciences) 2025年第06期 204-212页

作者： Yu-Chun LI Xiao-Xi LI Zhongshan XU Zi-Ying HUANG Yingguo YANG Xiao-Na ZHU Ming LI David Wei ZHANG Hong-Liang LU State Key Laboratory of Application-Specific Integrated Circuit and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Zhangjiang Fudan International Innovation Center National Integrated Circuit Innovation Center Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Jiashan Fudan Institute School of Integrated Circuits Peking University

Hafnium oxide（HfO2） is a promising ferroelectric material because of its robust electric dipoles at the *** HfO2is an oxygen-displacement-induced ferroelectric material, a comprehensive understanding of the intricate relationship between its electrical performance and oxygen-related processes is still limited. This study delves into the ferroelectric and dielectric properties of Zr-doped HfO2(Hf0.5Zr0.5O2, HZO) thin films, unveiling a reliance on the oxygen dose during the atomic layer deposition process. A superior remanent polarization（2Pr） of 58 μC/cm2and a high dielectric constant of 52.7 are obtained in the HZO capacitors with 10 and 1 s oxygen plasma durations, respectively. Our work establishes that the enhanced ferroelectricity observed in samples with longer oxygen dose time is attributed to the gradual out-of-plane orientation of the polar c-axis, as indicated by grazing incidence wide-angle X-ray scattering analysis. Meanwhile,the larger dielectric constant observed in samples with the shortest oxygen dose time（1 s） originates from the out-of-plane tilt of the b-axis in an orthorhombic-phase cell. These new insights into the controlled crystal orientation through oxygen dose modulation open avenues for optimizing the performance of the HfO2-based devices.

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A high-performance enhancement-mode AlGaN/GaN HEMT

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半导体学报 2010年第8期31卷 45-47页

作者： Feng Zhihong Xie Shengyin Zhou Rui Yin Jiayun Zhou Wei Cai Shujun National Key Laboratory of Application Specific Integrated Circuit Shijiazhuang 050051China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma *** enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 *** current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of μm are 10.3 GHz and 12.5 GHz,respectively,which is comparable with the depletion-mode device.A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.

关键词： enhancement-mode AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation

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Compensation of quadrature imbalance in an optical coherent OQPSK receiver in presence of frequency offset

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Frontiers of Optoelectronics 2011年第3期4卷 288-291页

作者： Xinying LI Bo HUANG Yufeng SHAO Junwen ZHANG Shumin ZOU Wuliang FANG Li TAO Jiangbo ZHU Chi NAN Department of Communication Science and Engineering State Key Laboratory of Application Specific Integrated Circuit (ASIC) and SystemFudan University

In this paper, we describe the impact of quadrature imbalance(QI) in the presence of frequency offset in an optical coherent offset quadrature phase shift keying(OQPSK) receiver. Arbitrary conjugate misalignment was realized in a 2×4 90° optical hybrid, and the ellipse correction(EC) method of quadrature imbalance was applied in our simulation. In the case of transmission,the EC method can significantly improve the system performance.

关键词： offset quadrature phase shift keying (OQPSK) quadrature imbalance (QI) ellipse fitting frequency offset

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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells

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Chinese Physics B 2015年第2期24卷 237-241页

作者：王强冀子武王帆牟奇郑雨军徐现刚吕元杰冯志红 School of Physics Shandong University School of Science Qilu University of Technology State Key Laboratory of Crystal Materials Shandong University National Key Laboratory of Application Specific Integrated Circuit(ASIC) Hebei Semiconductor Research Institute

The photoluminescence（PL） properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots（QDs） and an InGaN matrix in the InGaN epilayer are *** excitation power dependences of QD-related green emissions（PD〉） and matrix-related blue emissions（PM） in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both Pm and PD are dominated by the combined action of Coulomb screening and localized state filling ***,at 300 K,Pm is dominated by the non-radiative recombination of the carriers in the InGaN matrix,while PD is influenced by the carriers transferred from the shallower QDs to deeper QDs by *** is consistent with the excitation power dependence of the PL efficiency for the emission.

