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Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs

Chinese Physics B 2022年第1期31卷 675-679页

作者： Ruize Feng Bo Wang Shurui Cao Tong Liu Yongbo Su Wuchang Ding Peng Ding Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100029China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China

We fabricated a set of symmetric gate-recess devices with gate length of 70 *** kept the source-to-drain spacing(L_(SD))unchanged,and obtained a group of devices with gate-recess length(L_(recess))from 0.4µm to 0.8µm through process *** order to suppress the influence of the kink effect,we have done SiN_(X) passivation *** maximum saturation current density(ID_(max))and maximum transconductance(g_(m,max))increase as L_(recess) decreases to 0.4µ*** this time,the device shows ID_(max)=749.6 mA/mm at V_(GS)=0.2 V,V_(DS)=1.5 V,and g_(m,max)=1111 mS/mm at V_(GS)=−0.35 V,V_(DS)=1.5 ***,as L_(recess) increases,it causes parasitic capacitance C_(gd) and g_(d) to decrease,making f_(max) drastically *** L_(recess)=0.8µm,the device shows f_(T)=188 GHz and f_(max)=1112 GHz.

关键词： InP HEMT InGaAs/InAlAs current gain cut-off frequency(fT) maximum oscillation frequency(f_(max)) gate-recess length(L_(recess))

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Oscillation of Dzyaloshinskii–Moriya interaction driven by weak electric fields

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Chinese Physics B 2024年第2期33卷 487-491页

作者：陈润泽曹安妮王馨苒柳洋杨洪新赵巍胜 Fert Beijing Institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Hefei Innovation Research Institute Beihang UniversityHefei 230013China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266000China National Laboratory of Solid State Microstructures School of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Beijing Microelectronics Technology Institute Beijing 100076China

Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.

关键词： Dzyaloshinskii-Moriya interaction weak electric field control effect Rashba spin-orbit coupling interfacial orbital hybridization

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A novel active-passive protection strategy endows carbonyl iron with excellent intelligent anti-corrosion and microwave absorption dual functional characteristics

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Nano Research 2025年第1期18卷 487-500页

作者： Wei Tian Quanyuan Feng Linbo Zhang Yinfan Liu Xian Jian Longjiang Deng Institute of Microelectronics School of Information Science and TechnologySouthwest Jiaotong UniversityChengdu 611756China National Engineering Researching Centre of Electromagnetic Radiation Control Materials Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of EducationState Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731China The Yangtze Delta Region Institute(Huzhou)&School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaHuzhou 313001China

Carbonyl iron absorbers(CI)face significant challenges in practical applications,such as corrosion,interface bonding failure,detachment,and high maintenance ***,we have developed intelligent self-healing technology based on proactive/passive mechanisms via in situ synthesis of self-healing factors(polydopamine/benzotriazole(PDA/BTA))and physical barrier layers(SiO_(2)/1,1,1,3,3,3-hexamethyl disilazane,SiO_(2)/HMDS)to enhance corrosion resistance,while also being compatible with efficient microwave absorption *** unique multiscale structure gives full play to the utilization of the roles of each functional layer,including the intelligent self-healing features of PDA/BTA,physical shielding and spatial confinement characteristics of SiO_(2)/HMDS,and magnetic-dielectric synergistic mechanism resulted from the good impedance matching characteristics,the conduction loss,the interfacial polarization loss and natural *** asfabricated composites achieved an exceptional minimum reflection loss value of-55.4 dB at 10.7 GHz and the effective absorption band of 7.6 ***,it still exhibits obvious self-healing and corrosion resistance characteristics after 360 h corrosion treatment,ascribed to the self-healing mechanism of PDA/BTA and the blocking intervention effect of SiO_(2)/*** work is considered to pave the way for the synthesis of high-performance magnetic absorbers,especially in enhancing their intelligent self-healing ability in corrosive environments.

