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Distributed implantation of a flexible microelectrode array for neural recording

Microsystems & Nanoengineering 2022年第3期8卷 177-184页

作者： Chunrong Wei Yang Wang Weihua Pei Xinyong Han Longnian Lin Zhiduo Liu Gege Ming Ruru Chen Pingping Wu Xiaowei Yang Li Zheng Yijun Wang State Key Laboratory of Integrated Optoelectronics Institute ofSemiconductorsChinese Academy of Sciences100083 BeijingChina University of Chinese Academy of Sciences 100049 BeijingChina School of Future Technologies University of Chinese Academy of Sciences100049 BeijingChina School of Microelectronics University of Sciences and Technology of China230000 HefeiChina Institute of Automation ChineseAcademy of Sciences100190 BeijingChina Key Laboratory of Brain Functional Genomics East China Normal University200062 ShanghaiChina Brain Machine Fusion Itelligence Institute 215131 SuzhouChina Technical Institute of Physids and Chemistry Chinese Academy of Sciences100190 BeijingChina Chinese Institute for Brain Research 102206 BeijingChina

Flexible multichannel electrode arrays(fMEAs)with multiple flaments can be flexibly implanted in various *** is necessary to develop a method for implanting the fMEA in different locations and at various depths based on the recording *** study proposed a strategy for reducing the microelectrode volume with integrated *** implantation system was developed specifically for semiautomatic distributed *** feasibility and convenience of the fMEA and implantation platform were verified in *** acute and chronic recording results provied the effectiveness of the packaging and implantation *** methods could provide a novel strategy for developing fMEAs with more flaments and recording sites to measure functional interactions across multiple brain regions.

关键词： implantation recording microelectrode

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Wideband Longitudinal Leaky SAW Filter Implementation for Wi-Fi 7

Wideband Longitudinal Leaky SAW Filter Implementation for Wi...

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Microwave Acoustics and Mechanics (IC-MAM),IEEE MTT-S International Conference on

作者： Mijing Sun Xinjian Ke Shibin Zhang Pengcheng Zheng Xiaoli Fang Juxing He Xin Ou School of Microelectronics University of Science and Technology of China Hefei China State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350331462

ISBN: (纸本)9798350331479

In this work, large electromechanical coupling coefficient (K 2 ) surface acoustic wave (SAW) resonators in the range of 5.66 to 6.72 GHz are demonstrated on 6-inch X-cut LiNbO 3 /SiC. Further, three filters are fabricated for full coverage of the Wi-Fi 7 bands (5.925 GHz-7.125 GHz). The longitudinal leaky (LL) modes of excitation as well as their preferred in-plane orientations are analyzed using the finite element method. The LL-SAW filters aiming at Wi-Fi 7 band feature scalable center frequencies $(f_{c})$ from 6.15 to 7.09 GHz, 3-dB bandwidths (BW 3dB ) between 487 MHz and 522 MHz, and insertion losses (IL) between 1.11 dB and 1.43 dB. The demonstrations show the strong potential of the LL-SAW filter based on LiNbO 3 /SiC for the filtering solution of Wi-Fi 7 bands.

关键词： Piezoelectric films Filters Silicon carbide Surface acoustic waves Resonator filters SAW filters Piezoelectricity

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Degradation of SOI SRAMs at 25C Operating Conditions 23

Degradation of SOI SRAMs at 25C Operating Conditions

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23rd IEEE Electronics Packaging technology Conference, EPTC 2021

作者： Wang, K. Gao, J. Zeng, C. Li, B. Zhang, G. Ma, S. Sun, P. Wang, C. Hao, N. Li, J. Liu, H. Zhao, F. Luo, J. Han, Z. Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Silicon Device Technology Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China

ISBN: (纸本)9781665416191

In this paper, a dynamic life evaluation test of 0.35mu {m} PD SOI SRAM is conducted at 250{C} ambient temperatures. Experiments show that the SOI SRAMs can safely operate for more than 600 hours at 250{C}. Analysis of failed devices demonstrates that electro-migration effect and Kirkendall effect may be the direct causes of device degradation. And underlying leakage of the device will greatly accelerate the degradation of the metal interconnect and package, which needs to be improved in future work. © 2021 IEEE.