关键词： photoluminescence InGaN quantum wells phase separation

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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films

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SCIENCE CHINA Information Sciences 2025年第6期68卷

作者： Yu-Chun LI Xiao-Xi LI Zhongshan XU Zi-Ying HUANG Yingguo YANG Xiao-Na ZHU Ming LI David Wei ZHANG Hong-Liang LU State Key Laboratory of Application-Specific Integrated Circuit and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Shanghai 200433 China Zhangjiang Fudan International Innovation Center Shanghai 201203 China National Integrated Circuit Innovation Center Shanghai 201203 China Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi'an 710071 China Jiashan Fudan Institute Jiaxing 314100 China School of Integrated Circuits Peking University Beijing 100871 China

Hafnium oxide (HfO$_2$) is a promising ferroelectric material because of its robust electric dipoles at the nanoscale. Although HfO$_2$ is an oxygen-displacement-induced ferroelectric material, a comprehensive understanding of the intricate relationship between its electrical performance and oxygen-related processes is still limited. This study delves into the ferroelectric and dielectric properties of Zr-doped HfO$_2$ (Hf$_{0.5}$Zr$_{0.5}$O$_2$, HZO) thin films, unveiling a reliance on the oxygen dose during the atomic layer deposition process. A superior remanent polarization ($2P_r$) of 58 $\upmu~$C/cm$^2$ and a high dielectric constant of 52.7 are obtained in the HZO capacitors with 10 and 1 s oxygen plasma durations, respectively. Our work establishes that the enhanced ferroelectricity observed in samples with longer oxygen dose time is attributed to the gradual out-of-plane orientation of the polar c-axis, as indicated by grazing incidence wide-angle X-ray scattering analysis. Meanwhile, the larger dielectric constant observed in samples with the shortest oxygen dose time (1 s) originates from the out-of-plane tilt of the b-axis in an orthorhombic-phase cell. These new insights into the controlled crystal orientation through oxygen dose modulation open avenues for optimizing the performance of the HfO$_2$-based devices.

关键词： ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ oxygen dose GIWAXS orientation dielectric

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Companding transform for PAPR reduction in coherent optical OFDM system

Companding transform for PAPR reduction in coherent optical ...

引用

International Conference on Wireless and Optical Communications ( WOCC)

作者： Xinying Li Li Tao Junwen Zhang Yuanquan Wang Yuan Fang Jiangbo Zhu Yiguang Wang Yufeng Shao Nan Chi Department of Communication Science and Engineering State Key Laboratory of Application Specific Integrated Circuit (ASIC) and System Fudan University Shanghai China

μ-law companding and de-companding, which enlarges small signals and compresses large signals, can work successfully in the CO-OFDM transmission system, and μ=1 is the optimal companding coefficient for PAPR reduction.

ISBN: (纸本)9781467309400;9781467309417;9781467309394

关键词： Peak to average power ratio Transforms Optical distortion Optical fibers Nonlinear optics

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Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices

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Chinese Journal of Electrical Engineering 2020年第3期6卷 25-34页

作者： Haidong Yan Peijie Liang Yunhui Mei Zhihong Feng School of Mechanical and Electrical Engineering Guilin University of Electronic TechnologyGuilin 541004China Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology Guilin 541004China School of Materials Science and Engineering Tianjin UniversityTianjin 300072China Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education Guilin 541004China National Key Lab of Application Specific Integrated Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China

Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power *** thermal conductivity,high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices,specifically SiC *** merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale,micro-scale and micro-nano-scale hybrid silver sintered materials are separately *** emerging rapid sintering approaches,such as the electric-assisted approach,are briefly introduced and the technical outlook is *** addition,the study highlights the importance of creating a brief resource guide on using the correct sintering methods.

