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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films

Science China(Information Sciences) 2025年第6期 204-212页

作者： Yu-Chun LI Xiao-Xi LI Zhongshan XU Zi-Ying HUANG Yingguo YANG Xiao-Na ZHU Ming LI David Wei ZHANG Hong-Liang LU State Key Laboratory of Application-Specific Integrated Circuit and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Zhangjiang Fudan International Innovation Center National Integrated Circuit Innovation Center Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Jiashan Fudan Institute School of Integrated Circuits Peking University

Hafnium oxide（HfO2） is a promising ferroelectric material because of its robust electric dipoles at the *** HfO2is an oxygen-displacement-induced ferroelectric material, a comprehensive understanding of the intricate relationship between its electrical performance and oxygen-related processes is still limited. This study delves into the ferroelectric and dielectric properties of Zr-doped HfO2(Hf0.5Zr0.5O2, HZO) thin films, unveiling a reliance on the oxygen dose during the atomic layer deposition process. A superior remanent polarization（2Pr） of 58 μC/cm2and a high dielectric constant of 52.7 are obtained in the HZO capacitors with 10 and 1 s oxygen plasma durations, respectively. Our work establishes that the enhanced ferroelectricity observed in samples with longer oxygen dose time is attributed to the gradual out-of-plane orientation of the polar c-axis, as indicated by grazing incidence wide-angle X-ray scattering analysis. Meanwhile,the larger dielectric constant observed in samples with the shortest oxygen dose time（1 s） originates from the out-of-plane tilt of the b-axis in an orthorhombic-phase cell. These new insights into the controlled crystal orientation through oxygen dose modulation open avenues for optimizing the performance of the HfO2-based devices.

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Multi-GNSS simulation and its positioning performance for static and dynamic users 6

Multi-GNSS simulation and its positioning performance for st...

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6th International Symposium on Autonomous systems, ISAS 2023

作者： Li, Kun Gao, Mengzhi Zheng, Shuaiyong Wang, Xuanwen Jin, Xiaoqin Yang, Peng Yang, Jianlei Lu, Jing Yao, Gaole Tianjin University of Technology School of Integrated Circuit Science and Engineering Tianjin China Nankai University College of Artificial Intelligence Tianjin China Tianjin University of Technology School of Computer Science and Engineering Tianjin China The 54th Research Institute of China Electronics Technology Group Corporation State Key Laboratory of Satellite Navigation System and Equipment Technology Shijiazhuang China Land Satellite Remote Sensing Application Center Ministry of Natural Resources Beijing China Tianjin AtoN Division The Navigation Guarantee Centre of North China Sea Tianjin China

ISBN: (纸本)9798350316155

Global navigation satellite system plays an important role in military and civil fields, providing global positioning, navigation and timing services in real time. Unfortunately, the services provided by single constellation or double constellations cannot meet the requirements of high-level navigation, and there are still some problems such as low positioning accuracy and low number of visible satellites at specific circumstances to be solved. In this paper, multi-GNSSs are constructed and their global positioning performance is analyzed with respect to static and dynamic users. Results show that with more constellations, the position dilution of precision is decreased, and the number of visible satellites and the positioning accuracy are improved, which reveals that compared with single constellation or double constellations, multi-GNSSs can obviously improve the positioning performance. The methodology proposed can serve as a technical reference for national integrated PNT systems. © 2023 IEEE.

关键词： Navigation

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Hydrogen-Terminated Diamond Field Effect Transistor with Ceb6/Al2o3 Materials

SSRN

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SSRN 2022年

作者： Minghui, Zhang Wang, Wei Chen, Genqiang Wen, Feng Lin, Fang Wang, Fei He, Shi Wang, Yanfeng Fan, Shuwei Bu, Renan Min, Tai Yu, Cui Wang, Hongxing Key Laboratory of Physical Electronics and Devices Ministry of Education School of Electronic Science and Engineering Xi'an Jiaotong University Shaanxi Xi’an710049 China State Key Laboratory for Mechanical Behavior of Materials Center for Spintronics and Quantum System School of Materials Science and Engineering Xi’an Jiaotong University Shaanxi Xi’an710049 China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Hebei Shijiazhuang050051 China

In this work, we demonstrate a Hydrogen-terminated (H-terminated) diamond FET with CeB6/Al2O3 materials. The CeB6 and Al2O3 film have been deposited by electron beam evaporation and atomic layer deposition technique. The leakage current density of the device is -1.5×10-7 mA/mm at gate voltage of -15 V. The device demonstrates a p-type normally-on characteristics, whose maximum drain-source current density, threshold voltage, on/off ratio, saturation carrier mobility and carrier density are of -90.6 mA/mm, 8.9 V, 108, 259.7 cm2/V·s and 2.09×1013 cm-2, respectively. This work may provide a promising strategy for the development and application of H-terminated diamond FETs significantly. © 2022, The Authors. All rights reserved.

