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2024 IEEE Asian Solid-state Circuits Conference, A-SSCC 2024

作者： Xing, Kai Zhu, Yan Martins, Rui Paulo Chan, Chi-Hang State-Key Laboratory of Analog and Mixed Signal VLSI DECE FST University of Macau China

ISBN: (纸本)9798350376326

With the advent of WLAN technologies, over 320 MHz BW and > 65dB DR ADCs become indispensable to support newly developed WiFi standards. Three classic solutions can reach the said targets but involve various compromises (Fig. 1 top). CT MASH ADCs [1] rely on a relatively high OSR (7) as well as NS order to accommodate the adequate noise spectral density (NSD), limiting the energy efficiency. The CT pipeline (PIPE) ADC [2-3] obviates the feedback loop and its 1st stage energy effectively provides preliminary quantization, residue generation, amplification, and filtering. However, the backend CT quantization can be power-hungry [2] [4]. The DT NS pipeline ADC offers a low-power alternative [5] but loses the intrinsic anti-aliasing (AA) ability from its CT counterparts. This work hybridizes CT and DT NS PIPE, gaining the pros from the CT PIPE front-end and DT PIPE backend. Together with the Single amplifier biquad (SAB) - Residue Amplifying Filter (RAF) and NS TD-QTZ, the C/DT PIPE ADC demonstrates superior energy efficiency over CT MASH ADCs with 320MHz BW. © 2024 IEEE.

关键词： Anti-aliasing

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Rapid Discovery of Gas Response in Materials Via Density Functional Theory and Machine Learning

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Energy & Environmental Materials 2025年第1期8卷 164-172页

作者： Shasha Gao Yongchao Cheng Lu Chen Sheng Huang School of Materials Science and Physics China University of Mining and TechnologyXuzhou 221116China State-Key Laboratory of Analog and Mixed-Signal VLSI IMEUniversity of MacaoMacao 999078China

In this study,a framework for predicting the gas-sensitive properties of gas-sensitive materials by combining machine learning and density functional theory(DFT)has been *** framework rapidly predicts the gas response of materials by establishing relationships between multisource physical parameters and gas-sensitive *** order to prove its effectiveness,the perovskite Cs_(3)Cu_(2)I_(5) has been selected as the representative *** physical parameters before and after the adsorption of various gases have been calculated using DFT,and then a machine learning model has been trained based on these *** studies have shown that a single physical parameter alone is not enough to accurately predict the gas sensitivity of ***,a variety of physical parameters have been selected for machine learning,and the final machine learning model achieved 92%accuracy in predicting gas *** is important to note that although there have been no previous reports on the response of Cs_(3)Cu_(2)I_(5) to hydrogen sulfide,the resulting model predicts the gas response of H2S;it is subsequently confirmed *** method not only enhances the understanding of the gas sensing mechanism,but also has a universal nature,making it suitable for the development of various new gas-sensitive materials.

关键词： density functional theory gas-sensitive materials machine learning

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Characterization and Modeling of MOSFET Series Resistance Down to 4 K

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IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 2025年 13卷 297-302页

作者： Lin, Yuhuan Ma, Zhizhao Li, Shilong Wen, Tianyue Zhou, Yuxuan Su, Hao Zhou, Shenghua Lin, Longyang Li, Yida Chen, Kai Southern Univ Sci & Technol Sch Microelect Shenzhen 518055 Peoples R China Univ Macau State Key Lab Analog & Mixed Signal VLSI IME ECE FST Macau Macao Peoples R China

MOSFET parasitic series resistance (R-SD) is an important parameter when channel length scales down. This paper presents a systematic study of R-SD extracted from the mobility constant method down to 4 K. For the first time, the anomalous behavior of R-SD with temperature lowering is interpreted and modeled by combined effects of dopant freeze-out and mobility. Excellent fit between the standard N/P-MOSFET measurement data and this model for 40 nm bulk device from leading foundry is shown from 300 K to 4 K. In addition, R-SD change with width scaling combined with temperature effects is also discussed.

