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Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors

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Science China(Information Sciences) 2023年第2期66卷 227-236页

作者： Guodong QI Xinyu CHEN Guangxi HU Peng ZHOU Wenzhong BAO Ye LU State Key Laboratory of ASIC and System School of Information Science and TechnologyFudan University State Key Laboratory of ASIC and System School of Microelectronics Fudan University Zhangjiang Fudan International Innovation Center Fudan University

As the traditional scaling of silicon metal-oxide-semiconductor field-effect transistors（MOSFETs） reaches its physical limit, research efforts on novel semiconductor devices are increasingly desired. To enable the joint optimization of early-stage circuit design and process of novel devices, the rapid creation of an accurate compact model of these devices with the capability to cover process variations is required. In this work, a knowledge-based neural network（KNN） modeling method is proposed. This method separates the geometrical variables from the other input variables of the device, where the geometrical variables are modeled with physics-based analytical equations, while the remaining part is modeled by an artificial neural network. The KNN model takes advantage of the automated numerical fitting capability of the neural network and the geometrical scalability from device physics. The created KNN model is first validated with silicon MOSFET data from the industry standard BSIM6 and shows more than 20% accuracy improvement as compared with the traditional neural network model. Furthermore, MoS2field-effect transistors and circuits,such as ring oscillators, standard cells, and logic functional circuits, are experimentally fabricated for model verification. The results show that the KNN model is capable of predicting the electrical characteristics of devices beyond the measurement geometry and facilitates the accurate simulations of statistical circuits with respect to experimental data. This work paves the way for future circuit designs and simulations of novel semiconductor devices.

关键词： knowledge-based neural network MOSFET 2D material FETs Monte Carlo simulations circuit benchmark

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FSS: algorithm and neural network accelerator for style transfer

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Science China(Information Sciences) 2024年第2期67卷 253-266页

作者： Yi LING Yujie HUANG Yujie CAI Zhaojie LI Mingyu WANG Wenhong LI Xiaoyang ZENG State Key Laboratory of ASIC & System Fudan University Shanghai Explore X Technology Co. Ltd.

Neural networks(NNs), owing to their impressive performance, have gradually begun to dominate multimedia processing. For resource-constrained and energy-sensitive mobile devices, an efficient NN accelerator is necessary. Style transfer is an important multimedia application. However, existing arbitrary style transfer networks are complex and not well supported by current NN accelerators, limiting their application on mobile devices. Moreover, the quality of style transfer needs improvement. Thus, we design the Fast Style system(FSS), where a novel algorithm and an NN accelerator are proposed for style transfer. In FSS, we first propose a novel arbitrary style transfer algorithm, Fast Style. We propose a light network that contributes to high quality and low computational complexity and a prior mechanism to avoid retraining when the style changes. Then, we redesign an NN accelerator for Fast Style by applying two improvements to the basic NVIDIA deep learning accelerator(NVDLA) architecture. First, a flexible dat FSM and wt FSM are redesigned to enable the original data path to perform other operations(including the GRAM operation)by software programming. Moreover, statistics and judgment logic are designed to utilize the continuity of a video stream and remove the data dependency in the instance normalization, which improves the accelerator performance by 18.6%. The experimental results demonstrate that the proposed Fast Style can achieve higher quality with a lower computational cost, making it more suitable for mobile devices. The proposed NN accelerator is implemented on the Xilinx VCU118 FPGA under a 180-MHz clock. Experimental results show that the accelerator can stylize 512×512-pixel video with 20 FPS, and the measured performance reaches up to 306.07 GOPS. The asic implementation in TSMC 28 nm achieves about 22 FPS in the case of a 720-p video.

关键词： neural network accelerator style transfer neural network deep learning

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A Ferroelectric Domain-Wall Transistor

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Chinese Physics Letters 2023年第3期40卷 82-86页

作者：欧阳俊孙杰李一鸣江安全 State Key Laboratory of ASIC&System School of MicroelectronicsFudan UniversityShanghai 200433China

On the basis of novel properties of ferroelectric conducting domain walls,the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density,high-speed and energy-efficient *** in-memory computing,three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently ***,a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O_(3)thin *** the logic function,the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source *** the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations,providing an innovative approach for the development of the domain wall nanoelectronics.

关键词： drain walls ferroelectric

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Ferroelectric domain wall memory

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Chinese Physics B 2023年第12期32卷 14-20页

作者：李一鸣孙杰江安全 State Key Laboratory of ASIC&System School of MicroelectronicsFudan UniversityShanghai 200433China

Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations,and can be repetitively created,erased,and moved during programming into different logic states for the nonvolatile memory under an applied electric field,providing a new paradigm for highly miniaturized low-energy electronic *** some specific conditions,the charged domain walls are conducting,differing from their insulating bulk *** the past decade,the emergence of atomic-layer scaling solid-state electronic devices is such demonstration,resulting in the rapid rise of domain wall *** review aims to the latest development of ferroelectric domain-wall memories with the presence of the challenges and opportunities and the roadmap to their future commercialization.

