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A Fully-Integrated Flexible Dual-Ring Switched-Capacitor DC-DC Converter With Fractional VCRs and Parasitic Reduction

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2024年第12期71卷 5683-5693页

作者： Jiang, Yifan Lu, Yan Jiang, Junmin Univ Macau Inst Microelect State Key Lab Analog Mixed Signal VLSI Taipa Macau Peoples R China Univ Macau FST DECE Macau Peoples R China Southern Univ Sci & Technol Dept Elect & Elect Engn Shenzhen 518055 Peoples R China

This paper presents a fully-integrated flexible dual-ring switched-capacitor (SC) converter to address the limited output voltage resolution in conventional SC converters. Based on the concept of reconfiguring multiple SC cells in series, the proposed dual-ring SC (DRSC) converter offers various combinations of cascading stages through the outer main ring configuration. Furthermore, the inner sub-ring operation allows for a more flexible selection of output nodes, enabling different power path interconnections and increasing the number of available voltage conversion ratios (VCRs). With 9 fractional VCRs, the converter offers a wide output range and fine output resolution. Compared to traditional SC topologies, the proposed topology exhibits the lowest slow switching limit resistance (R-SSL) and the most favorable G-V-2 metric, indicating high power efficiency. In addition, to reduce the parasitic capacitance, triple-well junction capacitors with increased reverse bias voltage were proposed. Parasitic capacitance with as low to 0.4% of the main capacitance was achieved. 3.9% efficiency improvement was measured. The chip was fabricated in a 180nm CMOS process and measured with 83% peak efficiency and 200mA maximum load current.

关键词： Converter ring DC-DC converter dual-ring fractional VCRs G-V-2 metric fully-integrated voltage regulator (FIVR) parasitic reduction switched capacitor (SC) converter

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Functionalized PAMAM constructed nanosystems for biomacromolecule delivery

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BIOMATERIALS SCIENCE 2023年第5期11卷 1589-1606页

作者： Wong, Ka Hong Guo, Zhaopei Law, Man-Kay Chen, Meiwan Univ Macau Inst Chinese Med Sci State Key Lab Qual Res Chinese Med Macau Peoples R China Univ Macau State Key Lab Analog & Mixed Signal VLSI IME & FST ECE Macau Peoples R China

Polyamidoamines (PAMAMs) are a class of dendrimer with monodispersity and controlled topology, which can deliver biologically active macromolecules (e.g., genes and proteins) to specific regions with high efficiency and minimum side effects. In detail, PAMAMs can be functionalized easily by core modification or surface amendment to encapsulate a wide range of biomacromolecules. Besides, self-assembled, cross-linked and hybrid PAMAMs with customized therapeutic purposes are developed as delivery vehicles, which makes PAMAMs promising for biomacromolecule therapy. In this review, we comprehensively summarize the application of PAMAMs in biomacromolecule delivery from the synthesis of functionalized PAMAM carriers to the development of PAMAM-based drug delivery systems. The underlying strategies for PAMAM functionalization and assembly are first systematically discussed, and then the current applications of PAMAMs for biomacromolecule delivery are reviewed. Finally, a brief perspective on the further applications of PAMAMs concludes, aiming to provide insights into developing PAMAM-based biomacromolecule delivery systems.

关键词： Nanosystems

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A Systematic Review of Voltage Reference Circuits: Spanning Room Temperature to Cryogenic Applications

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2025年第4期72卷 1533-1546页

作者： Deng, Chen Wu, Sai Liu, Chengcheng Peng, Yatao Law, Man-Kay Yin, Jun Martins, Rui P. Mak, Pui-In Univ Macau Inst Microelect State Key Lab Analog & Mixed Signal VLSI Macau Peoples R China Univ Macau Fac Sci & Technol FST Dept Elect & Comp Engn DECE Macau Peoples R China Univ Lisbon Inst Super Ten P-1049001 Lisbon Portugal

Cryo-CMOS IC for quantum applications, proposed for tens of years, are designed to control quantum processors operating at cryogenic temperatures (CTs). The reference circuits play a significant role in quantum controllers, providing a relatively stable biasing for analog and radio frequency (RF) circuit blocks. Based on a literature review, we discovered that achieving high-accuracy reference voltage or current at CTs is challenging due to the unstable temperature characteristics of complementary metal-oxide-semiconductor (CMOS), bipolar junction transistor (BJT), or resistors in the general CMOS process at CTs. Therefore, certain specialized device structures, such as dynamic threshold MOS (DTMOS), can be employed within the bulk CMOS process. Alternatively, BJT and other devices found in specific processes, such as silicon-germanium (SiGe) and fully depleted silicon on insulator (FD-SOI) CMOS, can achieve adaptive temperature compensation. This paper provides a succinct overview of several fundamental structures and common research hot spots about the reference voltage circuits, and then assesses their suitability for CT circuit design, considering the reliability of devices in bulk CMOS, FD-SOI CMOS, and SiGe process. Finally, the paper summarizes the types of cryo-temperature reference circuits and offers an overview and comparison of them.