关键词： Resistance MOSFET circuits Logic gates MOSFET Semiconductor device modeling Junctions Electrical resistance measurement Cryogenics Conductivity Systematics Series resistance R-SD cryogenic extraction model

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An SC-Parallel-Inductor Hybrid Buck Converter With Reduced Inductor Voltage and Current

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IEEE JOURNAL OF SOLID-state CIRCUITS 2023年第6期58卷 1758-1768页

作者： Cai, Guigang Lu, Yan Martins, Rui P. Univ Macau Inst Microelect State Key Lab Analog & Mixed Signal VLSI Macau Peoples R China Univ Macau FST DECE Macau Peoples R China

This article presents a switched-capacitor (SC)parallel-inductor buck (CPL- Buck) converter with reduced inductor voltage and current. The proposed CPL-Buck converter reduces the voltage stress on the power inductor with a seriesconnected flying capacitor in one phase, alleviating the current stress with a parallel-connected SC path in both phases. Therefore, it effectively lowers the average inductor current as well as its ripple, allowing the utilization of a small-volume inductor to deliver a large output current. In addition, to cover a wide voltage conversion ratio (VCR) range, the proposed CPL-Buck is able to operate in either a sub-1/3X mode or a sub-1/2X mode. This work, fabricated in 65-nm CMOS, occupies an area of 2.72 mm(2). Measurement results show that the proposed CPL-Buck obtains a peak efficiency of 92.9% and a peak current density of 0.3 A/mm(2) with a power inductor as small as 1.6 x 0.8 x 0.8 mm(3), with an input range of 3-4.2 V, an output range of 0.6-1 V, and 1.2-A maximum output current.

关键词： Always-dual-path (ADP) buck converter dc-dc converter hybrid converter hybrid step-down converter reduced inductor current switched-capacitor (SC)

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A High-Efficiency Low-Cost Multi-Antenna Energy Harvesting System With Leakage Suppression

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IEEE JOURNAL OF SOLID-state CIRCUITS 2024年第9期59卷 2995-3007页

作者： Zhang, Zhaobo Zhan, Chenchang Zhao, Shuangxing Law, Man-Kay Southern Univ Sci & Technol Sch Microelect Shenzhen 518055 Peoples R China Univ Macau State Key Lab Analog & Mixed Signal VLSI IME & FST Macau Peoples R China

This article presents a multi-antenna RF energy harvester (MARFEH) with leakage suppression to achieve high output power and avoid the effects of interference and blind spots in the room, and all the RF rectifiers share only one buffering capacitor to achieve low cost. The proposed leakage-suppressed rectifier utilizing adaptive V-TH compensation (AVC) and an RF switch can achieve self-turned-off operation to prevent power leakage due to power imbalance among all the parallel-connected rectifiers. The RF harvester also exhibits maximum power point tracking (MPPT) and a 1.8-V regulated output through a boost dc-dc converter. The MPPT is realized by an optimized on-chip perturb and observe (P&O) controller and achieves sub-mu W system control power consumption. Meanwhile, MPPT is used to estimate the RF input power to drive the AVC circuit to improve rectifier efficiency and assist in leakage suppression. The chip prototype was designed in a 180-nm CMOS process and occupies an area of 0.89 mm(2). Using a single antenna with AVC and MPPT enabled, the proposed harvester achieves a power conversion efficiency (PCE) of about 37% and 38% at an input power of -10 and +4 dBm, respectively. The measured peak PCE is 44% at -0.3 dBm. Wireless tests show that the peak output power at different test conditions is significantly improved when the number of antennas increases from 1 to 2 and to 3. Furthermore, an accurate rectifier model is presented to significantly shorten the system simulation time of the rectifier-dc-dc two-stage topology.

关键词： Boost dc-dc converter cold start Internet of Things (IoT) maximum power point tracking (MPPT) multi-antenna RF energy harvesting

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A 600-V GaN Active Gate Driver with Level Shifter Common-Mode Noise Sensing for Built-in dV/dt Self-Adaptive Control 35

A 600-V GaN Active Gate Driver with Level Shifter Common-Mod...

