检索结果-内蒙古大学图书馆

Maximizing hydrogen evolution via Co-Ni dual atoms and nanoclusters on hierarchically ordered porous carbon framework

引用

Science China Materials 2024年第10期67卷 3197-3205页

作者： Qian Li Pan Zhang Huaiguang Li Yuan Wang Dongsheng Tang Qun Li Jiabin Wu Synergetic Innovation Center for Quantum Effects and Application Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of EducationCollege of Physics and Information ScienceHunan Normal UniversityChangsha 410081China National Key Laboratory of Advanced Micro and Nano Manufacture Technology School of Integrated CircuitsPeking UniversityBeijing 100871China The Chinese University of Hong Kong ShenzhenShenzhen 518172China CAS Key Laboratory of Nanosystem and Hierarchical Fabrication&CAS Center for Excellence in Nanoscience National Center for Nanoscience and TechnologyBeijing 100190China Department of Chemistry Tsinghua UniversityBeijing 100084China Insititute of Microelectronics State Key Laboratory of Analog and Mixed-Signal VLSIUniversity of MacaoMacao 519000China

Efficient hydrogen production through water splitting relies on the development of high-performance catalysts for the hydrogen evolution reaction(HER).In this study,we synthesized the CoNi SAs@NPs-NC catalyst using multi-metal single-crystal ordered macroporous metal-organic frameworks(MOFs)as *** catalyst features a hierarchical porous structure with ordered macropores and micropores,which not only provides a high specific surface area but also promotes efficient mass ***,the incorporation of bimetallic components,coupled with synergistic interactions between single atoms(SAs)and nanoparticles(NPs),significantly enhances its catalytic *** CoNi SAs@NPs-NC nanocatalysts demonstrated exceptional activity in the HER,recording overpotentials of 90 mV in 1 M KOH and 61 mV in 0.5 M H_(2)SO_(4),both at a current density of 10 mA cm^(−2).In addition,density functional theory(DFT)analysis was employed to investigate the synergistic interactions among CoNi NPs,SAs,and nitrogen *** finding highlights the promising potential of the CoNi SAs@NPs-NC catalyst for efficient hydrogen evolution,making it a valuable candidate for advancing the field of water splitting.

关键词： three dimensional ordered macroporous Co-Ni dual atoms Co-Ni nanoclusters HER synergistic effect

来源：评论

学校读者我要写书评

暂无评论

A 60-GHz CMOS Balanced Power Amplifier with Miniaturized Quadrature Hybrids Achieving 19.0-dBm Output Power and 24.4% Peak PAE

A 60-GHz CMOS Balanced Power Amplifier with Miniaturized Qua...

引用

IEEE Asia-Pacific Conference on Circuits and Systems

作者： Zhiyang Zhang Xi Wang Yong Chen Junyan Ren Shunli Ma State Key Laboratory of ASIC & System Fudan University Shanghai China State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST University of Macau Macau China

In this paper, a 60-GHz CMOS balanced power amplifier (PA) is proposed. Two miniaturized quadrature hybrids are utilized to realize power splitting and power combining. The compact hybrids can achieve good input and output matching performances. Transistor-layout optimization is taken into consideration to boost the output power and improve the power-added efficiency (PAE). The balanced PA is designed in 65-nm bulk CMOS and all the electromagnetic (EM) simulations of passive devices are executed in the EM tool. Post-layout simulation results show that the proposed balanced PA realizes a small-signal gain of 29.1 dB at 60 GHz with an 11-GHz bandwidth. With a 1.2-V supply voltage and 300-mW power consumption, the balanced PA achieves a saturated output power of 19.0 dBm and 24.4% peak PAE at 60 GHz, which is suitable for 60-GHz wireless systems.

