检索结果-内蒙古大学图书馆

Demonstration of a GaN-based P-channel FinFET with high current density based on multi-channel structure

Applied Physics Letters 2025年第20期126卷

作者： Liu, Xu Xu, Shengrui Zhang, Tao Tao, Hongchang Su, Huake Gao, Yuan Xie, Lei Wang, Xinhao Zhang, Jincheng Hao, Yue State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an710071 China

In this work, we report a p-GaN/u-GaN/AlGaN multi-channel structure using d-doping. The multi-channel structure exhibits a low sheet resistance of 12.9 kX/sq. The AlGaN/GaN/AlGaN sandwich structure results in a significant reduction in channel width and a substantial increase in restricted ability for holes. The multi-channel structure has markedly enhanced sheet hole density in comparison to the conventional single-channel structure. Meanwhile, the carriers are distributed in different channels, thereby diminishing the inter-carrier scattering effect. The hole mobility of the multi-channel structure remains largely unaffected by the increased sheet hole density. Due to the excellent conductivity, the ohmic contact resistance of the multi-channel structure is as low as 15.9 X mm. Moreover, a p-channel FinFET device was fabricated based on the multi-channel structure. The device exhibits a remarkable high saturation current density of 112 mA/mm, which indicates that the multi-channel structure has potential for high-performance GaN p-channel field effect transistors. © 2025 American Institute of Physics. All rights reserved.

关键词： FinFET

来源：评论

学校读者我要写书评

暂无评论

Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing

Experimental and Theoretical Study on failure mechanism of S...

引用

International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Tong Zhou Min Ren Xin Zhang Siqi Liang Jianyu Zhou Fang Zheng Rongyao Ma Meng Pi Zehong Li Xinkai Guo Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu P. R. China Guangdong Institute of Electronic Information Engineering University of Electronic Science and Technology of China Guangdong P. R. China China Resources Microelectronics Co. LTD Jiangsu P. R. China

ISBN: (数字)9798350394825

ISBN: (纸本)9798350394832

H3TRB-HVDC test is the appropriate test to prove the robustness of chip against humidity and high electric fields. The failure mechanism of Superjunction MOSFET (SJ-MOS) in H3TRB-HVDC test was studied. By the comparison tests of SJ-MOS with different bias voltage, packaging materials and passivation layers, as well as the comparison tests between SJ-MOS and conventional power MOSFETs (C-MOS) with the same breakdown voltage class, it is found that both high electric field in the termination region, moisture and stress play important roles in the failure. Combined with simulation, a new failure model of H3TRB is proposed.

关键词： Semiconductor device modeling MOSFET Analytical models Surface resistance Moisture Failure analysis Humidity

来源：评论

学校读者我要写书评

暂无评论

Resistive Memory-based Neural Differential Equation Solver for Score-based Diffusion Model

arXiv

引用

arXiv 2024年

作者： Yang, Jichang Chen, Hegan Chen, Jia Wang, Songqi Wang, Shaocong Yu, Yifei Chen, Xi Wang, Bo Zhang, Xinyuan Cui, Binbin Li, Yi Lin, Ning Xu, Meng Li, Yi Xu, Xiaoxin Qi, Xiaojuan Wang, Zhongrui Zhang, Xumeng Shang, Dashan Wang, Han Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Institute of the Mind the University of Hong Kong Hong Kong University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong

