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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Chen, Chao Li, Yan Cheng, Xu Han, Jun Zeng, Xiaoyang Fudan University State Key Laboratory of Asic and System Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

Soft error has been a major reliability issue in advanced technology nodes. Mitigating soft error rate (SER) will bring great area and power overhead inevitably. This paper makes several improvements to a multi-objective optimization framework based on Bayesian optimization. A scheme incorporating Affinity Propagation (AP) and a novel sorting algorithm is proposed to cluster and sort the flip-flops (FFs), which ensures that the framework is suitable for large-scale circuit design. Results show that the scheme proposed in this paper performs better than the reference work. By employing the framework on multiplier hardening designs, a 78.3% reduction in SER is achieved with an acceptable increase in area and power consumption. © 2022 IEEE.

关键词： Multiobjective optimization

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A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS

A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type T...

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作者： Zhang, Jincheng Wang, Yujia Chen, Yong Ren, Junyan Ma, Shunli Fudan University State Key Laboratory of Asic and System Shanghai200433 China University of Macau State-Key Laboratory of Analog and Mixed-Signal Vlsi and IME/ECE-FST China

This article presents a high-power wideband power amplifier (PA) with a four-way power-combining technique for $D$ -band high-resolution radar. The power combiner is based on a two-section Chebyshev impedance converter to achieve a large bandwidth (BW) and is realized with slow wave coplanar waveguides (S-CPWs) to reduce the insertion loss and chip area. Therefore, our developed technique can provide broadband and low-loss power-combining scheme in a very compact size. A high-power PA with four-way combining has been fabricated in a 28-nm CMOS bulk technology. The unit PA uses low- $k$ transformer-based coupled-resonator networks to realize wideband matching. The measured results of the PA prototype demonstrate the peak gain of 22.6 dB, the saturated output power of 16.2 dBm, and the peak power added efficiency of 8.6% at 135 GHz with a 3-dB BW of 28 GHz from 124 to 152 GHz. Meanwhile, the total area of this PA die is merely 0.66 $\times $ 0.73 mm. © 1963-2012 IEEE.

关键词： Power amplifiers

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A 23-33GHz Transmitter in 65-nm CMOS Achieving 22.8-dB Gain and 14.5dBm Psat for 5G Communication system 16

A 23-33GHz Transmitter in 65-nm CMOS Achieving 22.8-dB Gain ...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Zeng, Chaofan Chen, Xu Xu, Nuo Song, Xinlei Shen, Chao Ma, Shunli Fudan University State Key Laboratory of Asic and System Shanghai201203 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This paper presents a transmitter applied to 5G cellular communication that operates from 23 GHz to 33GHz with the saturated output power of 14.5dBm. The transmitter with a two-stage power amplifier has the power gain over 22dB. The power amplifier is designed in a differential type with cross-coupled neutralized capacitors for stability and reverse-isolation improvement. Three transformers featuring different resonant frequencies are used to extend the bandwidth and ensure adequate output power. The on-chip transformer results in a high coupling factor to minimize the insertion loss. An interstage matching network between a mixer and a drive amplifier induces a channel flatness characteristic. With the power consumption of 112mW, the transmitter can reach the OP1dB of 6.2dBm. The designed transmitter is fabricated using a 65nm CMOS process and the chip size including pads and decoupling capacitors is 0.45mm× 1.18mm. © 2022 IEEE.

关键词： Transmitters

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A 10-bit 1MSPS SAR Quantizer with Differential Charge Compensation for 2Vp-p Signal Range 16

A 10-bit 1MSPS SAR Quantizer with Differential Charge Compen...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Yuan, Zhu Wei, Tingting Hong, Zhiliang Fudan University State Key Laboratory of Asic & System Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

A low power successive approximation register (SAR) quantizer with differential charge compensation is presented. Asynchronous logic and top-plate sampling are adopted to achieve a low-power design. A differential charge compensation technique is proposed to eliminate the intrinsic signal range loss introduced by the top-plate sampling. The presented SAR quantizer outputs 10-bit digital results by 1MS/s under the power supply of 1.2V, consuming 35uW. The post-simulation results show the signal range is full as 2Vp-p and peak SNDR of 60.11dB, resulting in a figure of merit (FoM) of 42 fJ/conversion-step. This design is using 180-nm CMOS technology and the core area is about 0.0944mm2. © 2022 IEEE.

