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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

Science China(Information Sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform

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Opto-Electronic Advances 2025年第1期8卷 59-70页

作者： Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China

The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing light-matter ***,this task is challenging as the device performance is heavily dependent on the fabrication quality of the *** this paper,we present experimental validation of an etchless approach to fabricating high-Q photonic crystal nanobeam cavities(PCNBCs).We successfully fabricate PCNBCs with Q factors exceeding 105 while maintaining high transmittance by capitalizing on the low waveguide loss and high fabrication tolerance of TE-polarized ***,the Q factor achieved here exceeds previous reports on etchless LN PCNBCs by over an order of *** from this advancement,we further explore a variety of optical functions,including thermo-optic tuning,optically induced bistability,and Fano line shapes *** findings present promising prospects for a versatile platform technique,facilitating the development of high-performance electro-optic or acousto-optic modulators,optical logic devices,and quantum photonics,highlighting its significant impact in the field of photonic integration.

关键词： photonic crystal nanobeam cavity LNOI platform high Q thermo-optic tuning bistability Fano line shapes

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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

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IEEE Microwave and Wireless technology Letters 2025年第4期35卷 444-447页

作者： Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China

Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of 0.32 V, a cutoff frequency (fT) of 139.47 GHz, a breakdown voltage (Vb) of 30 V, and fT × Vb/Von figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting. © 2023 IEEE.

关键词： Gallium nitride

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Hardware implementation of speech recognition in noise-resilient photonic spiking neural network with rate-coding

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Journal of Lightwave technology 2025年第12期43卷 5789-5796页

作者： Han, Yanan Xiang, Shuiying Huang, Zhiquan Zou, Tao Zhang, Yuna Zheng, Dianzhuang Li, Yiheng Wang, Yizhi Zhang, Yahui Guo, Xingxing Hao, Yue Xidian University State Key Laboratory of Integrated Service Networks Xi'an710071 China Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xi'an710071 China Soochow University Key Lab of Modern Optical Technologies of Education Ministry of China Suzhou215006 China

Photonic neuromorphic computing is a combination of optics and brain-like computing, offering a promising alternative to traditional von Neumann architectures by enabling high-speed, low-latency, and energy-efficient computation. The spiking neural network (SNN), inspired by the brain's spatiotemporal encoding and processing mechanisms, employs sparse, event-driven spikes to achieve low power consumption. However, the inherent instability of optical devices presents challenges for precise computations, particularly in implementing both linear weight operations and nonlinear spiking activations. To address these challenges, this work explores algorithmic resilience as a pathway to enhance the robustness of photonic SNNs. We propose a noise-resilient photonic SNN architecture optimized for basic pattern classification tasks. Focusing on noise resilience and network performance, we adopt rate-coded SNNs trained using surrogate gradient methods, where noise is considered as a necessary factor in the algorithmic aspect. With rate coding, decisions are made based on the output spike rate or equivalently, the number of spikes, which is able to cope with nonlinear errors better compared to temporal coding. The proposed architecture is evaluated through online inference on the TIDIGITS dataset using a self-fabricated DFB-SA laser chip, and the final inference accuracy reaches 98.5%. © 1983-2012 IEEE.

关键词： Network coding

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A Valuable and Low-Budget Process Scheme of Equivalized 1 nm technology Node Based on 2D Materials

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Nano-Micro Letters 2025年第8期17卷 294-305页

作者： Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian College of Integrated Circuit Science and Engineering Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241People’s Republic of China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China Shaoxin Laboratory Shaoxing 312000People’s Republic of China

Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level *** the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to *** 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://***/),but not publicly confirmed,indicating that more possibilities still *** miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and *** this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and *** then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device *** these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power *** work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”*** the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power ***,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V *** work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

关键词： Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling

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Linear Tuning of Positive Threshold Voltage in IGZO Thin-Film Transistors via Gate Dielectric Stack Engineering

IEEE Electron Device Letters

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IEEE Electron device Letters 2025年第5期46卷 781-784页

作者： Yan, Gangping Yang, Yanyu Tai, Lu Chen, Yuting Ma, Xueli Xiang, Jinjuan Xu, Gaobo Wang, Guilei Yin, Huaxiang Zhao, Chao Beijing Superstring Academy of Memory Technology Beijing100176 China Institute of Microelectronics of the Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

The positive threshold voltage (VTH) tuning in InGaZnO (IGZO) thin-film transistors (TFTs) has become an urgent issue. In this work, the effect of different ultrathin gate dielectric interlayers (ILs) inserted between the high-κ HfO2 and IGZO is investigated based on the pristine VTH of +0.064 V optimized by IGZO sputtering and post-annealing. By specifically combining varying HfO2 thicknesses and IL types, this initial VTH is linearly modulated to +0.528 V in IGZO devices without noticeable sub-threshold swing (SS) and mobility degradation. Attributed to the dipole and fixed charge modulation at the interface, the devices with 7-nm HfO2 and 2-nm SiO2 IL exhibit optimal results, including the most positive VTH, a decent mobility of 12 cm2/Vċ s, a well-maintained SS of 84.7 mV/dec, and promoted positive and negative bias stress (PBS/NBS) stability. This VTH modulation technique provides useful guidance for 3D integration such as IGZO 3D-DRAM with high performance. © 1980-2012 IEEE.

