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Science China materials 2023年第12期66卷 4773-4781页

作者：单欣刘平王芳谢杨杨魏俊青马泽夏石瑶孙翰鲁世豪宋志棠闫小兵张楷亮 School of Materials Science and Engineering Tianjin University of TechnologyTianjin 300384China Tianjin Key Laboratory of Film Electronic&Communication Devices School of Integrated Circuit Science and EngineeringTianjin University of TechnologyTianjin 300384China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Electronic and Information Engineering Hebei UniversityBaoding 071000China

二维过渡金属氧化物材料的出现为高密度、低功耗的忆阻器研究提供了机会.其中,α-MoO_(3)作为功能层应用于忆阻器是最有希望的候选材料之一.然而,对α-MoO_(3)基忆阻器的导电机制的研究仍然不足.本工作中,我们制作了cross-point结构的α... 详细信息

二维过渡金属氧化物材料的出现为高密度、低功耗的忆阻器研究提供了机会.其中,α-MoO_(3)作为功能层应用于忆阻器是最有希望的候选材料之一.然而,对α-MoO_(3)基忆阻器的导电机制的研究仍然不足.本工作中,我们制作了cross-point结构的α-MoO_(3)忆阻器,通过电极工程优化了其忆阻性能,并详细研究了其电阻转变机制.通过引入具有Ag/Ti叠层结构的混合电极实现了多值非挥发性存储性能.基于电流-电压曲线拟合和温度依赖特性测试结果,结合高分辨透射电镜微观表征,我们提出了α-MoO_(3)忆阻器的双重导电机制.在电阻转变过程中,阳离子和阴离子的迁移都对电导调制有贡献,两种由Ag和氧空位组成的导电丝同时存在.该器件展现出稳定的忆阻特性,超过103的耐久性、大于104的开关比ROFF/RON、多值存储特性和快速响应(10μs).本工作为二维α-MoO_(3)纳米片在高密度存储中的应用提供了理论基础.

关键词： 2Dα-MoO_(3) multi-level storage dual-conductivity mechanism electrode engineering

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Copper-Catalyzed Asymmetric Hydroamination:A Unified Strategy for the Synthesis of Chiralβ-Amino Acid and Its Derivatives

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CCS Chemistry 2021年第7期3卷 1737-1745页

作者： Ge Zhang Yujie Liang Tao Qin Tao Xiong Shuyu Liu Wei Guan Qian Zhang Department of Chemistry Jilin Province Key Laboratory of Organic Functional Molecular Design&SynthesisNortheast Normal UniversityChangchun 130024 Department of Chemistry Institute of Functional Material ChemistryNortheast Normal UniversityChangchun 130024 State Key Laboratory of Organometallic Chemistry Shanghai Institute of Organic ChemistryChinese Academy of SciencesShanghai 200032

Catalytic asymmetric aza-Michael represents one of the most convenient and atom-economical approaches for the rapid construction of biologically active chiralβ-amino acid ***,the direct enantioselective addition of nitrogen-based nucleophiles to intrinsically low reactivity ofα,β-unsaturated carboxylic acid,ester,and amide,as well as simpleα,β-unsaturated nitrile,remains a long-standing challenge.

关键词： asymmetric catalysis reversal hydroamination chiralβ-amino acid and its derivatives copper catalysis Michael acceptors

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Machine learning for semiconductors

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Chip 2022年第4期1卷 66-81页

作者： Duan-Yang Liu Li-Ming Xu Xu-Min Lin Xing Wei Wen-Jie Yu Yang Wang Zhong-Ming Wei State Key Laboratory of Superlattices and Microstructures Institute of Semicon-ductorsChinese Academy of SciencesBeijing 100083China Computer Net-work Information Center Chinese Academy of SciencesBeijing 100083China College of Mathematics and Physics Beijing University of Chemical Technol-ogyBeijing 100029China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChi-nese Academy of SciencesShanghai 200050China Center of Materials Sci-ence and Optoelectronics Engineering University of Chinese Academy of Sci-encesBeijing 100049China

Thanks to the increasingly high standard of electronics,the semiconductor material science and semiconductor manufacturing have been booming in the last few decades,with massive data accumulated in both *** analyzed effectively,the data will be conducive to the discovery of new semiconductor materials and the development of semicondulctor ***,machine learning,as a fast-growing tool from computer science,is expected to significantly speed up the data *** recently years,many researches on machine learning study of semiconductor materials and semiconductor manufacturing have been *** article is aimed to introduce these progress and present some prospects in this field.

关键词： learning massive manufacturing

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Halide vapor phase epitaxy of monolayer molybdenum diselenide single crystals

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National Science Open 2023年第4期2卷 55-64页

作者： Taotao Li Yang Yang Liqi Zhou Wenjie Sun Weiyi Lin Lei Liu Xilu Zou Si Gao Yuefeng Nie Yi Shi Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China School of Electronic Science and Engineering Xiamen UniversityXiamen 361005China College of Material Science and Engineering Nanjing Tech UniversityNanjing 201110China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215000China

Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and *** this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide(MoSe_(2))single crystals,in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD *** with the epitaxial sapphire substrate,unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe_(2) films have been demonstrated on a 2-inch wafer for the first time.A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe_(2).This work provides a universal strategy for the growth of TMD single-crystal films.