关键词： Aluminum oxide

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Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices

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Chinese Journal of Electrical Engineering 2020年第3期6卷 25-34页

作者： Haidong Yan Peijie Liang Yunhui Mei Zhihong Feng School of Mechanical and Electrical Engineering Guilin University of Electronic TechnologyGuilin 541004China Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology Guilin 541004China School of Materials Science and Engineering Tianjin UniversityTianjin 300072China Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education Guilin 541004China National Key Lab of Application Specific Integrated Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China

Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power *** thermal conductivity,high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices,specifically SiC *** merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale,micro-scale and micro-nano-scale hybrid silver sintered materials are separately *** emerging rapid sintering approaches,such as the electric-assisted approach,are briefly introduced and the technical outlook is *** addition,the study highlights the importance of creating a brief resource guide on using the correct sintering methods.

关键词： Pressure-less sintering pressure-assisted nanosilver paste high-temperature power module insulated gate bipolar translators(IGBT) silicon carbide(SiC)

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A Microscopic Deep UV Imaging system with a Single Detector

A Microscopic Deep UV Imaging System with a Single Detector

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Yong Ma Jincheng He Yi Liu Longliang Yang Binzheng Liu Xingye Zhou Shixiong Liang Zhihong Feng College of Photoelectronic Engineering Chongqing University of Posts and Telecommunications Chongqing China State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body Hunan University Changsha China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute China

ISBN: (纸本)9781665409889

We present a microscopic deep UV imaging system that combines a single Avalanche Photo Diode (APD) detector and computational imaging technology for the deep ultraviolet wavebands (260–285 nm). The system consists of a deep UV light-emitting diode as the light source and a digital micromirror device (DMD) operational in the ultraviolet band as the spatial light modulator to modulate the light reflected from the microscopic objects in space domain. The (APD) detector is used to acquire the modulated light signal with the help of a focusing lens (lens 2). Compress Sensing sampling technology is used to code and decode the modulated light signal in order to obtain two dimensional imaging of the objects with only one single pixel detector. This deep UV microscopic imaging system provides promising way for various applications such as nondestructive characterization of semiconductor and/or biological samples.

关键词： Microscopy Imaging Modulation Detectors Avalanche photodiodes Sensors Semiconductor diodes

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Crystal orientation-modulated ferroelectric and dielectric properties in Hf0.5Zr0.5O2 thin films

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Science China Information Sciences 2025年第6期68卷

作者： Li, Yu-Chun Li, Xiao-Xi Xu, Zhongshan Huang, Zi-Ying Yang, Yingguo Zhu, Xiao-Na Li, Ming Zhang, David Wei Lu, Hong-Liang State Key Laboratory of Application-Specific Integrated Circuit and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Shanghai200433 China Zhangjiang Fudan International Innovation Center Shanghai201203 China National Integrated Circuit Innovation Center Shanghai201203 China Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xidian University Xi’an710071 China Jiashan Fudan Institute Jiaxing314100 China School of Integrated Circuits Peking University Beijing100871 China

Hafnium oxide (HfO2) is a promising ferroelectric material because of its robust electric dipoles at the nanoscale. Although HfO2 is an oxygen-displacement-induced ferroelectric material, a comprehensive understanding of the intricate relationship between its electrical performance and oxygen-related processes is still limited. This study delves into the ferroelectric and dielectric properties of Zr-doped HfO2 (Hf0.5Zr0.5O2, HZO) thin films, unveiling a reliance on the oxygen dose during the atomic layer deposition process. A superior remanent polarization (2Pr) of 58 µC/cm2 and a high dielectric constant of 52.7 are obtained in the HZO capacitors with 10 and 1 s oxygen plasma durations, respectively. Our work establishes that the enhanced ferroelectricity observed in samples with longer oxygen dose time is attributed to the gradual out-of-plane orientation of the polar c-axis, as indicated by grazing incidence wide-angle X-ray scattering analysis. Meanwhile, the larger dielectric constant observed in samples with the shortest oxygen dose time (1 s) originates from the out-of-plane tilt of the b-axis in an orthorhombic-phase cell. These new insights into the controlled crystal orientation through oxygen dose modulation open avenues for optimizing the performance of the HfO2-based devices. © Science China Press 2025.

关键词： Ferroelectricity

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THz-TDS Confocal Imaging of Banknote Anti-counterfeiting Labels

THz-TDS Confocal Imaging of Banknote Anti-counterfeiting Lab...