Human brains image complicated scenes when reading a novel. Replicating this imagination is one of the ultimate goals of AI-Generated Content (AIGC). However, current AIGC methods, such as score-based diffusion, are still deficient in terms of rapidity and efficiency. This deficiency is rooted in the difference between the brain and digital computers. Digital computers have physically separated storage and processing units, resulting in frequent data transfers during iterative calculations, incurring large time and energy overheads. This issue is further intensified by the conversion of inherently continuous and analog generation dynamics, which can be formulated by neural differential equations, into discrete and digital operations. Inspired by the brain, we propose a time-continuous and analog in-memory neural differential equation solver for score-based diffusion, employing emerging resistive memory. The integration of storage and computation within resistive memory synapses surmount the von Neumann bottleneck, benefiting the generative speed and energy efficiency. The closed-loop feedback integrator is time-continuous, analog, and compact, physically implementing an infinite-depth neural network. Moreover, the software-hardware co-design is intrinsically robust to analog noise. We experimentally validate our solution with 180 nm resistive memory in-memory computing macros. Demonstrating equivalent generative quality to the software baseline, our system achieved remarkable enhancements in generative speed for both unconditional and conditional generation tasks, by factors of 64.8 and 156.5, respectively. Moreover, it accomplished reductions in energy consumption by factors of 5.2 and 4.1. Our approach heralds a new horizon for hardware solutions in edge computing for generative AI applications. © 2024, CC BY-NC-SA.

关键词： Diffusion

来源：评论

学校读者我要写书评

暂无评论

Hardware architecture and algorithm co-design for multilayer photonic neuromorphic network with excitable VCSELs-SA

Hardware architecture and algorithm co-design for multilayer...

引用

Optical Fiber Communication Conference, OFC 2020

作者： Xiang, Shuiying Ren, Zhenxing Zhang, Yahui Guo, Xingxing Song, Ziwei Wen, Aijun Hao, Yue State Key Laboratory of Integrated Service Networks Xidian University Xi'an710071 China State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xidian University Xi'an710071 China

We design a multi-layer photonic spiking neural network with excitable VCSELs-SA. Numerical results based on the rate-equation models show that the proposed neuromorphic network architecture is capable of solving the ... 详细信息

ISBN: (数字)9781943580712

ISBN: (纸本)9781943580712

关键词： Multilayer neural networks

来源：评论

学校读者我要写书评

暂无评论

A Flexible Bimodal Self-Powered Optoelectronic Skin for Comprehensive Perception of Multiplexed Sensoring Signals

SSRN

引用

SSRN 2024年

作者： Wu, Weitong Xiao, Yu Li, Mengmeng Wei, Zhongming Long, Haoran Shen, Guozhen Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits and Electronics Beijing Institute of Technology Beijing100081 China State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China Center of Materials Science and Optoelectronic Engineering University of Chinese Academy of Sciences Beijing100049 China

Multi-modal electronics skin that mimics collaborative operation of natural skin establishes a substantial foundation for next-generation smart healthcare, biomimetic science and related interdisciplinary fields. However, the power consumption of multi-channels and the decoupling complexity of fused-information that determine the effectiveness of the system still remain enormous challenge. Here, a bimodel self-powered optoelectronic fusion system with a vertical integration structure to achieve mechanical and illumination perception is reported, enabling simultaneous monitoring of human motion signal and environmental illumination. This device comprises a photo-conductive layer of MAPbI3@PVA and a teflon (PTFE) friction layer of TENG-based sensor, characterizing the mechanical and illuminance information in the form of pulse electrical signals and continuous resistance variation curves, respectively. This bimodel sensor exhibits the highest photoelectric responsivity of 64 mA/W and saturated output power of 156 μW/cm2 within the visible illumination range. Moreover, the environmental and mechanical stability of the device have been significantly improved, which is attributed to the inherent flexibility and hydrophilicity of PVA wrapped in perovskite grains. Finally, A 3×3 bimodel array is attached onto the volunteer's cervical vertebra for classifying motion posture and ambient illuminance by monitoring the surface tension distribution under different lighting conditions, validating the feasibility and promotion potential for application scenarios. © 2024, The Authors. All rights reserved.

关键词： Perovskite

来源：评论

学校读者我要写书评

暂无评论

High-responsivity solar-blind photodetector based on MOCVD-grown Si-dopedβ-Ga_(2)O_(3)thin film

引用

Chinese Physics B 2021年第5期30卷 595-601页

作者： Yu-Song Zhi Wei-Yu Jiang Zeng Liu Yuan-Yuan Liu Xu-Long Chu Jia-Hang Liu Shan Li Zu-Yong Yan Yue-Hui Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China

Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are *** results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.