关键词： Failure analysis

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Spray-coated electret materials with enhanced stability in a harsh environment for an MEMS energy harvesting device

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Microsystems & Nanoengineering 2021年第1期7卷 151-159页

作者： Anxin Luo Yixin Xu Yulong Zhang Mi Zhang Xiaoqing Zhang Yan Lu Fei Wang School of Microelectronics Southern University of Science and Technology518055 ShenzhenChina State Key Laboratory of AMS-VLSI Institute of MicroelectronicsUniversity of Macao(UM)999078 MacaoChina Department of Electrical and Computer Engineering FSTUM999078 MacaoChina Engineering Research Center of Integrated Circuits for Next-Generation Communications Ministry of EducationSouthern University of Science and Technology518055 ShenzhenChina Department of Mechanical Engineering Boston UniversityBostonMAUSA College of New Materials and New Energies Shenzhen Technology University518118 ShenzhenChina Shanghai Key Laboratory of Special Artificial School of Physics Science and Engineering Tongji University200092 ShanghaiChina

The charge stability of electret materials can directly affect the performance of electret-based devices such as electrostatic energy *** this paper,a spray-coating method is developed to deposit an electret layer with enhanced charge *** long-term stability of a spray-coated electret is investigated for 500 days and shows more stable performance than a spin-coated layer.A second-order linear model that includes both the surface charge and space charge is proposed to analyze the charge decay process of electrets in harsh environments at a high temperature(120°C)and high humidity(99%RH);this model provides better accuracy than the traditional deep-trap *** further verify the stability of the spray-coated electret,an electrostatic energy harvester is designed and fabricated with MEMS(micro-electromechanical systems)*** electret material can work as both the bonding interface and electret layer during fabrication.A maximum output power of 11.72μW is harvested from a vibrating source at an acceleration of 28.5 m/*** the energy harvester with the spray-coated electret is exposed to a harsh environment(100°C and 98%RH),an adequate amount of power can still be harvested even after 34 h and 48 h,respectively.

关键词： stability. stability electrostatic

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Stimulated-Brillouin-scattering-based arbitrarily phase coded microwave waveform transmitter with anti-dispersion transmission

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Chinese Optics Letters 2022年第8期20卷 69-74页

作者： Sha Zhu Kunpeng Zhai Wei Li Ning Hua Zhu College of Microelectronics Faculty of Information TechnologyBeijing University of TechnologyBeijing 100124China State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Electronic Electrical and Communication EngineeringCenter of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China

We focus on photonic generation and transmission of microwave signals in this *** on dual-pumped stimulated Brillouin scattering,a single-sideband(SSB)optical signal with high sideband rejection ratio is *** with a phase-modulated optical carrier,an arbitrarily phase coded microwave signal is generated after photoelectric *** SSB modulation can eliminate the fiber-dispersion-induced power dispersion naturally,and the phase modulation of the optical carrier can achieve arbitrary phase encoding and suppress background *** proposed scheme can achieve both generation and anti-dispersion transmission of arbitrarily phase coded signals simultaneously,which is suitable for one-to-multi long-distance radar networking.

关键词： microwave photonics phase coded signal anti-dispersion transmission optical signal processing

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17-40GHz Ultra-Wideband Power Amplifier MMICs

17-40GHz Ultra-Wideband Power Amplifier MMICs

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Li Zhang Xuefeng Zheng Pengbo Du Long Zhao Hanbin Qu State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an China North-China Integrated Circuit Co. Ltd Shijiazhuang China The 13th Research Institute CETC Shijiazhuang China Hebei Satellite Communication Radio Frequency Technology Innovation Center Shijiazhuang China Shijiazhuang Research Center for Radio Frequency Integrated Circuit Engineering Technology China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

In this letter., two 17–40 GHz ultra-wideband power amplifiers (P A) Monolithic Microwave integrated Circuit (MMIC) are proposed using GaN-SiC technology. The first is a single-way three-stage P A., and the second one adds Lange- couplers as a balanced typology to improve the input/output return loss. On wafer measurement results show that the single-wayc> P A displays a minimum small signal gain S21 of 24 dB., power-added efficiency (PAE) of 21 %-31 %., and the saturated output power (Psat) of 31 $\text{dBm}(1.2\mathrm{W})$ at a drain voltage of 15V. The balanced P A produces a Psat of 35 $\text{dBm}(3.1\mathrm{W})$ at 40 GHz with a PAE of 22%. These performances were possibly attributed to the excellent GaN HEMT technology as well as the circuit design and optimization. This work provides complete technical support and solutions for ultra-wideband millimeter-wave PAs.