关键词： Wireless communication Simulation Power amplifiers Bandwidth Voltage Hybrid power systems Transistors

来源：评论

学校读者我要写书评

暂无评论

A 30-mA Compensation-Free Output-Capacitorless analog LDO With Hybrid Adaptive Biasing

引用

IEEE Transactions on Power Electronics 2025年第8期40卷 11182-11196页

作者： Tan, Yee-Chyan Ramiah, Harikrishnan Hatta, Sharifah Fatmadiana Wan Muhamad Lai, Nai Shyan Lim, Chee-Cheow Martins, Rui P. Mak, Pui-In Chen, Yong Universiti Tunku Abdul Rahman Department of Electronic Engineering Faculty of Engineering and Green Technology Kampar31900 Malaysia University of Malaya Department of Electrical Engineering Faculty of Engineering Kuala Lumpur50603 Malaysia Asia Pacific University of Technology and Innovation School of Engineering Kuala Lumpur57000 Malaysia Infinecs Systems Sdn. Bhd. Bayan Lepas Penang11900 Malaysia University of Macau State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST 999078 China Universidade de Lisboa Insitituto Superior Técnico Lisbon1649-004 Portugal Tsinghua University Department of Electronic Engineering Beijing100190 China

This article presents an output-capacitorless low-dropout regulator (OCL-LDO), merging with a hybrid push-pull buffer. The hybrid push-pull buffer implements a dynamic and adaptive biasing push-pull gate driving circuit, achieving stability without needing a complex compensation circuit and external load capacitor. Our devised OCL-LDO can operate with a load current range of 0-30 mA, with a quiescent current of 7 μA at zero load current. The proposed OCL-LDO is fabricated in a 0.18-μm CMOS process with an active area of 0.03 mm2. Measurement results show that with a load current stepping from 0-30 mA and an edge time of 100 ns, the output voltage undershoot is 0.14 V, with a corresponding recovery time of 150 ns. The measured load regulation is 0.207 mV/mA at a supply voltage of 1.15 V and a dropout voltage of 0.15 V. © 1986-2012 IEEE.

关键词： CMOS integrated circuits

来源：评论

学校读者我要写书评

暂无评论

A 33-37GHz Two-Path Power Amplifier with>18-dB Gain and 26.7-dBm Psat in 150nm GaAs Process

A 33-37GHz Two-Path Power Amplifier with>18-dB Gain and 26.7...

引用

Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Zhonghao Sun Zhili Liu Tianxiang Wu Hao Yu Yong Chen Shunli Ma State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China School of Microelectronics Southern University of Science and Technology Shenzhen China State-Key Laboratory of Analog and Mixed-Signal VLSI and IME/ECE-FST University of Macau Macao China

This paper presents a GaAs power amplifier (PA). Through the theoretical analysis of the small-signal modeling and large-signal analysis of GaAs transistors, the main influencing factors affecting the saturated output power and gain of a single Gaas transistor are achieved. We develop a low-loss broadband matching by using T-type matching network technology. In addition, the input matching network and the output matching network are used to realize power distribution, which solves the problems of large area and high insertion loss of the traditional power divider in GaasPA. The designed PA is based on a 0.15um GaAs process. The simulation results show that our GaasPA can achieve a saturated output power of 26.7 dBm and a gain of 18 dB in the range of 33-to-37GHz, the DC power consumption is 214 mA at a supply of 5 V, and the chip area is $1.0 \ \mathbf{mm} \ \times \ 1.45 \ \mathbf{mm}$ ,

关键词：

来源：评论

学校读者我要写书评

暂无评论

A Blocker-Tolerant Mixer-First Receiver with Channel BW Extention Technique Achieving 22.2 dBm OOB-IIP3 and 23.3 MHz BW

A Blocker-Tolerant Mixer-First Receiver with Channel BW Exte...

引用

International Conference on Integrated Circuits and Microsystems (ICICM)

作者： Yongjun He Gengzhen Qi Pui-In Mak School of Microelectronics Science and Technology Sun Yat-sen University Zhuhai China State-Key Lab of Analog and Mixed-Signal VLSI / IME University of Macau Macao China

ISBN: (纸本)9781665460583

In this work, a 0.5-to-2 GHz blocker-tolerant mixer-first receiver (RX) is proposed, which features a pair of complex poles to extend the Bandwidth (BW) and enhance the linearity, a fully-differential low-noise transconductance-amplifier (LNTA) to improve noise Figure (NF), and a transmission-gate (TG) mixer to reduce the local oscillator (LO) leakage. By using an attenuator as the bypass feedback of capacitor, a pair of complex poles is introduced at baseband (BB) as low-pass response and frequency-translated to RF as bandpass response, achieving −40dB/dec roll-off slope. When implemented in 65 nm CMOS technology, the simulation results show that at 80 MHz offset the RX achieves 22.2 dBm OOB-IIP3, 23.3 MHz channel BW and −81 dBm LO leakage. Covering from 0.5 to 2 GHz, the NF ranges 4.1 to 6.2 dB while the RX consumes a reasonable power of 57 to 75 mW. The active area is $0.96 mm^{2}$.