关键词： Si-dopedβ-Ga_(2)O_(3) metal-organic chemical vapor deposition(MOCVD) solar-blind high responsivity

来源：评论

学校读者我要写书评

暂无评论

Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs

Comparison of DC/AC Hot Carrier Degradation between Short Ch...

引用

International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Hao Chang Yongkui Zhang Longda Zhou Zhigang Ji Hong Yang Qianqian Liu Yongliang Li Renrong Liang Eddy Simoen Huilong Zhu Jun Luo Wenwu Wang Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing China Microelectronics Institute University of Chinse Academy of Sciences Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Microelectronics Shanghai Jiaotong University Shanghai China Institute of Microelectronics Tsinghua University Beijing China IMEC Leuven Belgium

In this study, both direct current (DC) and alternating current (AC) hot carrier degradation (HCD) of Si Bulk p-FinFETs and SiGe SOI p-FinFETs with 40 nm channel length are compared. The time exponent (n), activation energy (EA) and voltage acceleration factor (VAF) under different HCD stress conditions are investigated. Experiments show that DC HCD of Si FinFETs is almost 1.2 times of that of SiGe FinFETs at room temperature. However, SiGe SOI FinFETs are more sensitive to AC signal frequency than Si Bulk FinFETs in AC HCD measurement. With AC frequency increasing, oxide traps capture in AC HCD of SiGe FinFETs is becoming dominant due to the reduction of slow-interface traps capture.

关键词： Degradation Temperature sensors Temperature measurement Temperature Hot carriers FinFETs Silicon

来源：评论

学校读者我要写书评

暂无评论

Multiscale Structure Boosting Bi-Functional Intelligent Anti-Corrosionand Microwave Absorption Based on Ferromagnetic Absorber

SSRN

引用

SSRN 2024年

作者： Tian, Wei Feng, Quanyuan Zhang, Linbo Liu, Yifan Jian, Xian Deng, Longjiang Institute of Microelectronics School of Information Science and Technology Southwest Jiaotong University Chengdu611756 China National Engineering Researching Centre of Electromagnetic Radiation Control Materials Key Laboratory of Multi-Spectral Absorbing Materials and Structures Ministry of Education State Key Laboratory of Electronic Thin Films and Integrated Devices School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu611731 China School of Materials and Energy University of Electronic Science and Technology of China Chengdu611731 China University of Electronic Science and Technology of China Huzhou313001 China

Carbonyl iron absorbers (CI) face significant challenges in practical applications, such as corrosion, interface bonding failure, detachment, and high maintenance costs. Herein, we have developed intelligent self-healing technology based on proactive/passive mechanisms via in situ synthesis of self-healing factors (polydopamine/benzotriazole, PDA/BTA) and physical barrier layers (SiO2/1,1,1,3,3,3-hexamethyl disilazane, SiO2/HMDS) to enhance corrosion resistance, while also being compatible with efficient microwave absorption characteristics. The unique multiscale structure gives full play to the utilization of the roles of each functional layer, including the intelligent self-healing features of PDA/BTA, physical shielding and spatial confinement characteristics of SiO2/HMDS, and magnetic-dielectric synergistic mechanism resulted from the good impedance matching characteristics, the conduction loss, the interfacial polarization loss and natural resonance. The as-fabricated composites achieved an exceptional minimum reflection loss value of -55.4 dB at 10.7 GHz and the effective absorption band of 7.6 GHz. Moreover, it still exhibits obvious self-healing and corrosion resistance characteristics after 360 hours corrosion treatment, ascribed to the self-healing mechanism of PDA/BTA and the blocking intervention effect of SiO2/HMDS. This work is considered to pave the way for the synthesis of high-performance magnetic absorbers, especially in enhancing their intelligent self-healing ability in corrosive environments. © 2024, The Authors. All rights reserved.

