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Substrate bias effects in p-channel GaN-on-Si transistors

Science China(Information Sciences) 2025年第1期68卷 404-405页

作者： Mengyao ZHAO Jie MA Lanlan YANG Chuanqi PAN Denggui WANG Jianjun ZHOU Sheng LI Jiaxing WEI Long ZHANG Siyang LIU Weifeng SUN National ASIC System Engineering Research Center School of Integrated Circuits Southeast University National Center of Technology Innovation for Electronic Design Automation Southeast University National Key Laboratory of Solid-State Microwave Devices and Circuits

The drain current （ID） of the n-channel GaN field-effecttransistor （n-FET） is influenced by the substrate-to-source bias voltage (VBS)（substrate bias effect）[1].Actually,nonzero VBSis also likely to occur in p-FET in real application,because the source electrode of p-FET is usually connected to high *** study reports the dependency between IDand VBSin p-FET for the first time,and analyzes the underlying mechanisms from the perspective of vertical electric field （EF） distribution.

关键词： bias effects p-channel substrate transistors

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Access Your Tesla without Your Awareness: Compromising keyless Entry system of Model 3 30

Access Your Tesla without Your Awareness: Compromising Keyle...

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30th Annual Network and Distributed system Security Symposium, NDSS 2023

作者： Xie, Xinyi Jiang, Kun Dai, Rui Lu, Jun Wang, Lihui Li, Qing Yu, Jun Shanghai Fudan Microelectronics Group Co. Ltd China State Key Laboratory of ASIC & System Fudan University China

ISBN: (纸本)1891562835

Tesla Model 3 has equipped with Phone keys and key Cards in addition to traditional key fobs for better driving experiences. These new features allow a driver to enter and start the vehicle without using a mechanical key through a wireless authentication process between the vehicle and the key. Unlike the requirements of swiping against the car for key Cards, the Tesla mobile app’s Phone key feature can unlock a Model 3 while your smartphone is still in a pocket or bag. In this paper, we performed a detailed security analysis aiming at Tesla keys, especially for key Cards and Phone keys. Starting with reverse engineering the mobile application and sniffing the communication data, we reestablished pairing and authentication protocols and analyzed their potential issues. Missing the certificate verification allows an unofficial key Card to work as an official one. Using these third-party products may lead to serious security problems. Also, the weaknesses of the current protocol lead to a man-in-the-middle (MitM) attack through a Bluetooth channel. The MitM attack is an improved relay attack breaking the security of the authentication procedures for Phone keys. We also developed an App named TESmLA installed on customized Android devices to complete the proof-of-concept. The attackers can break into Tesla Model 3 and drive it away without the awareness of the car owner. Our results bring into question the security of Passive keyless Entry and Start (PKES) and Bluetooth implementations in security-critical applications. To mitigate the security problems, we discussed the corresponding countermeasures and feasible secure scheme in the future. © 2023 30th Annual Network and Distributed system Security Symposium, NDSS 2023. All Rights Reserved.

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Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors

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Journal of Materials Science & Technology 2022年第11期106卷 243-248页

作者： Jingyi Ma Xinyu Chen Yaochen Sheng Ling Tong Xiaojiao Guo Minxing Zhang Chen Luo Lingyi Zong Yin Xia Chuming Sheng Yin Wang Saifei Gou Xinyu Wang Xing Wu Peng Zhou David Wei Zhang Chenjian Wu Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai200433China In Situ Devices Center Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241China School of Electronic Information Soochow UniversitySuzhou215006China

The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic ***,incompatible electrical properties and inappropriate logic levels remain enormous *** this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) *** instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric *** this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 *** work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film.

关键词： Two-dimensional semiconductor MoS_(2) Top gate Field effect transistor Logic inverter

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Fully sprayed MXene-based high-performance flexible piezoresistive sensor for image recognition

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Nano Materials Science 2024年第1期6卷 77-85页

作者： Zhi-Dong Zhang Xue-Feng Zhao Qing-Chao Zhang Jie Liang Hui-Nan Zhang Tian-Sheng Zhang Chen-Yang Xue Key Laboratory of Instrumentation Science&Dynamic Measurement of Ministry of Education North University of ChinaTaiyuan030051People's Republic of China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai200433People's Republic of China Shanxi Hosipital of Acupuncture and Moxibustion Taiyuan030006People's Republic of China

