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Modulating p-type doping of two-dimensional material palladium diselenide

Nano Research 2024年第4期17卷 3232-3244页

作者： Jiali Yang Yu Liu En-Yang Wang Jinbo Pang Shirong Huang Thomas Gemming Jinshun Bi Alicja Bachmatiuk Hao Jia Shu-Xian Hu Chongyun Jiang Hong Liu Gianaurelio Cuniberti Weijia Zhou Mark H Rümmeli Institute for Advanced Interdisciplinary Research(iAIR) University of JinanJinan 250022China Institute for Materials Chemistry Leibniz Institute for Solid State and Materials Research Dresden(IFW Dresden)20 Helmholtz StrasseDresden 01069Germany State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 101408China Institute of Microelectronics of Tianjin Binhai New Area Tianjin 300451China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Lukasiewicz Research Network PORT Polish Center for Technology DevelopmentStablowicka 147Wroclaw 54-066Poland School of Mathematics and Physics University of Science and Technology BeijingBeijing 100083China College of electronic information and optical engineering Nankai UniversityTianjin 300350China Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie Sklodowskiej 34Zabrze 41-819Poland Center for Energy and Environmental Technologies VŠB-Technical University of Ostrava17.Listopadu 15Ostrava 70833Czech Republic State Key Laboratory of Crystal Materials Center of Bio&Micro/Nano Functional MaterialsShandong UniversityJinan 250100China Dresden Center for Computational Materials Science Technische Universität DresdenDresden 01062Germany Dresden Center for Intelligent Materials(GCL DCIM) Technische Universität DresdenDresden 01062Germany Institute for Materials Science and Max Bergmann Center of Biomaterials Technische Universität DresdenDresden 01069Germany Center for Advancing Electronics Dresden Technische Universität DresdenDresden 01069Germany

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor ***-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals *** them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable ***,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor ***,a quantitative method for the controllable doping of PdSe_(2) is yet to be *** this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for *** the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking ***_(2) transistors were soaked in SnCl_(4) solutions with five different *** threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation *** study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

关键词： two-dimensional(2D)materials Lewis acid treatment p-type doping field-effect transistors transfer characteristic

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Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engineered Substrate with Dummy-Grade Material Reuse

Cost-Effective 1200 V SiC MOSFETs on a Novel 150 mm SiC Engi...

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International Electron devices Meeting (IEDM)

作者： Xinhua Wang Xiangjie Xing Xiaolei Yang Xin Yang Yan Chen Guoliang Ma Bixuan Wang Zhifei Zhao Chao Yuan Yun Bai Sen Huang Yipei Lei Jingyuan Shi Fuchao Liu Yuhao Zhang Fenwen Mu Xinyu Liu Sheng Liu Yue Hao HF&HV Device and Integrate Center Institute of Microelectronics Chinese Academy of Science Beijing China State Key Laboratory of WBS Devices and Integrated Technology Nanjing Electronic Devices Institute Nanjing China Center for Power Electronics Systems Virginia Tech Blacksburg VA USA Institute of Technological Sciences Wuhan University Wuhan China TJ Innovative Semiconductor Substrate Technology Co. Ltd. Tianjing China Xidian University Xi'an China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The SiC substrate cost accounts for >50% of final device cost, and its manufacturing suffers from a high carbon footprint. To address this challenge, this work demonstrates a novel 150 mm single-crystal SiC engineered substrate, which homogeneously integrates a prime-grade SiC layer onto a dummy-grade SiC substrate by surface-active bonding. This engineered substrate reuses low-grade SiC substrates, which are often disposed as wastes in the MOSFET industrial production, as well as recycling the high-grade wafer for over 30 times. It thus can enable a drastic reduction in the substrate cost (by ~40%) and the associated carbon footprint. The engineered substrate demonstrates a defect density as low as prime-grade substrate, a low thermal boundary resistance (TBR) of 2.8 m 2 K/GW, as well as very small electric field at the bonded interface. The TBR is among the lowest reported for the SiC interfaces bonded with SiC, GaN, and $\text{Ga}_device\mathrm{O}_technology$ . The 150 mm, 1200 V-class SiC epi grown on this substrate achieved a high killer-defect-free yield of 99.2%. The 1200 V, 20 $\mathrm{m}\Omega$ SiC MOSFETs fabricated on this 150 mm epi demonstrate a yield over 70% (for $I_{\text{DSS}} < 2\mu A$ . at 1200V), as well as a performance and reliability comparable to the state-of-the-art commercial devices. Circuit robustness tests reveal no degradation of the bonding interface under a >250 A, 10 ms surge current. To the best of our knowledge, this is the first report of the wafer-level device data and high-current robustness for a SiC engineering substrate. These results show the great potential of this new substrate technology to enable more economical and sustainable SiC power electronics.

