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A Rapid Adaptation Approach for Dynamic Air‑Writing Recognition Using Wearable Wristbands with Self‑Supervised Contrastive Learning

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Nano-Micro Letters 2025年第2期17卷 417-431页

作者： Yunjian Guo Kunpeng Li Wei Yue Nam‑Young Kim Yang Li Guozhen Shen Jong‑Chul Lee Department of Electronic Convergence Engineering Kwangwoon UniversitySeoul 01897South Korea Radio Frequency Integrated Circuit(RFIC)Bio Centre Kwangwoon UniversitySeoul 01897South Korea Department of Electronic Engineering Kwangwoon UniversitySeoul 01897South Korea School of Microelectronics Shandong UniversityJinan 250101People’s Republic of China State Key Laboratory of Integrated Chips and Systems Fudan UniversityShanghai 200433People’s Republic of China School of Integrated Circuits and Electronics Beijing Institute of TechnologyBeijing 100081People’s Republic of China

Wearable wristband systems leverage deep learning to revolutionize hand gesture recognition in daily *** existing approaches that often focus on static gestures and require extensive labeled data,the proposed wearable wristband with selfsupervised contrastive learning excels at dynamic motion tracking and adapts rapidly across multiple *** features a four-channel sensing array composed of an ionic hydrogel with hierarchical microcone structures and ultrathin flexible electrodes,resulting in high-sensitivity capacitance *** wireless transmission from a Wi-Fi module,the proposed algorithm learns latent features from the unlabeled signals of random wrist ***,only few-shot labeled data are sufficient for fine-tuning the model,enabling rapid adaptation to various *** system achieves a high accuracy of 94.9%in different scenarios,including the prediction of eight-direction commands,and air-writing of all numbers and *** proposed method facilitates smooth transitions between multiple tasks without the need for modifying the structure or undergoing extensive task-specific *** utility has been further extended to enhance human–machine interaction over digital platforms,such as game controls,calculators,and three-language login systems,offering users a natural and intuitive way of communication.

关键词： Wearable wristband Self-supervised contrastive learning Dynamic gesture Air-writing Human-machine interaction

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Maximizing hydrogen evolution via Co-Ni dual atoms and nanoclusters on hierarchically ordered porous carbon framework

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Science China Materials 2024年第10期67卷 3197-3205页

作者： Qian Li Pan Zhang Huaiguang Li Yuan Wang Dongsheng Tang Qun Li Jiabin Wu Synergetic Innovation Center for Quantum Effects and Application Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of EducationCollege of Physics and Information ScienceHunan Normal UniversityChangsha 410081China National Key Laboratory of Advanced Micro and Nano Manufacture Technology School of Integrated CircuitsPeking UniversityBeijing 100871China The Chinese University of Hong Kong ShenzhenShenzhen 518172China CAS Key Laboratory of Nanosystem and Hierarchical Fabrication&CAS Center for Excellence in Nanoscience National Center for Nanoscience and TechnologyBeijing 100190China Department of Chemistry Tsinghua UniversityBeijing 100084China Insititute of Microelectronics State Key Laboratory of Analog and Mixed-Signal VLSIUniversity of MacaoMacao 519000China

Efficient hydrogen production through water splitting relies on the development of high-performance catalysts for the hydrogen evolution reaction(HER).In this study,we synthesized the CoNi SAs@NPs-NC catalyst using multi-metal single-crystal ordered macroporous metal-organic frameworks(MOFs)as *** catalyst features a hierarchical porous structure with ordered macropores and micropores,which not only provides a high specific surface area but also promotes efficient mass ***,the incorporation of bimetallic components,coupled with synergistic interactions between single atoms(SAs)and nanoparticles(NPs),significantly enhances its catalytic *** CoNi SAs@NPs-NC nanocatalysts demonstrated exceptional activity in the HER,recording overpotentials of 90 mV in 1 M KOH and 61 mV in 0.5 M H_(2)SO_(4),both at a current density of 10 mA cm^(−2).In addition,density functional theory(DFT)analysis was employed to investigate the synergistic interactions among CoNi NPs,SAs,and nitrogen *** finding highlights the promising potential of the CoNi SAs@NPs-NC catalyst for efficient hydrogen evolution,making it a valuable candidate for advancing the field of water splitting.

关键词： three dimensional ordered macroporous Co-Ni dual atoms Co-Ni nanoclusters HER synergistic effect

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650V Planar Anode Gate Super-junction IGBT with Superior Von-EoffTrade-off 16

650V Planar Anode Gate Super-junction IGBT with Superior Von...