关键词： halide vapor phase epitaxy single-crystal molybdenum diselenide 2D semiconductor wafer-scale

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Catalytic effect of carbon-based electrode materials in energy storage devices

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Science China materials 2022年第12期65卷 3229-3242页

作者： Huicong Xia Lingxing Zan Yifan Wei Kai Guo Wenfu Yan Dehui Deng Jia-Nan Zhang School of Materials Science and Engineering Zhengzhou UniversityZhengzhou 450001China State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023China Key Laboratory of Chemical Reaction Engineering of Shaanxi Province College of Chemistry&Chemical EngineeringYan’an UniversityYan’an 716000China State Key Laboratory of Inorganic Synthesis and Preparative Chemistry and College of Chemistry Jilin UniversityChangchun 130012China Key Laboratory of Advanced Energy Catalytic and Functional Material Preparation of Zhengzhou City Zhengzhou 450012China

The catalytic effect of electrode materials is one of the most crucial factors for achieving efficient electrochemical energy conversion and ***-based metal composites were widely synthesized and employed as electrode materials because of their inherited outstanding ***,electrode materials can provide a higher capacity than the anticipated values,even beyond the theoretical *** origin of the extra capacity has not yet been explained accurately,and its formation mechanism is still ***,we first summarized the current research progress and drawbacks in energy storage devices(ESDs),and elaborated the role of catalytic effect in enhancing the performance of ESDs as follows:promoting the evolution of the solid electrolyte interphase(SEI),accelerating the reversible conversion of discharge/charge products,and improving the conversion speed of the intermediate and the utilization rate of the active materials,thereby avoiding the shuttling ***,a particular focus was placed on the interaction between the catalytic effect and energy storage performance in order to highlight the efficacy and role of the catalytic *** hope that this review could provide innovative ideas for designing the electrode materials with an efficient catalytic effect for ESDs to promote the development of this research field.

关键词： carbon-based metal composites catalytic effect reversible conversion energy storage devices

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Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2ferroelectric film with in-situ rapid thermal annealing

Atomic visualization of the emergence of orthorhombic phase ...

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2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

作者： Xin, Tianjiao Zheng, Yonghui Cheng, Yan Du, Kai Wang, Yiwei Gao, Zhaomeng Su, Diqing Zheng, Yunzhe Zhong, Qilan Liu, Cheng Huang, Rong Duan, Chungang Song, Sannian Song, Zhitang Lyu, Hangbing Department of Electronics Shanghai China State Key Laboratory of Functional Materials for Informatics Chinese Academy of Sciences Shanghai Institute of Microsystem and Information Technology Shanghai China Huawei Technologies Co. Shenzhen China Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665497725

For the first time, the dynamic process of orthorhombic (o-) phase emergence during rapid thermal annealing in polycrystalline Hf0.5Zr0.5O2 (HZO) ferroelectric film was directly visualized though in-situ spherical aberration corrected transmission electron microscopy technique. We have the following main observations: (1) o-phase nucleates from centrosymmetric tetragonal (t-) phase at top TiN/HZO interface where the oxygen vacancy (Vo) concentration is rich, identifying that Vo is helpful to lower the free energy of o-phase;(2) o-phase appears in both heating up and cooling down stages. The o-phase formed in the heating stage rapidly transforms into t-phase again as the temperature further increasing, and the one formed in the cooling stage is retained. These findings provide solid evidence on the o-phase origin in fluorite-type ferroelectric materials. © 2022 IEEE.

关键词： Free energy

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Flexible Graphene Transistor with Recorded Extrinsic Fmax

SSRN

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SSRN 2023年

作者： Wu, Yun Li, Zhonghui Yu, Guanghui Cao, Zhengyi Wei, Zhongxia Tao, Ran Gu, Chenyi Yu, Xinxin Zhang, Yanhui CETC Key Laboratory of Carbon-based Electronics Nanjing Electronic Device Institute Nanjing210016 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

Graphene is a very promising candidate for applications in flexible electronics due to its high carrier mobility and mechanical flexibility, but few suitable preparation methods for flexible RF devices have been found to date. In this paper, a novel preparation method for flexible transistor arrays based on CVD graphene and mica substrate preparation method which can significantly improve the performance was studied, which shown significant improvement of the device performance and the device shown a perfect compatibility between the good RF performances and the mechanical flexibility. The area of the device arrays reached 3cm×3cm, and the curvature radius can be as small as 5 mm. The on-state current density of 1.25 mA/μm at Vds=0.5V was much larger than other flexible transistors, and recorded extrinsic cutoff frequency (fT) of 66 GHz together with power-gain cutoff frequency (fmax) of 73 GHz for flexible graphene transistors were achieved. In addition, the DC and RF characteristics of transistors at different drain-source voltages Vds and temperatures indicate the dominant influence of self-heating and environmental temperature on the device performance, which is of great significance for further improving device performance. © 2023, The Authors. All rights reserved.

