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High thermoelectric performance at room temperature of n-type Mg_(3)Bi_(2)-based materials by Se doping

Journal of Magnesium and Alloys 2022年第4期10卷 1024-1032页

作者： Xiaobo Mo Jiansong Liao Guocai Yuan Sha Zhu Xiaobo Lei Lihong Huang Qinyong Zhang Chao Wang Zhifeng Ren Key Laboratory of Fluid and Power Machinery of Ministry of Education School of Materials Science&EngineeringXihua UniversityChengdu 610039China Clean Energy Materials and Engineering Center State Key Laboratory of Electronic Thin Film and Integrated DeviceSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China Department of Physics and TcSUH University of HoustonHoustonTX 77204United States

Bi_(2)Te_(3) based alloys have been the most widely used thermoelectric material at low temperature for many *** we report Se doped n-type Mg_(3)Bi_(2) based materials with a thermoelectric figure-of-merit ZT of 0.82 at 300 K and a peak ZT of 1.24 at 498 K,which is comparable to the n-type Bi_(2)Te_(3) and Te doped Mg_(3)Bi_(1.4)Sb_(0.6).The improved thermoelectric performance is benefited from the high carrier concentration and mobility as well as the thermal conductivity *** reduced resistivity increased the power factor at all measured temperatures,leading to a higher engineering ZT(ZTeng)and engineering power factor(PFeng)for n-type Mg_(3)Bi_(2).The n-type Mg_(3)Bi_(1.4)Sb_(0.6) materials are promising for thermoelectric power generation and cooling applications near room temperature.

关键词： Mg_(3)Bi_(2) Zintl compound Thermoelectric Se-doping

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Waveguide-integrated Thin-Film Lithium Niobate-Two-Dimensional Material Photodetectors

Waveguide-Integrated Thin-Film Lithium Niobate-Two-Dimension...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Zhu, Sha Zhang, Yiwen Ren, Yi Wang, Yongji Zhai, Kunpeng Feng, Hanke Zhu, Ning Hua Pun, Edwin Yue-Bun Wang, Cheng College of Microelectronics Faculty of Information Technology Beijing University of Technology Beijing China Department of Electrical Engineering State Key Laboratory of Terahertz and Millimeter Waves City University of HongKong Kowloon Hong Kong Department of Chemistry City University of Hong Kong Hong Kong State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

We report a waveguide-integrated lithium niobite on insulator (LNOI) two-dimensional material platform, demonstrating large bandwidth above 40 GHz LNOI-graphene PDs and ultrahigh responsivity of 7 A/W LNOI-Te PDs, to ... 详细信息

ISBN: (纸本)9781957171258

关键词： Lithium

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Energy-Efficient fall detection based on Spiking Neural Networks

Energy-Efficient fall detection based on Spiking Neural Netw...

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2023 International Conference on Cyber Security, Artificial Intelligence, and Digital Economy, CSAIDE 2023

作者： Xiao, Xiao Liwei, Meng Yian, Liu Shaogang, Hu Guanchao, Qiao School of Software Engineering Chongqing University of Posts and Telecommunications Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9781510666597

Falls have become an essential factor affecting life safety in recent years. Given the high energy consumption associated with running models over extended periods in practical engineering, this research presents a network architecture, Spiking-Rep-YOLOv3, which is more suitable for transformation into Spiking neural networks (SNNs). We redesign the RepVGG-based backbone network by improving the YOLOv3-tiny network. Second, we speed up inference by employing neuron normalization to reduce information loss during inference after neural network transformation. We experimented with Spiking-Rep-YOLOv3 on the E-FPDS public dataset and showed that the network achieved similar accuracy as YOLOv3-tiny and only 40.7% of the energy consumption of the latter. © 2023 SPIE.

关键词： Neural networks

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Arrhythmia classification method based on knowledge distillation and 2D ECG images 3

Arrhythmia classification method based on knowledge distilla...

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3rd International Conference on Neural Networks, Information and Communication Engineering, NNICE 2023

作者： Li, Renwei Meng, Liwei Liu, Yian Hu, Shaogang Qiao, Guanchao School of Software Engineering Chongqing University of Posts and Telecommunications Chongqing China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9798350335972

Arrhythmia classification is crucial for identifying and preventing the potential risks associated with cardiovascular diseases. Currently., using deep learning for arrhythmia classification faces challenges of model complexity and deployment difficulty. To address this., We present a novel approach for classifying arrhythmias using knowledge distillation and 2D ECG images. In this study., the classification of the MIT-BIH dataset is performed according to AAMI criteria. Preprocessing., such as denoising., interception., and 2D grayscale image conversion., is first performed. Then., high-performance 2D-CNN models are pre-trained using 2D ECG images as the teacher model., and a lightweight 1D-CNN is constructed as the student model. Finally., we align raw and 2D ECG data., utilizing knowledge distillation to allow the student model to learn from the teacher model during the training process., thus enabling model compression. The final results show that the method significantly improves the performance of the student model in arrhythmia classification. For overall performance., when using Vgg16 as the teacher model., Acc and P+ improve by 1.62% and 6.64%., and Se is comparable. In addition., the F1-score values have been improved in all categories. The proposed method provides a feasible approach for low computational power device deployment for arrhythmia classification. © 2023 IEEE.