关键词： MOSFET Costs Silicon carbide Thermal resistance Thermal engineering Robustness Bonding Surges Substrates Carbon footprint

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Enhanced thermoelectric performance in Ga_(x)Co_(4)Sb_(12.3-y)Te_(y) skutterudites via suppressing bipolar effects for commercial application

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Journal of Materiomics 2020年第2期6卷 240-247页

作者： Jing Jiang Rui Zhang Chengcheng Yang Yi Niu Ting Zhou Yan Pan Chao Wang Clean Energy Materials and Engineering Center State Key Laboratory of Electronic Thin Film and Integrated DeviceSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731China

The n-type filled and doped skutterudites Ga_(x)Co_(4)Sb_(12.3) and Ga_(0.2)Co_(4)Sb_(11.3)Te composites with the welldistributed GaSb nanoinclusions are synthesized through the manipulating of metastable Ga fillers and enrichment of Sb by an in-situ method with a proper annealing *** atoms can fill the icosahedron cages of skutterudite at high temperature,but at low temperature,they are driven out from the lattice voids and form the second phase of GaSb at grain *** presence of GaSb second phases reduces the thermal conductivity *** doping leads to a significant increase in carrier concentration of Ga_(0.2)Co_(4)Sb_(11.3)Te,thus largely suppresses the bipolar effect of Ga_(x)Co_(4)Sb_(12.3),resulting in a great enhancement in power ***,Te doping induces mass and strain fluctuation,which decreases the lattice thermal conductivity ***,the maximum ZT is increased from 0.56 for Ga_(0.2)Co_(4)Sb_(12.3) at 573 K to 1.48 for Ga_(0.2)Co_(4)Sb_(11.3)Te at 873 K,which is advantageous to improve the thermoelectric conversion efficiency for commercial application.

关键词： Thermoelectric Skutterudite Second phase Bipolar effect

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Study of Monolithic Multiband SAW Filters for S-Band

Study of Monolithic Multiband SAW Filters for S-Band

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IEEE International Symposium on Applications of Ferroelectrics (ISAF)

作者： Mijing Sun Liping Zhang Shibin Zhang Pengcheng Zheng Juxing He Xinjian Ke Kai Huang Xin Ou State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China School of Microelectronics University of Science and Technology of China Hefei China Shanghai Xin Ou Integration Technology Company Ltd. Shanghai China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350371901

ISBN: (纸本)9798350371918

In this work, a set of resonators covering the S-band (2-4 GHz) in frequency was prepared based on 42°YX LiTaO3/SiC substrates. The fabricated SH-SAW resonators operate in the S-band with high quality (Q) factors of 550–2114 and electromechanical coupling coefficients (K 2 ) of 8.30%–9.68%. Then, monolithic multiband filters with full S-band coverage were designed and prepared by adjusting IDT period of the resonators. All filters have the same electrode thickness (120 nm Al) and film thickness (510 nm) and are prepared using the same set of experimental procedures. The S-band filters show low insertion loss (IL) of 0.67–1.61 dB, 3-dB fractional bandwidth (FBW) of 3.71%–5.63%, and out-of-band (OoB) rejection larger than 28 dB. The frequency drifts of resonators and filters were also measured. The results show the excellent temperature stability of the fabricated devices. These demonstrated SAW devices with excellent comprehensive performances show the great potential of LiTaO3/SiC as the platform for future wireless communications.

关键词： Wireless communication Temperature measurement Q-factor Filters Resonant frequency Surface acoustic wave devices Frequency measurement Resonators Thermal stability Substrates

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Simulation Study on 1200V CS-SemiSJ-IGBT for Reduced Switching Loss and Fast Switching

Simulation Study on 1200V CS-SemiSJ-IGBT for Reduced Switchi...