关键词： Corrosion resistance

来源：评论

学校读者我要写书评

暂无评论

integrated lithium niobate photonic millimeter-wave radar

arXiv

引用

arXiv 2023年

作者： Zhu, Sha Zhang, Yiwen Feng, Jiaxue Wang, Yongji Zhai, Kunpeng Feng, Hanke Pun, Edwin Yue Bun Zhu, Ning Hua Wang, Cheng Institute of Intelligent Photonics Nankai University Tianjin300071 China Department of Electrical Engineering State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong Kowloon Hong Kong College of Microelectronics Faculty of Information Technology Beijing University of Technology Beijing100124 China Department of Chemistry City University of Hong Kong Kowloon Hong Kong State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

Millimeter-wave (mmWave, > 30 GHz) radars are key enabler in the upcoming 6G era for high-resolution sensing of the surroundings and detection of targets. Photonic radar provides an effective approach to overcome the limitations of electronic radars thanks to the high frequency, broad bandwidth, and excellent reconfigurability of photonic systems. However, conventional photonic radars are mostly realized in tabletop systems composed of bulky discrete components, whereas the more compact integrated photonic radars are difficult to reach the mmWave bands due to the unsatisfactory bandwidths and signal integrity of the underlying electro-optic modulators. Here, we overcome these challenges and demonstrate a centimeter-resolution integrated photonic radar operating in the mmWave V band (40-50 GHz) based on a 4-inch wafer-scale thin-film lithium niobate (TFLN) technology. The fabricated TFLN mmWave photonic integrated circuit consists of a first electro-optic modulator capable of generating a broadband linear frequency modulated mmWave radar waveform through optical frequency multiplication of a low-frequency input signal, and a second electro-optic modulator responsible for frequency de-chirp of the received reflected echo wave, therefore greatly relieving the bandwidth requirements for the digital-to-analog converter in the transmitter and analog-to-digital converter in the receiver. Thanks to the absence of optical and electrical filters in the system, our integrated photonic mmWave radar features continuous on-demand tunability of the center frequency and bandwidth, currently only limited by the bandwidths of electrical amplifiers. By operating on the mmWave V band 40-50 GHz, we achieve multi-target ranging with a resolution of 1.50 cm and velocity measurement with a resolution of 0.067 m/s. Furthermore, we construct an inverse synthetic aperture radar (ISAR) and successfully demonstrate the imaging of targets with various shapes and postures with a two-dimensional r

关键词： Frequency modulation

来源：评论

学校读者我要写书评

暂无评论

Room-Temperature Anomalous Inverse Spin Hall Effect in an Easy-Plane Antiferromagnetic Insulator for Néel-Vector Manipulation and Detection

引用

Physical Review Applied 2022年第3期18卷 034032-034032页

作者： Yupeng Hui Yueying Zhang Yue-Qi Wang Xin Gan Lei Wang Shaoxuan Liu Jincheng Zhang Yue Hao Haijiao Harsan Ma Low Dimensional Quantum Physics & Device Group School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 China Collaborative Innovation Center of Quantum Information of Shaanxi Province Xidian University Xi'an 710071 China

Metallic antiferromagnets are demonstrated to show an unconventional spin Hall effect (SHE) and the inverse spin Hall effect (ISHE), which are very promising for Néel-vector detection. However, the ISHE is absent in insulating antiferromagnets, as it does not conduct charge current. Here, we report our observation of the anomalous ISHE at the interface of the easy-plane insulator antiferromagnetic nickel oxide and the heavy metal platinum. We find that, at the interface of NiO/Pt, the ISHE generates an anomalous hysteretic transverse voltage in both Hall and planar Hall measurements, depending on spin-current propagation and the polarization direction. The observation of a nonzero transverse voltage in Pt indicates the appearance of a spin current with longitudinal polarization reflected from NiO, implying Néel-vector reorientation from the transverse to longitudinal direction. Our simulation indicates that the Néel vector can be reoriented by a spin current injected from the heavy metal and an applied magnetic field. The observed anomalous ISHE permits the manipulation and detection of the Néel order in insulating antiferromagnets.

关键词： Electrical generation of spin carriers Electrical properties Inverse spin Hall effect Magnons Antiferromagnets Magnetic insulators Magnetic multilayers Transition metal oxides

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：