关键词： Electrocardiograms

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Siamese Network Object Tracking Based on Fusion of Visible and Event Cameras

Siamese Network Object Tracking Based on Fusion of Visible a...

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2023 International Conference on Cyber Security, Artificial Intelligence, and Digital Economy, CSAIDE 2023

作者： Hu, Qiang Meng, Liwei Liu, Yian Hu, Shaogang Qiao, Guanchao School of Software Engineering Chongqing University of Posts and Telecommunications Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China

ISBN: (纸本)9781510666597

Object tracking is widely used in daily life. The existing visible camera-based tracking methods are difficult to track objects accurately in the face of degraded scenes such as fast movement, high contrast, and low illumination, which will cause the loss of tracking performance. An event camera is a biologically driven sensor with higher dynamic range, smaller time delay, and higher light sensitivity than traditional visible cameras. We propose a siamese network object tracking method that fuses visible and event cameras to realize more reliable tracking. We design a feature fusion method combining visible and event camera features based on attention mechanism. It realizes the cooperation of both sensors and improves the accuracy of tracking. Experiments on the VisEvent dataset reveal that our network outperforms single-modality trackers by 5.8% and outperforms other fusion-based methods by 2.1%. © 2023 SPIE.

关键词： Cameras

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Enhanced memory capacity of a neuromorphic reservoir computing system based on a VCSEL with double optical feedbacks

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Science China(Information Sciences) 2020年第6期63卷 164-175页

作者： Xingxing GUO Shuiying XIANG Yahui ZHANG Aijun WEN Yue HAO State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xidian University

In this paper, a neuromorphic reservoir computing(RC) system with enhanced memory capacity(MC) based on a vertical-cavity surface-emitting laser(VCSEL) subject to double optical feedbacks(DOF)is proposed and investigated numerically. The aim of this study is to explore the MC of the proposed *** the purpose of comparison, the MC of the VCSEL-based RC system with single optical feedback(SOF)is also taken into account. It is found that, compared with the VCSEL-based RC system subject to SOF,enhanced MC can be obtained for the VCSEL-based RC system with DOF. Besides, the effects of feedback strength, injected strength, frequency detuning as well as injection current on the MC of the VCSEL-based RC system with DOF are considered. Moreover, the influence of feedback delays is also carefully ***, such proposed VCSEL-based RC system with DOF provides a prospect for the further development of the neuromorphic photonic system based on RC.

关键词： vertical-cavity surface-emitting laser nanophotonic reservoir computing memory capacity double feedback information processing

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High quality 6-inch single-crystalline AlN template for E-mode HEMT power device

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Journal of Semiconductors 2025年第3期46卷 96-101页

作者： Zhiwen Liang Shangfeng Liu Ye Yuan Tongxin Lu Xiaopeng Li Zirong Wang Neng Zhang Tai Li Xiangdong Li Qi Wang Shengqiang Zhou Kai Kang Jincheng Zhang Yue Hao Xinqiang Wang Songshan Lake Materials Laboratory Dongguan 523808China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian UniversityGuangzhou 510555China School of Physical Sciences Great Bay UniversityDongguan 523808China Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials ResearchBautzner Landstrasse 40001328DresdenGermany Dongguan Institute of Opto-Electronics Peking University Dongguan 523808China Sinopatt.Technology Co. LtdSongshan LakeDongguan 523808China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsNan-oOptoelectronics Frontier Center of Ministry of Education(NFC-MOE)Peking UniversityBeijing 100871China State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China

In the present work,the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique,which opens up the path towards industrial application in power ***,the outstanding crystalline-quality is confirmed by Rutherford backscattering spectrometry(RBS).In accompanied with the results from X-ray diffraction,the RBS results along both[0001]and[1213]reveal that the in-plane lattice is effectively reordered by high temperature *** addition,the constantΦ_(epi)angle between[0001]and[1213]at different depths of 31.54°confirms the uniform compressive strain inside the AlN *** from the excellent crystalline quality of AlN template,we can epitaxially grow the enhanced-mode high electron mobility transistor(HEMT)with a graded AlGaN buffer as thin as only~300 *** an ultra-thin AlGaN buffer layer results in the wafer-bow as low as 18.1μm in 6-inch wafer *** fabricated HEMT devices with 16μm-L_(GD)exhibits a threshold voltage(V_(TH))of 1.1 V and a high OFF-state breakdown voltage(V_(BD))over 1400 ***,after 200 V high-voltage OFF-state stress,the current collapse is only 13.6%.Therefore,the advantages of both 6-inch size and excellent crystallinity announces the superiority of single-crystalline AlN template in low-cost electrical power applications.