关键词： Circuits Cryogenics Temperature dependence Temperature measurement Threshold voltage Temperature distribution Logic gates CMOS process Bipolar transistors Temperature sensors Cryogenic temperature quantum controller reference circuits CMOS BJT DTMOS SiGe FD-SOI

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A Scalable High-Current High-Accuracy Dual-Loop Four-Phase Switching LDO for Microprocessors

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IEEE JOURNAL OF SOLID-state CIRCUITS 2022年第6期57卷 1841-1853页

作者： Mao, Xiangyu Lu, Yan Martins, Rui P. Univ Macau State Key Lab Analog & Mixed Signal VLSI Inst Microelect Macau Peoples R China Univ Macau FST DECE Macau Peoples R China

High-performance microprocessors need high current (ampere-level), high accuracy, and fast-response power supplies. Comparing to analog and digital low-dropout (LDO) regulators, the switching LDO can be a better candidate for such requirements, as it can drive large power transistor(s) fast and accurately. However, conventional switching LDOs need large load capacitance to reduce the output ripple, which restricts their applications. This article presents a 1.5-A fully-integrated switching LDO for microprocessors, with an easily scalable load capability. Here, we introduce three techniques together to relief the output capacitance requirement: 1) four-phase 500-MHz pulsewidth modulation (PWM) with inherent current balancing;2) current-limited power cells resisting processor voltage and temperature (PVT) variations;and 3) hybrid fast-slow power transistors. Therefore, we reduce significantly the load capacitance to maximum load current ratio CL/IMAX when compared with the prior switching LDOs. Also, the proposed dual-loop architecture not only achieves a fast transient response, but also provides high-accuracy regulation. In addition, we design the tunable active voltage positioning (AVP). Fabricated in 28-nm CMOS, the proposed switching LDO measures a maximum 70-mV undershoot with a 1-A load current step with 10-ns edge time. The measured load regulation is 1 mV/A and the line regulation is 1.5 mV/V. Also, we obtain a good power supply rejection (PSR) of -63 dB at 10 kHz and -20 dB at 1 MHz. The PWM automatically moves to a pulse-skipping mode at light load, reducing the quiescent current to 1.8 mA, while the peak current efficiency is 99.27%.

关键词： Switches Switching circuits Power transistors Voltage control Pulse width modulation Regulation Control systems Active voltage positioning (AVP) dual loop fast response low-dropout (LDO) regulator pulsewidth modulation (PWM) control switching LDO regulator

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A Fully Integrated CMOS Tri-Band Ambient RF Energy Harvesting System for IoT Devices

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2023年第12期70卷 4705-4718页

作者： Yong, Jack Kee Lian, Wen Xun Ramiah, Harikrishnan Churchill, Kishore Kumar Pakkirisami Chong, Gabriel Lai, Nai Shyan Chen, Yong Mak, Pui-In Martins, Rui P. Univ Malaya Fac Engn Dept Elect Engn Kuala Lumpur 50603 Malaysia Univ Malaya Fac Engn Dept Elect Engn Kuala Lumpur 50603 Malaysia Nexperia Res & Dev Penang Bukit Jambul George Town 11900 Malaysia Asia Pacific Univ Technol & Innovat Sch Engn Kuala Lumpur 57000 Malaysia Univ Macau State Key Lab Analog & Mixed Signal VLSI IME DECE FST Macau Peoples R China Univ Macau State Key Lab Analog & Mixed Signal VLSI IME DECE FST Macau Peoples R China Univ Lisbon Inst Super Tecn P-1649004 Lisbon Portugal

This article presents a fully integrated tri-band RF energy harvesting system (RFEH) in 65-nm CMOS technol-ogy. The system is designed to harvest ambient RF energies at 900 MHz, 1.9 GHz, and 2.4 GHz through a tri-band impedance matching network (IMN), cross-coupled differential-drive (CCDD) rectifier, and an output voltage monitoring circuit to limit the rectified output voltage to 3.3 V. The system achieves a power conversion efficiency (PCE) of over 30 % across all three frequency bands with a peak of 42.8 %. Furthermore, the system exhibits a peak sensitivity of-20 dBm at an output DC voltage of 1 V output.

