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Recent advancements in continuously scalable conversion-ratio switched-capacitor converter

Journal of Semiconductors 2024年第4期45卷 8-11页

作者： Mo Huang Yuanfei Wang Rui P.Martins Yan Lu State Key Laboratory of Analog and Mixed-Signal VLSI Institute of MicroelectronicsUniversity of MacaoMacaoChina

Switched-capacitor(SC)DC-DC converter[1]is an impor-tant alternative to inductive DC-DC converter,in terms of removing the bulky power ***,it is widely used in low-profile,low-power applications,such as the internet of things(IoT)sensor nodes and energy harvesting[2].Mean-while,considering that capacitor has a much higher energy density than inductor,high-power applications.

关键词： converter switched removing

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Favorable basic cells for hybrid DC–DC converters

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Journal of Semiconductors 2023年第4期44卷 10-12页

作者： Yan Lu Guigang Cai Junwei Huang State Key Laboratory of Analog and Mixed-Signal VLSI Institute of MicroelectronicsUniversity of MacaoMacaoChina

With the surging demands for extremely high current at sub-1 V supply voltage level in high performance computing and autonomous driving,high density power delivery becomes one of the critical limiting factors for system integration.48 V power bus system is emerging for these high current applications to reduce the IR losses on the power delivery ***,there is a wide voltage gap between the power bus and the digital supply rails at the point-of-load(PoL),calling for novel power conversion topologies and system *** the performances of the integrated power circuits heavily depend on both the quality factor of passive components and the figure-of-merit(FoM)of active devices,a smart circuit designer should also find an optimum way to guide the currents and to deliver the power.

关键词： system limiting autonomous

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Rapid Discovery of Gas Response in Materials Via Density Functional Theory and Machine Learning

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Energy & Environmental Materials 2025年第1期8卷 164-172页

作者： Shasha Gao Yongchao Cheng Lu Chen Sheng Huang School of Materials Science and Physics China University of Mining and TechnologyXuzhou 221116China State-Key Laboratory of Analog and Mixed-Signal VLSI IMEUniversity of MacaoMacao 999078China

In this study,a framework for predicting the gas-sensitive properties of gas-sensitive materials by combining machine learning and density functional theory(DFT)has been *** framework rapidly predicts the gas response of materials by establishing relationships between multisource physical parameters and gas-sensitive *** order to prove its effectiveness,the perovskite Cs_(3)Cu_(2)I_(5) has been selected as the representative *** physical parameters before and after the adsorption of various gases have been calculated using DFT,and then a machine learning model has been trained based on these *** studies have shown that a single physical parameter alone is not enough to accurately predict the gas sensitivity of ***,a variety of physical parameters have been selected for machine learning,and the final machine learning model achieved 92%accuracy in predicting gas *** is important to note that although there have been no previous reports on the response of Cs_(3)Cu_(2)I_(5) to hydrogen sulfide,the resulting model predicts the gas response of H2S;it is subsequently confirmed *** method not only enhances the understanding of the gas sensing mechanism,but also has a universal nature,making it suitable for the development of various new gas-sensitive materials.

关键词： density functional theory gas-sensitive materials machine learning

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A 600-V GaN Active Gate Driver with Level Shifter Common-Mode Noise Sensing for Built-in dV/dt Self-Adaptive Control 35

A 600-V GaN Active Gate Driver with Level Shifter Common-Mod...

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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

作者： Liu, Tianqi Martins, Rui P. Lu, Yan Institute of Microelectronics DECE/FST University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi 999078 China

ISBN: (纸本)9798350396829

This paper proposes a 600- V half-bridge GaN active gate driver with built-in dV/dt self-adaptive control utilizing a common-mode (CM) noise sensing and amplifying unit. The two 600- V LDMOS FETs existing in the conventional level shifter are used to sense the CM noises. When the dV/ dt rate is large enough, the sensed CM noises will be amplified and then rapidly provide a pull-down gate current for reducing the turn-on speed. As the dV/dt rate becomes smaller, the pull-down gate current will decrease adaptively, which achieving double peaks in the waveform of driving current. Compared to adding an extra high-voltage capacitor or LDMOS as a dV/dt sensor, this method has no additional area overhead and negligible control delay. At the same slew rate, we compare the low-side gate noises induced by Miller coupling at condition of either only RON or the proposed self-adaptive adjustments. It shows that the noise peak in VGL for self-adaptive control decreases 46% at VJN=300V and also the noise envelope becomes smaller due to the dV/dt adjustment, dramatically reducing the probability of shoot-through current in the half bridge. © 2023 IEEE.