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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

作者： Liu, Tianqi Martins, Rui P. Lu, Yan Institute of Microelectronics DECE/FST University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi 999078 China

ISBN: (纸本)9798350396829

This paper proposes a 600- V half-bridge GaN active gate driver with built-in dV/dt self-adaptive control utilizing a common-mode (CM) noise sensing and amplifying unit. The two 600- V LDMOS FETs existing in the conventional level shifter are used to sense the CM noises. When the dV/ dt rate is large enough, the sensed CM noises will be amplified and then rapidly provide a pull-down gate current for reducing the turn-on speed. As the dV/dt rate becomes smaller, the pull-down gate current will decrease adaptively, which achieving double peaks in the waveform of driving current. Compared to adding an extra high-voltage capacitor or LDMOS as a dV/dt sensor, this method has no additional area overhead and negligible control delay. At the same slew rate, we compare the low-side gate noises induced by Miller coupling at condition of either only RON or the proposed self-adaptive adjustments. It shows that the noise peak in VGL for self-adaptive control decreases 46% at VJN=300V and also the noise envelope becomes smaller due to the dV/dt adjustment, dramatically reducing the probability of shoot-through current in the half bridge. © 2023 IEEE.

关键词： Gallium nitride

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A 1-A Switching LDO With 40-mV Dropout Voltage and Fast DVS

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 2023年第9期70卷 3454-3458页

作者： Mao, Xiangyu Lu, Yan Martins, Rui P. Univ Macau Inst Microelect State Key Lab Analog & Mixed Signal VLSI Macau Peoples R China Univ Macau FST DECE Macau Peoples R China

This brief presents a 1-A fully-integrated switching LDO for digital loads. By using 4-phase 200-MHz pulse-width modulation (PWM), it can significantly reduce the output ripple and allow using a smaller output capacitor. Distinctive from the prior dual-loop structure, we adopt a single feedback loop with a wide bandwidth error amplifier (EA) using a quasi-TypeIII compensation to improve the dynamic voltage scaling (DVS) rate and to reduce the transient recovery time. Meanwhile, compared with the prior stacked power transistor architecture, the single-PMOS with auxiliary constant current (ACC) control can reduce by 4-fold the power transistor size, and decreases the driver current by at least 2.5 times. Fabricated in 28-nm bulk CMOS, the proposed LDO measures a 1-A load capability with a 40-mV dropout voltage. Moreover, the measured load regulation is 2.2 mV/A, and the line regulation is 1.8 mV/V. In addition, the regulator obtains a fast DVS speed of 4V/mu s and a fast load transient recovery time of <50ns.

关键词： Dynamic voltage scaling (DVS) low-dropout regulator (LDO) fully integrated voltage regulator (FIVR) type III compensation PWM control switching LDO

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Reactive oxygen species and nitric oxide scavenging nanoparticles alleviating rheumatoid arthritis through adjusting the seeds and growing soils

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Acta Pharmaceutica Sinica B 2023年第12期13卷 5016-5029页

作者： Peng Hua Ruifeng Liang Yanbei Tu Yuying Yin Man-Kay Law Meiwan Chen State Key Laboratory of Quality Research in Chinese Medicine Institute of Chinese Medical SciencesUniversity of MacaoMacao SARChina State Key Laboratory of Analog and Mixed-Signal VLSI IME and FST-ECEUniversity of MacaoMacao SARChina

Normalizing inflamed soils including reactive oxygen species(ROS),nitric oxide(NO),cellfree DNA,and regulating infammation-related seeds such as macrophages,neutrophils,fibroblasts,represent a promising strategy to maintain synovial tissue homeostasis for rheumatoid arthritis(RA)***,ROS scavenging amphiphilic block copolymer PEGylated bilirubin and NO-scavenging PEGylated o-phenylenediamine were fabricated to self-assemble into a dually responsive nanoparticle loaded with JAK inhibitor notopterol(Not@BR/oPDA-PEG,NBOP NPs).The simultaneous ROS and NO depletion combined with JAK-STAT pathway inhibition could not only promote M2 polarization to reduce further ROS and NO generation,but also decrease cytokines and chemokines to prevent immune cell ***,NBOP NPs responded to high level ROS and NO,and disintegrated to release notopterol in inflamed joints as the hydrophobic heads BR and oPDA were transformed into hydrophilic *** released notopterol could inhibit the JAK-STAT pathway of infammatory cells to reduce the secretion of pro-inflammatory cytokines and *** strategy represented an effective way to regulate RA soils and seeds through breaking the positive feedback loop of inflammation aggravation,achieving an excellent anti-RA efficacy in a collagen-induced arthritis rat *** together,our work offered a reference to adjust RA soils and seeds for enhanced RA treatment.