关键词： microwave absorption intelligent self-healing technology carbonyl iron multiscale structure magneticdielectric synergistic mechanism

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Improved positive bias temperature instability of n-type vertical C-shaped-channel nanosheet FET by forming gas annealing

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Microelectronic Engineering 2025年 299卷

作者： Shi, Yunfei Jiang, Songyi Yang, Hong Zhang, Yongkui Zhou, Longda Ji, Zhigang Liu, Qianqian Wang, Qi Zhu, Huilong Luo, Jun Wang, Wenwu Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing100029 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Microelectronics Shanghai Jiaotong University Shanghai200240 China Microelectronics Institute University of Chinese Academy of Sciences Beijing100049 China

In this article, the influence of Forming Gas Annealing (FGA) on the Positive Bias Temperature Instability (PBTI) characteristics of n-vertical C-shaped-channel nanosheet FET (n-VCNFET) is studied. The experimental results show that the extra FGA can significantly suppress both the initial and generated interface traps in PBTI. Moreover, in ultra-fast PBTI the pre-existing trap and total trap of VCNFET due to FGA decreases by 35 % and 31 %, respectively. The energy level of the oxide trap under PBTI and recovery doesn't change, in other words, the FGA induces the oxide trap density of the devices to decrease by 36 % at 125 °C and 1.4 V VOV. The optimization effect of FGA annealing has been further confirmed from the perspective of trap generation. It provides a guideline for the PBTI improvement of VCNFET in trap scopes. © 2025 Elsevier B.V.

关键词： Nanosheets

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Enhanced back-illuminated Ga_(2)O_(3)-based solar-blind ultraviolet photodetectors

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Science China(Technological Sciences) 2024年第11期67卷 3477-3484页

作者： YAN ZuYong ZHI YuSong JI XueQiang YUE JianYing WANG JinJin LIU Zeng LI Shan LI PeiGang HOU ShangLin WU Gang LEI JingLi TANG WeiHua School of Science State Key Laboratory of Advanced Processing and Recycling of Nonferrous MetalsLanzhou University of TechnologyLanzhou 730050China China Academy of Launch Vehicle Technology Beijing 100076China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China School of Electronic Information Engineering Inner Mongolia UniversityHohhot 010021China College of Electronic and Optical Engineering&College of Microelectronics National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing TechnologiesNanjing University of Posts and TelecommunicationsNanjing 210023China

Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical ***,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical ***,we construct a high-performance Ga_(2)O_(3)photodetector realized by *** high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated ***,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.

关键词： Ga_(2)O_(3) back-illuminated solar-blind photodetector

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A High-Efficiency Double Step Down Converter with Dual-Mode Control and Seamless Mode Transition in A Wide Load Current Range 56

A High-Efficiency Double Step Down Converter with Dual-Mode ...

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56th IEEE International Symposium on Circuits and Systems, ISCAS 2023

作者： Xue, Weidong Zhang, Yiseng Lai, Rongxing Zhao, Yutong Fang, Jian Ren, Junyan School of Microelectronics Fudan University Shanghai China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

This paper presents a high-efficiency double step-down power converter with a dual-mode control scheme in a wide load range. A voltage-mode control scheme with an instant Tzcd and \text{Tsw}/2 mirror is employed in discontinuous conduction mode (DCM). It avoids negative inductor current in DCM and improves efficiency in light load with minimized voltage ripples. Meanwhile, a current-mode control scheme is used in continuous conduction mode (CCM), sharing a single feedback controller and \text{Tsw}/2 mirror controller with DCM. The inherent time difference of detection cycles between DCM and CCM is used to realize a seamless dual-mode transition. The converter is designed with a conversion for 12.0 V to 1.0 V at 1-MHz switching frequency, based on a 0.15-{\mu m} high-voltage BCD process. The simulation shows that a power efficiency of 79.8% is achieved with a dual-mode control under a 200-mA current load, which is the 7.2% higher than the counterpart without dual-mode control. Moreover, the power efficiency is above 76.5% even at a 50mA load with an improvement of 14.1%. © 2023 IEEE.