High-performance flexible pressure sensors provide comprehensive tactile perception and are applied in human activity monitoring,soft robotics,medical treatment,and human-computer ***,these flexible pressure sensors require extensive nano-architectural design and complicated manufacturing and are ***,a highly sensitive,flexible piezoresistive tactile sensor is designed and fabricated,consisting of three main parts:the randomly distributed microstructure on T-ZnOw/PDMS film as a top substrate,multilayer Ti_(3)C_(2)-MXene film as an intermediate conductive filler,and the few-layer Ti_(3)C_(2)-MXene nanosheetbased interdigital electrodes as the bottom *** MXene-based piezoresistive sensor with randomly distributed microstructure exhibits a high sensitivity over a broad pressure range(less than 10 kPa for 175 kPa^(-1))and possesses an out-standing permanence of up to 5000 ***,a 16-pixel sensor array is designed,and its potential applications in visualizing pressure distribution and an example of tactile feedback are *** fully sprayed MXene-based pressure sensor,with high sensitivity and excellent durability,can be widely used in,electronic skin,intelligent robots,and many other emerging technologies.

关键词： Piezoresistive sensor Ti_(3)C_(2)-MXene T-ZnOw/PDMS film Randomly distributed microstructure

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Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

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Journal of Materials Science & Technology 2023年第2期133卷 230-237页

作者： Ling Tong Xiaojiao Guo Zhangfeng Shen Lihui Zhou Jingyi Ma Xinyu Chen Honglei Chen Yin Xia Chuming Sheng Saifei Gou Die Wang Xinyu Wang Xiangqi Dong Yuxuan Zhu Xinzhi Zhang David Wei Zhang Sheng Dai Xi Li Peng Zhou Yangang Wang Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China College of Biological Chemical Science and EngineeringJiaxing UniversityJiaxing 314001China Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center Institute of Fine ChemicalsSchool of Chemistry&Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China State Key Laboratory of Surface Physics and Department of Physics Fudan UniversityShanghai 200433China

Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic ***,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains *** this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top *** in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted *** thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact *** temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling ***,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport *** work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.

关键词： Edge contact 2D materials Field-effect transistors Schottky barrier Contact resistance

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Advances in Noble Metal-Decorated Metal Oxide Nanomaterials for Chemiresistive Gas Sensors:Overview

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Nano-Micro Letters 2023年第6期15卷 353-427页

作者： Li‑Yuan Zhu Lang‑Xi Ou Li‑Wen Mao Xue‑Yan Wu Yi‑Ping Liu Hong‑Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics and SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China School of Opto‑Electronic Information and Computer Engineering University of Shanghai for Science and TechnologyShanghai 200093People’s Republic of China State Key Laboratory of Metal Matrix Composites School of Material Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240People’s Republic of China

Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness *** various chemiresistive sensing materials,noble metal-decorated semiconducting metal oxides(SMOs)have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble *** review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures(e.g.,nanoparticles,nanowires,nanorods,nanosheets,nanoflowers,and microspheres)for high-performance gas sensors with higher response,faster response/recovery speed,lower operating temperature,and ultra-low detection *** key topics include Pt,Pd,Au,other noble metals(e.g.,Ag,Ru,and Rh.),and bimetals-decorated SMOs containing ZnO,SnO_(2),WO_(3),other SMOs(e.g.,In_(2)O_(3),Fe_(2)O_(3),and CuO),and heterostructured *** addition to conventional devices,the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also ***,the relevant mechanisms for the sensing performance improvement caused by noble metal decoration,including the electronic sensitization effect and the chemical sensitization effect,have also been summarized in ***,major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed.

关键词： Noble metal Bimetal Semiconducting metal oxide Chemiresistive gas sensor Electronic sensitization Chemical sensitization

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Feature-Based Hand Gesture Recognition Using Two-Antenna Doppler Radar system 9

Feature-Based Hand Gesture Recognition Using Two-Antenna Dop...