关键词： Bilirubin o-Phenylenediamine Notopterol ROS and NO scavenging JAK-STATpathway Anti-inflammatory Cartilage protection Rheumatoid arthritis

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A Double Pulse Overlapping Laser Diode Driver With Minimum 100-ps Pulse for LiDAR System

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IEEE JOURNAL OF SOLID-state CIRCUITS 2025年第2期60卷 555-567页

作者： Tong, Zhiguo Huang, Junwei Mao, Xiangyu Martins, Rui P. Lu, Yan Univ Macau Inst Microelect State Key Lab Analog & Mixed Signal VLSI Macau Peoples R China Univ Macau FST DECE Macau Peoples R China Tsinghua Univ Dept Elect Engn Beijing 100084 Peoples R China

Light detection and ranging (LiDAR) technology is widely spreading to many applications. Among the various ranging methods, direct time of flight (dToF) stands out as particularly promising for real-time and long-range applications. However, the detection resolution and range of dToF LiDAR systems depend on the minimum width and maximum power of the emitted laser pulse. This work introduces a new laser diode driver (LDD) structure for high-resolution and long-range LiDAR transmitter (TX) system. It features a double pulse overlapping (DPO) scheme to generate ultra-short laser pulses spanning from 100 ps to 2 ns, achieving output pulsewidths significantly shorter than the control signal. Furthermore, two package configurations are implemented and an interleaved bonding method is analyzed and utilized to reduce the parasitic inductance and hence to improve the peak optical power. The parasitic effect analysis and system implementation circuit techniques are also presented. Fabricated in a 180-nm high-voltage BCD process, the two implemented TX systems achieve a minimum pulsewidth of 100 ps or a maximum output current of 15 A within 1-ns pulsewidth.

关键词： Laser radar Optical switches Diode lasers Optical pulses Semiconductor lasers Distance measurement signal to noise ratio Diode on chip diode on interposer diode on PCB direct time of flight (dToF) double pulse overlapping (DPO) high-resolution light detection and ranging (LiDAR) laser diode driver (LDD) long-range LiDAR transmitter (TX)

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A Bidirectional USB Power Delivery Voltage-Regulating Cable

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IEEE JOURNAL OF SOLID-state CIRCUITS 2025年

作者： Tong, Zhiguo Huang, Junwei Mao, Xiangyu Martins, Rui P. Lu, Yan Univ Macau Inst Microelect State Key Lab Analog & Mixed Signal VLSI FST DECE Macau Peoples R China Univ Macau Inst Microelect State Key Lab Analog & Mixed Signal VLSI Macau Peoples R China Univ Elect Sci & Technol Sch Integrated Circuit Sci & Engn Chengdu 610056 Peoples R China Tsinghua Univ Dept Elect Engn Beijing 100084 Peoples R China

The development of fast charging technology has significantly reduced the charging time for devices. However, with the increase of power level, the thermal and size issues become the limiting factors for fast charging, especially for compact devices. This article presents the concept of the voltage-regulating cable (VRC) which integrates the charging IC and all the associated passive components into the universal serial bus (USB) cable connector. By relocating the power converter and its associated heat from the devices to the cable, this design significantly reduces the device size and provides an alternative solution for the overheating issues. The VRC can regulate a bidirectional step-down voltage for two kinds of typical application scenarios: adapter-to-device (A2D) and device-to-device (D2D) scenarios. In addition, a symmetrical VRC structure is also proposed to facilitate a reversible and user-friendly connection. The designed VRC prototype, fabricated in 180-nm high-voltage BCD process, occupies an area of 4.7 x 2.9 mm(2), including all passive components. It achieves a peak power density of 3.17 W/mm(2) when transferring the maximum power of 42 W in the A2D scenario and a peak power density of 1.36 W/mm(2) with a maximum power of 18 W in the D2D scenario.

关键词： Universal Serial Bus Inductors Power cables Inductance Device-to-device communication Batteries Wire Temperature measurement Cable shielding Fast charging Adapter to device (A2D) bidirectional power delivery (BiDi-PD) cable cable emulator device to device (D2D) fast charging hybrid converter universal serial bus (USB) voltage-regulating cable (VRC)

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