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16th IEEE International Conference on Solid-state and integrated Circuit technology, ICSICT 2022

作者： Li, Luping Li, Zehong Chen, Peng Rao, Qiansheng Yang, Yuanzhen Wan, Jiali Wang, Tongyang Zhao, Yishang Ren, Min University of Electronic Science and Technology of China The State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China University of Electronic Science and Technology of China Chongqing Institute of Microelectronics Industry Technology Chongqing401331 China University of Electronic Science and Technology of China School of Aeronautics and Astronautics Chengdu611731 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

The super-junction IGBT (SJ-IGBT), due to its inherent structural advantages, has the potential for low loss and high frequency applications. To further take the advantage of it, a 650V floating P-pillar SJ-IGBT integrated with a planar anode gate is proposed in this paper, thus a low turn-off loss SJ-IGBT with better Von-Eoff trade-off is obtained. Owing to the introduction of anode gate, electrons in the pillar region can be extracted in advance, thereby the turn-off time and loss both are substantially reduced. Compared with trench backside gates, the planar gate has similar effects and better convenience in process implementation. The TCAD simulation results show that the turn-off delay time and the voltage raise time reduce by 61% and 86%, respectively, and the turn-off loss reduces by 44%. © 2022 IEEE.

关键词： Insulated gate bipolar transistors (IGBT)

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Spin swapping for an exchange magnon spin current

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Physical Review B 2023年第18期108卷 L180402-L180402页

作者： Shuting Cui Peng Yan Maokang Shen Wei Luo Xiaofei Yang Yue Zhang School of Integrated Circuit Huazhong University of Science and Technology Wuhan 430074 China School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China School of Microelectronics Hubei University Wuhan 430062 China

We propose the spin-swapping effect for an exchange magnon spin current in a perpendicularly magnetized ferromagnetic medium with in-plane anisotropy on the surface. The excitation of a magnon current flowing along an in-plane direction with an out-of-plane spin polarization leads to the generation of an exchange spin current propagating along the out-of-plane direction, characterized by an in-plane spin polarization. The resulting exchange magnon spin current can induce an inverse spin Hall voltage of microvolts. The exchange coupling at the interface between regions with different magnetic anisotropies plays a crucial role in generating the spin-swapping effect. This is in contrast to the recently reported spin swapping for an exchange spin current in a canted antiferromagnet due to the Dzyaloshiskii-Moriya interaction.

关键词： Magnons Spin current Spintronics Transport phenomena Ferromagnets Micromagnetic modeling

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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices

A Systematic Characterization Method for Time-resolved Stabi...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yifei Huang Qimeng Jiang Sen Huang Xinyu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Institute of Microelectronics University of Chinese Academy of Sciences Beijing China

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic $R_{\text{ON}}$ behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic $R_{\text{ON}}$ . Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic $R_{\text{ON}}$ , featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible $R_{\text{ON}}$ degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature.

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Retention Characteristic Optimization based on Combined Forming Scheme for Resistive Random Access Memory Chip

IEEE Electron Device Letters

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IEEE Electron device Letters 2025年

作者： Zuo, Qingyun Zheng, Xu Zhao, Yudi Li, Wubo Liu, Yixuan Wu, Qiqiao Lu, Yifei Zhao, Yuhang Zhang, Wenchang Xu, Xiaoxin Min, Hao Liu, Qi Fudan University State Key Laboratory of ASIC and Systems Shanghai201024 China Shanghai Integrated Circuit Research and Development Center Co. Ltd Shanghai201210 China Institute of Microelectronics of Chinese Academy of Sciences State Key Lab of Fabrication Technologies for Integrated Circuits China Beijing Information Science & Technology University Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument Beijing100101 China Fudan University School of Microelectronics China

The long-time retention issue of resistive random access memory (RRAM) presents a significant challenge in maintaining the performance of large-scale RRAM-based computation-in-memory (CIM) systems. To address the long-term inference accuracy degradation caused by RRAM instability, we proposed a combined forming strategy, which can effectively suppress resistance drift and improve inference accuracy without periodic updates of RRAM cells. With this optimized strategy, the probability of high resistance state (HRS) drift was reduced to 5%, and the inference accuracy could be maintained at 88% even after 105s at 125°C. This work provided a valuable strategy for enhancing devices retention and sustaining accuracy in RRAM-based CIM systems. © 1980-2012 IEEE.

关键词： RRAM

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Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

SSRN

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SSRN 2023年

作者： Deng, Kexin Huang, Sen Wang, Xinhua Jiang, Qimeng Yin, Haibo Fan, Jie Jing, Guanjun Wei, Ke Zheng, Yingkui Shi, Jingyuan Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Bulk trapping and its effects on threshold voltage hysteresis (ΔVTH) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) are researched through isothermal capture transient spectroscopy. A post deposition annealing (PDA) at 500 ℃ in the O2 ambient is confirmed to be an effective way to reduce the bulk traps in the atomic layer deposited (ALD)-Al2O3 film as it contributes to the suppressed ΔVTH in Al2O3/AlGaN/GaN MOS-HEMTs. Isothermal-mode capacitance deep level transient spectroscopy (C-DLTS) is utilized to investigate the threshold voltage instability in Al2O3/AlGaN/GaN MOS-HEMTs. The evolution of the C-DLTS signals verifies the continual charging of oxide bulk traps in the Al2O3 gate dielectric once the gate bias of the MOS-HEMTs is applied exceeding +3 V, which leads to the degraded ΔVTH as well as subthreshold slopes in transfer characterization. Such traps probably stem from the Al-O-H component in as-deposited Al2O3 layers, as detected by X-ray photoelectron spectroscopy (XPS) analysis. Energy band simulation further illustrates the capture process of the oxide bulk traps, verifying the physical relationship between bulk-trapping and ΔVTH. © 2023, The Authors. All rights reserved.

