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Enhancing the Avalanche Ionization Integral to 0.24 in GaN Schottky Barrier Diodes Utilizing a Self-Aligned Anode Structure

Enhancing the Avalanche Ionization Integral to 0.24 in GaN S...

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

作者： Jianhua Zhou Lin’An Yang Xuan Huang Xinyi Wang Xiaohua Ma Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China

ISBN: (数字)9798331520717

ISBN: (纸本)9798331520724

we have experimentally investigated gallium nitride (GaN) Schottky barrier diodes including a self-aligned anode structure, exhibiting superior avalanche breakdown capability. The results reveal that the self-aligned anode structure significantly elevates the breakdown voltage from 38.5 V of the conventional structure to 69 V. Meanwhile, the peak electric field at the anode/GaN interface is improved to $2.60 \mathrm{MV} / \mathrm{cm}$, approaching the ideal value of $3.37 \mathrm{MV} / \mathrm{cm}$, with a corresponding avalanche ionization integral of 0.24, which has greater potential to realize impact ionization avalanche transit-time (IMPATT) diodes oscillation.

关键词： Radio frequency Schottky diodes Electric potential Schottky barriers Microwave oscillators Anodes Gallium nitride Electric fields Optimization Passivation

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A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifier

A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifie...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Guanghai Yao Huanhuan Jia Ziyue Zhao Yang Lu Chupeng Yi Xin Liu Ting Feng Lin-an Yang Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This work uses $0.25-\mu \mathrm{m}$ GaAs pHEMT technology to design a 11.7-17.6 GHz broadband high-efficiency monolithic microwave integrated circuit (MMIC) amplifier. An equivalent impedance model matching technology is used to improve the bandwidth of the power amplifiers (PAs). Compared with the traditional single impedance point matching method, our design can obtain a more accurate impedance transformation trajectory, thereby ensuring broadband matching. The simulation results show that when the drain voltage is 5 V, the power-added efficiency (PAE) of the amplifier in the 11.7-17.6 GHz is greater than 34.6%, the peak P AE reaches 38.8%, and the output power (Pout) is greater than 31 dBm (1.3 W), while providing a gain greater than 20 dB. The designed P A stands out with its wide bandwidth and high P AE.

关键词： Broadband amplifiers Gallium arsenide PHEMTs Power amplifiers Microwave circuits Microwave amplifiers Impedance

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A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Amplifier

A 3.3-3.7 GHz High-Linearity and Large-Backoff Doherty Ampli...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zexiang Li Chupeng Yi Yang Lu Ziyue Zhao Xin Liu Ting Feng Xiaohua Ma State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

An asymmetric Doherty power amplifier with saturated output power greater than 35 dBm, amplitude-to-phase distortion (AM-PM) less than 5 and power back-off of 9 dB is designed based on the 0.25-μm GaN process. To enhance the gain, a cascaded driver stage is employed before the Doherty power amplifier. Introducing mismatches between the driver stages and AM-PM compensation between the driver stage and the Doherty power amplifier stabilizes linearity. Simulation results show that at 3.3-3.7 GHz, the overall saturated output power exceeds 35 dBm, power gain exceeds 28 dB, and power-added efficiency (PAE) exceeds 38%. Meanwhile, at 9 dB back-off from saturated output power, PAE reaches 29%-32%, AM-PM distortion is less than 5, and the layout size is 3.3 mm*2 mm.

关键词： Microwave technology Microwave integrated circuits Simulation Layout Millimeter wave technology Power amplifiers Linearity

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Methods to improve the PCM yield of 12µm vanadium oxide uncooled infrared detector mass production process on 200mm Wafers 10

Methods to improve the PCM yield of 12µm vanadium oxide unc...