关键词： Thin film transistors

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1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON

IEEE Electron Device Letters

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IEEE Electron device Letters 2025年第5期46卷 805-808页

作者： Fan, Yutong Zhang, Weihang Zhang, Yachao Wu, Yinhe Feng, Xin Liu, Zhihong Jiang, Yang In Mak, Pui Hao, Yue Zhang, Jincheng Xidian University National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China Guangzhou Institute of Technology Xidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou510555 China Institute of Microelectronics University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China

In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of 22~μ m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of 3.5× 10-4 mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance (RON, SP ) of 3.74 mΩ ċ cm2 were achieved, resulting in a forward power figure of merit (PFOM = V BR2 /RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V DS- OFF ) and a 10 ms -1900 V V DS- OFF (delay time = 1~μ s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results. © 1980-2012 IEEE.

关键词： Gallium nitride

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FSMM: An Efficient Matrix Multiplication Accelerator Supporting Flexible Sparsity 24

FSMM: An Efficient Matrix Multiplication Accelerator Support...

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43rd International Conference on Computer-Aided Design, ICCAD 2024

作者： Qiao, Yuxuan Yang, Fan Zhang, Yecheng Xiong, Xiankui Yao, Xiao Yao, Haidong State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai China School of Microelectronics Fudan University Shanghai China State Key Laboratory of Mobile Network and Mobile Multimedia Technology ZTE Corporation Shenzhen China

ISBN: (纸本)9798400710773

Sparse matrix multiplication is a critical operation in deep learning. However, matrix sparsity leads to irregular data flow, which would degrade the efficiency of matrix multiplication. Traditional accelerators, equipped with additional hardware units to address this issue, often experience the issue of low hardware utilization. Furthermore, N : M structured sparsity and corresponding hardware architectures face challenges such as accuracy degradation, limited flexibility, and restricted applicability. In this paper, we propose a Flexible Sparse Matrix Multiplication Accelerator (FSMM), which can improve the efficiency of sparse matrix multiplication through both algorithmic-level and hardware-level optimizations. At the algorithmic level, we propose the matrix-matrix multiplication with block-level outer production and fine-grained matrix reordering algorithm. The algorithm balances the sparsity of each column of a matrix block, which improves matrix compression, balances the load, and speeds up computation. This algorithm reduces storage by 8.2% ~ 85.9%. At the hardware-level, we introduce a flexible architecture for matrix multiplication. It selects the most suitable data path to complete matrix multiplication based on the sparsity of the reordered matrix. FSMM achieves a speedup of 1.90× ~ 16.18× over Systolic Array and 1.70× ~ 2.87× over the existing TSTC approach. © 2024 Copyright is held by the owner/author(s).

关键词： Fast response computer systems

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Breakdown voltage over 10 kV β-Ga2O3 heterojunction FETs with RESURF structure

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Science China(Information Sciences) 2025年第06期 397-398页

作者： Chenlu WANG Sihan SUN Chunxu SU Hong ZHOU Jincheng ZHANG Yue HAO State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

β-Ga2O3has sparked a new wave of enthusiasm in the power community because of high-voltage and high-efficiency application demands, which is attributed to its superior ultrawide bandgap of 4.9 eV, theoretical critica...

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Electromagnetic Functions Modulation of Recycled By-Products by Heterodimensional Structure

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Nano-Micro Letters 2025年第6期17卷 264-278页

作者： Ze Nan Wei Wei Zhenhua Lin Ruimei Yuan Miao Zhang Jincheng Zhang Jianyong Ouyang Jingjing Chang Hejun Li Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071People’s Republic of China State Key Laboratory of Solidification Processing Shaanxi Province Key Laboratory of Fiber Reinforced Light Composite MaterialsCarbon/Carbon Composites Research CenterNorthwestern Polytechnical UniversityXi’an 710072People’s Republic of China Advanced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi’an 710071People’s Republic of China Department of Materials Science and Engineering National University of Singapore7 Engineering Drive 1Singapore 117574Singapore

One of the significant technological challenges in safeguarding electronic devices pertains to the modulation of electromagnetic(EM)wave jamming and the recycling of defensive *** synergistic effect of heterodimensional materials can effectively enable the manipulation of EM waves by altering the *** we propose a novel approach for upcycling by-products of silver nanowires that can fabricate shape-tunable aerogels which enable the modulation of its interaction with microwaves by heterodimensional structure of ***-product heterodimensionality was used to design EM-wave-jamming-dissipation structures and therefore two typical tunable aerogel forms were *** first tunable form was aerogel film,which shielded EM interference(EMI shielding effectiveness(EMI SE)>89 dB)and the second tunable form was foam,which performed dual EM functions(SE>30 dB&reflective loss(RL)<-35 dB,effective absorption bandwidth(EAB)>6.7 GHz).We show that secondary recycled aerogels retain nearly all of their EM protection properties,making this type of closed-loop cycle an appealing *** findings pave the way for the development of adaptive EM functions with nanoscale regulation in a green and closed-loop cycle,and they shed light on the fundamental understanding of microwave interactions with heterodimensional structures.

关键词： Silver nanowires Electromagnetic shielding Microwave absorption Recycled aerogels

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