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9th IEEE MTT-S International Wireless Symposium, IWS 2022

作者： Wang, Pengcheng Liang, Tingxuan Xu, Hongtao Fudan University State Key Laboratory of Asic & System Department of Microelectronics Shanghai China

ISBN: (数字)9781665481977

ISBN: (纸本)9781665481977

In this paper, we studied the hand gesture recognition algorithm based on features extraction under the single-frequency continuous wave and two-receiving antenna structure in mm wave radar. Through the radar parameters design and signal processing, the time-frequency spectrum can be generated by single frequency continuous wave and the phase distribution spectrum can be generated by the two-receiving antenna structure. 12 artificial design features are extracted from the time-frequency spectrum and phase distribution spectrum after OS-CFAR de-noising method. The support vector machine (SVM) is used to recognize the seven defined gestures from extracted features, and the recognition rate can reach 93.84%. © 2022 IEEE.

关键词： Support vector machines

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2T1C DRAM based on semiconducting MoS_(2) and semimetallic graphene for in-memory computing

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National Science Open 2023年第4期2卷 65-75页

作者： Saifei Gou Yin Wang Xiangqi Dong Zihan Xu Xinyu Wang Qicheng Sun Yufeng Xie Peng Zhou Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityZhangjiang Fudan International Innovation CenterShanghai 200433China Shenzhen Six Carbon Technology Shenzhen 518055China

In-memory computing is an alternative method to effectively accelerate the massive data-computing tasks of artificial intelligence(AI)and break the memory *** this work,we propose a 2T1C DRAM structure for in-memory *** integrates a monolayer graphene transistor,a monolayer MoS_(2)transistor,and a capacitor in a two-transistor-onecapacitor(2T1C)*** this structure,the storage node is in a similar position to that of one-transistor-one-capacitor(1T1C)dynamic random-access memory(DRAM),while an additional graphene transistor is used to accomplish the nondestructive readout of the stored ***,the ultralow leakage current of the MoS_(2)transistor enables the storage of multi-level voltages on the capacitor with a long retention *** stored charges can effectually tune the channel conductance of the graphene transistor due to its excellent linearity so that linear analog multiplication can be *** of the almost unlimited cycling endurance of DRAM,our 2T1C DRAM has great potential for in situ training and recognition,which can significantly improve the recognition accuracy of neural networks.

关键词： molybdenum disulfide(MoS_(2)) graphene DRAM in-memory computing

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Impact Analysis of Negative Gate Voltage on SiCMOS Reliability Under OFF-state Avalanche Stress

Impact Analysis of Negative Gate Voltage on SiCMOS Reliabili...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Hang Xu Jianbin Guo Tianyang Feng Yafen Yang Qing-Qing Sun David Wei Zhang State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

ISBN: (数字)9798350360608

ISBN: (纸本)9798350360615

This paper fully researches and analyzes the effect of negative OFF-state gate-source bias voltage (V GS , off) on the device degradation under OFF-state avalanche stress. It is found that the degradation associated with negative V GS ,off is much greater than that of 0V V GS ,off and negative bias temperature instability (NBTI). While the shift in threshold voltage (V T ) and on-resistance (R on ) are relatively small, and the biggest change is reverse leakage current (I Dss ) corresponds to the generation of interface state. This phenomenon is analyzed in conjunction with Technology Computer Aided Design (TCAD) analysis, which demonstrate that under the avalanche stress condition, the electric field at the bottom of the gate oxide attains substantial magnitudes. Moreover, the introduction of negative V GS ,off significantly amplifies the electric field in this region, which has a significant impact on the long-term reliability of the device.

关键词： Degradation Negative bias temperature instability Manufacturing processes Thermal variables control Logic gates Reliability engineering Threshold voltage

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Exhaustive Application-Dependent Testing for FPGA Interconnect Resources

Exhaustive Application-Dependent Testing for FPGA Interconne...

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International Conference on Solid-state and Integrated Circuit Technology

作者： Wenwei Chen Xinyu He Tongshu Ding Jian Wang Jinmei Lai State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Up to now, in the field of application-dependent testing for FPGA interconnect resources, the most widely used method is single-term function method, and the most accurate fault model is asymmetric bridging fault model. In this paper, a new fault model called Boolean bridging fault model is proposed, which is a superset of asymmetric bridging fault model. Based on single-term function method, we minimize the number of test configurations to the greatest extent possible, and theorems in set theory ensure that the result is optimal for both asymmetric bridging fault model and Boolean bridging fault model. Moreover, for special cases called feedback bridging faults, the study demonstrates that repeated sampling is a simple method that can achieve high coverage.

关键词： Integrated circuit technology Accuracy Integrated circuit interconnections Set theory Circuit faults Integrated circuit modeling Field programmable gate arrays Testing

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