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International Conference on Infrared and Millimeter Waves

作者： Ma Yong Liu Yi He Jincheng Yang Longliang Yang Lihao Liu Bowen Xiao Huiyun Pan Wu Zhou Xingye Liang Shixiong Feng Zhihong College of Photoelectronic Engineering Chongqing University of Posts and Telecommunications Chongqing P. R. China State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body Hunan University Changsha China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuang China

In this paper, we demonstrate terahertz imaging of banknote anti-counterfeiting labels by using the THz-TDS confocal imaging system built in our lab. With help of this system, spatial resolution is significantly improved and detail Characters of the anti-counterfeiting labels can be identified. Areas of the multiple overlapping banknotes papers with different number of layers are imaged and distinguished by measuring the time delay and absorption of the THz pulse that transmits through banknotes papers. This technology provides a contactless and nondestructive and high spatial resolution method for screening of banknotes, compared with the conventional THz imaging system.

关键词： Pulse measurements Absorption Delay effects Area measurement Imaging Time measurement Spatial resolution

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Multi-GNSS simulation and its positioning performance for static and dynamic users

Multi-GNSS simulation and its positioning performance for st...

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International Symposium on Autonomous systems (ISAS)

作者： Kun Li Mengzhi Gao Shuaiyong Zheng Xuanwen Wang Xiaoqin Jin Peng Yang Jianlei Yang Jing Lu Gaole Yao School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin China College of Artificial Intelligence Nankai University Tianjin China School of Computer Science and Engineering Tianjin University of Technology Tianjin China State Key Laboratory of Satellite Navigation System and Equipment Technology The 54th Research Institute of China Electronics Technology Group Corporation Shijiazhuang China Land Satellite Remote Sensing Application Center Ministry of Natural Resources Beijing China Tianjin AtoN Division The Navigation Guarantee Centre of North China Sea Tianjin China

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A 350 C piezoresistive n-type 4H-SiC pressure sensor for hydraulic and pneumatic pressure tests

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Journal of Micromechanics and Microengineering 2020年第5期30卷

作者： Fang, Xudong Wu, Chen Zhao, Yulong Jiang, Zhuangde Rong, Weibing Feng, Zhihong Lv, Yuanjie State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies Collaborative Innovation Center of Suzhou Nano Science and Technology Xi'an Jiaotong University Xi'an710049 China School of Mechanical Engineering Xi'an Jiaotong University Xi'an710049 China State Key Laboratory of Robotics and System Harbin Institute of Technology Harbin150080 China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuang050051 China

It has been a challenge to develop pressure sensors that can work in harsh environments. In this work, a piezoresistive n-type 4H-SiC pressure sensor is demonstrated, capable of working at 350 C under hydraulic and pneumatic pressure. The pressure measuring range of this sensor is 7 MPa and the chip dimension is 2.5 mm 2.5 mm 0.23 mm. A reliable Ti/TaSi2/Pt metal ohmic contact is used in the sensor and experimental results show that the metal combination can withstand a wide temperature range of 30 C-350 C. In order to avoid thermal stress induced by the mismatch of thermal expansion coefficients of different packaging materials when increasing temperature, a double-layer bonding scheme of cement glue and epoxy is proposed. The inner layer of the chip and the kovar alloy base are directly bonded with the epoxy, while the outer layer is wrapped with the high-temperature cement glue. Experiments confirm that this method can achieve reliable packaging with temperatures up to 350 C for 5 h. Based on the above key technologies, the sensitivity of this sensor can reach 13.2 mV V-1 kPa-1 and the test data exhibit high linearity and repeatability. Static tests prove that the sensor has good media compatibility which can operate under a hydraulic pressure load at 220 C and a barometric pressure load under 350 C. The sensor in this work can provide a reference for pressure measurements at high temperature and in complex media environments. © 2020 IOP Publishing Ltd.

关键词： Pressure sensors

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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells

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Chinese Physics B 2015年第2期24卷 237-241页

作者：王强冀子武王帆牟奇郑雨军徐现刚吕元杰冯志红 School of Physics Shandong University School of Science Qilu University of Technology State Key Laboratory of Crystal Materials Shandong University National Key Laboratory of Application Specific Integrated Circuit(ASIC) Hebei Semiconductor Research Institute

The photoluminescence（PL） properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots（QDs） and an InGaN matrix in the InGaN epilayer are *** excitation power dependences of QD-related green emissions（PD〉） and matrix-related blue emissions（PM） in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both Pm and PD are dominated by the combined action of Coulomb screening and localized state filling ***,at 300 K,Pm is dominated by the non-radiative recombination of the carriers in the InGaN matrix,while PD is influenced by the carriers transferred from the shallower QDs to deeper QDs by *** is consistent with the excitation power dependence of the PL efficiency for the emission.

关键词： photoluminescence InGaN quantum wells phase separation

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