关键词： domain wall memory ferroelectric

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Experimental demonstration of 220-GHz terahertz signals wireless transmission over 4.6 km

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Science China(Information Sciences) 2025年第1期68卷 386-388页

作者： Yi WEI Jianjun YU Mingxu WANG Xiongwei YANG Qiutong ZHANG Jingwen TAN Bing ZHANG Ying WU Yang HAN Peng TIAN Wen ZHOU Kaihui WANG Feng ZHAO State Key Laboratory of ASIC and System Key Laboratory for Information Science of Electromagnetic Waves (MoE)School of Information Science and Technology Fudan University School of Electronic Engineering Xi'an University of Posts and Telecommunications

The advancement of terahertz (THz) communication technology drives the evolution of wireless communication systems,offering novel pathways and technical means for the development of future 6G communication *** wireless communication systems are often constrained by bandwidth limitations of electronic devices in high frequency ***,THz communication technology leverages the characteristics of electromagnetic waves to transcend these limitations,enabling communication athigher frequencies and wider bandwidths.

关键词： wireless terahertz over demonstration experimental signals transmission

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An Adaptive Threshold Analog Front-End Circuit for Direct ToF LiDAR 17

An Adaptive Threshold Analog Front-End Circuit for Direct To...

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17th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2024

作者： Guo, Jianping Zeng, Xiaoyang Li, Wenhong Wang, Mingyu Fudan University State-key Laboratory of ASIC and system Shanghai201203 China

ISBN: (纸本)9798350361834

The analog front-end (AFE) circuit of the light detection and ranging (LiDAR) receivers need to provide time-of-flight (ToF) when the laser echo arrives. Accurate ToF is crucial for the ranging accuracy of LiDAR receivers. However, targets with different reflectivity will give different timing results even at the same distance due to the light intensity. This paper proposes an AFE circuit for LiDAR receiver. This AFE circuit can adaptively adjust the threshold based on photocurrent to reduce walk error under different light intensities. Proposed AFE is implemented in 55nm CMOS process. Simulation results show that within the photocurrent range of 3 to 20 uA, the timing error is less than 0.8 ns. © 2024 IEEE.

关键词： Avalanche diodes

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Multi-Sampling Mode CDAC Design for a 12-Bit 200MS/s Pipelined-SAR ADC 17

Multi-Sampling Mode CDAC Design for a 12-Bit 200MS/s Pipelin...

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17th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2024

作者： Zhang, Tianyu Ye, Fan Ma, Shunli Fudan University State-key Laboratory of ASIC and System Shanghai200433 China

ISBN: (纸本)9798350361834

This paper proposes a multi-sampling mode capacitor DAC (CDAC) for a 12-bit 200MS/s pipelined-SAR ADC, addressing the issue of overfitting in neural network-based calibrations. By implementing normal, offset, and proportional sampling modes, the design ensures the linearity of the ADC's transfer function. The proposed CDAC utilizes a bottom-plate sampling method and a high-linearity bootstrap circuit. Simulation results demonstrate that the proposed ADC achieves an SFDR of around 75dB and an ENOB of approximately 10.8bits across all sampling modes, validating the effectiveness of the design in enhancing ADC performance. © 2024 IEEE.

关键词： Printed circuit boards

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Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit

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Nano Research 2023年第1期16卷 1252-1258页

作者： Zhe Sheng Yue Wang Wennan Hu Haoran Sun Jianguo Dong Rui Yu David Wei Zhang Peng Zhou Zengxing Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center Shanghai 201203China

The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications,e.g.,PN junctions for rectifier ***,current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load,which are not conductive to voltage output and large-scale *** we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit,which include two symmetric back-to-back black phosphorus(BP)/hexagonal boron nitride(h-BN)/graphene heterostructured semi-gate field-effect transistors(FETs)and perform complementary NP and PN junction like complementary metal-oxide-semiconductor(CMOS)*** investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability,and can process alternating current(AC)signals with the frequency prior 1 KHz and reconfiguration speed up to 25μ*** also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs *** complementary configuration here should be of low output impedance and low static power consumption,being beneficial for effective voltage output and large-scale integration.

关键词： two-dimensional(2D)material PN junction rectifier circuit complementary configuration

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A field-effect WSe_(2)/Si heterojunction diode

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Chinese Physics B 2023年第1期32卷 592-597页

作者：余睿盛喆胡文楠王越董建国孙浩然程增光张增星 State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center Shanghai 201203China

It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.

关键词： two-dimensional material ambipolar semiconductor field-effect transistor optoelectronic device

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Proton antagonist membrane towards exclusive CO_(2)reduction

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Nano Research 2023年第4期16卷 4589-4595页

作者： Taishi Xiao Yao Ma Shicheng Zeng Xiang Yao Tong Ye Hongbin Li Wei Li Zhengzong Sun Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials Fudan UniversityShanghai 200433China School of Microelectronics and State Key Laboratory of ASIC and System Fudan UniversityShanghai 200433China

Membrane electrode assembly reactor offers great promise toward practical CO_(2)***,traditional proton exchange membrane possesses strong acidic chemical environment,which facilitates undesired hydrogen evolution *** we report a proton antagonist strategy,through which the proton diffusion pathways have been severely impeded by Na+cation to produce an alkaline-rich *** this new membrane electrode assembly,we can significantly suppress the hydrogen evolution and achieve a Faradaic efficiency of 95.7%for CO with 51.5%energy *** addition,our proton antagonist membrane outperforms the commercial anion exchange membrane in both conductivity and oxidation resistance lifetime,which are crucial for large scale electrolysis of carbon neutral chemicals.

关键词： CO_(2)reduction proton antagonist membrane electrode assembly

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