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International Conference on Solid-state and integrated Circuit technology

作者： Luping Li Zehong Li Peng Chen Yuzhou Wu Qiansheng Rao Ming Li Haifeng Qin Li Wan Yang Yang Wei Li Min Ren State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China (UESTC) Chengdu China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing China Shenzhen Institute for Advanced Study UESTC Shenzhen China School of Aeronautics and Astronautics UESTC Chengdu China China Resources Microelectronics (Chongqing) Ltd. Chongqing China Shanghai Super Semiconductor Technology Company Ltd. Shanghai China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Characteristics of $1200\mathrm{V}$ CS-SemiSJ-IGBT and its pillar thickness influence on key performance are investigated though TCAD simulation in this work. Firstly, $1200\mathrm{V}$ CS-SemiSJ-IGBT with $45 \mu \mathrm{m}$ thick SJ-pillar is illustrated to present performance characteristics and advantage of CS-SemiSJ-IGBT. Secondly, $1200\mathrm{V}$ CS-SemiSJ-IGBTs with different SJ-pillar thickness are investigated to reveal its optimal SJ-pillar thickness. As a conclusion, the $1200\mathrm{V}$ CS-SemiSJ-IGBT with $45 \mu \mathrm{m}$ thick SJ-pillar can provide comparative trade-off as FullSJ-IGBT with the same voltage level.

关键词： integrated circuit technology Bipolar transistors Switching loss Voltage Switches Logic gates

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Energy fluctuations and transitions in non-equilibrium inter-particle collisions

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Results in Physics 2025年 74卷

作者： Wei, Tongli Cao, Xiansheng Li, Yaojin Jia, Chenglong Key Laboratory of Physics and Photoelectric Information Functional Materials Sciences and Technology Microelectronics and Solid-State Electronics Device Research Center School of Electrical and Information Engineering North Minzu University Yinchuan 750021 China School of Microelectronics and Control Engineering Changzhou University Changzhou 213164 China Department of Physics School of Science Lanzhou University of Technology Lanzhou 730050 China Lanzhou Center for Theoretical Physics & Key Laboratory of Theoretical Physics of Gansu Province Lanzhou University Lanzhou 730000 China

The energy fluctuations and transitions, as well as the random forces, of a Brownian particle in the short-time limit of one single collision are studied using microscopic kinetic theory. Fluctuations and random forces play fundamental roles in non-equilibrium dynamics and statistical mechanics. We find that the mean-square of random forces is proportional to the energy fluctuation for Brown particles. By considering collision processes between an incident particle and background molecules within the framework of the hard-sphere collision model, we analytically investigate energy fluctuations and transitions based on microscopic kinetic theories. Results for the example of the thermal equilibrium gas show that the energy fluctuations arise from two distinct contributions: kinetic fluctuations resulting from the random selection of scattering cross-section positions, which are proportional to the particle's initial energy;and thermal fluctuations associated with the velocity distribution of molecules, which are proportional to gas temperature. We demonstrate that the energy flux density is equal to the temperature difference ΔT multiplied by the thermal conductivity coefficient κ in two mixed gases under thermal equilibrium. Therefore, a microscopic kinetic perspective is provided for the second law of thermodynamics in this specific scenario. Our finding helps understand random dynamics and relaxation processes in non-equilibrium systems. © 2025 The Authors

关键词： Brownian motion Collision theories Energy fluctuation Energy transition Microscopic kinetic theories Non-equilibrium statistical mechanics

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Hydrogen bonding networks for tunable organic neuromorphic transistor arrays and in-sensor computing

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Matter 2025年

作者： Zhou, Tiantian Zhang, Feifan Gao, Jiandong Nie, Kaiming Li, Gen Huang, Wanxin Wang, Ruiheng Tian, Guofeng Ling, Haifeng Lin, Hongzhen Zhao, Yan Yang, Hui Xu, Jiangtao Ji, Deyang Hu, Wenping Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin300072 China School of Microelectronics Tianjin University Tianjin300072 China Department of Chemical and Metallurgical Engineering School of Chemical Engineering Aalto University Aalto00076 Finland State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials Nanjing University of Posts & Telecommunications Nanjing210023 China State Key Laboratory of Chemical Resource Engineering Beijing University of Chemical Technology Beijing100029 China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou215123 China Department of Materials Science State Key Laboratory of Molecular Engineering of Polymers Laboratory of Molecular Materials and Devices Fudan University Shanghai200438 China Key Laboratory of Organic Integrated Circuit Ministry of Education Tianjin University Tianjin300072 China Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University Tianjin300072 China State Key Laboratory of Advanced Materials for Intelligent Sensing Tianjin University Tianjin300072 China

Inspired by neural architectures, synaptic transistors incorporating sensing, memory, and computing functionalities within one device have garnered widespread attention. However, achieving high carrier mobility and enduring synaptic plasticity remains challenging due to the unbalanced charge trapping effect at the dielectric/semiconductor interface. Here, introducing the hydrogen bonding networks, constructed via double dielectric materials, significantly improves the interface characteristics. This approach could modulate the carrier mobility of fabricated synaptic transistors from 0.49 to 22 cm2 V−1 s−1 and increase synaptic plasticity from 67 to 10,000 s with an ultra-low energy consumption of 24 aJ per synaptic event. Moreover, we have devised an innovative linear self-attention-based spatial and channel joint attention (LSSCA) network architecture for spiking neural networks (SNNs) that exploits synaptic transistors to enhance image classification accuracy from 76% to 99%. This study provides a direct and effective strategy for engineering optically controlled synaptic transistors that demonstrate superior carrier mobility and prolonged plasticity, promising potential in low-energy, high-precision neuromorphic applications. © 2025 Elsevier Inc.