关键词： Resistors Radio frequency Micromechanical devices Noise figure Power demand Simulation Linearity

来源：评论

学校读者我要写书评

暂无评论

A 32dBm OOB-IIP3 BW-Extended 5G-NR Receiver with 4th-Order Gain-Boosted N-Path LNA

A 32dBm OOB-IIP3 BW-Extended 5G-NR Receiver with 4th-Order G...

引用

IEEE Asia-Pacific Conference on Circuits and Systems

作者： Zhixiang Liu Shiyou Wei Gengzhen Qi Pui-In Mak School of Microelectronics Science and Technology Sun Yat-sen University Zhuhai China State-Key Lab of Analog and Mixed-Signal VLSI/IME University of Macau Macao China

This paper reports a self-interference-resilient receiver (RX) for 5G-NR-FDD covering 0.5 to 2GHz. It incorporates a $4^{\text{th}}$ -order gain-boosted N-path low-noise amplifier (LNA) and a $2^{\text{nd}}$ -order baseband (BB) TIA to widen the −3dB RF-BW and also enhance the out-of-band (OOB) roll-off slope. Furthermore, a positive-feedback loop is created for the input-impedance matching purpose thanks to the impedance-translation property of the N-path network. Implemented in 65nm CMOS process, the simulation results show that with >54MHz RF-BW the RX achieves >24dB OOB rejection at 80MHz offset. When the offset frequency $(\Delta f)$ is twice the −3dB RF-BW, the RX achieves 32dBm OOB-IIP 3 , while consuming a reasonable power of 27 to 67mW. The noise figure (NF) ranges from 3.2 to 5.5dB and active area is $0.38\text{mm}^{2}$ .

关键词： Radio frequency Noise figure Low-noise amplifiers Power demand Circuits and systems Simulation Impedance matching

来源：评论

学校读者我要写书评

暂无评论

A 0.5 to 2GHz Blocker-Tolerant Receiver Achieving 29dBm OOB-IIP3 and 3.2 to 6dB NF Using Bottom-Plate Switched-Capacitor Technique

A 0.5 to 2GHz Blocker-Tolerant Receiver Achieving 29dBm OOB-...

引用

IEEE Asia-Pacific Conference on Circuits and Systems

作者： Yi Mao Yuyang Du Yongjun He Gengzhen Qi Pui-In Mak School of Microelectronics Science and Technology Sun Yat-sen University Zhuhai China State-Key Lab of Analog and Mixed-Signal VLSI/IME University of Macau Macao China

In this paper, a blocker-tolerant receiver (RX) is proposed covering 0.5 to 2GHz, which incorporates a gain-boosted (GB) mixer-first low-noise amplifier (LNA) network and a bottom-plate switched-capacitor (SC) N-path filter to enhance the out-of-band (OOB) blocker suppression and also improve the noise figure (NF). Furthermore, a clock-delay technique is proposed to improve the LO non-overlap characteristics. Implemented in 65nm CMOS technology, the simulated results present that under 80MHz offset frequency the RX achieves 29dBm OOB-IIP 3 and −2.3dBm B −1dB. The noise figure (NF) is simulated ranging from 3.2 to 6dB, and the active area is 0.66mm 2 . At 2GHz, the power consumption is 25mW, in which only 4.7mW is due to the LO dynamic power.