关键词： Electric power supplies to apparatus

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Access Your Tesla without Your Awareness: Compromising keyless Entry system of Model 3 30

Access Your Tesla without Your Awareness: Compromising Keyle...

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30th Annual Network and Distributed system Security Symposium, NDSS 2023

作者： Xie, Xinyi Jiang, Kun Dai, Rui Lu, Jun Wang, Lihui Li, Qing Yu, Jun Shanghai Fudan Microelectronics Group Co. Ltd China State Key Laboratory of ASIC & System Fudan University China

ISBN: (纸本)1891562835

Tesla Model 3 has equipped with Phone keys and key Cards in addition to traditional key fobs for better driving experiences. These new features allow a driver to enter and start the vehicle without using a mechanical key through a wireless authentication process between the vehicle and the key. Unlike the requirements of swiping against the car for key Cards, the Tesla mobile app’s Phone key feature can unlock a Model 3 while your smartphone is still in a pocket or bag. In this paper, we performed a detailed security analysis aiming at Tesla keys, especially for key Cards and Phone keys. Starting with reverse engineering the mobile application and sniffing the communication data, we reestablished pairing and authentication protocols and analyzed their potential issues. Missing the certificate verification allows an unofficial key Card to work as an official one. Using these third-party products may lead to serious security problems. Also, the weaknesses of the current protocol lead to a man-in-the-middle (MitM) attack through a Bluetooth channel. The MitM attack is an improved relay attack breaking the security of the authentication procedures for Phone keys. We also developed an App named TESmLA installed on customized Android devices to complete the proof-of-concept. The attackers can break into Tesla Model 3 and drive it away without the awareness of the car owner. Our results bring into question the security of Passive keyless Entry and Start (PKES) and Bluetooth implementations in security-critical applications. To mitigate the security problems, we discussed the corresponding countermeasures and feasible secure scheme in the future. © 2023 30th Annual Network and Distributed system Security Symposium, NDSS 2023. All Rights Reserved.

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A Controllable Luminance Neural Camera 16

A Controllable Luminance Neural Camera

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Xu, Fa Huang, Yujie Zeng, Xiaoyang Jing, Ming'e Fan, Yibo Fudan University State Key Laboratory of Asic & System Shanghai200433 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

The image signal processing (ISP) pipeline reconstructs compelling RGB images from raw images. Recently, deep neural networks have been proposed to replace conventional divide-and-conquer ISP pipeline solutions. But previous methods cannot control the luminance level necessary for the camera system and suffer from severe color distortion in output images. In this paper, we propose a controllable luminance neural camera based on a convolutional neural network (CNN). Experiments show that our method can achieve flexibility in adjusting luminance levels and higher fidelity in restoring color. © 2022 IEEE.

关键词： Luminance

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Robustness Enhancement Technique and Fine-Tuning Technique of IIP3 for Wideband LNTA 9

Robustness Enhancement Technique and Fine-Tuning Technique o...

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9th IEEE MTT-S International Wireless Symposium, IWS 2022

作者： Tao, Cong Lei, Liangbo Chen, Zhipeng Hong, Zhiliang Huang, Yumei Fudan University State Key Laboratory of Asic and System Shanghai200433 China

ISBN: (数字)9781665481977

ISBN: (纸本)9781665481977

Wideband low noise transconductance amplifier(LNTA) is an essential part of current-mode SAW-less receivers, and its linearity design is the most challenging. Many low noise amplifier(LNA) linearization techniques(LT) are also applicable to LNTA, such as the famous derivative superposition(DS) and post-distortion(PD). But these techniques are not robust and are prone to failure. This paper is based on a noise canceling(NC) LNTA prototype and improves its performance in several aspects with some unique analysis. The robustness of the IIP3 of the original LNTA is enhanced by using a self-biasing network. By changing the connection of the DS MOSFETs, the sensitivity of the IIP3 to the load resistance is reduced. Finally, by adopting PD as a fine-tuning technique in the right place, the IIP3 of the LNTA is improved to more than 20dBm. © 2022 IEEE.

