The Zr2Al4C5 ceramic was successfully fabricated by the spark plasma sintering at 1800°C for 10 min under uniaxial 20 MPa pressure in vacuum using a mixed raw materials of Zr, Al, Si and graphite powders. The X-r...
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The original HTML version of this Article omitted to list Zhengcao Li as a corresponding author. Correspondingly, the original PDF version of this Article incorrectly stated that 'Correspondence and requests for m...
The original HTML version of this Article omitted to list Zhengcao Li as a corresponding author. Correspondingly, the original PDF version of this Article incorrectly stated that 'Correspondence and requests for materials should be addressed to M.W. (email: ***@***)', instead of the correct 'Correspondence and requests for materials should be addressed to Z.L. (email: zcli@***) or to M.W. (email: ***@***)'. This has been corrected in both the PDF and HTML versions of the Article.
C/C composite material is widely used in aerospace field and others, however, it is easy to be oxidized at high *** order to improve the oxidation resistance, ZrC is introduced as an oxidation inhibitor used in matrix...
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C/C composite material is widely used in aerospace field and others, however, it is easy to be oxidized at high *** order to improve the oxidation resistance, ZrC is introduced as an oxidation inhibitor used in matrix modification of C/C composite material. Flat plate samples of ZrC/C composite materials were prepared by hot-pressing sintering. The degree of graphitization increases with rising sintering temperature, and layer structure of carbon matrix is observed clearly in the sample treated at 2273 K. Diffusion behavior of Zr in C matrix at high temperature is studied, which can be generally expressed as D=3.382×10?11 exp[2.029×105/(RT)]. The diffusion of Zr in C matrix leads to the over-saturation of C in the micro area and the oversaturated C precipitates as graphite. This continuous process promotes the transformation of carbon to graphite.
High quality nano-sized zirconium carbide (ZrC) powders were successfully fabricated via a developed chemical active dilution self-propagating high-temperature synthesis (SHS) method assisted by ball milling pretr...
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High quality nano-sized zirconium carbide (ZrC) powders were successfully fabricated via a developed chemical active dilution self-propagating high-temperature synthesis (SHS) method assisted by ball milling pretreatment process using traditional cheap zirconium dioxide powder (ZrO2), magnesium powder (Mg) and sucrose (C12H22Oll) as raw materials. FSEM, TEM, HRTEM, SAED, XRD, FTIR and Raman, ICP- AES, laser particle size analyzer, oxygen and nitrogen analyzer, carbon/sulfur determinator and TG-DSC were employed for the characterization of the morphology, structure, chemical composition and thermal stability of the as-synthesized ZrC samples. The as-synthesized samples demonstrated high purity, low oxygen content and evenly distributed ZrC nano-powders with an average particle size of 50nm. In addition, the effects of endothermic rate and the possible chemical reaction mechanism were also discussed.
Doping bismuth selenide (Bi2Se3) with elements such as copper and strontium (Sr) can induce superconductivity, making the doped materials interesting candidates to explore potential topological superconducting behavio...
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Doping bismuth selenide (Bi2Se3) with elements such as copper and strontium (Sr) can induce superconductivity, making the doped materials interesting candidates to explore potential topological superconducting behaviors. It was thought that the superconductivity of doped Bi2Se3 was induced by dopant atoms intercalated in van der Waals gaps. However, several experiments have shown that the intercalation of dopant atoms may not necessarily make doped Bi2Se3 superconducting. Thus, the structural origin of superconductivity in doped Bi2Se3 remains an open question. Herein, we combined material synthesis and characterization, high-resolution transmission electron microscopy, and first-principles calculations to study the doping structure of Sr-doped Bi2Se3. We found that the emergence of superconductivity is strongly related with n-type dopant atoms. Atomic-level energy-dispersive x-ray mapping revealed various n-type Sr dopants that occupy intercalated and interstitial positions. First-principles calculations showed that the formation energy of a specific interstitial Sr doping position depends strongly on the Sr doping level. This site changes from a metastable position at low Sr doping level to a stable position at high Sr doping level. The calculation results explain why quenching is necessary to obtain superconducting samples when the Sr doping level is low and also why slow furnace cooling can yield superconducting samples when the Sr doping level is high. Our findings suggest that Sr atoms doped at interstitial locations, instead of those intercalated in van der Waals gaps, are most likely to be responsible for the emergence of superconductivity in Sr-doped Bi2Se3.
The complexity of strongly correlated electron physics in vanadium dioxide is exemplified as its rich phase diagrams of all kinds, which in turn shed light on the mechanisms behind its various phase transitions. In th...
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