关键词： Gallium nitride

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A 320MHz BW NS TD-ADC Assisted C/DT Hybrid Pipelined ADC with SAB-based Residue Amplifying Filter

A 320MHz BW NS TD-ADC Assisted C/DT Hybrid Pipelined ADC wit...

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2024 IEEE Asian Solid-state Circuits Conference, A-SSCC 2024

作者： Xing, Kai Zhu, Yan Martins, Rui Paulo Chan, Chi-Hang State-Key Laboratory of Analog and Mixed Signal VLSI DECE FST University of Macau China

ISBN: (纸本)9798350376326

With the advent of WLAN technologies, over 320 MHz BW and > 65dB DR ADCs become indispensable to support newly developed WiFi standards. Three classic solutions can reach the said targets but involve various compromises (Fig. 1 top). CT MASH ADCs [1] rely on a relatively high OSR (7) as well as NS order to accommodate the adequate noise spectral density (NSD), limiting the energy efficiency. The CT pipeline (PIPE) ADC [2-3] obviates the feedback loop and its 1st stage energy effectively provides preliminary quantization, residue generation, amplification, and filtering. However, the backend CT quantization can be power-hungry [2] [4]. The DT NS pipeline ADC offers a low-power alternative [5] but loses the intrinsic anti-aliasing (AA) ability from its CT counterparts. This work hybridizes CT and DT NS PIPE, gaining the pros from the CT PIPE front-end and DT PIPE backend. Together with the Single amplifier biquad (SAB) - Residue Amplifying Filter (RAF) and NS TD-QTZ, the C/DT PIPE ADC demonstrates superior energy efficiency over CT MASH ADCs with 320MHz BW. © 2024 IEEE.

关键词： Anti-aliasing

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A 0.0019-mm² LC-Ring Oscillator With an Ultra-Compact Transformer Achieving 175.2 dBc/Hz FoM@1MHz and 202.4 dBc/Hz FoMA

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IEEE Transactions on Circuits and Systems II: Express Briefs 2025年第5期72卷 693-697页

作者： Zhao, Ya Huang, Lingao Wang, Runchen Yin, Jun Mak, Pui-In Geng, Li Fan, Chao Xi’an Jiaotong University School of Microelectronics Xi’an710049 China University of Macau State-Key Laboratory of Analog and Mixed-Signal VLSI Faculty of Science and Technology Department of ECE China

This brief describes an area-efficient LC-ring oscillator featuring an ultra-compact transformer resonator. The series inverters could be equivalent to the negative resistors providing gain compensation. The involved inverters and switched capacitor banks are fully integrated underneath the transformer resonator. Thus, with a comparable area of the typical ring oscillators, our oscillator shows significantly improved phase noise (PN) and figure-of-merit (FoM). Besides, we implemented the stacked coupling and distributed-coupling transformer-based LC-ring oscillators for the PN and FoM comparison. The stacked-coupling LC-ring oscillator can lower the PN with the same frequency and power budget. Fabricated in 40-nm CMOS, our stacked-coupling LC-ring oscillator scores a PN@1MHZ of -110.4 dBc/Hz across the frequency tuning range from 3.7 to 5.1 GHz with an active area of 0.0019 mm2, corresponding to a superior FoM (FoMA)@1MHz of 175.2 dBc/Hz (202.4 dBc/Hz) that is 4.2 dB (6 dB) higher than the distributed-coupling LC ring oscillator. © 2004-2012 IEEE.

关键词： Budget control

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Free‐standing BiOI@MWCNTs photoelectrodes for photo‐rechargeable zinc‐ion batteries

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Journal of Materials Science & Technology 2024年第31期198卷 137-142页

作者： Bei Long Xiaojie Liang Yong Pei Xiongwei Wu Xianyou Wang Man-Kay Law State Key Laboratory of Analog and Mixed-Signal VLSI University of MacaoMacao 999078China School of Chemistry Xiangtan UniversityXiangtan 411105China School of Chemistry and Materials Science Hunan Agricultural UniversityChangsha 410128China

Photo-rechargeable batteries can implement solar energy harvesting and storage simultaneously and have attracted strong interest from *** development of photoactive electrodes is the key to promoting the development of high-performance ***,a free-standing BiOI@MWCNTs film is developed as photoelectrode to achieve the effective separation of photogenerated electron-hole pairs for high-efficiency solar-electric-chemical energy *** can charge up photocells with a photoconversion efficiency of∼1.3%,as well as accelerate charge transfer without requiring any external bias *** situ XRD and XPS tests prove that the enhanced electrochemical reaction kinetics can improve the chemical-electric energy conversion efficiency under *** capacity of the proposed photocell can be increased by 10.6%(from 195 mA h g^(-1)to 216 mA h g^(-1)at 0.2 A g^(-1))and 57.9%(from 76 mA h g^(-1)to 120 mA h g^(-1)at 5.0 A g^(-1))in light condition,while exhibiting a cyclic life of up to 600 *** work can help to deepen the understanding of photo-rechargeable batteries.