关键词： Precision engineering

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180nm BCD technology Platform with 8V to 65V Isolated LDMOS

180nm BCD Technology Platform with 8V to 65V Isolated LDMOS

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International Conference on Solid-state and integrated Circuit technology

作者： Qi Ding Renxiong Li Ning Ning Jun Huang Yutuo Guo Yu Wang Kunqin He Yaxin Liu Huaishan Wang Juan Tang Qiuyue Huo Minghong Yuan Pan Peng Ming Qiao Lulu Peng Bo Zhang United Microelectronics Center Co. Ltd Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

This work presents a 180nm BCD technology platform with 1.8V/5V CMOS, BJT, 8-65V isolated LDMOS (Lateral Double-Diffused MOSFET) and other devices such as diodes, resistors, capacitors etc., which possesses competitiv... 详细信息

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

关键词： Resistors Performance evaluation MOSFET Capacitors CMOS technology Libraries Substrates

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Analytical transient phase change heat transfer model of wearable electronics with a thermal protection substrate

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Applied Mathematics and Mechanics(English Edition) 2020年第11期41卷 1599-1610页

作者： Yingli SHI Junyun JI Yafei YIN Yuhang LI Yufeng XING Institute of Solid Mechanics Beihang UniversityBeijing 100191China BOE Technology Group Company Limited Beijing 100176China University Electronic Science and Technology China State Key Laboratory of Electronic Thin Films and Integrated DeviceChengdu 610054China Institute of Structure and Environment Engineering Beijing 100076China State Key Laboratory of Structural Analysis for Industrial Equipment Dalian University of TechnologyDalian 116024Liaoning ProvinceChina

As thermal protection substrates for wearable electronics,functional soft composites made of polymer materials embedded with phase change materials and metal layers demonstrate unique capabilities for the thermal protection of human ***,we develop an analytical transient phase change heat transfer model to investigate the thermal performance of a wearable electronic device with a thermal protection *** model is validated by experiments and the finite element analysis(FEA).The effects of the substrate structure size and heat source power input on the temperature management efficiency are investigated systematically and *** results show that the objective of thermal management for wearable electronics is achieved by the following thermal protection *** metal thin film helps to dissipate heat along the in-plane direction by reconfiguring the direction of heat flow,while the phase change material assimilates excessive *** results will not only promote the fundamental understanding of the thermal properties of wearable electronics incorporating thermal protection substrates,but also facilitate the rational design of thermal protection substrates for wearable electronics.

关键词： wearable electronics functional composite theoretical heat transfer analysis thermal management

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Recess-Patterned Ohmic Contact technology for AlGaN/GaN Heterostructures

Recess-Patterned Ohmic Contact Technology for AlGaN/GaN Hete...

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International Conference on ASIC

作者： Xinyi Tang Nick Tao Yang Jiang Qing Wang Fangzhou Du Hongyu Yu School of Microelectronics Southern University of Science and Technology Shenzhen China Maxscend Microelectronics Company Limited Wuxi China Department of Electrical and Electronic Engineering The University of Hong Kong China Engineering Research Center of Integrated Circuits for Next-Generation Communications Ministry of Education Southern University of Science and Technology Shenzhen China GaN Device Engineering Technology Research Center of Guangdong Southern University of Science and Technology Shenzhen China The Key Laboratory of the Third Generation Semi-Conductor Southern University of Science and Technology Shenzhen China

In this paper, a recess-patterned ohmic contact technology is presented, which shows a promising way to reduce the ohmic contact resistance for AlGaN/GaN heterostructures. The influences of annealing temperature, recessed-pattern size and shape are investigated, respectively. The mean value of ohmic contact resistance (R C ) is 0.345 Ω·mm, which is 33.8% lower than conventional non-recessed metal-stacking scheme. The technology Computer Aided Design (TCAD) simulation results indicate the two-dimensional electron gas (2-DEG) concentration significantly increasing near the edge of recessed-pattern. This effect shortens the distance between ohmic contact metal and 2-DEG, which may effectively contribute to the superior ohmic contact performance.

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