关键词： Graphene transistors

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A 1S1R Model with the Monte Carlo Function for Subthreshold Sensing Operation

A 1S1R Model with the Monte Carlo Function for Subthreshold ...

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： Qiuyao Yu Yu Lei Zhitang Song GuangMing Zhang Houpeng Chen State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences Shanghai China Shanghai Nanotechnology Promotion Center Shanghai China

3-D cross-point Phase change memory (PCM) is one of the most promising next-generation nonvolatile memory for storage-class memories., and the subthreshold sensing strategy can effectively improve its limited endurance. For the first time, we propose a one-selector-one-resistor (1S1R) model with Monte Carlo (MC) function. Based on this model, we analyze the device/array/circuit parameters setting requirements for subthreshold sensing. The bit line voltage and the array should be less than 2.96V and 2k, respectively. The sensing time of the 512b array should be longer than 220ns. A large selected cell current $(\mathbf{I}_{\mathbf{c}\mathbf{e}\mathbf{ll}})$ difference is always accompanied by a large leakage current $(\mathbf{I}_\mathbf{leak})$ difference, which severely limits array size. The bias voltage $(\mathbf{V}_{\mathbf{b}\mathbf{i}\mathbf{a}\mathbf{s}})$ adjustment scheme could increase the array size, but also the power consumption. The leakage current compensation scheme should adjust the compensation current dynamically as the variation of $\mathbf{I}_{\text{cell}}$ is large.

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Revealing the role of site occupation in phase stability,magnetic and electronic properties of Ni-Mn-In alloys by ab initio approach

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Journal of materials Science & Technology 2021年第24期83卷 90-101页

作者： Xinzeng Liang Jing Bai Ziqi Guan Jianglong Gu Haile Yan Yudong Zhang Claude Esling Xiang Zhao Liang Zuo Key Laboratory for Anisotropy and Texture of Materials Northeastern UniversityShenyang110819China School of Resources and Materials Northeastern University at QinhuangdaoQinhuangdao066004China State Key Laboratory of Metastable Materials Science and Technology Yanshan UniversityQinhuangdao066004China Key Laboratory of Dielectric and Electrolyte Functional Material Hebei Province Qinhuangdao066004China Laboratoire d'Étude des Microstructures et de Mécanique des Matériaux LEM3 CNRSUMR 7239University of Lorraine57045MetzFrance

The effects of site occupation on the phase stability,martensitic transformation,and the magnetic and electronic properties of a full series of Ni-Mn-In alloys are theoretically studied by using the ab initio *** indicate that the excess atoms of the rich component directly take the sublattices of the deficient components of the Ni2Mn_(1+x)In_(1-x),Ni2-xMn_(1+x)In,and Ni_(2+x)Mn_(1-x)In ***,the mixed and indirect site occupations may coexist in the Ni_(2+x)Mn In_(1-x)*** relevant magnetic configurations of the austenite for the four alloy systems have also been *** results show that,except for the austenite in the Ni2-xMn_(1+x)In alloys,which tend to be ferrimagnetic,the other alloys all present ferromagnetic ***,the site occupation and associated magnetic states are the crucial influencing factors of the phase stability,martensitic transformation,and the total magnetic *** electronic structure of the austenite phase also shows that the covalent bonding plays an important role in the phase *** key finding of this work is both Ni2Mn_(1+x)In_(1-x)and Ni_(2+x)Mn In_(1-x)alloys serve as the potential shape memory alloys.

关键词： Ni-Mn-In Ab initio calculations Site occupation Phase stability Magnetic property

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Plasma-Induced Defect Formation on Hexagonal Boron Nitride Surface

SSRN

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SSRN 2024年

作者： Chen, Lingxiu Sun, Qingxu Sun, Hongyu Wu, Junyuan Jiang, Chengxin Zhang, Yang Shi, Liwei Wang, Haomin School of Materials Science and Physics China University of Mining and Technology Xuzhou221116 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

Defect formation is inevitable in the preparation and application of two-dimensional (2D) materials, profoundly impacting their properties. Surface defects can also be used as reaction sites to achieve functional doping of 2D materials. Therefore, achieving controllable formation and application of defects in 2D materials is crucial. In this study, we utilize a remote plasma-enhanced chemical vapor deposition (R-PECVD) system to carry out controllable induced defects on hexagonal boron nitride (h-BN) surface. Atomic force microscopy (AFM) friction images and oxygen etching experiments confirm the efficacy of defect formation, with observed etching patterns indicating defect depths. Graphene growth experiments on h-BN substrates treated with varying plasma powers demonstrate a correlation between defect density and graphene nucleation density. Subsequent preparation of graphene films on defect-induced h-BN surfaces highlight the potential for enhancing graphene coverage. These findings offer a feasible solution for the functional modification and defect application of 2D materials. © 2024, The Authors. All rights reserved.

关键词： Nucleation

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