关键词： Radio frequency energy harvesting (RFEH) tri-band multiband impedance matching network (IMN) over-voltage limiter CMOS

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A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS

A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type T...

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作者： Zhang, Jincheng Wang, Yujia Chen, Yong Ren, Junyan Ma, Shunli Fudan University State Key Laboratory of Asic and System Shanghai200433 China University of Macau State-Key Laboratory of Analog and Mixed-Signal Vlsi and IME/ECE-FST China

This article presents a high-power wideband power amplifier (PA) with a four-way power-combining technique for $D$ -band high-resolution radar. The power combiner is based on a two-section Chebyshev impedance converter to achieve a large bandwidth (BW) and is realized with slow wave coplanar waveguides (S-CPWs) to reduce the insertion loss and chip area. Therefore, our developed technique can provide broadband and low-loss power-combining scheme in a very compact size. A high-power PA with four-way combining has been fabricated in a 28-nm CMOS bulk technology. The unit PA uses low- $k$ transformer-based coupled-resonator networks to realize wideband matching. The measured results of the PA prototype demonstrate the peak gain of 22.6 dB, the saturated output power of 16.2 dBm, and the peak power added efficiency of 8.6% at 135 GHz with a 3-dB BW of 28 GHz from 124 to 152 GHz. Meanwhile, the total area of this PA die is merely 0.66 $\times $ 0.73 mm. © 1963-2012 IEEE.

关键词： Power amplifiers

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A Resonant Switched-Capacitor Parallel Inductor Hybrid Buck Converter

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2025年第5期72卷 2432-2443页

作者： Cai, Guigang Martins, Rui P. Lu, Yan Univ Macau Inst Microelect State Key Lab Analog & Mixed Signal VLSI FST DECE Macau Peoples R China Hong Kong Univ Sci & Technol Guangzhou Microelect Thrust Funct Hub Guangzhou 511400 Peoples R China Dept Elect Engn State Key Lab Space Network & Commun Beijing 100084 Peoples R China

This article presents a resonant switched-capacitor (SC) parallel inductor (ReSC-PL) hybrid buck converter with reduced inductor current for high and wide voltage conversion ratio (VCR). The proposed ReSC-PL buck converter lowers down the switching node voltage with V-IN-related flying capacitors and reduces the inductor current I-L with V-OUT-related flying capacitors. Therefore, it can always effectively reduce I-L to a value below 0.5 similar to 0.67 of the output current I-O for high VCRs ranging from 10 to 20. In addition, by utilizing the parasitic inductor, this design effectively reduces the glitches on the output and forms a resonant SC operation to further improve the conversion efficiency. This work, fabricated in 180-nm Bipolar-CMOS-DMOS (BCD), occupies an area of 8.88 mm(2). Measurement results show that the proposed ReSC-PL buck obtains a peak efficiency of 91.8% and a peak current density of 350 A/cm(3) with a power inductor as small as 2.5 x 2 x 1.2 mm(3), with 12-V input and 0.6-V to 1.2-V output, and 5-A maximum output current.

关键词： Always-dual-path (ADP) buck converter dc-dc converter hybrid converter reduced inductor current resonant switched-capacitor high voltage conversion ratio (VCR)

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A 23-nA Quiescent Current Output-Capacitorless LDO Regulator for IoT Devices 15

A 23-nA Quiescent Current Output-Capacitorless LDO Regulator...

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15th IEEE International Conference on ASIC, ASICON 2023

作者： Zhou, Shengnan Mao, Xiangyu Huang, Cheng Martins, Rui P. Lu, Yan University of Macau State Key Laboratory of Analog and Mixed-Signal VLSI Institute of Microelectronics and FST-DECE China Iowa State University Department of Electrical and Computer Engineering Ames United States

ISBN: (纸本)9798350312980

This paper presents an ultra-low quiescent current output-capacitorless low dropout regulator (OCL-LDO) with fast transient response. We design a rail-to-rail error amplifier with improved adaptive biasing, which provides a limited bias current at heavy load for better load regulation. The buffer with adaptive biasing and almost zero input-output voltage shift and embedded body-bias, combines the error amplifier and the gate of MP. The proposed LDO is designed in a 65-nm CMOS process. Simulation result shows that the proposed LDO consumes a quiescent current of only 23 nA at a supply voltage of 0.8 V. The voltage undershoot is 98 mV during a 20-mA maximum load transient. And we obtain a FOMT of 0.00023 ps. © 2023 IEEE.