关键词： single-crystalline allium nitride template E-mode HEMT

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Real-time optical spike-timing dependent plasticity in a single VCSEL with dual-polarized pulsed optical injection

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Science China(Information Sciences) 2020年第6期63卷 143-154页

作者： Shuiying XIANG Yanan HAN Xingxing GUO Aijun WEN Genquan HAN Yue HAO State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian University

We propose and numerically realize an optical spike-timing dependent plasticity(STDP) scheme by using a single vertical-cavity surface-emitting laser(VCSEL). In the scheme, the VCSEL is subjected to an orthogonally-polarized continuous-wave optical injection(OPCWOI) and dual-polarized pulsed optical injections(DPPOI). Based on the widely used spin-flip model, the response spiking dynamics of VCSEL is numerically studied, and then the optical STDP in a single VCSEL is explored. The roles of bias current, the strength of OPCWOI and DPPOI, and the frequency detuning on the optical STDP curve are numerically analyzed. It is found that, by simultaneously utilizing the response spiking dynamics in two orthogonal polarization modes, an optical STDP could be achieved by using a single VCSEL. Furthermore, the weight update of STDP curve can be calculated in real-time. Additionally, the STDP curves can also be controlled by adjusting some controllable parameters. The real-time optical STDP based on a single VCSEL is numerically realized for the first time, which paves the way towards fully VCSELs-based photonic neuromorphic systems with low power consumption.

关键词： vertical-cavity surface-emitting laser optical spike-timing dependent plasticity neuromorphic photonic system dual polarized pulsed optical injections artificial intelligent systems

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Design of broadband and low-profile polarization artificial structure for the application of low scattering control 15

Design of broadband and low-profile polarization artificial ...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Li, Fengxia Chen, Haiyan Deng, Jing-Ya Xidian University School of Physics Xi'an710071 China University of Electronic Science and Technology of China National Engineering Research Center of Electromagnetic Radiation Control Materials Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education State Key Laboratory of Electronic Thin Film and Integrated Device Chengdu610054 China

ISBN: (纸本)9798350338874

here, we proposed a broadband and low-profile polarization artificial structure which based on SRR resonant rings, this structure also has the property of high-efficiency and wide-angle. The polarization conversion ratio is over 90% from 8.6 GHz to 23.9 GHz. The low-scattering metasurface for radar cross section (RCS) reduction is designed by arranging the polarization conversion unit and its mirror unit as the checkerboard type according to the phase cancellation principle. The relative bandwidth of 10dB RCS reduction is up to 93%, and the maximum reduction value reaches to 43.7dB. Such a low-scattering metasurface scheme has applications in scattering control, stealth, and security. © 2023 IEEE.

关键词： Polarization

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Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engineered Substrate with Dummy-Grade Material Reuse

Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engi...

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2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Wang, Xinhua Xing, Xiangjie Yang, Xiaolei Yang, Xin Chen, Yan Ma, Guoliang Wang, Bixuan Zhao, Zhifei Yuan, Chao Bai, Yun Huang, Sen Lei, Yipei Shi, Jingyuan Liu, Fuchao Zhang, Yuhao Mu, Fenwen Liu, Xinyu Liu, Sheng Hao, Yue HF&HV Device and Integrate Center Institute of Microelectronics Chinese Academy of Science Beijing China State Key Laboratory of WBS Devices and Integrated Technology Nanjing Electronic Devices Institute Nanjing China Center for Power Electronics Systems Virginia Tech BlacksburgVA United States Institute of Technological Sciences Wuhan University Wuhan China TJ Innovative Semiconductor Substrate Technology Co. Ltd Tianjing China Xidian University Xi’an China

ISBN: (纸本)9798350365429

The SiC substrate cost accounts for >50% of final device cost, and its manufacturing suffers from a high carbon footprint. To address this challenge, this work demonstrates a novel 150 mm single-crystal SiC engineered substrate, which homogeneously integrates a prime-grade SiC layer onto a dummy-grade SiC substrate by surface-active bonding. This engineered substrate reuses low-grade SiC substrates, which are often disposed as wastes in the MOSFET industrial production, as well as recycling the high-grade wafer for over 30 times. It thus can enable a drastic reduction in the substrate cost (by ~40%) and the associated carbon footprint. The engineered substrate demonstrates a defect density as low as prime-grade substrate, a low thermal boundary resistance (TBR) of 2.8 m2K/GW, as well as very small electric field at the bonded interface. The TBR is among the lowest reported for the SiC interfaces bonded with SiC, GaN, and Ga2O3. The 150 mm, 1200 V-class SiC epi grown on this substrate achieved a high killer-defect-free yield of 99.2%. The 1200 V, 20 mΩ SiC MOSFETs fabricated on this 150 mm epi demonstrate a yield over 70% (for IDSS250 A, 10 ms surge current. To the best of our knowledge, this is the first report of the wafer-level device data and high-current robustness for a SiC engineering substrate. These results show the great potential of this new substrate technology to enable more economical and sustainable SiC power electronics. © 2024 IEEE.

关键词： MOSFET devices

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