关键词： Free-standing BiOI@MWCNTs film Photoactive electrode Photoaccelerated chemical-electric energy conversion Long cyclic life Photo-rechargeable zinc ion battery

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Reactive oxygen species and nitric oxide scavenging nanoparticles alleviating rheumatoid arthritis through adjusting the seeds and growing soils

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Acta Pharmaceutica Sinica B 2023年第12期13卷 5016-5029页

作者： Peng Hua Ruifeng Liang Yanbei Tu Yuying Yin Man-Kay Law Meiwan Chen State Key Laboratory of Quality Research in Chinese Medicine Institute of Chinese Medical SciencesUniversity of MacaoMacao SARChina State Key Laboratory of Analog and Mixed-Signal VLSI IME and FST-ECEUniversity of MacaoMacao SARChina

Normalizing inflamed soils including reactive oxygen species(ROS),nitric oxide(NO),cellfree DNA,and regulating infammation-related seeds such as macrophages,neutrophils,fibroblasts,represent a promising strategy to maintain synovial tissue homeostasis for rheumatoid arthritis(RA)***,ROS scavenging amphiphilic block copolymer PEGylated bilirubin and NO-scavenging PEGylated o-phenylenediamine were fabricated to self-assemble into a dually responsive nanoparticle loaded with JAK inhibitor notopterol(Not@BR/oPDA-PEG,NBOP NPs).The simultaneous ROS and NO depletion combined with JAK-STAT pathway inhibition could not only promote M2 polarization to reduce further ROS and NO generation,but also decrease cytokines and chemokines to prevent immune cell ***,NBOP NPs responded to high level ROS and NO,and disintegrated to release notopterol in inflamed joints as the hydrophobic heads BR and oPDA were transformed into hydrophilic *** released notopterol could inhibit the JAK-STAT pathway of infammatory cells to reduce the secretion of pro-inflammatory cytokines and *** strategy represented an effective way to regulate RA soils and seeds through breaking the positive feedback loop of inflammation aggravation,achieving an excellent anti-RA efficacy in a collagen-induced arthritis rat *** together,our work offered a reference to adjust RA soils and seeds for enhanced RA treatment.

关键词： Bilirubin o-Phenylenediamine Notopterol ROS and NO scavenging JAK-STATpathway Anti-inflammatory Cartilage protection Rheumatoid arthritis

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A 79.5dB-SNDR Pipelined-SAR ADC with a Linearity-Shifting 32× Dynamic Amplifier and Mounted-Over-Die Bypass Capacitors

A 79.5dB-SNDR Pipelined-SAR ADC with a Linearity-Shifting 32...

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2023 IEEE Symposium on vlsi Technology and Circuits, vlsi Technology and Circuits 2023

作者： Zhang, Minglei Cao, Yuefeng Zhu, Yan Chan, Chi-Hang Martins, R.P. University of Macau State-Key Laboratory of Analog and Mixed-Signal Vlsi Ime Macao China

ISBN: (纸本)9784863488069

This paper presents a 32× low-noise dynamic amplifier (DA) with a linearity-shifting technique, facilitating a 15b pipelined-SAR ADC with 80 dB SNR@DC. The linearity-shifted DA decouples the fundamental conflict between the noise and linearity in conventional DAs, rending a THD below -60dB at 0.8Vpp,diff output swing. Moreover, the reference voltages are stabilized by the cost-effective mounted-over-die bypass capacitors. The 60MS/s ADC achieves 95.8dB and 87.3dB SFDR with a DC and Nyquist input, respectively, and an input noise density of 10.2nV/√Hz. © 2023 JSAP.

关键词： Cost effectiveness

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1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第5期46卷 805-808页

作者： Fan, Yutong Zhang, Weihang Zhang, Yachao Wu, Yinhe Feng, Xin Liu, Zhihong Jiang, Yang In Mak, Pui Hao, Yue Zhang, Jincheng Xidian University National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China Guangzhou Institute of Technology Xidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou510555 China Institute of Microelectronics University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China

In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of 22~μ m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of 3.5× 10-4 mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance (RON, SP ) of 3.74 mΩ ċ cm2 were achieved, resulting in a forward power figure of merit (PFOM = V BR2 /RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V DS- OFF ) and a 10 ms -1900 V V DS- OFF (delay time = 1~μ s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results. © 1980-2012 IEEE.

关键词： Gallium nitride

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