关键词： Mirrors

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Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu Xuetao Gan Wei Zhong Yan Liu Genquan Han Yue Hao Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip Laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China School of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic ***,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane ***,we acquired clear evidences of ferromagnetic behavior at room *** structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and *** a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room *** addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

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Distribution of HCD-induced Interface Trap in nano-scale Si n-FinFET due to Corner Effect

Distribution of HCD-induced Interface Trap in nano-scale Si ...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Mingvang Sun Ruixi Yu Yunfei Shil Hong Yang Qianqian Liu Bo Tang Xiaobin He Jianfeng Gao Junfeng Li Huaxiang Yin Jun Luo Wenwu Wang Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Microelectronics Institute University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350360608

ISBN: (纸本)9798350360615

In this paper, in order to understand the interface trap distribution along channel induced by Hot Carrier Degradation (HCD) of nano-scale Si n-FinFETs, both Bias Temperature Instability (BTI) and HCD of n-FinFETs are compared. Under BTI stress, the short-channel n-FinFET is influenced by both corner passivation effects and a larger corner electric field. Interface traps exhibit a lower density in the short-channel device at lower stress voltages, but surpass it at higher stress voltages. During HCD stress, the degradation process in short-channel devices is predominantly dominated by a larger lateral electric field, resulting in significantly fewer interface traps. Moreover, interface traps in short-channel devices no longer accumulate near the drain side, as observed in long-channel devices, but extend towards the source, distributed across the entire channel.

关键词： Degradation integrated circuits Temperature distribution Logic gates Silicon Nanoscale devices Electric fields integrated circuit reliability Stress Passivation

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Enhanced Robustness of Interfacial Layer (IL) for PBTI Improvement of HfO2/TiN RMG Stacks by Low-Temperature Oxygen Plasma Treatment

Enhanced Robustness of Interfacial Layer (IL) for PBTI Impro...

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International Symposium on Physical & Failure Analysis of integrated Circuits

作者： Songyi Jiang Qianqian Liu Mingyang Sun Hong Yang Junjie Li Bo Tang Xiaobin He Shuai Yang Jun Luo Wenwu Wang Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics Chinese Academy of Science Beijing China Microelectronics Institute University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350360608

ISBN: (纸本)9798350360615

In this paper, in order to enhance the quality of SiO 2 chemical interfacial layer (IL) and get better PBTI characteristics of devices with HfO 2 /TiN stacks, the atom oxygen (O*) plasma treatment after IL growth is applied at low temperature (250°C) for 10 seconds. The experimental results show that equivalent oxide thickness (EOT) is increased about 0.12nm by O* plasma treatment, which is due to the SiO 2 IL re-growth according to the TEM image and relationship between leakage (LKG) and EOT. The initial interface trap of device decreases about 60%, while the generated interface trap in PBTI at 125°C is obviously decreased, which is due to the increase of hydrogen in the interface between IL and silicon as shown in Secondary ion mass spectrometry (SIMS) data. The stress-induced leakage current (SILC) shows that the energy level of generated oxide trap in HfO 2 by O* plasma treatment shifts to Ev of silicon about 0.04eV due to the nitrogen passivation in the oxide. This work gives a clue to improve the IL quality and PBTI using low-temperature thermal budget.

关键词： Silicon compounds Atomic layer deposition Hydrogen Voltage Silicon Plasmas Hafnium compounds

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Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW Resonator on Flexible Polyimide Substrate

Fabrication of Y-cut LiNbO3 Single Crystalline Film and SAW ...

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2024 IEEE International Conference on integrated Circuits, Technologies and Applications, ICTA 2024

作者： Gao, Yizhuo Luo, Wenbo Huang, Shitian Fan, Wei Zhu, Dailei Wang, Xu Pan, Xinqiang Shuai, Yao Wu, Chuangui Zhang, Wanli University of Electronic Science and Technology of China School of Integrated Circuit Science and Engineering Chengdu610054 China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing401332 China

ISBN: (纸本)9798331530709

Flexible surface acoustic wave (SAW) resonators on single crystal LiNbO3(LN) film have been successfully fabricated using benzocyclobutene bonding and crystal ion slicing technology. The effects of Polyimide (PI) thickness on the properties of LN film have been studied. 960 nm LN single crystal films without cracks have been transferred to 25 μ ∼m PI substrates, which are used to construct flexible SAW resonators. The flexible SAW resonators show well frequency-strain response characteristics. These results demonstrated that LN single crystal film on PI substrate and its SAW resonator is a promising candidate in flexible electronic devices. © 2024 IEEE.

关键词： Saws

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