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Experimental and numerical demonstration of hierarchical time-delay reservoir computing based on cascaded VCSELs with feedback and multiple injections

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Science China(Information Sciences) 2024年第2期67卷 279-290页

作者： Xingxing GUO Shuiying XIANG Xingyu CAO Biling GU State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian University

In this paper, we propose and demonstrate experimentally and numerically a hierarchical timedelay optical reservoir computing(RC) system based on cascaded vertical-cavity surface-emitting lasers(VCSELs) with feedback and multiple injections. The prediction performance characteristics of the hierarchical time-delay RC system based on cascaded VCSELs under different reservoir layers are ***, the prediction performance of the hierarchical time-delay RC system is first improved and saturates as the number of reservoir layers increases. Besides, the impacts of key factors on predicting the hierarchical time-delay RC system are also analyzed in detail experimentally and numerically. This proposed hierarchical time-delay RC system based on VCSELs is useful for the further development of RC systems and may be beneficial to improve the ability of RC systems to solve more complex problems.

关键词： vertical-cavity surface-emitting laser reservoir computing neuromorphic photonics time-delay system information processing

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Wideband Circularly Polarized Substrate-integrated Waveguide Aperture-Coupled Metasurface Antenna Array for Millimeter-Wave Applications

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Chinese Journal of Electronics 2024年第6期33卷 1468-1477页

作者： Jiwei LIAN Chun GENG Xue LU Dazhi DING School of Microelectronics(School of Integrated Circuits) Nanjing University of Science and Technology State Key Laboratory of Millimeter Waves Southeast University Qian Xuesen College Nanjing University of Science and Technology

A wideband circularly polarized(CP) aperture-coupled metasurface antenna operating at millimeterwave frequency spectrum in substrate-integrated waveguide(SIW) technology is proposed. The proposed metasurface antenna is composed of two substrates. The first substrate contains an end-shorted SIW section with a slot *** introduced metasurface is printed on the top of the second substrate. The metasurface is comprised of 3 × 3 unit cells, each of which contains two interconnected patches and two parasitic patches. The working mechanism of the proposed metasurface antenna is illustrated in details. The proposed metasurface antenna has wide impedance bandwidth and axial ratio(AR) bandwidth, which are 66.7% and 40%, respectively. Using the proposed metasurface antenna, a 4 × 4 CP metasurface antenna array with an impedance bandwidth of 24%, an AR bandwidth of 30%, and a peak gain of 18.7 dBic in simulation is developed in this paper for millimeter-wave applications.

关键词： Antenna measurements Parametric study Millimeter wave technology Metasurfaces Aperture antennas Impedance Broadband antennas Substrates Wideband Antenna arrays

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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Science China(Information Sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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Controllable Synthesis of Au NRs and Its Flexible SERS Optical Fiber Probe with High Sensitivity

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Journal of Wuhan University of technology(Materials Science) 2024年第1期39卷 7-16页

作者：熊文豪 WANG Wenbo LONG Yuting 李宏 State Key Laboratory of Silicate Materials for Architectures Wuhan University of TechnologyWuhan 430070China National 111 Research Center Microelectronics and Integrated Circuits School of ScienceHubei University of TechnologyWuhan 430068China

The surface-enhanced Raman scattering(SERS) optical fiber probes were successfully prepared by self-assembling on polyelectrolyte multilayers. Gold nanorods(Au NRs) were used as SERS enhancement material to give excellent biological affinity and stability to the SERS optical fiber probes. Au NRs were synthesized by seed growth method. The synergistic effect between AgNO_(3) and surfactant was investigated, and the highest yield was found when AgNO_(3) was 500 uL. Meanwhile, different SERS optical fiber probes were obtained by selecting silane coupling agent, polyelectrolyte multilayer and graphene oxide(GO) to treat quartz fiber. It was found that the SERS optical fiber probes obtained by the self-assembled on polyelectrolyte multilayers method performed better than those by other methods. In addition, Mapping was combined with finite element simulation to analyze the electromagnetic field distribution at the fiber end *** electromagnetic field distribution of Au NRs was investigated, the difference of electromagnetic field intensity around the Au NRs with different arrangements was compared, the strongest signal was obtained when the Au NRs were head-to-head. Finally, sensitivity of the optimized SERS optical fiber probes could reach 10^(-9)mol/L, with excellent stability and repeatability.

关键词： surface-enhanced Raman scattering(SERS) optical fiber probe gold nanorods(Au NRs) polyelectrolyte multilayers controllable synthesis

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Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform

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Opto-Electronic Advances 2025年第1期8卷 59-70页

作者： Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China

The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing light-matter ***,this task is challenging as the device performance is heavily dependent on the fabrication quality of the *** this paper,we present experimental validation of an etchless approach to fabricating high-Q photonic crystal nanobeam cavities(PCNBCs).We successfully fabricate PCNBCs with Q factors exceeding 105 while maintaining high transmittance by capitalizing on the low waveguide loss and high fabrication tolerance of TE-polarized ***,the Q factor achieved here exceeds previous reports on etchless LN PCNBCs by over an order of *** from this advancement,we further explore a variety of optical functions,including thermo-optic tuning,optically induced bistability,and Fano line shapes *** findings present promising prospects for a versatile platform technique,facilitating the development of high-performance electro-optic or acousto-optic modulators,optical logic devices,and quantum photonics,highlighting its significant impact in the field of photonic integration.

