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检索条件"机构=State Key Laboratory of Microelectronics Device and Integrated Technology"
683 条 记 录,以下是1-10 订阅
排序:
Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
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Science China(Information Sciences) 2025年 第1期68卷 379-385页
作者: Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation
In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor(MIS) cascode anode GaN lateral field-effect diode(CA-LFED) to achieve ultralow reverse leakage current(ILEAK).The device based on AlGa... 详细信息
来源: 评论
Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform
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Opto-Electronic Advances 2025年 第1期8卷 59-70页
作者: Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China
The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing li... 详细信息
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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes
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IEEE Microwave and Wireless technology Letters 2025年 第4期35卷 444-447页
作者: Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China
Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of ... 详细信息
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Hardware implementation of speech recognition in noise-resilient photonic spiking neural network with rate-coding
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Journal of Lightwave technology 2025年 第12期43卷 5789-5796页
作者: Han, Yanan Xiang, Shuiying Huang, Zhiquan Zou, Tao Zhang, Yuna Zheng, Dianzhuang Li, Yiheng Wang, Yizhi Zhang, Yahui Guo, Xingxing Hao, Yue Xidian University State Key Laboratory of Integrated Service Networks Xi'an710071 China Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xi'an710071 China Soochow University Key Lab of Modern Optical Technologies of Education Ministry of China Suzhou215006 China
Photonic neuromorphic computing is a combination of optics and brain-like computing, offering a promising alternative to traditional von Neumann architectures by enabling high-speed, low-latency, and energy-efficient ... 详细信息
来源: 评论
A Valuable and Low-Budget Process Scheme of Equivalized 1 nm technology Node Based on 2D Materials
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Nano-Micro Letters 2025年 第8期17卷 294-305页
作者: Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian College of Integrated Circuit Science and Engineering Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241People’s Republic of China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China Shaoxin Laboratory Shaoxing 312000People’s Republic of China
Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level *** the stacking process advances,the complexity and cost of nanosheet... 详细信息
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Linear Tuning of Positive Threshold Voltage in IGZO Thin-Film Transistors via Gate Dielectric Stack Engineering
IEEE Electron Device Letters
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IEEE Electron device Letters 2025年 第5期46卷 781-784页
作者: Yan, Gangping Yang, Yanyu Tai, Lu Chen, Yuting Ma, Xueli Xiang, Jinjuan Xu, Gaobo Wang, Guilei Yin, Huaxiang Zhao, Chao Beijing Superstring Academy of Memory Technology Beijing100176 China Institute of Microelectronics of the Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China
The positive threshold voltage (VTH) tuning in InGaZnO (IGZO) thin-film transistors (TFTs) has become an urgent issue. In this work, the effect of different ultrathin gate dielectric interlayers (ILs) inserted between... 详细信息
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1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON
IEEE Electron Device Letters
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IEEE Electron device Letters 2025年 第5期46卷 805-808页
作者: Fan, Yutong Zhang, Weihang Zhang, Yachao Wu, Yinhe Feng, Xin Liu, Zhihong Jiang, Yang In Mak, Pui Hao, Yue Zhang, Jincheng Xidian University National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China Guangzhou Institute of Technology Xidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou510555 China Institute of Microelectronics University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China
In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-swi... 详细信息
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FSMM: An Efficient Matrix Multiplication Accelerator Supporting Flexible Sparsity  24
FSMM: An Efficient Matrix Multiplication Accelerator Support...
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43rd International Conference on Computer-Aided Design, ICCAD 2024
作者: Qiao, Yuxuan Yang, Fan Zhang, Yecheng Xiong, Xiankui Yao, Xiao Yao, Haidong State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai China School of Microelectronics Fudan University Shanghai China State Key Laboratory of Mobile Network and Mobile Multimedia Technology ZTE Corporation Shenzhen China
Sparse matrix multiplication is a critical operation in deep learning. However, matrix sparsity leads to irregular data flow, which would degrade the efficiency of matrix multiplication. Traditional accelerators, equi... 详细信息
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Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure
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Science China(Information Sciences) 2025年 第06期 397-398页
作者: Chenlu WANG Sihan SUN Chunxu SU Hong ZHOU Jincheng ZHANG Yue HAO State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University
β-Ga2O3has sparked a new wave of enthusiasm in the power community because of high-voltage and high-efficiency application demands, which is attributed to its superior ultrawide bandgap of 4.9 eV, theoretical critica...
来源: 评论
Electromagnetic Functions Modulation of Recycled By-Products by Heterodimensional Structure
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Nano-Micro Letters 2025年 第6期17卷 264-278页
作者: Ze Nan Wei Wei Zhenhua Lin Ruimei Yuan Miao Zhang Jincheng Zhang Jianyong Ouyang Jingjing Chang Hejun Li Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071People’s Republic of China State Key Laboratory of Solidification Processing Shaanxi Province Key Laboratory of Fiber Reinforced Light Composite MaterialsCarbon/Carbon Composites Research CenterNorthwestern Polytechnical UniversityXi’an 710072People’s Republic of China Advanced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi’an 710071People’s Republic of China Department of Materials Science and Engineering National University of Singapore7 Engineering Drive 1Singapore 117574Singapore
One of the significant technological challenges in safeguarding electronic devices pertains to the modulation of electromagnetic(EM)wave jamming and the recycling of defensive *** synergistic effect of heterodimension... 详细信息
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