关键词： Voltage measurement Power measurement Power amplifiers Microwave circuits Microwave amplifiers Microwave FET integrated circuits Power generation

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Time Dispersion Influence on Ber in Phased Array Antenna

SSRN

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SSRN 2023年

作者： Liu, Zhihui Dong, Tao Cai, Wanhan Zeng, Hao State Key Laboratory of Space-Ground Integrated Information Technology Space Star Technology Co. Ltd. Beijing100095 China School of Microelectronics and Communication Engineering Chongqing University Shazheng Street 174 Chongqing400044 China

This paper studies the time dispersion influence of phased array antennas on the Bit Error Rate(BER) in digital demodulator for wireless communications. The formula expression of BER is derived, which is considering the shaped filter of baseband symbol. The expression of BER is related with a few parameters such as Signal-to-Noise Ratio(SNR), scanning angle, symbol rate and so on. Several simulation examples prove that the BER expression is correct. © 2023, The Authors. All rights reserved.

关键词： Bit error rate

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Millimeter-Wave Three-Way Coupler Based on Ridge Gap Waveguide technology

Millimeter-Wave Three-Way Coupler Based on Ridge Gap Wavegui...

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Global Symposium on Millimeter Waves, GSMM

作者： Chuhan Wei Ji-Wei Lian Yang Liu Chun Geng Dazhi Ding School of Electronic and Optical Engineering Nanjing University of Science and Technology Nanjing China School of Microelectronics (School of Integrated Circuits) Nanjing University of Science and Technology Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing China Qian Xuesen College Nanjing University of Science and Technology Nanjing China

ISBN: (数字)9798350384956

ISBN: (纸本)9798350384963

A three-way coupler based on ridge gap waveguide (RGW) technology is proposed, which can be applied to the construction of beamforming networks such as Butler matrices. Meanwhile, benefiting from the employment of RGW, the design bears the characteristics of low loss. Within the working frequency from 27.50 GHz to 28.34 GHz, the design enables the trisection of power at the output ports. A constant phase difference of –120°, 0° and 120° can be realized when the input port is excited, respectively. The reflections and isolation coefficients of each port are all lower than –15 dB. The three-way coupler has a wide application prospect in 5G applications for working in the frequency of millimeter-wave.

关键词： Fabrication Time-frequency analysis Transmission line matrix methods Millimeter wave technology Gap waveguide Dielectric losses Couplers

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Theoretical and experimental study on the vertical-variable-doping superjunction MOSFET with optimized process window

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Journal of Semiconductors 2025年第6期46卷 100-108页

作者： Min Ren Meng Pi Rongyao Ma Xin Zhang Ziyi Zhou Qingying Lei Lvqiang Li Zehong Li Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and Engineering (National Exemplary School of Microelectronics) University of Electronic Science and Technology of China Guangdong Institute of Electronic Information Engineering University of Electronic Science and Technology of China Wuxi China Resources Huajing Microelectronics Co.LTD

As a type of charge-balanced power device, the performance of super-junction MOSFETs(SJ-MOS) is significantly influenced by fluctuations in the fabrication process. To overcome the relatively narrow process window of conventional SJ-MOS,an optimized structure "vertical variable doping super-junction MOSFET(VVD-SJ)" is proposed. Based on the analysis using the charge superposition principle, it is observed that the VVD-SJ, in which the impurity concentration of the P-pillar gradually decreases while that of the N-pillar increases from top to bottom, improves the electric field distribution and mitigates charge imbalance(CIB). Experimental results demonstrate that the optimized 600 V VVD-SJ achieves a 35.90% expansion of the process window.

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Design of A Four-Channel Crossover in Ridge- Gap-Waveguide technology for Millimeter-Wave Applications

Design of A Four-Channel Crossover in Ridge- Gap-Waveguide T...

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Global Symposium on Millimeter Waves, GSMM

作者： Yang Liu Ji-Wei Lian Chuhan Wei Chun Geng Dazhi Ding School of Electronic and Optical Engineering Nanjing University of Science and Technology Nanjing China School of Microelectronics (School of Integrated Circuits) Nanjing University of Science and Technology Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing China Qian Xuesen College Nanjing University of Science and Technology Nanjing China

ISBN: (数字)9798350384956

ISBN: (纸本)9798350384963

In this paper, a novel four-channel crossover is proposed utilizing ridge-gap-waveguide (RGW) technology, which can address the crossing of four channels simultaneously. The RGW structure employs air as the medium, contributing to low dielectric loss. The simulated results display that the minimum insertion loss is 0.52dB, the reflection and isolation coefficients are less than −15dB from 27.8 GHz to 28.3 GHz with 28 GHz as the center frequency.

关键词： Simulation Millimeter wave technology Metals Dielectric losses Insertion loss Millimeter wave propagation Propagation losses

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