关键词： adaptive biasing internet of things Output-capacitorless LDO rail-to-rail buffer ultra-low quiescent current

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A Millimeter-Wave CMOS VCO Featuring a Mode-Ambiguity-Aware Multi-Resonant-RLCM Tank

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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 2022年第1期69卷 172-185页

作者： Guo, Hao Chen, Yong Yang, Chaowei Mak, Pui-In Martins, Rui P. Univ Macau State Key Lab Analog & Mixed Signal VLSI Macau 999078 Peoples R China Univ Macau IME ECE FST Macau 999078 Peoples R China

This paper presents a millimeter-wave NMOSPMOS-complementary (CMOS) VCO with a multi-resonant Resistor-Inductor-Capacitor-Mutual Inductance (RLCM) tank. It features an 8-port multi-tap inductor with the switched-capacitor arrays to generate and align the 1st, 2nd and 3rd harmonic resonances;all exhibit high impedance and high intrinsic quality factor to improve the absolute phase noise (PN) at both the flicker and thermal regions. The inductor of the RLCM tank introduces a metal resistor technique to fully prevent the mode-ambiguity issue during the VCO startup. Meanwhile, we first propose a detailed analysis of the upper and lower bound of the metal resistor, which is verified by the theoretical analysis, and circuit simulation. Prototyped in 65-nm CMOS technology, the VCO scores a PN@ 1MHz down to -111.41 dBc/Hz with a power consumption of 11.1 mW at 1 V;it corresponds to a FOM@ 1MHz up to 189.4 dBc/Hz over a 15.2% tuning range (24.62 to 28.66 GHz), while exhibiting a low 1/f3PN corner between 480 to 730 kHz.

关键词： CMOS 1/ f3 phase noise corner figure-of-merit (FOM) flicker (1/f) noise thermal noise inductor-capacitor (LC) tank voltage-controlled oscillator (VCO) impulse sensitivity function (ISF) common-mode (CM) differential-mode (DM) resistor-inductor-capacitor-mutual inductance (RLCM)

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A Battery-Input Three-Mode Buck-Boost Hybrid DC-DC Converter With 97.6% Peak Efficiency

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IEEE JOURNAL OF SOLID-state CIRCUITS 2024年第5期59卷 1567-1577页

作者： Zhao, Shuangxing Zhan, Chenchang Lu, Yan Southern Univ Sci & Technol Sch Microelect Shenzhen 518055 Peoples R China Univ Macau Inst Microelect State Key Lab Analog Mixed Signal VLSI FST DECE Macau Peoples R China Minist Educ Engn Res Ctr Integrated Circuits Next Generat Comm Shenzhen 518055 Peoples R China

This article presents a three-mode non-inverting buck-boost hybrid converter (3M-BBHC) suitable for mobile devices powered by lithium-ion (Li-ion) batteries. The proposed3M-BBHC can work in buck, boost, or buck-boost mode, and it can switch the operation mode smoothly with a small ripple as the input voltage changes. Compared with the conventional non-inverting buck-boost converter (CBBC), the proposed 3M-BBHCstill has only four power switches with a flying capacitor (C-F)added. The number of switches conducting current in series with the inductor is reduced from 2 (in CBBC) to 1 (in 3M-BBHC)to decrease the conduction and switching losses. The inductor connects to the input terminal, which means the 3M-BBHChas a continuous input current and thus low electromagnetic interference (EMI). Besides, in buck mode, the inductor current is always smaller than the output current, which decreases the inductor dc resistance (DCR) conduction loss. The 3M-BBHCwas fabricated in a standard 0.18-mu m CMOS process, using only 3.3-V devices to further reduce the losses. A 97.6% peak efficiency is measured by using a 2.2-mu H inductor with 110-mDCR, a 10-mu FCF, a 10-mu F output capacitor (C-O), and a 2-MHzswitching frequency. Its input voltage ranges from 2.7 to 4.2 V, and it can deliver an output current of 100-800 mA at 3.3-Vregulated output voltage.

关键词： 33-V devices flying capacitor lithium-ion (Li-ion) batteries low electromagnetic interference (EMI) soft-startup circuits three-mode non-inverting buck-boost hybrid converter (3M-BBHC)

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