关键词： photonic crystal nanobeam cavity LNOI platform high Q thermo-optic tuning bistability Fano line shapes

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Design memristor-based computing-in-memory for AI accelerators considering the interplay between devices, circuits, and system

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Science China(Information Sciences) 2023年第8期66卷 243-253页

作者： Junjie AN Linfang WANG Wang YE Weizeng LI Hanghang GAO Zhi LI Zhidao ZHOU Jinghui TIAN Jianfeng GAO Chunmeng DOU Qi LIU School of Microelectronics University of Science and Technology of China State key Lab of Fabrication Technologies for Integrated Circuits Institute of MicroelectronicsChinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences Frontier Institute of Chip and System State Key Laboratory of ASIC and System Fudan University

Recent advances in developing beyond von Neumann architectures have moved the memristive devices to the forefront as one of the key enablers to realizing memristive computing-in-memory(m CIM)structures, which shows a great promise to boost the energy-efficiency and the performance of artificial intelligence(AI) chips. In this study, by considering the interactions between devices, circuits, and systems in the m CIM design, we propose several cross-layer design techniques, including(1) the BL-SL interactive forming protection(BSIFP) circuit that can reduce the voltage drop on the selected transistor, suppress the current overshoot by 65.96%, and improve the bit-cell density by more than 10.19%,(2) the clamping transistor trimming scheme(CTTS) to prevent the multiply-and-accumulate(MAC) signal margin degradation from chip-to-chip resistance variations, and(3) dynamic input-parallelism and output-precision(DIPOP) that can reduce the energy cost by 22.92% in a typical inference task with negligible accuracy loss. The results demonstrate the significant role of the cross-layer-interactive approach and provide a preliminary guideline for highly-efficient m CIM design.

关键词： memristor resistive memory computing-in-memory artificial intelligence cross-layer co-design

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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

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IEEE Microwave and Wireless technology Letters 2025年第4期35卷 444-447页

作者： Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China

Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of 0.32 V, a cutoff frequency (fT) of 139.47 GHz, a breakdown voltage (Vb) of 30 V, and fT × Vb/Von figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting. © 2023 IEEE.

关键词： Gallium nitride

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Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

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Journal of Semiconductors 2024年第7期45卷 40-44页

作者： Yuting Chen Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao Beijing Superstring Academy of Memory Technology Beijing 100176China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

关键词： In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor

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Micromachined Infrared Thermopile Detector Based on a Suspended Film Structure

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Photonic Sensors 2023年第3期13卷 50-62页

作者： Cheng LEI Yihao GUAN Ting LIANG Xuezhan WU Yuehang BAI Mingfeng GONG Pingang JIA Jijun XIONG The State Key Laboratory of Dynamic Measurement Technology North University of ChinaTaiyuan 030051China Integrated Circuit Business Group China Resources Microelectronics LimitedWuxi 21400China

The micro-electromechanical system(MEMS)infrared thermopile is the core working device of modern information detection systems such as spectrometers,gas sensors,and remote temperature *** presented two different structures of MEMS infrared thermopiles based on suspended film *** both deposited silicon nitride over the entire surface as a passivated absorber layer in place of a separate absorber zone,and the thermocouple strip was oriented in the same direction as the temperature *** same MEMS preparation process was used and finally two different structures of the thermopile were characterized separately for testing to verify the impact of our design on the *** test results show that the circular and double-ended symmetrical thermopile detectors have responsivities of 27.932 V/W and 23.205 V/W,specific detectivities of 12.1×10^(7) cm·Hz^(1/2)·W^(-1) and 10.1×10^(7) cm·Hz^(1/2)·W^(-1),and response time of 26.2 ms and 27.06 ms,*** addition,rectangular double-ended symmetric thermopile has a larger field of view than a circular thermopile detector,but is not as mechanically stable as a circular thermopile.

关键词： Adiabatic groove circular arrangement double-ended symmetrical arrangement thermopile temperature gradient

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Frequency dependence on polarization switching measurement in ferroelectric capacitors

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Journal of Semiconductors 2022年第1期43卷 90-94页

作者： Zhaomeng Gao Shuxian Lyu Hangbing Lyu Key Laboratory of Microelectronics Device&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

Ferroelectric hysteresis loop measurement under high driving frequency generally faces great *** factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous rem-nant polarization(P_(r))and coercive field(E_(c)).In this study,positive-up-negative-down(PUND)measurement under a wide fre-quency range was performed on a 10-nm thick Hf_(0.5)Zr_(0.5)O_(2) ferroelectric *** analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE *** considering the time lag caused by RC delay,reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over *** such a method,rational P-V loops measured at high frequencies(>1 MHz)was successfully *** work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

关键词： PUND measurement HfO_(2)-based ferroelectric RC delay

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