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检索条件"机构=State key lab oratory of Advanced Technology for Material Synthesis and Processing"
68 条 记 录,以下是51-60 订阅
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Microstructure and Properties of AlN Coating/Graphite Fabricated via In-situ Reaction
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武汉理工大学学报(材料科学版) 2007年 第4期22卷 718-721页
作者: JIA Tiekun WANG Weimin FU Zhengyi WANG Hao ZHAO Haiyang State Key Lab of Advanced Technology for Material Synthesis and Processing Wuhan University of Technology Wuhan430070 China
A novel method was used to fabricate AIN coating on graphite substrate. This approach included two steps: firstly, the emulsion composed of BN and anhydrous ethanol was sprayed on the surface of the graphite substrate... 详细信息
来源: 评论
Modeling and simulation of PEM fuel cell based on electrochemical model
Wuhan Ligong Daxue Xuebao (Jiaotong Kexue Yu Gongcheng Ban)/...
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Wuhan Ligong Daxue Xuebao (Jiaotong Kexue Yu Gongcheng Ban)/Journal of Wuhan University of technology (Transportation Science and Engineering) 2008年 第5期32卷 933-936页
作者: Xu, Lamei Xiao, Jinsheng Pan, Mu Yuan, Runzhang State Key Lab of Advanced Technology for Material Synthesis and Processing Wuhan University of Technology Wuhan 430070 China School of Automation Wuhan University of Technology Wuhan 430070 China School of Automobile Wuhan University of Technology Wuhan 430070 China
Based on the electrochemical model, a simulation model has been developed with Matlab/Simulink. Steady-state analysis has been developed to evaluate how the temperature affect the voltage and output power of the fuel ... 详细信息
来源: 评论
Microstructure and resistivity of iridium oxide thin films by pulsed laser deposition technique
Microstructure and resistivity of iridium oxide thin films b...
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作者: Zhang, L.M. Gong, Y.S. Wang, C.B. Shen, Q. State Key Lab. of Advanced Technology for Material Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the stru... 详细信息
来源: 评论
Growth and properties of pulsed laser deposited K3Li2Nb5O15 thin films
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key Engineering materials 2007年 351卷 184-188页
作者: Zhan, Zusheng Gong, Yansheng Shen, Qiang Zhang, Lianmeng State Key Lab. of Advanced Technology for Material Synthesis and Processing Wuhan University of Technology Wuhan 430070 China School of Materials Science and Chemical Engineering China University of Geosciences Hubei Wuhan 430074 China
Potassium lithium niobate (KLN: K3Li2Nb5O15) films have been deposited on quartz glass by Pulsed laser deposition (PLD) technique using a stoichiometric KLN target as starting materials. By investigating the effects o... 详细信息
来源: 评论
An investigation of the reaction hot-pressing synthesis of MoSi 2/Ti3SiC2/Al composites
An investigation of the reaction hot-pressing synthesis of M...
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作者: Zhang, J.Y. Fu, Z.Y. Wang, W.M. State Key Lab. of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
MoSi2 is one of the few intermetallics to have potential for farther systems. However, the use of MoSi2 has been hindered due to the brittle nature of the material at low temperatures, inadequate creep resistance at h... 详细信息
来源: 评论
Microstructure and Properties of A IN Coating/Graphite Fabricated via In-situ Reaction
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Journal of Wuhan University of technology(materials Science) 2007年 第4期22卷 718-721页
作者: 贾铁昆 State Key Lab of Advanced Technology for Material Synthesis and Processing Wuhan University of Technology
A novel method was used to fabricate AlN coating on graphite substrate. This approach included two steps: firstly, the emulsion composed of BN and anhydrous ethanol was sprayed on the surface of the graphite substrat... 详细信息
来源: 评论
Influence factors analysis for fabrication of silicon nitride whisker by thermal decomposition of Si(NH)2
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Wuhan Ligong Daxue Xuebao/Journal of Wuhan University of technology 2007年 第2期29卷 8-11页
作者: Bi, Yu-Hui Chen, Fei Li, Jun Zhang, Dong-Ming Zhang, Lian-Meng State Key Lab. of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
In the present study, Si2N4 whisker was prepared by thermal decomposition of Si(NH)2, the experimental principles and process were described in detail. Influence factors such as temperature, residual carbon(C), a smal... 详细信息
来源: 评论
Research on the curing reaction heat resistance of ATPU/epoxy resin system
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Wuhan Ligong Daxue Xuebao/Journal of Wuhan University of technology 2007年 第1期29卷 37-39页
作者: Chen, Wen-Yi Guan, Jian-Guo Center for Material Research and Analysis Wuhan University of Technology Wuhan 430070 China State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
Thermogravimetry (TG-DTA) was used to study the heat resistance characteristics and curing heat decomposition kinetics of ATPU/epoxy resin system. Results showed that the decomposition temperature of the cured ATPU-2/... 详细信息
来源: 评论
synthesis of Ti2AlC by hot pressing and thermodynamics analysis
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Wuhan Ligong Daxue Xuebao/Journal of Wuhan University of technology 2007年 第4期29卷 5-7页
作者: Wang, Ping Mei, Bing-Chu Hong, Xiao-Tin Zhu, Jiao-Qun Zhou, Wei-Bing Yan, Ming School of Sciences Wuhan University of Technology Wuhan 430070 China State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
Ti2AlC bulk material was synthesized by hot pressing using elemental powder mixture of Ti, Al and active carbon. X-ray diffraction (XRD) in different temperature of hot pressing was used to determine the phase composi... 详细信息
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Optimization of p-type Segmented Bi_2Te_3/CoSb_3 Thermoelectric material Prepared by Spark Plasma Sintering
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Journal of Wuhan University of technology(materials Science) 2006年 第4期21卷 126-129页
作者: 王军 State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
A kind of p-type segmented Bi2 Te3/CoSB3 thermoetectric material was preparea oy sparse ptasma sintering( SPS ) . When the segmented materials were used at the temperature ranging from 300 K to 800 K, the junction t... 详细信息
来源: 评论