关键词： Radio frequency Noise figure Low-noise amplifiers Power demand Linearity Switches Receivers

来源：评论

学校读者我要写书评

暂无评论

Boundary conditions analysis of circular capacitive micromachined ultrasonic transducer (CMUT) devices

引用

Recent Patents on Engineering 2021年第3期15卷 287-293页

作者： Wang, Jiujiang Yu, Yuanyu Kuang, Jiangming Zhang, Shuang Xu, Jing Liu, Xin Data Recovery Key Laboratory of Sichuan Province College of Computer Science Neijiang Normal University Nei-jiang641100 China BeiDou and Wisdom Medical Doctor Workstation Neijiang Normal University Neijiang641110 China State Key Laboratory of Analog and Mixed-Signal VLSI University of Macau Macau999078 China

Background: Capacitive Micromachined Ultrasonic Transducer (CMUT) is a new type of ultrasound transducer that has gained much research interest in ultrasound imaging because of its wider bandwidth, higher receiving sensitivity, and is more likely to be integrated with an integrated circuit (IC). The analytical solution is intuitive, fast, and convergent among simulation methods. The membrane deflection is important to the CMUT performance. The deformation of a circular CMUT under an external force can be described by von Kármán equations. Objective: To find suitable boundary conditions that are crucial for the governing equations to be properly solved to get the analytical solutions for membrane deformation. Methods: Features of two commonly used CMUT fabrication methods, Sacrificial Release method (SR) and Wafer Bonding (WB) method, are introduced. The force and moment equilibrium conditions of the supporting post are analyzed to get the boundary condition equations. Results: The analytical results match well with the Finite Element Method (FEM) results for the fixed boundary condition while there are still some differences for the elastic boundary condition. Conclusion: The boundary conditions for SR fabricated devices are elastic support while the boundary conditions for WB fabricated devices are fixed. © 2021 Bentham Science Publishers.

关键词： Fabrication

来源：评论

学校读者我要写书评

暂无评论

A Fast Response Digital Low-Dropout Regulator Based on Enhanced analog Assisted Loop 3

A Fast Response Digital Low-Dropout Regulator Based on Enhan...

引用

3rd IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020

作者： Chen, Ruipeng Zhou, Shaolin Wu, Zhaohui Li, Bin Huang, Mo South China University of Technology School of Microelectronics Guangzhou China University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China

ISBN: (纸本)9781728180328

The digital low-dropout (D-LDO) regulator can work effectively in low supply voltage. It is appropriate for the digital circuits due to great process scalability. However, D-LDOs suffer a poor transient response caused by the limited sampling clock and the logic delays. Therefore, the transient performance needs to be improved. One of the solutions is getting rid of the control scheme related to synchronous clock. This paper presents an enhanced analog assisted (E-AA) technique for D-LDOs to reduce the voltage spikes. The proposed technique adds a current buffer (CB) and a switch compensated resistor (SCR) into the conventional passive analog assisted loop. The CB is used to amplify the loop gain. The SCR is used to prevent a second droop of output voltage during recovery. The simulation results show that a maximum voltage undershoot is 16.4 mV with a 5 mA/3.8 ns load step and a total capacitor is only 52 pF. Thus, the resulting figure-of-merit (FoM) is 0.41 ps. © 2020 IEEE.

关键词： Power management

来源：评论

学校读者我要写书评

暂无评论

A Low-Power Blocker-Tolerant Receiver with Wideband Negative-Feedback Technique Achieving 22.4dBm OOB-IIP3

A Low-Power Blocker-Tolerant Receiver with Wideband Negative...

引用

International Conference on Integrated Circuits and Microsystems (ICICM)

作者： Chenxiang Cai Gengzhen Qi Pui-In Mak School of Microelectronics Science and Technology Sun Yat-sen University Zhuhai China State-Key Lab of Analog and Mixed-Signal VLSI/IME University of Macau Macao China

ISBN: (纸本)9781665460583

This paper proposes a low-power four-phase wideband negative-feedback (WNF) receiver which is tunable to operate at 0.1 to 2GHz. A gain-boosted N-path low-noise amplifier (LNA) is employed to achieve both low noise Figure (NF) and high linearity. Besides, an extra up-conversion path is introduced from baseband (BB) output to radio frequency (RF) input to create a negative-feedback loop that optimizes the input-impedance matching. The Miller theory has been extended to passive-mixer switches to realize a smaller input parasitic capacitance. Implemented in 65nm CMOS process, the simulation results show that the receiver achieves 22.4dBm OOB-IIP3 at 80MHz offset frequency and 16.4MHz channel BW at 2GHz. When covering 0.1 to 2GHz, the NF ranges from 2.S to 5dB and gain varies from 31.8 to 35.7dB, while only paying 7 to 31mW power consumption.

关键词： Band-pass filters Resistors Radio frequency Noise figure Baseband Linearity Receivers

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：