关键词： Low noise amplifiers

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A Branch-Gain-Balanced LNA Based on Voltage- Controlled Resistor Feedback and Shared CMFB Amplifier 65

A Branch-Gain-Balanced LNA Based on Voltage- Controlled Resi...

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65th IEEE International Midwest Symposium on Circuits and systems, MWSCAS 2022

作者： Liu, Lulu Wu, Yimin Yu, Xinwei Ye, Fan Ren, Junyan Fudan University State Key Laboratory of ASIC and System Shanghai200433 China

ISBN: (数字)9781665402798

ISBN: (纸本)9781665402798

The low-noise amplifier (LNA) determines the noise performance and linearity of the ultrasound imaging system. However, due to the characteristics of the ultrasound system, the LNA is single-ended input and double-ended output which can lead to unbalanced branch gains. To address this issue, a negative feedback mechanism based on voltage-controlled resistor and shared common-mode feedback (CMFB) amplifier is proposed to make the gains at the two branches of the LNA equal and resistant to PVT fluctuations. Test results show LNA's equivalent input-referred noise voltage density is 1.37 \mathrm{nV} / \sqrt{} \mathrm{Hz} at 5MHz, and the -3dB bandwidth is 200MHz. The proposed negative feedback mechanism optimizes the gain difference between VON and VOP at the frequency of 5MHz from 2.3dB to 0.5dB. © 2022 IEEE.

关键词： Low noise amplifiers

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Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections:Current status and perspectives

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InfoMat 2023年第10期5卷 1-31页

作者： Weijie Liu Yiye Yu Meng Peng Zhihua Zheng Pengcheng Jian Yang Wang Yuanchen Zou Yongming Zhao Fang Wang Feng Wu Changqing Chen Jiangnan Dai Peng Wang Weida Hu Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhanthe People's Republic of China State Key Laboratory of Infrared Science and Technology Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithePeople's Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaithe People's Republic of China

In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption coeffi-cient,large specific surface area,and so *** the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commerciali-zation of pure 2DLMs-based ***,the material growth and device fabrication technologies of three-dimensional(3D)semiconductors photodetectors tend to be gradually ***,the further improvement of the photodetection performance is limited by the difficult heterogeneous inte-gration or the inferior crystal quality via ***,2D/3D van der Waals heterostructures(vdWH)combine the advantages of the two types of materials simultaneously,which may provide a new platform for developing high-performance optoelectronic ***,we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories,working mechanisms,and the typical fabrication methods of 2D/3D vdWH ***,we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials,including Si,Ge,GaAs,AlGaN,SiC,and so ***,we highlight the current challenges and pros-pects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.

关键词： photodetectors three-dimensional semiconductors two-dimensional layered materials vander Waals heterostructures

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A 31.2dBm Pout, 40.7% Peak DE, 2.4GHz Quadrature Doherty Power Amplifier Based on Current Mode RFDAC Architecture 16

A 31.2dBm Pout, 40.7% Peak DE, 2.4GHz Quadrature Doherty Pow...

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16th IEEE International Conference on Solid-state and Integrated Circuit Technology, ICSICT 2022

作者： Shi, Ling-Yun Wang, Tao Hua, Di Hong, Zhi-Liang Fudan University State Key Laboratory of Asic & System Shanghai201203 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

A fully integrated quadrature radio frequency power amplifier based on current mode RFDAC architecture is presented. With the assistance of Doherty technology, its drain efficiency (DE) at 6dB power back-off (PBO) is enhanced. Designed in a 28nm CMOS process, the simulation results show that its peak output power and peak DE reaches 31.2dBm and 40.7% under 2.4GHz, respectively. Meanwhile, it can maintain less than 0.14dB AM-AM and less than 5.7° AM-PM throughout its whole operation without digital predistortion (DPD), the DE at 6dB PBO of this power amplifier is 40.4%. © 2022 IEEE.

关键词： Doherty amplifiers

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