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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： Ning, Ning Zhou, HongXi Zhang, QiYu Gong, XiHuai Cai, ShengDong Si, Jing Peng, Pan Peng, LuLu Pan, BoJin Jiang, YaDong School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China United Microelectronics Center Co. Ltd. Chongqing401332 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

To address the technological challenges associated with mass production of 12 µm vanadium oxide (VOx) uncooled infrared detectors on the 200 mm fabrication platform, research efforts were focused on enhancing the electrical Process Control Monitoring (PCM) yield of the platform. The Titanium-enhanced Anchor process and low-stress silicon nitride films were applied to resolve issues such as poor connectivity of pixel contact chains, stress mismatch between low-temperature silicon nitride films and detector structures, and insufficient sidewall coverage. This approach resulted in a significant reduction in the failure rate of the detector's pixel via chain structure, effectively addressing issues such as pixel structure collapse due to stress mismatch and premature PI release caused by inadequate sidewall coverage. The PCM yield associated with the detector process improved to over 95%, thereby meeting the mass production requirements for the detector product. © 2025 SPIE.

关键词： Silicon nitride

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ZnSe/NiO heterostructure-based chemiresistive-type sensors for low-concentration NO_(2) detection

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Rare Metals 2021年第6期40卷 1632-1641页

作者： Wei Liu Ding Gu Jian-Wei Zhang Xiao-Gan Li Marina N.Rumyantseva Alexander M.Gaskov School of Microelectronics Key Laboratory of Liaoning for Integrated Circuits TechnologyDalian University of TechnologyDalian 116024China Liaoning Key Laboratory of Integrated Circuit and Biomedical Electronic System Faculty of Electronic Information and Electrical EngineeringDalian University of TechnologyDalian 116024China Laboratory of Chemistry and Physics of Semiconductor and Sensor Materials Chemistry DepartmentMoscow State UniversityMoscow 199991Russia

Novel ZnSe/NiO heterostructure nanocomposites were successfully prepared by one-step hydrothermal *** ZnSe/NiO-based sensor exhibits a response of~96.47% to 8×10^(-6) NO_(2) at 140℃,which is significantly higher than those of intrinsic ZnSe-based(no response)and NiO-based(~19.65%)*** theoretical detection limit(LOD)of the sensor is calculated to be 8.91×10^(-9),indicating that the sensor can be applied to detect the ultralow concentrations of NO_(2).The effect of NiO content on the gas-sensing performance of the nanocomposites was investigated in *** optimal NiO content in the nanocomposite is determined to be15.16%to achieve the highest *** as-fabricated sensor also presents an excellent selectivity to several possible interferents such as methanol,ethanol,acetone,benzene,ammonia and *** enhanced sensing performance can be attributed to the formation of p-p heterostructures between ZnSe and NiO,which induces the charge transfer across the interfaces and yields more active sites.

关键词： ZnSe/NiO heterostructure NO_(2)detection Gas sensors Charge transfer

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Ring-VCO-based phase-locked loops for clock generation–design considerations and state-of-the-art

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Chip 2023年第2期2卷 34-43页

作者： Shiheng Yang Jun Yin Yueduo Liu Zihao Zhu Rongxin Bao Jiahui Lin Haoran Li Qiang Li Pui-In Mak Rui P.Martins School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China(UESTC)Chengdu 610054China State-Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics and the Faculty of Science and TechnologyDepartment of ECEUniversity of MacaoMacao 999078China On leave from Instituto Superior Técnico Universidade de LisboaLisbon 999022Portugal

This article overviews the design considerations and state-of-the-art of the ring voltage-controlled oscillator(VCO)-based phase-locked loops(PLLs)for clock generation in different ***-ularly,the objective of the current work is to evaluate the required PLL performance among the fundamental metrics of power,jitter and *** in-depth treatment of the mainstream PLL architectures and the associated design techniques enables them to be compared analyt-ically and benchmarked with respect to their figure-of-merit(FoM).The paper also summarizes the key concerns on the selection of dif-ferent circuit techniques to optimize the clock performance under dif-ferent scenarios.

关键词： Clock generation IC design Phase-locked loop(PLL) Frequency synthesizer

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A Novel Double-Zener Process and Multiplex Design for High-Power Surge and High-Speed ESD devices Development 17

A Novel Double-Zener Process and Multiplex Design for High-P...