关键词： Pressure-less sintering pressure-assisted nanosilver paste high-temperature power module insulated gate bipolar translators(IGBT) silicon carbide(SiC)

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Study on mechanism of al-enhanced etching of silicon by reactive ions in SF6/O2 environment

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Weixi Jiagong Jishu/Microfabrication Technology 2007年第1期 56-59页

作者： Cheng, Zheng-Xi Guo, Yu-Lin Zhou, Jia Application-Specific Integrated Circuit and System State Key Lab. Department of Microelectronics Fudan University Shanghai 200433 China

The mechanism of Al-enhanced etching of silicon by reactive ions in SF6/O2 environment was studied by experiment and statistical analysis. The results indicate that the Al-enhanced etching of silicon in SF6/O2 environment is little affected by other etching conditions. Simultaneously, the results also indicate that the enhancement effect of Al on etching rate of silicon does not result from the rise of the substrate temperature, but it mainly results from catalytic action of an AlF monolayer formed by Al, which A1F promotes decomposition of SF6 to produce more F radicals.

关键词： Al Catalytic action Reactive ion etching (RIE) SF6/O2

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A Microscopic Deep UV Imaging system with a Single Detector

A Microscopic Deep UV Imaging System with a Single Detector

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Yong Ma Jincheng He Yi Liu Longliang Yang Binzheng Liu Xingye Zhou Shixiong Liang Zhihong Feng College of Photoelectronic Engineering Chongqing University of Posts and Telecommunications Chongqing China State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body Hunan University Changsha China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute China

ISBN: (纸本)9781665409889

We present a microscopic deep UV imaging system that combines a single Avalanche Photo Diode (APD) detector and computational imaging technology for the deep ultraviolet wavebands (260–285 nm). The system consists of a deep UV light-emitting diode as the light source and a digital micromirror device (DMD) operational in the ultraviolet band as the spatial light modulator to modulate the light reflected from the microscopic objects in space domain. The (APD) detector is used to acquire the modulated light signal with the help of a focusing lens (lens 2). Compress Sensing sampling technology is used to code and decode the modulated light signal in order to obtain two dimensional imaging of the objects with only one single pixel detector. This deep UV microscopic imaging system provides promising way for various applications such as nondestructive characterization of semiconductor and/or biological samples.

关键词： Microscopy Imaging Modulation Detectors Avalanche photodiodes Sensors Semiconductor diodes

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A 350 C piezoresistive n-type 4H-SiC pressure sensor for hydraulic and pneumatic pressure tests

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Journal of Micromechanics and Microengineering 2020年第5期30卷

作者： Fang, Xudong Wu, Chen Zhao, Yulong Jiang, Zhuangde Rong, Weibing Feng, Zhihong Lv, Yuanjie State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies Collaborative Innovation Center of Suzhou Nano Science and Technology Xi'an Jiaotong University Xi'an710049 China School of Mechanical Engineering Xi'an Jiaotong University Xi'an710049 China State Key Laboratory of Robotics and System Harbin Institute of Technology Harbin150080 China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuang050051 China

It has been a challenge to develop pressure sensors that can work in harsh environments. In this work, a piezoresistive n-type 4H-SiC pressure sensor is demonstrated, capable of working at 350 C under hydraulic and pneumatic pressure. The pressure measuring range of this sensor is 7 MPa and the chip dimension is 2.5 mm 2.5 mm 0.23 mm. A reliable Ti/TaSi2/Pt metal ohmic contact is used in the sensor and experimental results show that the metal combination can withstand a wide temperature range of 30 C-350 C. In order to avoid thermal stress induced by the mismatch of thermal expansion coefficients of different packaging materials when increasing temperature, a double-layer bonding scheme of cement glue and epoxy is proposed. The inner layer of the chip and the kovar alloy base are directly bonded with the epoxy, while the outer layer is wrapped with the high-temperature cement glue. Experiments confirm that this method can achieve reliable packaging with temperatures up to 350 C for 5 h. Based on the above key technologies, the sensitivity of this sensor can reach 13.2 mV V-1 kPa-1 and the test data exhibit high linearity and repeatability. Static tests prove that the sensor has good media compatibility which can operate under a hydraulic pressure load at 220 C and a barometric pressure load under 350 C. The sensor in this work can provide a reference for pressure measurements at high temperature and in complex media environments. © 2020 IOP Publishing Ltd.

关键词： Pressure sensors

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