关键词： Gallium nitride

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A Two-Phase Hybrid Switched Capacitors Converter with Interleaving Control Scheme for Flying Capacitors Self-Balancing

A Two-Phase Hybrid Switched Capacitors Converter with Interl...

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Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： Weidong Xue Yiseng Zhang Yang Lu Jian Fang Junyan Ren School of Microelectronics Fudan University Shanghai China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Omnivision Technology Phoenix USA

This paper presents a dual-path power stage with an interleaving control scheme in a two-phase hybrid switched capacitor converter. In a conventional three-level converter, the flying capacitor voltage is not self-balanced and thus extra calibration is required to overcome parameter and timing mismatches, parasitic capacitors, etc. The proposed converter obtains a self-balanced flying capacitor voltage with an interleaving control scheme. And then, the non-ideal effects are also calibrated without an additional cost. In addition, there are two series power switches in the discharge path in the three-level converter. But in the proposed power stage, there is only one power switch. Therefore, the conduction loss is reduced dramatically in each de-energizing phase. The converter is implemented with a conversion from 12.0 V to 1.0 V at a 1-MHz switching frequency, based on a $0.15-\mu\mathrm{m}$ highvoltage BCD process. The simulation shows that the flying capacitor voltages are self-balanced within only one switching cycle. The peak efficiency of 89.8% is achieved by this converter under a 3-A current load.

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Direct Cu-polyimide Bonding Achieved by Surface Activation and Pt-catalyzed Formic Acid Atmosphere

Direct Cu-polyimide Bonding Achieved by Surface Activation a...

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2021 IEEE International Conference on integrated Circuits, Technologies and Applications, ICTA 2021

作者： Meng, Ying Gao, Runhua Wang, Xinhua Chen, Xiaojuan Huang, Sen Wei, Ke Wang, Dahai Mu, Fengwen Liu, Xinyu Chinese Academy of Sciences High-Frequency High-Voltage Device and Integrated Circuits RD Center Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781665417471

Recent flexible printed circuit applications of high-frequency wireless communication systems require thicker metal layers on substrates for lower ohmic losses. In this paper, a Cu layer over 50-micron thick was directly generated on the polyimide substrate by heterogeneous bonding method without interlayer. The polyimide was first sputtered a 200 nm-thick Cu layer, and then was activated by oxygen plasma to improve its hydrophilicity and achieve direct adhesion between polyimide and nanoscale Cu deposition, and eventually was bonded with a 50micron-thick Cu foil in a Pt-catalyzed formic acid atmosphere by thermo-compression. The effectiveness of this method was verified by comparing bonding interfaces, shear strength, and fracture modes of bonded samples with and without a Cr interlayer. This method provides a new idea for the integration of heterogeneous materials needed in wearable products and flexible printed circuits. © 2021 IEEE.

关键词： Formic acid

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Effect of Epitaxial Layer Parameters on the Avalanche Energy of Power VDMOS 5

Effect of Epitaxial Layer Parameters on the Avalanche Energy...

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5th IEEE International Conference on Electronics technology, ICET 2022

作者： Li, Changze Ren, Min Tao, Lin Zhang, Xin Yu, Shiheng Lai, Xinzhang Zhuo, Ningze Zhang, Bo University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Sichuan Chengdu China Wuxi China Resources Huajing Microelectronics Co.LTD Jiangsu Wuxi China Jiangsu Changjing Electronics Technology Co.LTD Jiangsu Nanjing China

ISBN: (纸本)9781665485081

The Unclamped Inductive Switching (UIS) process is often considered to be the most extreme electro-thermal stress condition a vertical double diffused MOSFET (VDMOS) can encounter. Avalanche energy (EAS) is commonly used to characterize the ability of devices to withstand UIS tests and to assess device reliability. It is found that epitaxial layer has an effect on EAS of VDMOS. Simulations and experimental results have shown that lower resistivity and larger drift region thickness can result in a high EAS for nonpunch-through VDMOS with the same breakdown voltage. A transient additional carrier model is proposed to explain the effect of epitaxial layer. Therefore, in addition to taking effective measures to prevent the parasitic NPN transistor from turning on, it is also very important to select the parameters of epitaxial layer properly to improve the UIS capability of VDMOS. © 2022 IEEE.

关键词： Reliability

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