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17th IEEE International Conference on Solid-state and integrated Circuit technology, ICSICT 2024

作者： Qi, Zhao Jia, YiRui Chen, Hongquan Qiao, Ming Li, Zhaoji Zhang, Bo Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Shenzhen Institute for Advanced Study UESTC Shenzhen China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan China

ISBN: (纸本)9798350361834

In this work, a novel Double-zener process (DZP) for Transient Voltage Suppressor (TVS) was developed in 0.5 μm Bipolar CMOS DMOS (BCD) process for the design of Electrical Overstress (EOS) and Electrostatic Discharge (ESD) protection devices. The DZP is designed by adding two P-zener implantation (EP1 and EP2) with different energy. Moreover, multiplex units are designed for various applications, including a dual-directional (DD) low-capacitance silicon-controlled rectifier (DD-LCSCR), a dual-directional NPN (DD-NPN) clamp, and a high-power lightning protection array (LPA). The DD-LCSCR fabricated by EP2 step achieves a capacitance (C) of 0.5 pF and a surge peak current (I PP) of 7 A. The DD-NPN clamp using an EP1 step to decrease the breakdown voltage (BV), achieving a holding voltage (V h ) of 5.5 V, a clamping voltage (V_CL) of 14 V@50 A, and an ESD level of ±30 kV. Using the EP1 step and stacking technology, the 6-stacked LPA shows the excellent power density and VCL which is competitive with vertical TVS products. © 2024 IEEE.

关键词： Electrostatic devices

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Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China Beijing Hua Tan Yuan Xin Electronics Technology Co. Ltd.Beijing 101399China Institute of Carbon-based Thin Film Electronics Peking UniversityShanxi 030012China Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 *** of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

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Large Anomalous Unidirectional Magnetoresistance in a Single Ferromagnetic Layer

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Physical Review Applied 2022年第6期17卷 064052-064052页

作者： Kaihua Lou Qianwen Zhao Baiqing Jiang Chong Bi The Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China

Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effect (SHE) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions. However, the UMR signal is very weak and usually requires a lock-in amplifier for detection, even in a bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here, we report a type of UMR, termed the anomalous UMR (AUMR), in a single Co−Fe−B layer without any adjacent SHE layers, where the UMR signal is about 10 times larger than that in Ta/Co−Fe−B structures and can be detected by using conventional dc multimeters in the absence of lock-in amplifiers. We further demonstrate that the extracted AUMR, by excluding thermal contributions, shows reversal signs for the Co−Fe−B and Ni−Fe single layers with opposite SHAs, indicating that the AUMR may originate from the self-generated spin accumulation interacting with magnetization through the giant-magnetoresistance-like mechanism. These results suggest that the AUMR contributes UMR signals larger than the interfacial spin Hall UMR in the Co−Fe−B-based systems, providing a convenient and reliable approach to detect in-plane magnetization for two-terminal spintronic devices.

关键词： Giant magnetoresistance Spin Hall effect Spin Hall magnetoresistance Spin accumulation Spin-orbit torque Ferromagnets Magnetic multilayers Transition metal alloys

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X-ray irradiation-induced degradation in Hf_(0.5)Zr_(0.5)O_(2) fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

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Rare Metals 2021年第11期40卷 3299-3307页

作者： Yu-Dong Li Qing-Zhu Zhang Fan-Yu Liu Zhao-Hao Zhang Feng-Yuan Zhang Hong-Bin Zhao Bo Li Jiang Yan Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.LtdBeijing 100088China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Information Science and Technology North China University of TechnologyBeijing 100144China

The n-type ultrathin fully depleted silicon-on-insulator(FDSOI) metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf_(0.5)Zr_(0.5)O_(2) high dielectric permittivity(high-k) dielectric as gate insulator,were *** total ionizing dose effects were investigated,and an X-ray radiation dose up to 1500 krad(Si) was applied for both long-and short-channel *** short-channel devices(0.025-0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices(0.35-16 μm),leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold *** was experimentally demonstrated that the OFF mode is the worst case among the three working conditions(OFF,ON and A110) for short-channel ***,the determined effective electron mobility was enhanced by 38% after X-ray irradiation,attributed to the different compensations for charges triggered by radiation between the highk dielectric and buried *** extracting the carrier mobility,gate length modulation,and source/drain(S/D)parasitic resistance,the degradation mechanism on X-ray irradiation was ***,the split capacitance-voltage measurements were used to validate the analysis.

关键词： Total ionizing dose Fully depleted silicon-on-insulator(FDSOI) Metal–oxide–semiconductor field-effect transistor(MOSFET) High-k Hf_(0.5)Zr_(0.5)O_(2)

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